JP5142728B2 - 可撓性アクティブマトリックスディスプレィバックプレーンおよび方法 - Google Patents
可撓性アクティブマトリックスディスプレィバックプレーンおよび方法 Download PDFInfo
- Publication number
- JP5142728B2 JP5142728B2 JP2007555094A JP2007555094A JP5142728B2 JP 5142728 B2 JP5142728 B2 JP 5142728B2 JP 2007555094 A JP2007555094 A JP 2007555094A JP 2007555094 A JP2007555094 A JP 2007555094A JP 5142728 B2 JP5142728 B2 JP 5142728B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- forming
- contact
- substrate
- pixel electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 78
- 239000011159 matrix material Substances 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims description 60
- 230000008569 process Effects 0.000 claims description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 4
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 119
- 239000000463 material Substances 0.000 description 23
- 238000000206 photolithography Methods 0.000 description 23
- 239000003989 dielectric material Substances 0.000 description 15
- 238000002161 passivation Methods 0.000 description 14
- 239000010409 thin film Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
Description
Claims (8)
- 可撓性誘電基板(202)上にアクティブマトリックスディスプレィバックプレーン(100)を形成する方法であって、
可撓性誘電基板(202)の表面にゲート層(212)を形成するステップと、
前記ゲート層(212)の上にゲート誘電層(214)を形成するステップと、
前記ゲート誘電層(214)の少なくとも一部の上にアモルファスシリコン(a−Si)層(216)を形成するステップと、
前記a−Si層(216)の上にインター金属誘電層(218)を形成するステップと、
前記インター金属誘電層(218)の一部を選択的に除去するステップであって、それにより前記a−Si層(216)の上の少なくともソースコンタクト領域及びドレインコンタクト領域を露出させる、ステップと、
前記ソースコンタクト領域にソースコンタクト(222)を形成するステップであって、該ソースコンタクト(222)が、コンタクト向上層(236)およびバリア層(238)を有することを特徴とするステップと、
前記ドレインコンタクト領域にドレインコンタクト(224)を形成するステップと、
を有し、
前記ソースコンタクト(222)およびドレインコンタクト(224)が各々、コンタクト向上層(236)およびバリア層(238)を有し、
前記インター金属誘電層(218)を形成するステップが、
PECVDプロセスを介して約3000Åの厚さのSiN x の層を堆積するステップと、
前記SiN x 層の上にフォトレジスト層を堆積するステップと、
マスクを形成するためにフォトレジスト層をパターニングするステップと、
前記SiN x インター金属誘電層をエッチングするステップであって、それにより、その一部を選択的に除去し、前記a−Si層(216)の上のドレインコンタクト領域及びソースコンタクト領域を露出させる、ステップと、
を有することを特徴とする方法。 - ゲート層を形成する前に、前記可撓性誘電基板(202)をアニーリングするステップを更に有することを特徴とする請求項1に記載の方法。
- 前記可撓性誘電基板(202)が、ポリエチレンナフタレート(PEN)からなることを特徴とする請求項1に記載の方法。
- 前記可撓性誘電基板(202)の表面上に窒化シリコン(SiNx)誘電バリア層(208)の層を形成するステップを
更に有することを特徴とする請求項1に記載の方法。 - 前記ゲート層(212)が、ニッケルクロム(NiCr)からなり、
前記誘電層(214)が、窒化シリコン(SiNx)からなる
ことを特徴とする請求項1に記載の方法。 - 前記ソースコンタクト(222)及びドレインコンタクト(224)の上に伝導材料の層を形成するステップと、
前記伝導材料の一部を選択的に除去するステップであって、それにより、少なくともソース(226)およびドレイン(228)電極を互いに電気的に絶縁させる、ステップと
を更に有することを特徴とする請求項1に記載の方法。 - 前記ドレインコンタクト(224)に電気的に結合されたピクセル電極(114)を前記基板の表面に形成するステップを更に有することを特徴とする請求項1に記載の方法。
- 前記基板の表面に相互接続コンダクタ(242)を形成するステップと、
前記相互接続コンダクタ(242)の上にピクセル電極コンタクト(246)と相互接続コンタクト(244)を形成するステップと、
少なくとも前記ピクセル電極コンタクトの上にピクセル電極(114)を形成するステップと、
を更に有することを特徴とする請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/058,062 | 2005-02-14 | ||
US11/058,062 US7316942B2 (en) | 2005-02-14 | 2005-02-14 | Flexible active matrix display backplane and method |
PCT/US2006/000088 WO2006088564A1 (en) | 2005-02-14 | 2006-01-04 | Flexible active matrix display backplane and method |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008530797A JP2008530797A (ja) | 2008-08-07 |
JP5142728B2 true JP5142728B2 (ja) | 2013-02-13 |
Family
ID=36642661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007555094A Expired - Fee Related JP5142728B2 (ja) | 2005-02-14 | 2006-01-04 | 可撓性アクティブマトリックスディスプレィバックプレーンおよび方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7316942B2 (ja) |
EP (1) | EP1849185A1 (ja) |
JP (1) | JP5142728B2 (ja) |
KR (1) | KR101212663B1 (ja) |
CN (1) | CN101138082B (ja) |
TW (1) | TWI382259B (ja) |
WO (1) | WO2006088564A1 (ja) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003299673A1 (en) * | 2002-12-16 | 2004-07-22 | E Ink Corporation | Backplanes for electro-optic displays |
KR100663624B1 (ko) * | 2004-04-29 | 2007-01-02 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 제조방법 |
KR101058122B1 (ko) * | 2004-09-08 | 2011-08-24 | 삼성전자주식회사 | 어레이 기판과, 그의 제조 방법 및 그를 구비한 액정 패널 |
US7316942B2 (en) * | 2005-02-14 | 2008-01-08 | Honeywell International, Inc. | Flexible active matrix display backplane and method |
TWI321241B (en) * | 2005-09-14 | 2010-03-01 | Ind Tech Res Inst | Flexible pixel array substrate and method of fabricating the same |
KR100647711B1 (ko) * | 2005-11-03 | 2006-11-23 | 삼성에스디아이 주식회사 | 평판 디스플레이 장치 및 이의 제조방법 |
TWI344133B (en) * | 2006-02-24 | 2011-06-21 | Prime View Int Co Ltd | Thin film transistor array substrate and electronic ink display device |
TW200811569A (en) * | 2006-08-21 | 2008-03-01 | Prime View Int Co Ltd | E-ink display panel |
US9991311B2 (en) | 2008-12-02 | 2018-06-05 | Arizona Board Of Regents On Behalf Of Arizona State University | Dual active layer semiconductor device and method of manufacturing the same |
CN102301835B (zh) * | 2008-12-02 | 2013-11-27 | 代表亚利桑那大学的亚利桑那校董会 | 准备柔性基板组件的方法和从其得到的柔性基板组件 |
US9601530B2 (en) * | 2008-12-02 | 2017-03-21 | Arizona Board Of Regents, A Body Corporated Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Dual active layer semiconductor device and method of manufacturing the same |
US9721825B2 (en) | 2008-12-02 | 2017-08-01 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Method of providing a flexible semiconductor device and flexible semiconductor device thereof |
TWI419091B (zh) | 2009-02-10 | 2013-12-11 | Ind Tech Res Inst | 可轉移的可撓式電子裝置結構及可撓式電子裝置的製造方法 |
US8178422B2 (en) * | 2009-03-31 | 2012-05-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of measurement in semiconductor fabrication |
US8269212B2 (en) * | 2009-04-29 | 2012-09-18 | Honeywell International Inc. | OLED display with a common anode and method for forming the same |
EP2436029A4 (en) * | 2009-05-29 | 2013-04-10 | Univ Arizona | PROCESS FOR PROVIDING A FLEXIBLE SEMICONDUCTOR DEVICE AT HIGH TEMPERATURES AND FLEXIBLE SEMICONDUCTOR DEVICE THEREFOR |
US9985237B2 (en) | 2009-08-12 | 2018-05-29 | X-Fab Semiconductor Foundries Ag | Method of manufacturing an organic light emitting diode by lift-off |
KR101125567B1 (ko) * | 2009-12-24 | 2012-03-22 | 삼성모바일디스플레이주식회사 | 고분자 기판 및 그 제조 방법과 상기 고분자 기판을 포함하는 표시 장치 및 그 제조 방법 |
KR101182441B1 (ko) * | 2010-01-13 | 2012-09-12 | 삼성디스플레이 주식회사 | 유기 박막 패턴 형성 방법 및 유기 발광 디스플레이 장치의 제조 방법 |
WO2012021197A2 (en) | 2010-05-21 | 2012-02-16 | Arizona Board Of Regents, For And On Behalf Of Arizona State University | Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof |
WO2012021196A2 (en) | 2010-05-21 | 2012-02-16 | Arizona Board Of Regents, For And On Behalf Of Arizona State University | Method for manufacturing electronic devices and electronic devices thereof |
TWI464788B (zh) * | 2011-12-22 | 2014-12-11 | Ind Tech Res Inst | 感測元件陣列及其製作方法 |
US8658444B2 (en) | 2012-05-16 | 2014-02-25 | International Business Machines Corporation | Semiconductor active matrix on buried insulator |
CN103021339B (zh) * | 2012-12-31 | 2015-09-16 | 昆山工研院新型平板显示技术中心有限公司 | 像素电路、显示装置及其驱动方法 |
TWI532162B (zh) | 2013-06-25 | 2016-05-01 | 友達光電股份有限公司 | 可撓式顯示面板及其製造方法 |
CN105659310B (zh) * | 2013-08-13 | 2021-02-26 | 飞利斯有限公司 | 电子显示区域的优化 |
CN105793781B (zh) | 2013-08-27 | 2019-11-05 | 飞利斯有限公司 | 具有可挠曲电子构件的可附接装置 |
KR20150034947A (ko) * | 2013-09-27 | 2015-04-06 | 삼성디스플레이 주식회사 | 표시 장치의 금속 배선, 박막 트랜지스터 기판 및 박막 트랜지스터 기판의 제조 방법 |
TWI676880B (zh) | 2013-12-24 | 2019-11-11 | 美商飛利斯有限公司 | 動態可撓物品 |
US10381224B2 (en) | 2014-01-23 | 2019-08-13 | Arizona Board Of Regents On Behalf Of Arizona State University | Method of providing an electronic device and electronic device thereof |
WO2015156891A2 (en) | 2014-01-23 | 2015-10-15 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University | Method of providing a flexible semiconductor device and flexible semiconductor device thereof |
WO2017034644A2 (en) | 2015-06-09 | 2017-03-02 | ARIZONA BOARD OF REGENTS a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY | Method of providing an electronic device and electronic device thereof |
JP2017518638A (ja) | 2014-05-13 | 2017-07-06 | アリゾナ・ボード・オブ・リージェンツ・フォー・アンド・オン・ビハーフ・オブ・アリゾナ・ステイト・ユニバーシティArizona Board Of Regents For And On Behalf Of Arizona State University | 電子デバイスを提供する方法およびその電子デバイス |
KR102352290B1 (ko) | 2014-09-03 | 2022-01-18 | 삼성디스플레이 주식회사 | 플렉서블 표시패널 |
US9741742B2 (en) | 2014-12-22 | 2017-08-22 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Deformable electronic device and methods of providing and using deformable electronic device |
US10446582B2 (en) | 2014-12-22 | 2019-10-15 | Arizona Board Of Regents On Behalf Of Arizona State University | Method of providing an imaging system and imaging system thereof |
WO2016138356A1 (en) | 2015-02-26 | 2016-09-01 | Polyera Corporation | Attachable device having a flexible electronic component |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4479702A (en) * | 1982-07-06 | 1984-10-30 | Olin Corporation | Method and apparatus for assembling a compact multi-conductor optical fiber communication cable |
US20010022387A1 (en) * | 1991-05-02 | 2001-09-20 | Naoki Sano | Pattern forming method for semiconductor manufacturing |
JP2900229B2 (ja) * | 1994-12-27 | 1999-06-02 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法および電気光学装置 |
GB9521855D0 (en) * | 1995-10-25 | 1996-01-03 | Philips Electronics Nv | Manufacture of electronic devices comprising thin-film circuitry |
JP2776378B2 (ja) * | 1996-06-27 | 1998-07-16 | 日本電気株式会社 | 薄膜トランジスタアレイ基板およびその製造方法 |
JPH10104660A (ja) * | 1996-10-03 | 1998-04-24 | Hitachi Ltd | 液晶表示装置 |
US5994174A (en) * | 1997-09-29 | 1999-11-30 | The Regents Of The University Of California | Method of fabrication of display pixels driven by silicon thin film transistors |
US6246070B1 (en) * | 1998-08-21 | 2001-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same |
JP4094179B2 (ja) * | 1998-08-21 | 2008-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
CN100375310C (zh) * | 1999-12-21 | 2008-03-12 | 造型逻辑有限公司 | 喷墨制作的集成电路 |
JP2002208592A (ja) * | 2001-01-09 | 2002-07-26 | Sharp Corp | 絶縁膜の形成方法、半導体装置、製造装置 |
JP2004128421A (ja) * | 2002-10-07 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法 |
US7274413B1 (en) * | 2002-12-06 | 2007-09-25 | United States Of America As Represented By The Secretary Of The Navy | Flexible video display apparatus and method |
TWI290008B (en) * | 2002-12-24 | 2007-11-11 | Ritdisplay Corp | Active driven organic electroluminescent device |
JP4316896B2 (ja) * | 2003-01-09 | 2009-08-19 | 株式会社 日立ディスプレイズ | 表示装置とその製造方法 |
JP2004296963A (ja) * | 2003-03-28 | 2004-10-21 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
JP4108633B2 (ja) * | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
KR100558985B1 (ko) * | 2003-06-27 | 2006-03-10 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치용 어레이 기판의 제조 방법 |
US7527994B2 (en) * | 2004-09-01 | 2009-05-05 | Honeywell International Inc. | Amorphous silicon thin-film transistors and methods of making the same |
US7427776B2 (en) * | 2004-10-07 | 2008-09-23 | Hewlett-Packard Development Company, L.P. | Thin-film transistor and methods |
US7316942B2 (en) * | 2005-02-14 | 2008-01-08 | Honeywell International, Inc. | Flexible active matrix display backplane and method |
-
2005
- 2005-02-14 US US11/058,062 patent/US7316942B2/en active Active
-
2006
- 2006-01-04 WO PCT/US2006/000088 patent/WO2006088564A1/en active Application Filing
- 2006-01-04 CN CN200680007783XA patent/CN101138082B/zh not_active Expired - Fee Related
- 2006-01-04 JP JP2007555094A patent/JP5142728B2/ja not_active Expired - Fee Related
- 2006-01-04 EP EP06733597A patent/EP1849185A1/en not_active Withdrawn
- 2006-01-04 KR KR1020077020204A patent/KR101212663B1/ko active IP Right Grant
- 2006-01-16 TW TW095101607A patent/TWI382259B/zh not_active IP Right Cessation
-
2007
- 2007-12-14 US US11/956,797 patent/US8063856B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW200630723A (en) | 2006-09-01 |
US20080094322A1 (en) | 2008-04-24 |
KR101212663B1 (ko) | 2012-12-14 |
KR20070103050A (ko) | 2007-10-22 |
US20060180815A1 (en) | 2006-08-17 |
CN101138082A (zh) | 2008-03-05 |
JP2008530797A (ja) | 2008-08-07 |
CN101138082B (zh) | 2010-05-19 |
US8063856B2 (en) | 2011-11-22 |
US7316942B2 (en) | 2008-01-08 |
WO2006088564A1 (en) | 2006-08-24 |
TWI382259B (zh) | 2013-01-11 |
EP1849185A1 (en) | 2007-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5142728B2 (ja) | 可撓性アクティブマトリックスディスプレィバックプレーンおよび方法 | |
US20140061632A1 (en) | Thin film transistor substrate and method of manufacturing the same | |
US7755708B2 (en) | Pixel structure for flat panel display | |
US8895334B2 (en) | Thin film transistor array substrate and method for manufacturing the same and electronic device | |
US20170110587A1 (en) | Array substrate and manufacturing method thereof, display panel, display device | |
US7727789B2 (en) | Array substrate for liquid crystal display and method for fabricating the same | |
EP2709159B1 (en) | Fabricating method of thin film transistor, fabricating method of array substrate and display device | |
US9276014B2 (en) | Array substrate and method of fabricating the same, and liquid crystal display device | |
US8093595B2 (en) | Thin film array panel and manufacturing method thereof | |
CN111886697B (zh) | 显示背板及其制造方法、显示面板和显示装置 | |
US10199236B2 (en) | Thin film transistor, manufacturing method thereof, and method for manufacturing array substrate | |
WO2019210776A1 (zh) | 阵列基板、显示装置、薄膜晶体管及阵列基板的制作方法 | |
JP2019536284A (ja) | アレイ基板及びアレイ基板の製造方法 | |
US20230017854A1 (en) | Display substrate and manufacturing method, and display device | |
US9673228B2 (en) | Display panel | |
US7808569B2 (en) | Method for manufacturing pixel structure | |
CN112289811B (zh) | 一种显示基板及其制备方法、显示装置 | |
US20130087792A1 (en) | Pixel structure of reflective type electrophoretic display device and method of making the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080918 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20110909 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120213 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120301 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120601 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120711 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121010 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121101 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121120 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151130 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5142728 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |