KR100911697B1 - 형상측정장치, 형상측정방법, 및 노광장치 - Google Patents

형상측정장치, 형상측정방법, 및 노광장치 Download PDF

Info

Publication number
KR100911697B1
KR100911697B1 KR1020070117056A KR20070117056A KR100911697B1 KR 100911697 B1 KR100911697 B1 KR 100911697B1 KR 1020070117056 A KR1020070117056 A KR 1020070117056A KR 20070117056 A KR20070117056 A KR 20070117056A KR 100911697 B1 KR100911697 B1 KR 100911697B1
Authority
KR
South Korea
Prior art keywords
light
measurement
wafer
measured
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020070117056A
Other languages
English (en)
Korean (ko)
Other versions
KR20080059037A (ko
Inventor
타카히로 마츠모토
료 사사키
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20080059037A publication Critical patent/KR20080059037A/ko
Application granted granted Critical
Publication of KR100911697B1 publication Critical patent/KR100911697B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020070117056A 2006-12-22 2007-11-16 형상측정장치, 형상측정방법, 및 노광장치 Expired - Fee Related KR100911697B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006346203 2006-12-22
JPJP-P-2006-00346203 2006-12-22
JP2007278962A JP5137526B2 (ja) 2006-12-22 2007-10-26 形状測定装置、形状測定方法、および露光装置
JPJP-P-2007-00278962 2007-10-26

Publications (2)

Publication Number Publication Date
KR20080059037A KR20080059037A (ko) 2008-06-26
KR100911697B1 true KR100911697B1 (ko) 2009-08-10

Family

ID=39702922

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070117056A Expired - Fee Related KR100911697B1 (ko) 2006-12-22 2007-11-16 형상측정장치, 형상측정방법, 및 노광장치

Country Status (3)

Country Link
JP (1) JP5137526B2 (enExample)
KR (1) KR100911697B1 (enExample)
TW (1) TWI358529B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5454020B2 (ja) * 2009-09-03 2014-03-26 株式会社ニコン 角速度検出装置
JP5432680B2 (ja) * 2009-11-27 2014-03-05 株式会社ミツトヨ 斜入射干渉計
JP6110897B2 (ja) * 2015-06-23 2017-04-05 Ckd株式会社 三次元計測装置
US10094774B2 (en) 2015-08-12 2018-10-09 Industrial Technology Research Institute Scattering measurement system and method
CN118243015B (zh) * 2024-05-28 2024-08-20 匠岭科技(上海)有限公司 表面三维形貌的测量方法、装置、设备、介质和程序产品

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6249351B1 (en) 1999-06-03 2001-06-19 Zygo Corporation Grazing incidence interferometer and method
WO2005022082A1 (en) 2003-08-25 2005-03-10 Asml Holding N.V. High-rresoulution gas gauge proximity sensor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4583611B2 (ja) * 2001-01-11 2010-11-17 富士フイルム株式会社 斜入射干渉計装置
JP2002286409A (ja) * 2001-03-26 2002-10-03 Fuji Photo Optical Co Ltd 干渉計装置
JP2007506070A (ja) * 2003-09-15 2007-03-15 ザイゴ　コーポレーション 表面形状を薄膜コーティングを通して求めるための三角測量法及びシステム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6249351B1 (en) 1999-06-03 2001-06-19 Zygo Corporation Grazing incidence interferometer and method
WO2005022082A1 (en) 2003-08-25 2005-03-10 Asml Holding N.V. High-rresoulution gas gauge proximity sensor

Also Published As

Publication number Publication date
TW200834038A (en) 2008-08-16
TWI358529B (en) 2012-02-21
JP5137526B2 (ja) 2013-02-06
JP2008175803A (ja) 2008-07-31
KR20080059037A (ko) 2008-06-26

Similar Documents

Publication Publication Date Title
JP3631766B2 (ja) 時間を節約する高さ測定を用いた、基板にマスク・パターンを繰り返し投影する方法および装置
US6992751B2 (en) Scanning exposure apparatus
KR101032180B1 (ko) 표면 형상 계측 장치, 노광 장치, 및 디바이스 제조 방법
US6057908A (en) Exposure condition measurement method
US5510892A (en) Inclination detecting apparatus and method
US6975384B2 (en) Exposure apparatus and method
US8416423B2 (en) Interferometric apparatus for detecting 3D position of a diffracting object
US20090225327A1 (en) Position measurement apparatus, position measurement method, and exposure apparatus
US20090262323A1 (en) Measurement apparatus, exposure apparatus, and device manufacturing method
KR20090034784A (ko) 측정 장치, 노광 장치 및 디바이스 제조 방법
CN102540778A (zh) 一种测量系统及使用该测量系统的光刻设备
CN112639623B (zh) 用于测量对准标记的位置的设备和方法
US5838450A (en) Direct reticle to wafer alignment using fluorescence for integrated circuit lithography
JPH08288193A (ja) 位置合わせ方法
KR20090091670A (ko) 파면수차 측정방법, 마스크, 파면수차측정장치, 노광장치 및 디바이스의 제조방법
US7684050B2 (en) Shape measuring apparatus, shape measuring method, and exposure apparatus
KR100911697B1 (ko) 형상측정장치, 형상측정방법, 및 노광장치
JP2024095727A (ja) 光源装置、計測装置、露光装置、および計測方法
JP3581689B2 (ja) 位相測定装置
CN102402140B (zh) 一种对准系统
JP3551570B2 (ja) 走査型露光装置及び露光方法
CN1700101B (zh) 用于投影光刻机的调焦调平传感器
JP2000299276A (ja) 露光装置
JPH10172900A (ja) 露光装置
JP2550976B2 (ja) アライメント方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

FPAY Annual fee payment

Payment date: 20120719

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20130726

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20140728

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20150727

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20160725

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20170725

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20180725

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20190806

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20210805

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20210805

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000