TWI358529B - Shape measuring apparatus, shape measuring method, - Google Patents

Shape measuring apparatus, shape measuring method, Download PDF

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Publication number
TWI358529B
TWI358529B TW096143948A TW96143948A TWI358529B TW I358529 B TWI358529 B TW I358529B TW 096143948 A TW096143948 A TW 096143948A TW 96143948 A TW96143948 A TW 96143948A TW I358529 B TWI358529 B TW I358529B
Authority
TW
Taiwan
Prior art keywords
light
measurement
wafer
measuring
measurement target
Prior art date
Application number
TW096143948A
Other languages
English (en)
Chinese (zh)
Other versions
TW200834038A (en
Inventor
Takahiro Matsumoto
Ryo Sasaki
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200834038A publication Critical patent/TW200834038A/zh
Application granted granted Critical
Publication of TWI358529B publication Critical patent/TWI358529B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW096143948A 2006-12-22 2007-11-20 Shape measuring apparatus, shape measuring method, TWI358529B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006346203 2006-12-22
JP2007278962A JP5137526B2 (ja) 2006-12-22 2007-10-26 形状測定装置、形状測定方法、および露光装置

Publications (2)

Publication Number Publication Date
TW200834038A TW200834038A (en) 2008-08-16
TWI358529B true TWI358529B (en) 2012-02-21

Family

ID=39702922

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096143948A TWI358529B (en) 2006-12-22 2007-11-20 Shape measuring apparatus, shape measuring method,

Country Status (3)

Country Link
JP (1) JP5137526B2 (enExample)
KR (1) KR100911697B1 (enExample)
TW (1) TWI358529B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10094774B2 (en) 2015-08-12 2018-10-09 Industrial Technology Research Institute Scattering measurement system and method

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5454020B2 (ja) * 2009-09-03 2014-03-26 株式会社ニコン 角速度検出装置
JP5432680B2 (ja) * 2009-11-27 2014-03-05 株式会社ミツトヨ 斜入射干渉計
JP6110897B2 (ja) * 2015-06-23 2017-04-05 Ckd株式会社 三次元計測装置
CN118243015B (zh) * 2024-05-28 2024-08-20 匠岭科技(上海)有限公司 表面三维形貌的测量方法、装置、设备、介质和程序产品

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6249351B1 (en) 1999-06-03 2001-06-19 Zygo Corporation Grazing incidence interferometer and method
JP4583611B2 (ja) * 2001-01-11 2010-11-17 富士フイルム株式会社 斜入射干渉計装置
JP2002286409A (ja) * 2001-03-26 2002-10-03 Fuji Photo Optical Co Ltd 干渉計装置
US20050044963A1 (en) 2003-08-25 2005-03-03 Asml Holding N.V. High-resolution gas gauge proximity sensor
JP2007506070A (ja) * 2003-09-15 2007-03-15 ザイゴ　コーポレーション 表面形状を薄膜コーティングを通して求めるための三角測量法及びシステム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10094774B2 (en) 2015-08-12 2018-10-09 Industrial Technology Research Institute Scattering measurement system and method

Also Published As

Publication number Publication date
TW200834038A (en) 2008-08-16
JP5137526B2 (ja) 2013-02-06
KR100911697B1 (ko) 2009-08-10
JP2008175803A (ja) 2008-07-31
KR20080059037A (ko) 2008-06-26

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