JP5147230B2 - 半導体基板の割断装置及び太陽電池モジュールの製造方法 - Google Patents
半導体基板の割断装置及び太陽電池モジュールの製造方法 Download PDFInfo
- Publication number
- JP5147230B2 JP5147230B2 JP2006348789A JP2006348789A JP5147230B2 JP 5147230 B2 JP5147230 B2 JP 5147230B2 JP 2006348789 A JP2006348789 A JP 2006348789A JP 2006348789 A JP2006348789 A JP 2006348789A JP 5147230 B2 JP5147230 B2 JP 5147230B2
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- Japan
- Prior art keywords
- semiconductor substrate
- cleaving
- solar cell
- mounting table
- blade
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 99
- 239000004065 semiconductor Substances 0.000 title claims description 93
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000003825 pressing Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000011218 segmentation Effects 0.000 description 5
- 239000000945 filler Substances 0.000 description 4
- 229920002799 BoPET Polymers 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
- B26F3/00—Severing by means other than cutting; Apparatus therefor
- B26F3/002—Precutting and tensioning or breaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T225/00—Severing by tearing or breaking
- Y10T225/30—Breaking or tearing apparatus
- Y10T225/307—Combined with preliminary weakener or with nonbreaking cutter
- Y10T225/321—Preliminary weakener
- Y10T225/325—With means to apply moment of force to weakened work
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T225/00—Severing by tearing or breaking
- Y10T225/30—Breaking or tearing apparatus
- Y10T225/371—Movable breaking tool
Description
2…半導体基板(太陽電池セル)の所定領域
3…分割溝
4…n型単結晶シリコン基板
5…i型非晶質シリコン層
5p…p型非晶質シリコン層
6…透明導電膜
7i…i型非晶質シリコン層
7n…n型非晶質シリコン層
8…透明導電膜
10…割断刃
10a…テーパー
10b…割断刃の孔
11…凸部形成部材
11a…凸部形成部材のテーパー
20…載置台
30…プレス部材
41,42,42,44…分割後の太陽電池セル
51…分割後の太陽電池セル
52…タブ
53…充填材
54…表面保護材
55…PETフィルム
56…アルミニウム箔
57…PETフィルム
Claims (6)
- 半導体基板を分割溝が形成された領域で割断するための割断装置であって、
前記半導体基板の分割溝が形成された領域の内側部分を載せるための載置台と、
前記載置台に載せた前記半導体基板の上方の位置から下方に移動することによって、前記半導体基板の分割溝が形成された領域の外側部分を押圧して前記分割溝の部分で前記半導体基板を割断するための割断刃とを備え、
前記半導体基板の分割溝が形成された領域の内側部分が180°未満の角度で隣接する一対の辺を少なくとも有しており、前記載置台に載せた前記半導体基板の上方に配置させた割断刃を下方に移動させることにより前記半導体基板を割断する際、一方の辺が他方の辺よりも先に押圧されるように前記一方の辺の外側部分を押圧して前記分割溝の部分で前記半導体基板を割断する前記割断刃の部分に凸部が設けられていることを特徴とする半導体基板の割断装置。 - 前記載置台上に載せた前記半導体基板の分割溝が形成された領域の内側部分を上方から前記載置台側に押し付けて、割断の際の前記半導体基板の位置を固定するためのプレス部材をさらに備えることを特徴とする請求項1に記載の半導体基板の割断装置。
- 前記割断刃が環状であり、その内側に前記載置台が貫通する孔が形成されていることを特徴とする請求項1または2に記載の半導体基板の割断装置。
- 前記凸部の内側端面に、下方に向かって広がるテーパーが形成されていることを特徴とする請求項1〜3のいずれか1項に記載の半導体基板の割断装置。
- 前記半導体基板が、太陽電池の素子構造を形成した半導体基板であることを特徴とする請求項1〜4のいずれか1項に記載の半導体基板の割断装置。
- 前記半導体基板が、太陽電池の素子構造を形成した半導体基板であり、
請求項2〜5のいずれか1項に記載の装置を用いて前記半導体基板を割断する工程と、
割断した複数の前記半導体基板を配列して電気的に接続することにより太陽電池モジュールを作成する工程とを備えたことを特徴とする太陽電池モジュールの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006348789A JP5147230B2 (ja) | 2006-12-26 | 2006-12-26 | 半導体基板の割断装置及び太陽電池モジュールの製造方法 |
EP20070025018 EP1939948B1 (en) | 2006-12-26 | 2007-12-21 | Method and apparatus for breaking semiconductor substrate |
US11/964,405 US8034653B2 (en) | 2006-12-26 | 2007-12-26 | Method and apparatus for breaking semiconductor substrate, method for breaking solar cell and method for fabrication of solar cell module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006348789A JP5147230B2 (ja) | 2006-12-26 | 2006-12-26 | 半導体基板の割断装置及び太陽電池モジュールの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008159959A JP2008159959A (ja) | 2008-07-10 |
JP5147230B2 true JP5147230B2 (ja) | 2013-02-20 |
Family
ID=39271311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006348789A Expired - Fee Related JP5147230B2 (ja) | 2006-12-26 | 2006-12-26 | 半導体基板の割断装置及び太陽電池モジュールの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8034653B2 (ja) |
EP (1) | EP1939948B1 (ja) |
JP (1) | JP5147230B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5059628B2 (ja) * | 2008-01-10 | 2012-10-24 | 株式会社日立製作所 | 半導体装置 |
JP2012256738A (ja) * | 2011-06-09 | 2012-12-27 | Mitsubishi Electric Corp | 光起電力装置の製造方法 |
US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
US9685579B2 (en) | 2014-12-05 | 2017-06-20 | Solarcity Corporation | Photovoltaic structure cleaving system |
WO2018166598A1 (en) * | 2017-03-16 | 2018-09-20 | Applied Materials Italia S.R.L. | Apparatus for use in the manufacture of a solar cell arrangement, system for manufacture of at least one shingled solar cell arrangement, and method for separating a solar cell into two or more solar cell pieces |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6282008A (ja) * | 1985-10-04 | 1987-04-15 | 三菱電機株式会社 | 半導体ウエハ−ブレイク装置 |
JPS62105446A (ja) * | 1985-10-31 | 1987-05-15 | Sharp Corp | 半導体装置の製造方法 |
JPS62108007A (ja) * | 1985-11-07 | 1987-05-19 | 富士電機株式会社 | 半導体板の分割方法 |
JPS6416610A (en) * | 1987-07-10 | 1989-01-20 | Nippon Mining Co | Cleaving device |
JPH01178408A (ja) * | 1988-01-07 | 1989-07-14 | Fujitsu Ltd | 印刷配線板の分割方法 |
JPH02127003A (ja) * | 1988-11-07 | 1990-05-15 | Nec Corp | ウエハー分割治具 |
JPH02179708A (ja) * | 1989-01-05 | 1990-07-12 | Kawasaki Steel Corp | 半導体ウエハの破折分離方法 |
JP3349318B2 (ja) * | 1995-11-27 | 2002-11-25 | 三洋電機株式会社 | 太陽電池モジュール |
US6962279B1 (en) * | 2000-10-18 | 2005-11-08 | Ge Medical Systems Global Technology Company, Llc | Apparatus and method for glass separation for flat panel displays |
JP2002252187A (ja) * | 2001-02-27 | 2002-09-06 | Mitsubishi Electric Corp | 半導体ウエハの切り出し装置およびこれを用いた半導体ウエハの切り出し方法 |
JP2003286044A (ja) * | 2002-03-27 | 2003-10-07 | Sharp Corp | 基板分断装置および基板分断方法 |
JP4036692B2 (ja) | 2002-06-27 | 2008-01-23 | 三洋電機株式会社 | 太陽電池モジュールの製造方法及び太陽電池セルの分離方法 |
CN1762053A (zh) * | 2003-03-13 | 2006-04-19 | Pdf全解公司 | 具有非矩形单元片的半导体晶片 |
JP3868940B2 (ja) * | 2003-09-03 | 2007-01-17 | テクダイヤ株式会社 | スクライビングツール及びそのホルダ並びに装置 |
JP4369259B2 (ja) | 2004-02-19 | 2009-11-18 | シャープ株式会社 | 太陽電池セルの製造方法 |
JP4515790B2 (ja) * | 2004-03-08 | 2010-08-04 | 株式会社東芝 | 半導体装置の製造方法及びその製造装置 |
JP4694795B2 (ja) * | 2004-05-18 | 2011-06-08 | 株式会社ディスコ | ウエーハの分割方法 |
WO2006027898A1 (ja) * | 2004-09-03 | 2006-03-16 | Shin-Etsu Chemical Co., Ltd. | 太陽光発電用モジュール及びこれを用いた太陽光発電システム |
JP5100971B2 (ja) * | 2005-03-10 | 2012-12-19 | 三菱重工業株式会社 | 太陽電池パネルの製造方法 |
-
2006
- 2006-12-26 JP JP2006348789A patent/JP5147230B2/ja not_active Expired - Fee Related
-
2007
- 2007-12-21 EP EP20070025018 patent/EP1939948B1/en not_active Not-in-force
- 2007-12-26 US US11/964,405 patent/US8034653B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1939948A3 (en) | 2010-11-17 |
US20080213979A1 (en) | 2008-09-04 |
EP1939948A2 (en) | 2008-07-02 |
US8034653B2 (en) | 2011-10-11 |
EP1939948B1 (en) | 2012-09-26 |
JP2008159959A (ja) | 2008-07-10 |
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