JP5116212B2 - 薄膜トランジスタの作製方法 - Google Patents

薄膜トランジスタの作製方法 Download PDF

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Publication number
JP5116212B2
JP5116212B2 JP2005076640A JP2005076640A JP5116212B2 JP 5116212 B2 JP5116212 B2 JP 5116212B2 JP 2005076640 A JP2005076640 A JP 2005076640A JP 2005076640 A JP2005076640 A JP 2005076640A JP 5116212 B2 JP5116212 B2 JP 5116212B2
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Japan
Prior art keywords
light
layer
region
electrode layer
substrate
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Expired - Fee Related
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JP2005076640A
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English (en)
Japanese (ja)
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JP2005303283A5 (enExample
JP2005303283A (ja
Inventor
慎志 前川
裕子 山本
厳 藤井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005076640A priority Critical patent/JP5116212B2/ja
Publication of JP2005303283A publication Critical patent/JP2005303283A/ja
Publication of JP2005303283A5 publication Critical patent/JP2005303283A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2005076640A 2004-03-19 2005-03-17 薄膜トランジスタの作製方法 Expired - Fee Related JP5116212B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005076640A JP5116212B2 (ja) 2004-03-19 2005-03-17 薄膜トランジスタの作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004081493 2004-03-19
JP2004081493 2004-03-19
JP2005076640A JP5116212B2 (ja) 2004-03-19 2005-03-17 薄膜トランジスタの作製方法

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JP2005303283A JP2005303283A (ja) 2005-10-27
JP2005303283A5 JP2005303283A5 (enExample) 2008-03-27
JP5116212B2 true JP5116212B2 (ja) 2013-01-09

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JP2005076640A Expired - Fee Related JP5116212B2 (ja) 2004-03-19 2005-03-17 薄膜トランジスタの作製方法

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007129007A (ja) * 2005-11-02 2007-05-24 Hitachi Ltd 有機半導体膜を有する半導体装置の製造方法
JP5275799B2 (ja) * 2006-07-31 2013-08-28 日本曹達株式会社 膜物性改善処理方法を用いてなる有機薄膜の製造方法
US8937013B2 (en) 2006-10-17 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor
JP5254589B2 (ja) * 2006-10-17 2013-08-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2008277469A (ja) * 2007-04-27 2008-11-13 Hitachi Ltd 感光性ｓａｍ膜の露光方法および半導体装置の製造方法
CN101740631B (zh) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
JP5953529B2 (ja) * 2012-02-28 2016-07-20 株式会社Ｊｏｌｅｄ 塗布装置とこれを用いた機能膜の製造方法
KR102090713B1 (ko) * 2013-06-25 2020-03-19 삼성디스플레이 주식회사 가요성 표시 패널 및 상기 가요성 표시 패널의 제조 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3403935B2 (ja) * 1997-03-14 2003-05-06 株式会社東芝 画像形成装置、画像形成方法、およびパターン形成方法、ならびにそれらに用いる感光体
JP2000171629A (ja) * 1998-12-09 2000-06-23 Canon Inc カラーフィルタとその製造方法、液晶素子
JP2000343848A (ja) * 1999-03-30 2000-12-12 Kyodo Printing Co Ltd 光触媒体を用いた画像形成材料および画像形成方法
JP2001250273A (ja) * 2000-03-07 2001-09-14 Toshiba Corp 光記録媒体
US6791144B1 (en) * 2000-06-27 2004-09-14 International Business Machines Corporation Thin film transistor and multilayer film structure and manufacturing method of same
JP3516441B2 (ja) * 2000-07-10 2004-04-05 インターナショナル・ビジネス・マシーンズ・コーポレーション アクティブマトリックス基板、表示装置、およびアクティブマトリックス基板の製造方法
JP2002040231A (ja) * 2000-07-31 2002-02-06 Dainippon Printing Co Ltd カラーフィルタおよびその製造方法
JP3421009B2 (ja) * 2000-09-28 2003-06-30 クラリアント ジャパン 株式会社 層間絶縁膜用感光性組成物及びパターン化層間絶縁膜の形成方法
CN1292496C (zh) * 2001-05-23 2006-12-27 造型逻辑有限公司 器件的图案形成
JP2003059940A (ja) * 2001-08-08 2003-02-28 Fuji Photo Film Co Ltd ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法
JP2003229579A (ja) * 2001-11-28 2003-08-15 Konica Corp 電界効果トランジスタ及びその製造方法
JP2004006700A (ja) * 2002-03-27 2004-01-08 Seiko Epson Corp 表面処理方法、表面処理基板、膜パターンの形成方法、電気光学装置の製造方法、電気光学装置、及び電子機器
JP4355900B2 (ja) * 2003-05-20 2009-11-04 日本電気株式会社 基板表面の平坦化方法、並びに平坦化基板、液晶表示装置、有機ｅｌ素子及び半導体装置の製造方法

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