JP5157026B2 - 半導体膜の製造方法、半導体装置の製造方法、電子機器の製造方法、半導体膜、半導体装置および電子機器 - Google Patents

半導体膜の製造方法、半導体装置の製造方法、電子機器の製造方法、半導体膜、半導体装置および電子機器 Download PDF

Info

Publication number
JP5157026B2
JP5157026B2 JP2008025632A JP2008025632A JP5157026B2 JP 5157026 B2 JP5157026 B2 JP 5157026B2 JP 2008025632 A JP2008025632 A JP 2008025632A JP 2008025632 A JP2008025632 A JP 2008025632A JP 5157026 B2 JP5157026 B2 JP 5157026B2
Authority
JP
Japan
Prior art keywords
film
silicon
manufacturing
silicon carbide
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008025632A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009188133A (ja
JP2009188133A5 (https=
Inventor
浩行 島田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2008025632A priority Critical patent/JP5157026B2/ja
Publication of JP2009188133A publication Critical patent/JP2009188133A/ja
Publication of JP2009188133A5 publication Critical patent/JP2009188133A5/ja
Application granted granted Critical
Publication of JP5157026B2 publication Critical patent/JP5157026B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3208—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
JP2008025632A 2008-02-05 2008-02-05 半導体膜の製造方法、半導体装置の製造方法、電子機器の製造方法、半導体膜、半導体装置および電子機器 Expired - Fee Related JP5157026B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008025632A JP5157026B2 (ja) 2008-02-05 2008-02-05 半導体膜の製造方法、半導体装置の製造方法、電子機器の製造方法、半導体膜、半導体装置および電子機器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008025632A JP5157026B2 (ja) 2008-02-05 2008-02-05 半導体膜の製造方法、半導体装置の製造方法、電子機器の製造方法、半導体膜、半導体装置および電子機器

Publications (3)

Publication Number Publication Date
JP2009188133A JP2009188133A (ja) 2009-08-20
JP2009188133A5 JP2009188133A5 (https=) 2011-03-24
JP5157026B2 true JP5157026B2 (ja) 2013-03-06

Family

ID=41071101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008025632A Expired - Fee Related JP5157026B2 (ja) 2008-02-05 2008-02-05 半導体膜の製造方法、半導体装置の製造方法、電子機器の製造方法、半導体膜、半導体装置および電子機器

Country Status (1)

Country Link
JP (1) JP5157026B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9257283B2 (en) * 2012-08-06 2016-02-09 General Electric Company Device having reduced bias temperature instability (BTI)
CN221708719U (zh) * 2022-03-18 2024-09-13 意法半导体股份有限公司 电子器件
US12593485B2 (en) 2022-03-18 2026-03-31 Stmicroelectronics S.R.L. Forming an electronic device, such as a JBS or MPS diode, based on 3C—SiC, and 3C—SiC electronic device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01297813A (ja) * 1988-05-25 1989-11-30 Sony Corp シリコンカーバイドの製造方法
JPH03173418A (ja) * 1989-12-01 1991-07-26 Nec Corp 表面改質方法及び表面改質装置
JP2005223215A (ja) * 2004-02-06 2005-08-18 Japan Science & Technology Agency Ｓｉ基板上への炭化珪素単結晶膜の製造方法及びそれを用いて製造される炭化珪素半導体装置

Also Published As

Publication number Publication date
JP2009188133A (ja) 2009-08-20

Similar Documents

Publication Publication Date Title
CN101814526B (zh) 半导体装置以及其制造方法
CN102422424A (zh) 半导体器件
JP6448419B2 (ja) 炭化珪素単結晶エピタキシャルウェハの製造方法
US9153661B2 (en) Semiconductor device and method for manufacturing same
JP2019140242A (ja) 炭化珪素基板および炭化珪素半導体装置
US20230369412A1 (en) Semiconductor substrate and fabrication method of the semiconductor substrate
US9905432B2 (en) Semiconductor device, method for manufacturing the same and power converter
US20110121311A1 (en) Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor device
JP2015103631A (ja) 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
CN102484044A (zh) 碳化硅衬底的制造方法、半导体器件的制造方法、碳化硅衬底和半导体器件
JP5157026B2 (ja) 半導体膜の製造方法、半導体装置の製造方法、電子機器の製造方法、半導体膜、半導体装置および電子機器
US12374545B2 (en) Process for working a wafer of 4H—SiC material to form a 3C—SiC layer in direct contact with the 4H—SiC material
JP5742712B2 (ja) 炭化珪素半導体装置の製造方法
JP6686581B2 (ja) 炭化珪素半導体素子および炭化珪素半導体素子の製造方法
JP5921089B2 (ja) エピタキシャルウエハの製造方法及び半導体装置の製造方法
JP2015192121A (ja) 半導体装置およびその製造方法
JP5041397B2 (ja) 電子デバイス用半導体基板の製造方法
CN119297073A (zh) 半导体衬底、其制造方法及制造装置
JP2023138485A (ja) ３ｃ－ｓｉｃに基づいてｊｂｓ又はｍｐｓ等の電子装置を製造する方法及び３ｃ－ｓｉｃ電子装置
CN116779659A (zh) 形成基于3C－SiC的电子器件以及3C－SiC电子器件
JP2007290924A5 (https=)
JP2000106350A (ja) オーミック電極の製造方法及び半導体素子の製造方法
JP5979625B2 (ja) 半導体基板の製造方法
CN116779451A (zh) 形成与4h-sic材料直接接触的3c-sic层的方法
JP2007027630A (ja) バイポーラ型半導体装置およびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110204

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110204

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111220

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121112

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121125

R150 Certificate of patent or registration of utility model

Ref document number: 5157026

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151221

Year of fee payment: 3

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees