JP5123987B2 - 圧電デバイス、および圧電デバイスの周波数調整方法 - Google Patents

圧電デバイス、および圧電デバイスの周波数調整方法 Download PDF

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Publication number
JP5123987B2
JP5123987B2 JP2010122288A JP2010122288A JP5123987B2 JP 5123987 B2 JP5123987 B2 JP 5123987B2 JP 2010122288 A JP2010122288 A JP 2010122288A JP 2010122288 A JP2010122288 A JP 2010122288A JP 5123987 B2 JP5123987 B2 JP 5123987B2
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JP
Japan
Prior art keywords
frequency
metal film
piezoelectric device
package
vibrating piece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010122288A
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English (en)
Japanese (ja)
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JP2011250225A (ja
JP2011250225A5 (https=
Inventor
裕一 川瀬
俊昭 茂木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Dempa Kogyo Co Ltd
Original Assignee
Nihon Dempa Kogyo Co Ltd
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Filing date
Publication date
Application filed by Nihon Dempa Kogyo Co Ltd filed Critical Nihon Dempa Kogyo Co Ltd
Priority to JP2010122288A priority Critical patent/JP5123987B2/ja
Priority to US13/117,495 priority patent/US8604677B2/en
Publication of JP2011250225A publication Critical patent/JP2011250225A/ja
Publication of JP2011250225A5 publication Critical patent/JP2011250225A5/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/21—Crystal tuning forks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0595—Holders or supports the holder support and resonator being formed in one body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1035—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0428—Modification of the thickness of an element of an electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0492—Resonance frequency during the manufacture of a tuning-fork

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2010122288A 2010-05-28 2010-05-28 圧電デバイス、および圧電デバイスの周波数調整方法 Expired - Fee Related JP5123987B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010122288A JP5123987B2 (ja) 2010-05-28 2010-05-28 圧電デバイス、および圧電デバイスの周波数調整方法
US13/117,495 US8604677B2 (en) 2010-05-28 2011-05-27 Piezoelectric devices including frequency-adjustment units

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010122288A JP5123987B2 (ja) 2010-05-28 2010-05-28 圧電デバイス、および圧電デバイスの周波数調整方法

Publications (3)

Publication Number Publication Date
JP2011250225A JP2011250225A (ja) 2011-12-08
JP2011250225A5 JP2011250225A5 (https=) 2012-04-19
JP5123987B2 true JP5123987B2 (ja) 2013-01-23

Family

ID=45021501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010122288A Expired - Fee Related JP5123987B2 (ja) 2010-05-28 2010-05-28 圧電デバイス、および圧電デバイスの周波数調整方法

Country Status (2)

Country Link
US (1) US8604677B2 (https=)
JP (1) JP5123987B2 (https=)

Families Citing this family (18)

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Publication number Priority date Publication date Assignee Title
DE102012202727B4 (de) * 2012-02-22 2015-07-02 Vectron International Gmbh Verfahren zur Verbindung eines ersten elektronischen Bauelements mit einem zweiten Bauelement
WO2014002891A1 (ja) * 2012-06-27 2014-01-03 株式会社村田製作所 音叉型水晶振動子及びその製造方法
JP6167494B2 (ja) * 2012-09-26 2017-07-26 セイコーエプソン株式会社 電子デバイス用容器の製造方法、電子デバイスの製造方法、電子デバイス、電子機器及び移動体機器
JP6349622B2 (ja) 2013-03-14 2018-07-04 セイコーエプソン株式会社 振動素子、振動子、発振器、電子機器および移動体
US20140292433A1 (en) * 2013-03-29 2014-10-02 Seiko Epson Corporation Resonator element, resonator, oscillator, electronic apparatus, and moving object
JP2015097368A (ja) * 2013-11-16 2015-05-21 セイコーエプソン株式会社 振動子、発振器、電子機器および移動体
JP2015128268A (ja) 2013-12-27 2015-07-09 セイコーエプソン株式会社 振動素子、振動子、発振器、電子機器、物理量センサー、移動体および振動素子の周波数調整方法
JP6719178B2 (ja) * 2015-05-22 2020-07-08 エスアイアイ・クリスタルテクノロジー株式会社 圧電振動片の製造方法及び圧電振動子の製造方法
US10658255B2 (en) * 2017-01-03 2020-05-19 Advanced Semsconductor Engineering, Inc. Semiconductor device package and a method of manufacturing the same
JP6439808B2 (ja) * 2017-01-31 2018-12-19 株式会社大真空 音叉型振動子
JP2018061286A (ja) * 2017-12-08 2018-04-12 セイコーエプソン株式会社 振動素子、振動子、発振器、電子機器および移動体
JP2019216320A (ja) * 2018-06-11 2019-12-19 リバーエレテック株式会社 水晶デバイス及び水晶デバイスの周波数調整方法
JP2021132315A (ja) * 2020-02-20 2021-09-09 セイコーエプソン株式会社 振動素子、振動デバイス、電子機器、移動体および振動素子の製造方法
JP2021132314A (ja) 2020-02-20 2021-09-09 セイコーエプソン株式会社 振動素子、振動デバイス、電子機器、移動体および振動素子の製造方法
JP7060073B2 (ja) * 2020-12-23 2022-04-26 セイコーエプソン株式会社 振動素子、振動子、発振器、電子機器および移動体
US20250038729A1 (en) * 2021-09-30 2025-01-30 Daishinku Corporation Method for adjusting frequency of piezoelectric resonator device and piezoelectric resonator device
US20250070739A1 (en) * 2022-01-21 2025-02-27 Daishinku Corporation Piezoelectric resonator device and method for adjusting frequency of piezoelectric resonator device
WO2023157504A1 (ja) * 2022-02-17 2023-08-24 株式会社大真空 圧電振動デバイスの周波数調整方法および圧電振動デバイス

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3843779B2 (ja) * 2001-08-14 2006-11-08 セイコーエプソン株式会社 圧電デバイス、圧電デバイスを利用した携帯電話装置及び圧電デバイスを利用した電子機器
JP2003332872A (ja) * 2002-05-14 2003-11-21 Seiko Instruments Inc 圧電振動子およびその製造方法
CN101946403B (zh) * 2008-02-16 2014-12-10 精工电子水晶科技股份有限公司 压电振动器、压电振动器的制造方法、振荡器、电子设备及电波钟
JP2009225219A (ja) * 2008-03-18 2009-10-01 Citizen Holdings Co Ltd 圧電デバイスおよびその製造方法
JP5175128B2 (ja) * 2008-04-04 2013-04-03 日本電波工業株式会社 音叉型圧電振動片および圧電デバイス

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Publication number Publication date
JP2011250225A (ja) 2011-12-08
US8604677B2 (en) 2013-12-10
US20110291524A1 (en) 2011-12-01

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