JP5161819B2 - 基板処理方法および基板処理装置 - Google Patents

基板処理方法および基板処理装置 Download PDF

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Publication number
JP5161819B2
JP5161819B2 JP2009067919A JP2009067919A JP5161819B2 JP 5161819 B2 JP5161819 B2 JP 5161819B2 JP 2009067919 A JP2009067919 A JP 2009067919A JP 2009067919 A JP2009067919 A JP 2009067919A JP 5161819 B2 JP5161819 B2 JP 5161819B2
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Japan
Prior art keywords
substrate
temperature
gas
processing
mounting table
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Expired - Fee Related
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JP2009067919A
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English (en)
Japanese (ja)
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JP2010225614A5 (enExample
JP2010225614A (ja
Inventor
秀典 三好
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2009067919A priority Critical patent/JP5161819B2/ja
Priority to KR1020117023900A priority patent/KR101296960B1/ko
Priority to CN2010800128077A priority patent/CN102356453A/zh
Priority to PCT/JP2010/051597 priority patent/WO2010106843A1/ja
Publication of JP2010225614A publication Critical patent/JP2010225614A/ja
Priority to US13/235,955 priority patent/US20120006782A1/en
Publication of JP2010225614A5 publication Critical patent/JP2010225614A5/ja
Application granted granted Critical
Publication of JP5161819B2 publication Critical patent/JP5161819B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76883—Post-treatment or after-treatment of the conductive material

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2009067919A 2009-03-19 2009-03-19 基板処理方法および基板処理装置 Expired - Fee Related JP5161819B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009067919A JP5161819B2 (ja) 2009-03-19 2009-03-19 基板処理方法および基板処理装置
KR1020117023900A KR101296960B1 (ko) 2009-03-19 2010-02-04 기판 처리 방법 및 기판 처리 장치
CN2010800128077A CN102356453A (zh) 2009-03-19 2010-02-04 基板处理方法和基板处理装置
PCT/JP2010/051597 WO2010106843A1 (ja) 2009-03-19 2010-02-04 基板処理方法および基板処理装置
US13/235,955 US20120006782A1 (en) 2009-03-19 2011-09-19 Substrate processing method and substrate processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009067919A JP5161819B2 (ja) 2009-03-19 2009-03-19 基板処理方法および基板処理装置

Publications (3)

Publication Number Publication Date
JP2010225614A JP2010225614A (ja) 2010-10-07
JP2010225614A5 JP2010225614A5 (enExample) 2012-01-26
JP5161819B2 true JP5161819B2 (ja) 2013-03-13

Family

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Family Applications (1)

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JP2009067919A Expired - Fee Related JP5161819B2 (ja) 2009-03-19 2009-03-19 基板処理方法および基板処理装置

Country Status (5)

Country Link
US (1) US20120006782A1 (enExample)
JP (1) JP5161819B2 (enExample)
KR (1) KR101296960B1 (enExample)
CN (1) CN102356453A (enExample)
WO (1) WO2010106843A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5395708B2 (ja) * 2010-03-09 2014-01-22 東京エレクトロン株式会社 基板の配線方法及び半導体製造装置
CN105027232B (zh) * 2013-03-01 2018-01-12 户田工业株式会社 导电性涂膜的制造方法及导电性涂膜
JP5800969B1 (ja) * 2014-08-27 2015-10-28 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム、記録媒体
EP3061845B1 (en) * 2015-02-03 2018-12-12 LG Electronics Inc. Metal organic chemical vapor deposition apparatus for solar cell
CN111607801A (zh) * 2019-02-22 2020-09-01 中科院微电子研究所昆山分所 一种铜表面氧化物的处理方法
JP7341043B2 (ja) * 2019-12-06 2023-09-08 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN111088501B (zh) * 2019-12-16 2021-06-22 浙江大学 一种元素分析仪还原管的回收和再利用方法
JP7030858B2 (ja) * 2020-01-06 2022-03-07 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57170534A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Dry etching method for aluminum and aluminum alloy
JPS63203772A (ja) * 1987-02-20 1988-08-23 Hitachi Ltd 銅薄膜の気相成長方法
US6899816B2 (en) * 2002-04-03 2005-05-31 Applied Materials, Inc. Electroless deposition method
US7205228B2 (en) * 2003-06-03 2007-04-17 Applied Materials, Inc. Selective metal encapsulation schemes
JP4590402B2 (ja) * 2004-04-30 2010-12-01 株式会社荏原製作所 基板の処理装置
US20080047583A1 (en) * 2005-01-06 2008-02-28 Akira Fukunaga Substrate Processing Method and Apparatus
JP2006216937A (ja) * 2005-01-06 2006-08-17 Ebara Corp 基板処理方法及び装置
US20070054047A1 (en) * 2005-09-06 2007-03-08 Tokyo Electron Limited Method of forming a tantalum-containing layer from a metalorganic precursor
WO2008001697A1 (fr) * 2006-06-26 2008-01-03 Tokyo Electron Limited Procédé et appareil de traitement de substrats
JP5006134B2 (ja) * 2007-08-09 2012-08-22 東京エレクトロン株式会社 ドライクリーニング方法
JP2009043974A (ja) * 2007-08-09 2009-02-26 Tokyo Electron Ltd 半導体装置の製造方法、半導体基板の処理装置及び記憶媒体

Also Published As

Publication number Publication date
US20120006782A1 (en) 2012-01-12
KR20110127268A (ko) 2011-11-24
KR101296960B1 (ko) 2013-08-14
CN102356453A (zh) 2012-02-15
WO2010106843A1 (ja) 2010-09-23
JP2010225614A (ja) 2010-10-07

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