JP5156192B2 - 極端紫外光源装置 - Google Patents

極端紫外光源装置 Download PDF

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Publication number
JP5156192B2
JP5156192B2 JP2006015410A JP2006015410A JP5156192B2 JP 5156192 B2 JP5156192 B2 JP 5156192B2 JP 2006015410 A JP2006015410 A JP 2006015410A JP 2006015410 A JP2006015410 A JP 2006015410A JP 5156192 B2 JP5156192 B2 JP 5156192B2
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Japan
Prior art keywords
droplet
light source
target material
chamber
droplets
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Expired - Fee Related
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JP2006015410A
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Japanese (ja)
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JP2007200615A (ja
JP2007200615A5 (enExample
Inventor
真生 中野
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Gigaphoton Inc
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Gigaphoton Inc
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Priority to JP2006015410A priority Critical patent/JP5156192B2/ja
Priority to US11/655,109 priority patent/US7608846B2/en
Publication of JP2007200615A publication Critical patent/JP2007200615A/ja
Publication of JP2007200615A5 publication Critical patent/JP2007200615A5/ja
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Publication of JP5156192B2 publication Critical patent/JP5156192B2/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0027—Arrangements for controlling the supply; Arrangements for measurements

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006015410A 2006-01-24 2006-01-24 極端紫外光源装置 Expired - Fee Related JP5156192B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006015410A JP5156192B2 (ja) 2006-01-24 2006-01-24 極端紫外光源装置
US11/655,109 US7608846B2 (en) 2006-01-24 2007-01-19 Extreme ultra violet light source device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006015410A JP5156192B2 (ja) 2006-01-24 2006-01-24 極端紫外光源装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012094542A Division JP5563012B2 (ja) 2012-04-18 2012-04-18 極端紫外光源装置

Publications (3)

Publication Number Publication Date
JP2007200615A JP2007200615A (ja) 2007-08-09
JP2007200615A5 JP2007200615A5 (enExample) 2008-12-04
JP5156192B2 true JP5156192B2 (ja) 2013-03-06

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Family Applications (1)

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JP2006015410A Expired - Fee Related JP5156192B2 (ja) 2006-01-24 2006-01-24 極端紫外光源装置

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US (1) US7608846B2 (enExample)
JP (1) JP5156192B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9699877B2 (en) 2013-11-07 2017-07-04 Gigaphoton Inc. Extreme ultraviolet light generation apparatus including target droplet joining apparatus

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US10477665B2 (en) * 2012-04-13 2019-11-12 Amastan Technologies Inc. Microwave plasma torch generating laminar flow for materials processing
JP6099241B2 (ja) * 2012-06-28 2017-03-22 ギガフォトン株式会社 ターゲット供給装置
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KR102257748B1 (ko) * 2013-04-05 2021-05-28 에이에스엠엘 네델란즈 비.브이. 소스 콜렉터 장치, 리소그래피 장치 및 방법
KR102115543B1 (ko) * 2013-04-26 2020-05-26 삼성전자주식회사 극자외선 광원 장치
WO2014203804A1 (ja) * 2013-06-20 2014-12-24 ギガフォトン株式会社 極端紫外光生成システム
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US9357625B2 (en) 2014-07-07 2016-05-31 Asml Netherlands B.V. Extreme ultraviolet light source
KR102336300B1 (ko) 2014-11-17 2021-12-07 삼성전자주식회사 극자외선 광원 장치 및 극자외선 광 발생 방법
KR102269695B1 (ko) 2015-03-19 2021-06-25 삼성전자주식회사 극자외선 광 생성 장치
JP6541785B2 (ja) * 2015-07-30 2019-07-10 ギガフォトン株式会社 極端紫外光生成装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9699877B2 (en) 2013-11-07 2017-07-04 Gigaphoton Inc. Extreme ultraviolet light generation apparatus including target droplet joining apparatus

Also Published As

Publication number Publication date
JP2007200615A (ja) 2007-08-09
US20070170377A1 (en) 2007-07-26
US7608846B2 (en) 2009-10-27

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