JP5100012B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP5100012B2
JP5100012B2 JP2006013539A JP2006013539A JP5100012B2 JP 5100012 B2 JP5100012 B2 JP 5100012B2 JP 2006013539 A JP2006013539 A JP 2006013539A JP 2006013539 A JP2006013539 A JP 2006013539A JP 5100012 B2 JP5100012 B2 JP 5100012B2
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JP
Japan
Prior art keywords
film
insulating film
groove
layer
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006013539A
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English (en)
Japanese (ja)
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JP2006237581A (ja
JP2006237581A5 (https=
Inventor
卓也 鶴目
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006013539A priority Critical patent/JP5100012B2/ja
Publication of JP2006237581A publication Critical patent/JP2006237581A/ja
Publication of JP2006237581A5 publication Critical patent/JP2006237581A5/ja
Application granted granted Critical
Publication of JP5100012B2 publication Critical patent/JP5100012B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Details Of Aerials (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
JP2006013539A 2005-01-28 2006-01-23 半導体装置及びその作製方法 Expired - Fee Related JP5100012B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006013539A JP5100012B2 (ja) 2005-01-28 2006-01-23 半導体装置及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005022191 2005-01-28
JP2005022191 2005-01-28
JP2006013539A JP5100012B2 (ja) 2005-01-28 2006-01-23 半導体装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2006237581A JP2006237581A (ja) 2006-09-07
JP2006237581A5 JP2006237581A5 (https=) 2009-01-22
JP5100012B2 true JP5100012B2 (ja) 2012-12-19

Family

ID=37044835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006013539A Expired - Fee Related JP5100012B2 (ja) 2005-01-28 2006-01-23 半導体装置及びその作製方法

Country Status (1)

Country Link
JP (1) JP5100012B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080018052A (ko) * 2006-08-23 2008-02-27 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
TWI433306B (zh) 2006-09-29 2014-04-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8044813B1 (en) 2006-11-16 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Radio field intensity measurement device, and radio field intensity detector and game console using the same
KR101596698B1 (ko) * 2008-04-25 2016-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
JP2010016240A (ja) * 2008-07-04 2010-01-21 Panasonic Corp インダクタとその製造方法
JP5407423B2 (ja) * 2009-02-27 2014-02-05 大日本印刷株式会社 電子装置及び電子デバイス

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01272135A (ja) * 1988-04-25 1989-10-31 Mitsubishi Electric Corp 半導体集積回路装置
JPH04343228A (ja) * 1991-05-21 1992-11-30 Mitsubishi Electric Corp 半導体装置の製造方法
JPH05175198A (ja) * 1991-12-25 1993-07-13 Kawasaki Steel Corp 半導体装置
JP4332243B2 (ja) * 1998-10-28 2009-09-16 Ｔｄｋ株式会社 薄膜コイル部品
JP2003243631A (ja) * 2002-02-18 2003-08-29 Mitsubishi Electric Corp 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム
JP4393859B2 (ja) * 2002-12-27 2010-01-06 株式会社半導体エネルギー研究所 記録媒体の作製方法
JP4323813B2 (ja) * 2003-01-14 2009-09-02 キヤノン株式会社 基板の製造方法
JP4566578B2 (ja) * 2003-02-24 2010-10-20 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
JP2004355337A (ja) * 2003-05-29 2004-12-16 Toppan Forms Co Ltd Ｒｆ−ｉｄメディア及びその製造方法、並びに情報書込／読出装置
KR100598113B1 (ko) * 2005-01-03 2006-07-07 삼성전자주식회사 인덕터 및 인덕터 형성 방법

Also Published As

Publication number Publication date
JP2006237581A (ja) 2006-09-07

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