JP5137526B2 - 形状測定装置、形状測定方法、および露光装置 - Google Patents

形状測定装置、形状測定方法、および露光装置 Download PDF

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Publication number
JP5137526B2
JP5137526B2 JP2007278962A JP2007278962A JP5137526B2 JP 5137526 B2 JP5137526 B2 JP 5137526B2 JP 2007278962 A JP2007278962 A JP 2007278962A JP 2007278962 A JP2007278962 A JP 2007278962A JP 5137526 B2 JP5137526 B2 JP 5137526B2
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JP
Japan
Prior art keywords
light
measured
measurement
wafer
shape measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007278962A
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English (en)
Japanese (ja)
Other versions
JP2008175803A5 (enExample
JP2008175803A (ja
Inventor
隆宏 松本
亮 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2007278962A priority Critical patent/JP5137526B2/ja
Priority to KR1020070117056A priority patent/KR100911697B1/ko
Priority to US11/942,348 priority patent/US7684050B2/en
Priority to TW096143948A priority patent/TWI358529B/zh
Publication of JP2008175803A publication Critical patent/JP2008175803A/ja
Publication of JP2008175803A5 publication Critical patent/JP2008175803A5/ja
Application granted granted Critical
Publication of JP5137526B2 publication Critical patent/JP5137526B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2007278962A 2006-12-22 2007-10-26 形状測定装置、形状測定方法、および露光装置 Expired - Fee Related JP5137526B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007278962A JP5137526B2 (ja) 2006-12-22 2007-10-26 形状測定装置、形状測定方法、および露光装置
KR1020070117056A KR100911697B1 (ko) 2006-12-22 2007-11-16 형상측정장치, 형상측정방법, 및 노광장치
US11/942,348 US7684050B2 (en) 2006-12-22 2007-11-19 Shape measuring apparatus, shape measuring method, and exposure apparatus
TW096143948A TWI358529B (en) 2006-12-22 2007-11-20 Shape measuring apparatus, shape measuring method,

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006346203 2006-12-22
JP2006346203 2006-12-22
JP2007278962A JP5137526B2 (ja) 2006-12-22 2007-10-26 形状測定装置、形状測定方法、および露光装置

Publications (3)

Publication Number Publication Date
JP2008175803A JP2008175803A (ja) 2008-07-31
JP2008175803A5 JP2008175803A5 (enExample) 2010-12-09
JP5137526B2 true JP5137526B2 (ja) 2013-02-06

Family

ID=39702922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007278962A Expired - Fee Related JP5137526B2 (ja) 2006-12-22 2007-10-26 形状測定装置、形状測定方法、および露光装置

Country Status (3)

Country Link
JP (1) JP5137526B2 (enExample)
KR (1) KR100911697B1 (enExample)
TW (1) TWI358529B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5454020B2 (ja) * 2009-09-03 2014-03-26 株式会社ニコン 角速度検出装置
JP5432680B2 (ja) * 2009-11-27 2014-03-05 株式会社ミツトヨ 斜入射干渉計
JP6110897B2 (ja) * 2015-06-23 2017-04-05 Ckd株式会社 三次元計測装置
US10094774B2 (en) 2015-08-12 2018-10-09 Industrial Technology Research Institute Scattering measurement system and method
CN118243015B (zh) * 2024-05-28 2024-08-20 匠岭科技(上海)有限公司 表面三维形貌的测量方法、装置、设备、介质和程序产品

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6249351B1 (en) 1999-06-03 2001-06-19 Zygo Corporation Grazing incidence interferometer and method
JP4583611B2 (ja) * 2001-01-11 2010-11-17 富士フイルム株式会社 斜入射干渉計装置
JP2002286409A (ja) * 2001-03-26 2002-10-03 Fuji Photo Optical Co Ltd 干渉計装置
US20050044963A1 (en) 2003-08-25 2005-03-03 Asml Holding N.V. High-resolution gas gauge proximity sensor
JP2007506070A (ja) * 2003-09-15 2007-03-15 ザイゴ　コーポレーション 表面形状を薄膜コーティングを通して求めるための三角測量法及びシステム

Also Published As

Publication number Publication date
TW200834038A (en) 2008-08-16
TWI358529B (en) 2012-02-21
KR100911697B1 (ko) 2009-08-10
JP2008175803A (ja) 2008-07-31
KR20080059037A (ko) 2008-06-26

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