JP2009170719A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009170719A5 JP2009170719A5 JP2008008301A JP2008008301A JP2009170719A5 JP 2009170719 A5 JP2009170719 A5 JP 2009170719A5 JP 2008008301 A JP2008008301 A JP 2008008301A JP 2008008301 A JP2008008301 A JP 2008008301A JP 2009170719 A5 JP2009170719 A5 JP 2009170719A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- silicon nitride
- gate insulating
- charge storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052581 Si3N4 Inorganic materials 0.000 claims 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008008301A JP5132330B2 (ja) | 2008-01-17 | 2008-01-17 | 不揮発性半導体記憶装置およびその製造方法 |
| US12/333,983 US8008707B2 (en) | 2007-12-14 | 2008-12-12 | Nonvolatile semiconductor memory device provided with charge storage layer in memory cell |
| US13/207,149 US8742487B2 (en) | 2007-12-14 | 2011-08-10 | Nonvolatile semiconductor memory device provided with charge storage layer in memory cell |
| US14/273,162 US9142685B2 (en) | 2007-12-14 | 2014-05-08 | Nonvolatile semiconductor memory device provided with charge storage layer in memory cell |
| US14/697,121 US9450108B2 (en) | 2007-12-14 | 2015-04-27 | Nonvolatile semiconductor memory device provided with charge storage layer in memory cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008008301A JP5132330B2 (ja) | 2008-01-17 | 2008-01-17 | 不揮発性半導体記憶装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009170719A JP2009170719A (ja) | 2009-07-30 |
| JP2009170719A5 true JP2009170719A5 (enExample) | 2010-04-08 |
| JP5132330B2 JP5132330B2 (ja) | 2013-01-30 |
Family
ID=40971562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008008301A Active JP5132330B2 (ja) | 2007-12-14 | 2008-01-17 | 不揮発性半導体記憶装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5132330B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013197191A (ja) | 2012-03-16 | 2013-09-30 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP5865214B2 (ja) | 2012-09-06 | 2016-02-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US9224874B2 (en) | 2014-01-10 | 2015-12-29 | Kabushiki Kaisha Toshiba | Semiconductor storage device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4851740B2 (ja) * | 2005-06-30 | 2012-01-11 | 株式会社東芝 | 半導体装置およびその製造方法 |
| KR100648860B1 (ko) * | 2005-09-08 | 2006-11-24 | 주식회사 하이닉스반도체 | 유전막 및 그 형성방법과, 상기 유전막을 구비한 반도체메모리 소자 및 그 제조방법 |
-
2008
- 2008-01-17 JP JP2008008301A patent/JP5132330B2/ja active Active