JP5103480B2 - ネオペンタシランを含む組成物及びその製造方法 - Google Patents

ネオペンタシランを含む組成物及びその製造方法 Download PDF

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Publication number
JP5103480B2
JP5103480B2 JP2009534570A JP2009534570A JP5103480B2 JP 5103480 B2 JP5103480 B2 JP 5103480B2 JP 2009534570 A JP2009534570 A JP 2009534570A JP 2009534570 A JP2009534570 A JP 2009534570A JP 5103480 B2 JP5103480 B2 JP 5103480B2
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Japan
Prior art keywords
neopentasilane
silane
tetrakis
trihalosilyl
composition
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Japanese (ja)
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JP2010507559A (ja
JP2010507559A5 (enExample
Inventor
キャナディー、ジョン・パトリック
ジョウ、シヤオビーン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
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Dow Corning Corp
Dow Silicones Corp
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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/04Hydrides of silicon
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02Silicon compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/54Silicon-containing compounds
    • C08K5/541Silicon-containing compounds containing oxygen
    • C08K5/5415Silicon-containing compounds containing oxygen containing at least one Si—O bond
    • C08K5/5419Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Silicon Compounds (AREA)
  • Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2009534570A 2006-10-24 2007-08-29 ネオペンタシランを含む組成物及びその製造方法 Active JP5103480B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US85395806P 2006-10-24 2006-10-24
US60/853,958 2006-10-24
PCT/US2007/019165 WO2008051328A1 (en) 2006-10-24 2007-08-29 Composition comprising neopentasilane and method of preparing same

Publications (3)

Publication Number Publication Date
JP2010507559A JP2010507559A (ja) 2010-03-11
JP2010507559A5 JP2010507559A5 (enExample) 2011-08-25
JP5103480B2 true JP5103480B2 (ja) 2012-12-19

Family

ID=38896166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009534570A Active JP5103480B2 (ja) 2006-10-24 2007-08-29 ネオペンタシランを含む組成物及びその製造方法

Country Status (7)

Country Link
US (1) US8147789B2 (enExample)
EP (1) EP2076558B8 (enExample)
JP (1) JP5103480B2 (enExample)
KR (1) KR101506136B1 (enExample)
CN (1) CN101528813B (enExample)
TW (1) TWI412530B (enExample)
WO (1) WO2008051328A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008025260B4 (de) 2008-05-27 2010-03-18 Rev Renewable Energy Ventures, Inc. Halogeniertes Polysilan und thermisches Verfahren zu dessen Herstellung
DE102008042934A1 (de) * 2008-10-17 2010-04-22 Wacker Chemie Ag Verfahren zur Herstellung von Neopentasilanen
DE102009027194A1 (de) * 2009-06-25 2010-12-30 Wacker Chemie Ag Verfahren zur Herstellung von Dodecahalogenneopentasilanen
DE102009053804B3 (de) * 2009-11-18 2011-03-17 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
DE102009056731A1 (de) 2009-12-04 2011-06-09 Rev Renewable Energy Ventures, Inc. Halogenierte Polysilane und Polygermane
KR20130038829A (ko) 2010-04-06 2013-04-18 코비오 인코포레이티드 에피택셜 구조, 그 제조방법, 및 그것을 포함하는 소자
DE102010062984A1 (de) * 2010-12-14 2012-06-14 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Halogen- und Hydridosilane
DE102010063823A1 (de) * 2010-12-22 2012-06-28 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
TW201300459A (zh) * 2011-03-10 2013-01-01 Dow Corning 用於抗反射塗層的聚矽烷矽氧烷(polysilanesiloxane)樹脂
DE102011005387A1 (de) 2011-03-10 2012-09-13 Wacker Chemie Ag Verfahren zur Reduzierung des Aluminiumgehaltes von Neopentasilan
DE102012224202A1 (de) 2012-12-21 2014-07-10 Evonik Industries Ag Verfahren zum Hydrieren höherer Halogen-haltiger Silanverbindungen
US11091649B2 (en) 2013-09-05 2021-08-17 Jiangsu Nata Opto-Electronic Materials Co. Ltd. 2,2,4,4-tetrasilylpentasilane and its compositions, methods and uses
TWI634073B (zh) 2013-09-05 2018-09-01 道康寧公司 2,2,4,4-四矽基五矽烷及其組成物、方法及用途
DE102014018435A1 (de) * 2014-12-10 2016-06-16 Silicon Products Bitterfeld GmbH&CO.KG Verfahren zur Gewinnung von Hexachlordisilan aus in Prozessabgasströmen enthaltenen Gemischen von Chlorsilanen
US11117807B2 (en) * 2017-06-23 2021-09-14 Jiangsu Nata Opto-Electronic Materials Co. Ltd. Method of making aluminum-free neopentasilane
JP6944547B2 (ja) * 2017-06-29 2021-10-06 ナタ セミコンダクター マテリアルズ カンパニー リミテッド 1,1,1−トリクロロジシランの合成
KR20190101001A (ko) 2018-02-22 2019-08-30 박계균 주열식 가설 흙막이 벽체의 시공방법
EP3587348B1 (en) * 2018-06-29 2021-08-11 Evonik Operations GmbH Partially hydrogenated chlorosilanes and methods for preparing same by selective hydrogenation
JP7621162B2 (ja) * 2021-03-31 2025-01-24 株式会社日本触媒 環状水素化シラン化合物の製造方法
JP7580983B2 (ja) * 2020-09-08 2024-11-12 株式会社日本触媒 環状水素化ポリシラン化合物の製造方法
CN115417413B (zh) * 2022-08-31 2024-01-09 南大光电半导体材料有限公司 一种新戊硅烷中间体制备方法及其应用

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0760792B2 (ja) 1984-05-16 1995-06-28 キヤノン株式会社 堆積膜の形成方法
JPS6191010A (ja) 1984-10-09 1986-05-09 Canon Inc 堆積膜形成法
JP3517934B2 (ja) * 1994-03-24 2004-04-12 昭和電工株式会社 シリコン膜の形成方法
EP0902030B1 (en) * 1997-08-27 2002-10-02 Dow Corning Corporation Compounds containing tetradecachlorocyclohexasilane dianion
JPH11260729A (ja) * 1998-01-08 1999-09-24 Showa Denko Kk 高次シランの製造法
JP4465961B2 (ja) * 2000-08-02 2010-05-26 三菱マテリアル株式会社 六塩化二珪素の製造方法
KR101050377B1 (ko) 2001-02-12 2011-07-20 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
CN100471991C (zh) * 2002-10-18 2009-03-25 应用材料有限公司 采用硅化合物进行的含硅层沉积
US7540920B2 (en) * 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
US20040152287A1 (en) * 2003-01-31 2004-08-05 Sherrill Adrian B. Deposition of a silicon film

Also Published As

Publication number Publication date
WO2008051328A1 (en) 2008-05-02
TW200821322A (en) 2008-05-16
US20100176338A1 (en) 2010-07-15
CN101528813B (zh) 2011-10-26
KR20090079908A (ko) 2009-07-22
KR101506136B1 (ko) 2015-03-26
JP2010507559A (ja) 2010-03-11
US8147789B2 (en) 2012-04-03
EP2076558B8 (en) 2018-08-01
EP2076558B1 (en) 2018-04-18
EP2076558A1 (en) 2009-07-08
TWI412530B (zh) 2013-10-21
CN101528813A (zh) 2009-09-09

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