JP5102357B2 - 窒化ガリウムのエピタキシャル成長用基板 - Google Patents
窒化ガリウムのエピタキシャル成長用基板 Download PDFInfo
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- JP5102357B2 JP5102357B2 JP2010515582A JP2010515582A JP5102357B2 JP 5102357 B2 JP5102357 B2 JP 5102357B2 JP 2010515582 A JP2010515582 A JP 2010515582A JP 2010515582 A JP2010515582 A JP 2010515582A JP 5102357 B2 JP5102357 B2 JP 5102357B2
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02483—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
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- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Led Devices (AREA)
- Recrystallisation Techniques (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
図2は本発明の別の好ましい基板の図式断面図を示す。この基板は、保持体21上に直接堆積されさらにそれ自体ZnOベース層24でコートされた中間層23によってコートされた、アルカリ金属イオンの移行に対するバリヤーとして働く層22を含むスタックでコートされた保持体21で構成されている。
比較実施例の基板は、アルカリ金属イオンの移行に対するバリヤーとして働くSi3N4副層および酸化亜鉛層でコートされたガラス製保持体からなっている。
ガラス/ Si3N4(20 nm)/ZnO(200 nm)
本発明の実施例は、アンチモン(Sb)をドープされた混合酸化亜鉛スズの層を、Si3N4副層と酸化亜鉛層の間に、やはりマグネトロンスパッタリングで堆積させた点で、比較実施例とは異なっていた。
GaNベース層の結晶化に対する本発明の影響を各種の方法で研究した。
第一の方法によって、GaNの結晶の配向を、X線回折図におけるGaNに付随する回折のピークの面積を測定することによって比較した。
Claims (23)
- その面の少なくとも一方を、少なくとも一つの酸化亜鉛ベース層(13、24)を含む少なくとも一つの多層スタックでコートされた保持体(11、21)を備えた、III−NタイプまたはII−VIタイプの半導体層をエピタキシャル成長させるための基板として使用できる基板であって、
前記保持体(11、21)と前記少なくとも一つの酸化亜鉛ベース層(13、24)の間に、スズ(Sn)、亜鉛(Zn)、ガリウム(Ga)およびアンチモン(Sb)から選択される少なくとも2種の元素の酸化物を含む少なくとも一つの中間層(12、23)が配置されていることを特徴とする基板。 - 保持体(11、21)がその面の一方だけコートされ、および前記多層が、単一の酸化亜鉛ベース層(13、24)および/または単一の中間層(12、23)だけを含んでいる請求項1に記載の基板。
- 保持体(11、21)が、サファイア、炭化ケイ素、ケイ素、金属、石英、酸化亜鉛(ZnO)、スピネル、またはガラス質若しくは無定形の物質から選択される物質である請求項1または2に記載の基板。
- 前記ガラス質若しくは無定形の物質がシリカベースのガラスである、請求項3に記載の基板。
- 保持体(11、21)が、ストレインポイントが550℃以上であるシリカベースガラスである請求項1−4のいずれか一項に記載の基板。
- 少なくとも一つの副層(22)が、保持体(21)と中間層(23)の間に配置されている請求項1−5のいずれか一項に記載の基板。
- 副層(22)が、アルカリ金属イオンの移行に対するバリヤーとして働く副層である、請求項6に記載の基板。
- 副層(22)が、SiOC、Si3N4、SiO2、TiN、及びAl2O3のいずれか一つの物質からなっているか、前記物質の一つをベースとしているか、または前記物質の混合物の一つをベースとしている、請求項7に記載の基板。
- 中間層(12、23)が、酸化亜鉛ベース層(13、24)の下に,直接接触して配置されている請求項1−8のいずれか一項に記載の基板。
- 中間層(12、23)は、酸化亜鉛ベース層(13、24)が堆積される前、無定形である請求項1−9のいずれか一項に記載の基板。
- 中間層(12、23)が酸化スズ亜鉛ベース層である請求項1−10のいずれか一項に記載の基板。
- 酸化スズ亜鉛ベース層(12、23)が、Al、Ga、In、B、Y、La、Ge、Si、P、As、Sb、Bi、Ce、Ti、Zr、NbおよびTaから選択された少なくとも一つの原子でドープされている請求項11に記載の基板。
- 酸化亜鉛ベース層(13、24)が、酸化亜鉛からなる層である請求項1−12のいずれか一項に記載の基板。
- 前記酸化亜鉛が、その六方晶系形に、ウルツ鉱構造で結晶化された多結晶酸化亜鉛である、請求項13に記載の基板。
- 酸化亜鉛ベース層(13、24)が前記多層の最終層である請求項1−14のいずれか一項に記載の基板。
- 酸化亜鉛ベース層(13、24)の厚さが、10nmと500nmの間の厚さである、請求項1−15のいずれか一項に記載の基板。
- 中間層(12、23)の厚さが、2nmと100nmの間の厚さである、請求項1−16のいずれか一項に記載の基板。
- III−NタイプまたはII−VIタイプの半導体構造物でコートされた請求項1−17のいずれか一項に記載の基板。
- III−Nタイプの半導体構造物が窒化ガリウム(GaN)ベースの少なくとも一つの層を含む請求項18に記載の基板。
- II−VIタイプの半導体構造物が酸化亜鉛(ZnO)ベースの少なくとも一つの層を含む請求項18に記載の基板。
- 半導体構造物が、前記基板の表面にほぼ垂直の軸に沿って向いているワイヤ形状または柱形状のナノ構造物で製造された少なくとも一つの不連続層を含むかまたはその不連続層からなる請求項18−20のいずれか一項に記載の基板。
- 前記少なくとも一つの酸化亜鉛ベース層(13、24)および前記少なくとも一つの中間層(12、23)をスパッタリングで堆積させる、請求項1−21のいずれか一項に記載の基板を得る方法。
- 中間層(12、23)を堆積させるステップが無定形層を生成する請求項22に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0756496 | 2007-07-13 | ||
FR0756496A FR2918791B1 (fr) | 2007-07-13 | 2007-07-13 | Substrat pour la croissance epitaxiale de nitrure de gallium |
PCT/FR2008/051316 WO2009013425A2 (fr) | 2007-07-13 | 2008-07-11 | Substrat pour la croissance epitaxiale de nitrure de gallium |
Publications (3)
Publication Number | Publication Date |
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JP2010533371A JP2010533371A (ja) | 2010-10-21 |
JP2010533371A5 JP2010533371A5 (ja) | 2012-07-12 |
JP5102357B2 true JP5102357B2 (ja) | 2012-12-19 |
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Application Number | Title | Priority Date | Filing Date |
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JP2010515582A Expired - Fee Related JP5102357B2 (ja) | 2007-07-13 | 2008-07-11 | 窒化ガリウムのエピタキシャル成長用基板 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8278656B2 (ja) |
EP (1) | EP2171751A2 (ja) |
JP (1) | JP5102357B2 (ja) |
KR (1) | KR20100048995A (ja) |
CN (1) | CN101689511A (ja) |
FR (1) | FR2918791B1 (ja) |
WO (1) | WO2009013425A2 (ja) |
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2007
- 2007-07-13 FR FR0756496A patent/FR2918791B1/fr not_active Expired - Fee Related
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2008
- 2008-07-11 KR KR1020107000664A patent/KR20100048995A/ko not_active Application Discontinuation
- 2008-07-11 CN CN200880024413A patent/CN101689511A/zh active Pending
- 2008-07-11 JP JP2010515582A patent/JP5102357B2/ja not_active Expired - Fee Related
- 2008-07-11 EP EP08826629A patent/EP2171751A2/fr not_active Withdrawn
- 2008-07-11 WO PCT/FR2008/051316 patent/WO2009013425A2/fr active Application Filing
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Also Published As
Publication number | Publication date |
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FR2918791B1 (fr) | 2009-12-04 |
KR20100048995A (ko) | 2010-05-11 |
US20100207116A1 (en) | 2010-08-19 |
WO2009013425A3 (fr) | 2009-03-12 |
EP2171751A2 (fr) | 2010-04-07 |
US8278656B2 (en) | 2012-10-02 |
FR2918791A1 (fr) | 2009-01-16 |
CN101689511A (zh) | 2010-03-31 |
WO2009013425A2 (fr) | 2009-01-29 |
JP2010533371A (ja) | 2010-10-21 |
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