JP5124295B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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- JP5124295B2 JP5124295B2 JP2008015755A JP2008015755A JP5124295B2 JP 5124295 B2 JP5124295 B2 JP 5124295B2 JP 2008015755 A JP2008015755 A JP 2008015755A JP 2008015755 A JP2008015755 A JP 2008015755A JP 5124295 B2 JP5124295 B2 JP 5124295B2
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- 238000012545 processing Methods 0.000 title claims description 131
- 238000003672 processing method Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims description 83
- 238000005530 etching Methods 0.000 description 88
- 235000012431 wafers Nutrition 0.000 description 84
- 239000007795 chemical reaction product Substances 0.000 description 29
- 239000000758 substrate Substances 0.000 description 17
- 238000004140 cleaning Methods 0.000 description 14
- 239000003507 refrigerant Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 9
- 238000001816 cooling Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000007872 degassing Methods 0.000 description 3
- 239000004519 grease Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000003449 preventive effect Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- 238000009832 plasma treatment Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
前記ウエハの処理が終了した後で次のウエハの処理が開始されるまでの間において、前記試料台内部に配置されたヒータを用いて前記処理室内にプラズマが形成されていない状態で前記誘電体膜の上面の温度を前記ウエハの処理中の温度より高い所定の値に増加させこれを維持した状態で前記処理が終了したウエハを前記上面から持ち上げる、または前記所定の値に増加させてこれを維持した状態で前記次のウエハを前記上面に載せた後にこの上面の温度を下げて前記次のウエハの処理を開始するプラズマ処理装置。
により達成される。
102 導波管
103 処理室
104 被処理基板
105 試料載置電極
106 He供給系
107 バイアス電源
108 静電吸着電源
109 温調器
110 定電圧電源
111 制御器
201 ヘッドプレート
202 クーリングプレート
203 ヒータ
204 冷媒流路
205 温度センサ
206 シリコングリース
Claims (6)
- 真空処理容器内に配置された処理室内部に備えられその上部に配置された誘電体膜の上面に処理対象のウエハが載せられる試料台を有し、前記処理室内に生成したプラズマを用いて前記ウエハを処理するプラズマ処理装置であって、
前記ウエハの処理が終了した後で次のウエハの処理が開始されるまでの間において、前記試料台内部に配置されたヒータを用いて前記処理室内にプラズマが形成されていない状態で前記誘電体膜の上面の温度を前記ウエハの処理中の温度より高い所定の値に増加させこれを維持した状態で前記処理が終了したウエハを前記上面から持ち上げる、または前記所定の値に増加させてこれを維持した状態で前記次のウエハを前記上面に載せた後にこの上面の温度を下げて前記次のウエハの処理を開始するプラズマ処理装置。
- 請求項1に記載のプラズマ処理装置であって、前記所定の値が前記ウエハ及び次のウエハの処理の条件と独立して予め定められたプラズマ処理装置。
- 請求項1または2に記載のプラズマ処理装置であって、前記誘電体膜の内部に配置された膜状のヒータを用いてこの誘電体膜の上面の温度を前記所定の値に調節するプラズマ処理装置。
- 真空処理容器内に配置された処理室内部に備えられた試料台の上部に配置された誘電体膜の上面に処理対象の基板状のウエハを載せ前記処理室内に生成したプラズマを用いて前記ウエハを処理するプラズマ処理方法であって、
前記ウエハの処理が終了した後で次のウエハの処理が開始されるまでの間において、前記試料台内部に配置されたヒータを用いて前記処理室内にプラズマが形成されていない状態で前記誘電体膜の上面の温度を前記ウエハの処理中の温度より高い所定の値に増加させこの所定の値を維持した状態で前記処理が終了したウエハを前記上面から持ち上げる、または前記所定の値に増加させてこれを維持した状態で前記次のウエハを前記上面に載せた後にこの上面の温度を下げて前記次のウエハの処理を開始するプラズマ処理方法。
- 請求項4に記載のプラズマ処理方法であって、前記所定の値が前記ウエハ及び次のウエハの処理の条件と独立して予め定められたプラズマ処理方法。
- 請求項4または5に記載のプラズマ処理方法であって、前記誘電体膜の内部に配置された膜状のヒータを用いてこの誘電体膜の上面の温度を前記所定の値に調節するプラズマ処理方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008015755A JP5124295B2 (ja) | 2007-03-30 | 2008-01-28 | プラズマ処理装置及びプラズマ処理方法 |
TW97106829A TWI474372B (zh) | 2007-03-30 | 2008-02-27 | Plasma processing device |
KR1020080018161A KR100984309B1 (ko) | 2007-03-30 | 2008-02-28 | 플라즈마처리장치 및 플라즈마처리방법 |
US12/039,759 US20080236614A1 (en) | 2007-03-30 | 2008-02-29 | Plasma processing apparatus and plasma processing method |
KR1020090096175A KR100984313B1 (ko) | 2007-03-30 | 2009-10-09 | 플라즈마처리장치 및 플라즈마처리장치의 운전방법 |
Applications Claiming Priority (3)
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---|---|---|---|
JP2007090407 | 2007-03-30 | ||
JP2007090407 | 2007-03-30 | ||
JP2008015755A JP5124295B2 (ja) | 2007-03-30 | 2008-01-28 | プラズマ処理装置及びプラズマ処理方法 |
Related Child Applications (1)
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JP2012181985A Division JP2013008987A (ja) | 2007-03-30 | 2012-08-21 | プラズマ処理装置及びプラズマ処理方法 |
Publications (2)
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JP2008277746A JP2008277746A (ja) | 2008-11-13 |
JP5124295B2 true JP5124295B2 (ja) | 2013-01-23 |
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JP2008015755A Active JP5124295B2 (ja) | 2007-03-30 | 2008-01-28 | プラズマ処理装置及びプラズマ処理方法 |
JP2012181985A Pending JP2013008987A (ja) | 2007-03-30 | 2012-08-21 | プラズマ処理装置及びプラズマ処理方法 |
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JP2012181985A Pending JP2013008987A (ja) | 2007-03-30 | 2012-08-21 | プラズマ処理装置及びプラズマ処理方法 |
Country Status (4)
Country | Link |
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US (1) | US20080237184A1 (ja) |
JP (2) | JP5124295B2 (ja) |
KR (2) | KR100984309B1 (ja) |
TW (1) | TWI474372B (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080236614A1 (en) * | 2007-03-30 | 2008-10-02 | Hitachi High-Technologies Corporation | Plasma processing apparatus and plasma processing method |
US20090163033A1 (en) * | 2007-12-21 | 2009-06-25 | Guowen Ding | Methods for extending chamber component life time |
JP2010153508A (ja) * | 2008-12-24 | 2010-07-08 | Hitachi High-Technologies Corp | 試料のエッチング処理方法 |
JP5453024B2 (ja) * | 2009-09-02 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマエッチング処理方法 |
JP5334787B2 (ja) | 2009-10-09 | 2013-11-06 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
KR101794069B1 (ko) * | 2010-05-26 | 2017-12-04 | 삼성전자주식회사 | 반도체 제조설비 및 그의 시즈닝 공정 최적화 방법 |
JP2013030696A (ja) * | 2011-07-29 | 2013-02-07 | Ulvac Japan Ltd | プラズマエッチング装置、及びプラズマクリーニング方法 |
JP5933222B2 (ja) * | 2011-11-08 | 2016-06-08 | 東京エレクトロン株式会社 | 温度制御方法、制御装置及びプラズマ処理装置 |
JP2013191802A (ja) * | 2012-03-15 | 2013-09-26 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
JP6064032B2 (ja) * | 2013-03-15 | 2017-01-18 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
CN104233191A (zh) * | 2013-06-08 | 2014-12-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 加热腔室及等离子体加工设备 |
JP6219227B2 (ja) * | 2014-05-12 | 2017-10-25 | 東京エレクトロン株式会社 | ヒータ給電機構及びステージの温度制御方法 |
JP6407694B2 (ja) * | 2014-12-16 | 2018-10-17 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP2016136554A (ja) | 2015-01-23 | 2016-07-28 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03190125A (ja) * | 1989-12-19 | 1991-08-20 | Fujitsu Ltd | ドライエッチング装置 |
JPH05243167A (ja) * | 1992-02-28 | 1993-09-21 | Sony Corp | 半導体装置の製造方法 |
JPH09162176A (ja) * | 1995-12-06 | 1997-06-20 | Yamaha Corp | プラズマ処理装置 |
US6094334A (en) * | 1999-03-02 | 2000-07-25 | Applied Materials, Inc. | Polymer chuck with heater and method of manufacture |
JP4236329B2 (ja) * | 1999-04-15 | 2009-03-11 | 日本碍子株式会社 | プラズマ処理装置 |
JP2001085401A (ja) * | 1999-09-13 | 2001-03-30 | Hitachi Ltd | 真空処理装置およびそのクリーニング方法 |
JP2001267406A (ja) * | 2000-03-21 | 2001-09-28 | Mitsubishi Electric Corp | 静電吸着電極のクリーニング方法および装置 |
EP1371751B1 (en) * | 2001-02-09 | 2011-08-17 | Tokyo Electron Limited | Film forming device |
JP2004235423A (ja) * | 2003-01-30 | 2004-08-19 | Seiko Epson Corp | 半導体基板の清浄方法、半導体装置の製造方法及びその製造装置 |
US6825617B2 (en) * | 2003-02-27 | 2004-11-30 | Hitachi High-Technologies Corporation | Semiconductor processing apparatus |
JP3764452B2 (ja) * | 2003-10-14 | 2006-04-05 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP4421874B2 (ja) * | 2003-10-31 | 2010-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP4490704B2 (ja) * | 2004-02-27 | 2010-06-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
JP2006351887A (ja) * | 2005-06-17 | 2006-12-28 | Hitachi High-Technologies Corp | プラズマ処理装置 |
-
2007
- 2007-08-29 US US11/846,899 patent/US20080237184A1/en not_active Abandoned
-
2008
- 2008-01-28 JP JP2008015755A patent/JP5124295B2/ja active Active
- 2008-02-27 TW TW97106829A patent/TWI474372B/zh active
- 2008-02-28 KR KR1020080018161A patent/KR100984309B1/ko active IP Right Grant
-
2009
- 2009-10-09 KR KR1020090096175A patent/KR100984313B1/ko active IP Right Grant
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2012
- 2012-08-21 JP JP2012181985A patent/JP2013008987A/ja active Pending
Also Published As
Publication number | Publication date |
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KR20090122163A (ko) | 2009-11-26 |
TW200849321A (en) | 2008-12-16 |
JP2008277746A (ja) | 2008-11-13 |
KR20080089168A (ko) | 2008-10-06 |
KR100984313B1 (ko) | 2010-09-30 |
KR100984309B1 (ko) | 2010-09-30 |
JP2013008987A (ja) | 2013-01-10 |
US20080237184A1 (en) | 2008-10-02 |
TWI474372B (zh) | 2015-02-21 |
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