JP5164833B2 - 印刷可能な半導体構造の製造方法 - Google Patents
印刷可能な半導体構造の製造方法 Download PDFInfo
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- JP5164833B2 JP5164833B2 JP2008514820A JP2008514820A JP5164833B2 JP 5164833 B2 JP5164833 B2 JP 5164833B2 JP 2008514820 A JP2008514820 A JP 2008514820A JP 2008514820 A JP2008514820 A JP 2008514820A JP 5164833 B2 JP5164833 B2 JP 5164833B2
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- printable semiconductor
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- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- H01L21/02656—Special treatments
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- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
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- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
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- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
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- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
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- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/145,574 | 2005-06-02 | ||
| US11/145,542 US7557367B2 (en) | 2004-06-04 | 2005-06-02 | Stretchable semiconductor elements and stretchable electrical circuits |
| PCT/US2005/019354 WO2005122285A2 (en) | 2004-06-04 | 2005-06-02 | Methods and devices for fabricating and assembling printable semiconductor elements |
| US11/145,574 US7622367B1 (en) | 2004-06-04 | 2005-06-02 | Methods and devices for fabricating and assembling printable semiconductor elements |
| US11/145,542 | 2005-06-02 | ||
| USPCT/US2005/019354 | 2005-06-02 | ||
| PCT/US2006/021161 WO2006130721A2 (en) | 2005-06-02 | 2006-06-01 | Printable semiconductor structures and related methods of making and assembling |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012246602A Division JP5734261B2 (ja) | 2005-06-02 | 2012-11-08 | 印刷可能な半導体構造、並びに関連する製造方法及び組立方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009508322A JP2009508322A (ja) | 2009-02-26 |
| JP2009508322A5 JP2009508322A5 (enExample) | 2012-05-10 |
| JP5164833B2 true JP5164833B2 (ja) | 2013-03-21 |
Family
ID=37787994
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008514820A Active JP5164833B2 (ja) | 2005-06-02 | 2006-06-01 | 印刷可能な半導体構造の製造方法 |
| JP2006154975A Active JP5297581B2 (ja) | 2005-06-02 | 2006-06-02 | エラストマースタンプへの接着の動的コントロールによるパターン転送印刷 |
| JP2012246602A Active JP5734261B2 (ja) | 2005-06-02 | 2012-11-08 | 印刷可能な半導体構造、並びに関連する製造方法及び組立方法 |
| JP2013095896A Active JP5701331B2 (ja) | 2005-06-02 | 2013-04-30 | エラストマースタンプへの接着の動的コントロールによるパターン転送印刷 |
| JP2014177486A Active JP6002725B2 (ja) | 2005-06-02 | 2014-09-01 | 印刷可能な半導体構造、並びに関連する製造方法及び組立方法 |
Family Applications After (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006154975A Active JP5297581B2 (ja) | 2005-06-02 | 2006-06-02 | エラストマースタンプへの接着の動的コントロールによるパターン転送印刷 |
| JP2012246602A Active JP5734261B2 (ja) | 2005-06-02 | 2012-11-08 | 印刷可能な半導体構造、並びに関連する製造方法及び組立方法 |
| JP2013095896A Active JP5701331B2 (ja) | 2005-06-02 | 2013-04-30 | エラストマースタンプへの接着の動的コントロールによるパターン転送印刷 |
| JP2014177486A Active JP6002725B2 (ja) | 2005-06-02 | 2014-09-01 | 印刷可能な半導体構造、並びに関連する製造方法及び組立方法 |
Country Status (3)
| Country | Link |
|---|---|
| EP (2) | EP4040474A1 (enExample) |
| JP (5) | JP5164833B2 (enExample) |
| KR (2) | KR101269566B1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016521457A (ja) * | 2013-04-18 | 2016-07-21 | フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | 改善された導電率を有する高周波数導電体 |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2925221B1 (fr) * | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | Procede de transfert d'une couche mince |
| KR101755207B1 (ko) * | 2008-03-05 | 2017-07-19 | 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 | 펴고 접을 수 있는 전자장치 |
| KR101004849B1 (ko) * | 2008-09-02 | 2010-12-28 | 삼성전기주식회사 | 박막소자 제조방법 |
| KR101077789B1 (ko) | 2009-08-07 | 2011-10-28 | 한국과학기술원 | Led 디스플레이 제조 방법 및 이에 의하여 제조된 led 디스플레이 |
| KR101113692B1 (ko) | 2009-09-17 | 2012-02-27 | 한국과학기술원 | 태양전지 제조방법 및 이에 의하여 제조된 태양전지 |
| KR101221871B1 (ko) | 2009-12-07 | 2013-01-15 | 한국전자통신연구원 | 반도체 소자의 제조방법 |
| WO2012097163A1 (en) * | 2011-01-14 | 2012-07-19 | The Board Of Trustees Of The University Of Illinois | Optical component array having adjustable curvature |
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| JP2016521457A (ja) * | 2013-04-18 | 2016-07-21 | フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | 改善された導電率を有する高周波数導電体 |
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| KR20080015921A (ko) | 2008-02-20 |
| EP2937896B1 (en) | 2022-05-04 |
| JP6002725B2 (ja) | 2016-10-05 |
| JP5701331B2 (ja) | 2015-04-15 |
| EP2937896A1 (en) | 2015-10-28 |
| JP5297581B2 (ja) | 2013-09-25 |
| KR101269566B1 (ko) | 2013-06-07 |
| JP2007027693A (ja) | 2007-02-01 |
| JP2015019095A (ja) | 2015-01-29 |
| JP5734261B2 (ja) | 2015-06-17 |
| JP2009508322A (ja) | 2009-02-26 |
| KR101308548B1 (ko) | 2013-09-23 |
| JP2013183163A (ja) | 2013-09-12 |
| EP4040474A1 (en) | 2022-08-10 |
| KR20130006712A (ko) | 2013-01-17 |
| JP2013080934A (ja) | 2013-05-02 |
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