JP5127178B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5127178B2
JP5127178B2 JP2006200298A JP2006200298A JP5127178B2 JP 5127178 B2 JP5127178 B2 JP 5127178B2 JP 2006200298 A JP2006200298 A JP 2006200298A JP 2006200298 A JP2006200298 A JP 2006200298A JP 5127178 B2 JP5127178 B2 JP 5127178B2
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Japan
Prior art keywords
substrate
opening
film
semiconductor device
insulating film
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Expired - Fee Related
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JP2006200298A
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English (en)
Japanese (ja)
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JP2007059890A (ja
JP2007059890A5 (enrdf_load_stackoverflow
Inventor
卓也 鶴目
芳隆 道前
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006200298A priority Critical patent/JP5127178B2/ja
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Publication of JP2007059890A5 publication Critical patent/JP2007059890A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2006200298A 2005-07-29 2006-07-24 半導体装置の作製方法 Expired - Fee Related JP5127178B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006200298A JP5127178B2 (ja) 2005-07-29 2006-07-24 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005222199 2005-07-29
JP2005222199 2005-07-29
JP2006200298A JP5127178B2 (ja) 2005-07-29 2006-07-24 半導体装置の作製方法

Publications (3)

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JP2007059890A JP2007059890A (ja) 2007-03-08
JP2007059890A5 JP2007059890A5 (enrdf_load_stackoverflow) 2009-08-13
JP5127178B2 true JP5127178B2 (ja) 2013-01-23

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JP2006200298A Expired - Fee Related JP5127178B2 (ja) 2005-07-29 2006-07-24 半導体装置の作製方法

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JP (1) JP5127178B2 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1976000A3 (en) * 2007-03-26 2009-05-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5416931B2 (ja) * 2007-08-24 2014-02-12 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP5581106B2 (ja) * 2009-04-27 2014-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101411800B1 (ko) 2009-12-26 2014-06-24 캐논 가부시끼가이샤 고체 촬상 장치 및 촬상 시스템
JP2017135318A (ja) * 2016-01-29 2017-08-03 株式会社ブイ・テクノロジー 配線基板の配線修正装置、配線基板の製造方法、配線基板、および表示装置
KR102378976B1 (ko) * 2016-05-18 2022-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 모듈, 및 전자 기기
KR102308784B1 (ko) * 2020-02-28 2021-10-01 한양대학교 산학협력단 텔루륨 산화물 및 이를 채널층으로 구비하는 박막트랜지스터

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152529A (ja) * 1991-11-29 1993-06-18 Oki Electric Ind Co Ltd 半導体装置
JP3778964B2 (ja) * 1995-02-15 2006-05-24 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置
JP3713418B2 (ja) * 2000-05-30 2005-11-09 光正 小柳 ３次元画像処理装置の製造方法
JP4921645B2 (ja) * 2001-03-01 2012-04-25 セイコーインスツル株式会社 ウエハレベルｃｓｐ
JP4408006B2 (ja) * 2001-06-28 2010-02-03 富士通マイクロエレクトロニクス株式会社 半導体装置およびその製造方法
JP2004349513A (ja) * 2003-05-22 2004-12-09 Seiko Epson Corp 薄膜回路装置及びその製造方法、並びに電気光学装置、電子機器
JP4285604B2 (ja) * 2003-09-19 2009-06-24 株式会社フジクラ 貫通電極付き基板、その製造方法及び電子デバイス

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JP2007059890A (ja) 2007-03-08

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