JP5160896B2 - ボッシュプロセスに用いる乾式エッチング装置、乾式エッチング終了点検出装置及びその電気素子の形成方法 - Google Patents

ボッシュプロセスに用いる乾式エッチング装置、乾式エッチング終了点検出装置及びその電気素子の形成方法 Download PDF

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Publication number
JP5160896B2
JP5160896B2 JP2007542902A JP2007542902A JP5160896B2 JP 5160896 B2 JP5160896 B2 JP 5160896B2 JP 2007542902 A JP2007542902 A JP 2007542902A JP 2007542902 A JP2007542902 A JP 2007542902A JP 5160896 B2 JP5160896 B2 JP 5160896B2
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light
optical
dry etching
plasma
etching
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Expired - Fee Related
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JP2007542902A
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Japanese (ja)
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JP2008521241A5 (ko
JP2008521241A (ja
Inventor
スーン−ジョン・イ
ボン−ジュ・ウ
ドン−ソク・イ
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セミシスコ・カンパニー・リミテッド
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Priority claimed from PCT/KR2005/003907 external-priority patent/WO2006054871A1/en
Publication of JP2008521241A publication Critical patent/JP2008521241A/ja
Publication of JP2008521241A5 publication Critical patent/JP2008521241A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP2007542902A 2004-11-18 2005-11-17 ボッシュプロセスに用いる乾式エッチング装置、乾式エッチング終了点検出装置及びその電気素子の形成方法 Expired - Fee Related JP5160896B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR20040094687 2004-11-18
KR10-2004-0094687 2004-11-18
KR1020050108791A KR100727632B1 (ko) 2004-11-18 2005-11-14 보쉬 공정에 이용되는 건식 식각 장치들, 건식 식각 종료점검출장치들 및 그들을 이용해서 전기소자를 형성하는방법들
KR10-2005-0108791 2005-11-14
PCT/KR2005/003907 WO2006054871A1 (en) 2004-11-18 2005-11-17 Dry etching apparatuses and methods of forming an electric device using the same

Publications (3)

Publication Number Publication Date
JP2008521241A JP2008521241A (ja) 2008-06-19
JP2008521241A5 JP2008521241A5 (ko) 2012-10-04
JP5160896B2 true JP5160896B2 (ja) 2013-03-13

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JP2007542902A Expired - Fee Related JP5160896B2 (ja) 2004-11-18 2005-11-17 ボッシュプロセスに用いる乾式エッチング装置、乾式エッチング終了点検出装置及びその電気素子の形成方法

Country Status (2)

Country Link
JP (1) JP5160896B2 (ko)
KR (1) KR100727632B1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008205436A (ja) * 2007-01-26 2008-09-04 Toshiba Corp 微細構造体の製造方法
KR101868596B1 (ko) 2016-10-10 2018-06-19 (주)아인스 비아 홀 형성 방법 및 이를 포함하는 비아 콘택 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128719A (ja) * 1986-11-19 1988-06-01 Nec Corp 終点検出装置
JP2611001B2 (ja) * 1989-07-17 1997-05-21 株式会社日立製作所 終点判定方法および装置
JP2936501B2 (ja) * 1992-01-29 1999-08-23 東京エレクトロン株式会社 プラズマ処理装置及びこのクリーニング方法
JPH04333230A (ja) * 1991-05-08 1992-11-20 Kokusai Electric Co Ltd プラズマエッチング装置に於けるエッチング終点検出装置
JP3433891B2 (ja) * 1997-07-09 2003-08-04 日鐵住金溶接工業株式会社 Ｐ添加薄板鋼用ガスシールドアーク溶接ワイヤおよびｍａｇ溶接方法
DE19730644C1 (de) * 1997-07-17 1998-11-19 Bosch Gmbh Robert Verfahren zum Erkennen des Übergangs unterschiedlicher Materialien in Halbleiterstrukturen bei einer anisotropen Tiefenätzung
JP3563949B2 (ja) * 1997-12-19 2004-09-08 東京エレクトロン株式会社 プラズマ処理方法
WO2002077589A2 (en) * 2001-03-23 2002-10-03 Tokyo Electron Limited Method and apparatus for endpoint detection using partial least squares

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Publication number Publication date
KR100727632B1 (ko) 2007-06-13
JP2008521241A (ja) 2008-06-19
KR20060055352A (ko) 2006-05-23

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