JP5154603B2 - 電界効果トランジスタ及びその製造方法 - Google Patents

電界効果トランジスタ及びその製造方法 Download PDF

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Publication number
JP5154603B2
JP5154603B2 JP2010107768A JP2010107768A JP5154603B2 JP 5154603 B2 JP5154603 B2 JP 5154603B2 JP 2010107768 A JP2010107768 A JP 2010107768A JP 2010107768 A JP2010107768 A JP 2010107768A JP 5154603 B2 JP5154603 B2 JP 5154603B2
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JP
Japan
Prior art keywords
effect transistor
region
field effect
gate electrode
manufacturing
Prior art date
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Expired - Fee Related
Application number
JP2010107768A
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English (en)
Japanese (ja)
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JP2011238715A5 (https=
JP2011238715A (ja
Inventor
敏彦 金田
達也 下田
毅明 宮迫
永輔 ▲徳▼光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
Original Assignee
Seiko Epson Corp
Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
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Priority to JP2010107768A priority Critical patent/JP5154603B2/ja
Application filed by Seiko Epson Corp, Japan Science and Technology Agency, National Institute of Japan Science and Technology Agency filed Critical Seiko Epson Corp
Priority to US13/696,551 priority patent/US9202895B2/en
Priority to CN201180021920.6A priority patent/CN102870245B/zh
Priority to TW100116093A priority patent/TWI514585B/zh
Priority to PCT/JP2011/060581 priority patent/WO2011138958A1/ja
Priority to KR1020127031785A priority patent/KR101442943B1/ko
Publication of JP2011238715A publication Critical patent/JP2011238715A/ja
Publication of JP2011238715A5 publication Critical patent/JP2011238715A5/ja
Application granted granted Critical
Publication of JP5154603B2 publication Critical patent/JP5154603B2/ja
Priority to US14/531,723 priority patent/US9123752B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2010107768A 2010-05-07 2010-05-07 電界効果トランジスタ及びその製造方法 Expired - Fee Related JP5154603B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2010107768A JP5154603B2 (ja) 2010-05-07 2010-05-07 電界効果トランジスタ及びその製造方法
CN201180021920.6A CN102870245B (zh) 2010-05-07 2011-05-06 功能设备的制造方法、场效应晶体管和薄膜晶体管
TW100116093A TWI514585B (zh) 2010-05-07 2011-05-06 A manufacturing method of a functional element, a thin film transistor, and a piezoelectric ink jet head
PCT/JP2011/060581 WO2011138958A1 (ja) 2010-05-07 2011-05-06 機能性デバイスの製造方法、強誘電体材料層の製造方法、電界効果トランジスタの製造方法、並びに薄膜トランジスタ、電界効果トランジスタ、及び圧電式インクジェットヘッド
US13/696,551 US9202895B2 (en) 2010-05-07 2011-05-06 Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric inkjet head
KR1020127031785A KR101442943B1 (ko) 2010-05-07 2011-05-06 기능성 디바이스의 제조방법, 강유전체 재료층의 제조방법, 전계 효과 트렌지스터의 제조방법, 및 박막 트랜지스터, 전계 효과 트렌지스터, 및 전압식 잉크젯 헤드
US14/531,723 US9123752B2 (en) 2010-05-07 2014-11-03 Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric ink jet head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010107768A JP5154603B2 (ja) 2010-05-07 2010-05-07 電界効果トランジスタ及びその製造方法

Related Child Applications (1)

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JP2012265997A Division JP5656966B2 (ja) 2012-12-05 2012-12-05 電界効果トランジスタ及びその製造方法

Publications (3)

Publication Number Publication Date
JP2011238715A JP2011238715A (ja) 2011-11-24
JP2011238715A5 JP2011238715A5 (https=) 2012-10-11
JP5154603B2 true JP5154603B2 (ja) 2013-02-27

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Family Applications (1)

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JP2010107768A Expired - Fee Related JP5154603B2 (ja) 2010-05-07 2010-05-07 電界効果トランジスタ及びその製造方法

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JP (1) JP5154603B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6470352B2 (ja) * 2012-10-18 2019-02-13 出光興産株式会社 酸化物半導体薄膜

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058837A (ja) * 1998-08-05 2000-02-25 Sanyo Electric Works Ltd 半導体素子及びその製造方法
JP4767616B2 (ja) * 2005-07-29 2011-09-07 富士フイルム株式会社 半導体デバイスの製造方法及び半導体デバイス
US7989361B2 (en) * 2006-09-30 2011-08-02 Samsung Electronics Co., Ltd. Composition for dielectric thin film, metal oxide dielectric thin film using the same and preparation method thereof
JP4388544B2 (ja) * 2006-12-19 2009-12-24 セイコーエプソン株式会社 半導体装置の製造方法、電気光学装置および電子機器
JP2009218295A (ja) * 2008-03-07 2009-09-24 Ricoh Co Ltd 薄膜トランジスタ、その製造方法、アクティブマトリクス型薄膜トランジスタアレイ及びアクティブマトリクス駆動表示装置

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JP2011238715A (ja) 2011-11-24

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