JP5132330B2 - 不揮発性半導体記憶装置およびその製造方法 - Google Patents

不揮発性半導体記憶装置およびその製造方法 Download PDF

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Publication number
JP5132330B2
JP5132330B2 JP2008008301A JP2008008301A JP5132330B2 JP 5132330 B2 JP5132330 B2 JP 5132330B2 JP 2008008301 A JP2008008301 A JP 2008008301A JP 2008008301 A JP2008008301 A JP 2008008301A JP 5132330 B2 JP5132330 B2 JP 5132330B2
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Prior art keywords
insulating film
film
silicon nitride
high dielectric
silicon oxide
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JP2008008301A
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Japanese (ja)
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JP2009170719A (ja
JP2009170719A5 (enExample
Inventor
和展 松尾
正幸 田中
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Toshiba Corp
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Toshiba Corp
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Priority to JP2008008301A priority Critical patent/JP5132330B2/ja
Priority to US12/333,983 priority patent/US8008707B2/en
Publication of JP2009170719A publication Critical patent/JP2009170719A/ja
Publication of JP2009170719A5 publication Critical patent/JP2009170719A5/ja
Priority to US13/207,149 priority patent/US8742487B2/en
Application granted granted Critical
Publication of JP5132330B2 publication Critical patent/JP5132330B2/ja
Priority to US14/273,162 priority patent/US9142685B2/en
Priority to US14/697,121 priority patent/US9450108B2/en
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  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2008008301A 2007-12-14 2008-01-17 不揮発性半導体記憶装置およびその製造方法 Active JP5132330B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008008301A JP5132330B2 (ja) 2008-01-17 2008-01-17 不揮発性半導体記憶装置およびその製造方法
US12/333,983 US8008707B2 (en) 2007-12-14 2008-12-12 Nonvolatile semiconductor memory device provided with charge storage layer in memory cell
US13/207,149 US8742487B2 (en) 2007-12-14 2011-08-10 Nonvolatile semiconductor memory device provided with charge storage layer in memory cell
US14/273,162 US9142685B2 (en) 2007-12-14 2014-05-08 Nonvolatile semiconductor memory device provided with charge storage layer in memory cell
US14/697,121 US9450108B2 (en) 2007-12-14 2015-04-27 Nonvolatile semiconductor memory device provided with charge storage layer in memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008008301A JP5132330B2 (ja) 2008-01-17 2008-01-17 不揮発性半導体記憶装置およびその製造方法

Publications (3)

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JP2009170719A JP2009170719A (ja) 2009-07-30
JP2009170719A5 JP2009170719A5 (enExample) 2010-04-08
JP5132330B2 true JP5132330B2 (ja) 2013-01-30

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JP2008008301A Active JP5132330B2 (ja) 2007-12-14 2008-01-17 不揮発性半導体記憶装置およびその製造方法

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013197191A (ja) 2012-03-16 2013-09-30 Toshiba Corp 不揮発性半導体記憶装置
JP5865214B2 (ja) 2012-09-06 2016-02-17 株式会社東芝 半導体装置及びその製造方法
US9224874B2 (en) 2014-01-10 2015-12-29 Kabushiki Kaisha Toshiba Semiconductor storage device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4851740B2 (ja) * 2005-06-30 2012-01-11 株式会社東芝 半導体装置およびその製造方法
KR100648860B1 (ko) * 2005-09-08 2006-11-24 주식회사 하이닉스반도체 유전막 및 그 형성방법과, 상기 유전막을 구비한 반도체메모리 소자 및 그 제조방법

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