JP5111462B2 - 焼結助剤用ホウケイ酸塩系ガラス組成物、誘電体組成物、及びこれを利用した積層セラミックキャパシタ - Google Patents
焼結助剤用ホウケイ酸塩系ガラス組成物、誘電体組成物、及びこれを利用した積層セラミックキャパシタ Download PDFInfo
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Description
上記式中、R2Oはアルカリ酸化物であり、MOはアルカリ土類酸化物であり、Re2O3は希土類酸化物であり、a+b+c+d+e=100、5≦a≦20、0≦b≦20、5≦c≦20、10≦d≦30、及び40≦e≦70を満たす。
上記式中、R2Oはアルカリ酸化物であり、MOはアルカリ土類酸化物であり、Re2O3は希土類酸化物であり、a+b+c+d+e=100、5≦a≦20、0≦b≦20、5≦c≦20、10≦d≦30、及び40≦e≦70を満たす。
実施例(a1〜a17)
下記表1に示すように各元素を秤量して十分に混合した後、1400〜1500℃で溶融した。その後、ツインローラにより急冷してガラスフレークを得て、これを乾式粉砕した後に気相熱処理することにより、100〜150nmの平均粒度を有する超微粒球状粉体のガラス粉末を製造した。
実施例(A1〜A16)及び比較例(B1〜B6)
本発明の実施例においては、超薄層・高積層の商用チップの製作に先立って、約3μm厚さのシートを10層程度積層した低積層の簡易チップ試片を製作し、諸物性を観察した。
前記実施例及び比較例で製作された試片を利用して、以下のような特性を測定した。
キャパシタンス・メータ(アジレント・テクノロジー社、4278A)を利用して、1KHz、1Vの条件下で、0.01〜10Vの交流電圧の変化による各試片の容量及び誘電損失の変化値を測定した。このうち、誘電体の単位厚さ当たりの印加電圧が1V/μmに該当するときの容量及び誘電損失を求め、このときの容量と焼成試片の誘電体層の平均厚さ、積層数、電極面積などを下記式に代入し、各焼成温度による誘電体の誘電率を求めた。
上記式中、Cは容量であり、εrは誘電体の誘電率であり、ε0は真空の誘電率であり、Nは積層数であり、Sは電極の面積であり、tdは誘電体層の厚さである。
高温絶縁抵抗測定設備を利用して150℃恒温状態で、誘電体の単位厚さ当たり6.3Vが印加される電圧(6.3V/μm)を定格電圧1Vrに設定し、絶縁抵抗を測定した。ここで、各試片の絶縁破壊臨界電圧は、印加電圧を30分間隔で昇圧(DC電圧の上昇)することによって試片の絶縁抵抗値が105Ω以下に下がるときの電圧と定めた。
TCC(Temperature Coefficient of Capacitance)測定装備(4220Aテストチャンバー)を利用して、−55〜135℃の区間での容量変化を測定し、X5R特性を満たすか否かを確認するために、25℃の容量に対する85℃の容量の変化を代表値として調べた。前記諸電気的特性の結果を下記表3に示す。
101、103 内部電極
102 誘電体層
104、105 外部電極
Claims (11)
- チタン酸バリウム(BaTiO 3 )と、
前記チタン酸バリウム(BaTiO 3 )100モルに対して下記式で示される焼結助剤用ホウケイ酸塩系ガラス組成物を含有するガラス粉末0.1〜3.0モルと、を含む誘電体組成物。
aR2O−bMO−cRe2O3−dB2O3−eSiO2
上記式中、R2OはLi 2 O及びK 2 Oからなる群から選択される1つ以上のアルカリ酸化物であり、MOはアルカリ土類酸化物であり、Re2O3は希土類酸化物であり、a+b+c+d+e=100、5≦a≦20、0≦b≦20、5≦c≦20、10≦d≦30、及び40≦e≦70を満たす。 - 前記MOは、CaO及びBaOからなる群から選択される1つ以上のアルカリ土類酸化物であることを特徴とする請求項1に記載の誘電体組成物。
- 前記Re2O3は、Y2O3、Ho2O3、及びDy2O3からなる群から選択される1つ以上の希土類酸化物であることを特徴とする請求項1に記載の誘電体組成物。
- 前記チタン酸バリウム(BaTiO3)は、平均粒径が150〜200nmであることを特徴とする請求項1に記載の誘電体組成物。
- 前記ガラス粉末は、平均粒径が100〜150nmであることを特徴とする請求項1に記載の誘電体組成物。
- MgO、希土類酸化物、MnO、及びV2O5からなる群から選択される1つ以上の添加剤をさらに含むことを特徴とする請求項1に記載の誘電体組成物。
- 前記希土類酸化物は、Y2O3、Ho2O3、及びDy2O3からなる群から選択され
る1つ以上であることを特徴とする請求項6に記載の誘電体組成物。 - 請求項1に記載の誘電体組成物を含有する複数の誘電体層と、
前記誘電体層の間に形成される内部電極と、
前記内部電極に電気的に接続された外部電極と
を含む積層セラミックキャパシタ。 - 前記誘電体層は、厚さが1.0〜1.5μmであることを特徴とする請求項8に記載の積層セラミックキャパシタ。
- 前記内部電極は、Ni又はNi合金を含むことを特徴とする請求項8に記載の積層セラミックキャパシタ。
- 前記外部電極は、Cu又はNiを含むことを特徴とする請求項8に記載の積層セラミックキャパシタ。
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KR10-2008-0135771 | 2008-12-29 | ||
KR1020080135771A KR100983046B1 (ko) | 2008-12-29 | 2008-12-29 | 소결조제용 붕규산염계 유리 조성물, 유전체 조성물 및 이를 이용한 적층 세라믹 커패시터 |
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TW201124356A (en) * | 2010-01-15 | 2011-07-16 | Darfon Electronics Corp | Ceramic powder composition, ceramic material and laminated ceramic capacitor produced by the same. |
KR101179295B1 (ko) * | 2010-08-06 | 2012-09-03 | 삼성전기주식회사 | 내환원성 유전체 조성물 및 이를 포함하는 세라믹 전자 부품 |
KR101226283B1 (ko) | 2010-09-03 | 2013-02-28 | 삼화콘덴서공업주식회사 | 유전체 조성물 및 이를 이용한 고용량 적층 세라믹 커패시터 |
KR101483819B1 (ko) * | 2011-01-18 | 2015-01-16 | 삼성전기주식회사 | 글라스 분말 및 이의 제조방법 |
KR20120091655A (ko) * | 2011-02-09 | 2012-08-20 | 삼성전기주식회사 | 적층 세라믹 전자부품 및 이의 제조방법 |
US9005748B1 (en) | 2011-03-04 | 2015-04-14 | Insulating Coatings Of America, Inc. | Coating containing borosilicate flake glass |
CN103482871B (zh) * | 2013-08-13 | 2015-06-24 | 沈阳市航达科技有限责任公司 | 一种降低烧结温度的高温搪瓷涂料的制备方法 |
KR101994745B1 (ko) * | 2014-12-16 | 2019-09-30 | 삼성전기주식회사 | 저온 소성 유전체 조성물 및 적층 세라믹 커패시터 |
JP6795292B2 (ja) * | 2015-09-15 | 2020-12-02 | Tdk株式会社 | 積層電子部品 |
JP2017120853A (ja) * | 2015-12-28 | 2017-07-06 | Tdk株式会社 | セラミック電子部品 |
CN108476593A (zh) * | 2016-01-13 | 2018-08-31 | 株式会社村田制作所 | 层叠体以及电子部件 |
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JP3663294B2 (ja) | 1998-03-31 | 2005-06-22 | 京セラ株式会社 | 誘電体磁器 |
JP2002356371A (ja) | 2000-10-30 | 2002-12-13 | Fdk Corp | 誘電体磁器組成物及び積層セラミックコンデンサ |
JP2003055043A (ja) | 2001-08-21 | 2003-02-26 | Philips Japan Ltd | 誘電体磁器組成物 |
JP4923366B2 (ja) | 2001-09-13 | 2012-04-25 | 日本電気硝子株式会社 | モールドプレス成形用光学ガラス |
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