JP5098135B2 - 半導体レーザ素子 - Google Patents

半導体レーザ素子 Download PDF

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Publication number
JP5098135B2
JP5098135B2 JP2005139806A JP2005139806A JP5098135B2 JP 5098135 B2 JP5098135 B2 JP 5098135B2 JP 2005139806 A JP2005139806 A JP 2005139806A JP 2005139806 A JP2005139806 A JP 2005139806A JP 5098135 B2 JP5098135 B2 JP 5098135B2
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JP
Japan
Prior art keywords
electrode
layer
film
insulating film
semiconductor laser
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Expired - Fee Related
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JP2005139806A
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English (en)
Japanese (ja)
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JP2005354049A5 (enExample
JP2005354049A (ja
Inventor
靖長 小谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
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Nichia Corp
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Priority to JP2005139806A priority Critical patent/JP5098135B2/ja
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Publication of JP2005354049A5 publication Critical patent/JP2005354049A5/ja
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  • Semiconductor Lasers (AREA)
JP2005139806A 2004-05-12 2005-05-12 半導体レーザ素子 Expired - Fee Related JP5098135B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005139806A JP5098135B2 (ja) 2004-05-12 2005-05-12 半導体レーザ素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004142655 2004-05-12
JP2004142655 2004-05-12
JP2005139806A JP5098135B2 (ja) 2004-05-12 2005-05-12 半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2005354049A JP2005354049A (ja) 2005-12-22
JP2005354049A5 JP2005354049A5 (enExample) 2008-06-05
JP5098135B2 true JP5098135B2 (ja) 2012-12-12

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ID=35588205

Family Applications (1)

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JP2005139806A Expired - Fee Related JP5098135B2 (ja) 2004-05-12 2005-05-12 半導体レーザ素子

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JP (1) JP5098135B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4601391B2 (ja) * 2004-10-28 2010-12-22 シャープ株式会社 窒化物半導体素子およびその製造方法
JP5018037B2 (ja) * 2005-12-28 2012-09-05 三菱化学株式会社 ＧａＮ系発光ダイオードの製造方法
DE102009015314B4 (de) * 2009-03-27 2023-04-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaservorrichtung
JP5742325B2 (ja) * 2010-03-25 2015-07-01 日亜化学工業株式会社 半導体レーザ素子及びその製造方法
JP5440565B2 (ja) * 2011-07-25 2014-03-12 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ、半導体レーザ装置
US9310664B2 (en) * 2013-12-20 2016-04-12 Sharp Kabushiki Kaisha Frequency-converted light source
JP6826395B2 (ja) * 2016-08-26 2021-02-03 ローム株式会社 半導体発光素子
JP2020126995A (ja) * 2019-02-06 2020-08-20 シャープ株式会社 半導体レーザ素子及びその製造方法
DE102019106536B4 (de) * 2019-03-14 2024-11-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode und Verfahren zur Herstellung einer Halbleiterlaserdiode
EP4379822A4 (en) * 2021-08-10 2024-10-30 Sony Semiconductor Solutions Corporation Conductive layer structure and light-emitting device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04232922A (ja) * 1990-12-28 1992-08-21 Sanyo Electric Co Ltd 液晶表示装置の製造方法
JPH11220212A (ja) * 1998-02-02 1999-08-10 Toshiba Corp 光素子、光素子の駆動方法及び半導体レーザ素子
JP3716974B2 (ja) * 2000-06-08 2005-11-16 日亜化学工業株式会社 半導体レーザ素子及びその製造方法
JP2003133632A (ja) * 2001-10-30 2003-05-09 Eco 21 Inc 半導体レーザーモジュール及びその製造方法
JP2003163409A (ja) * 2001-11-26 2003-06-06 Eco 21 Inc 半導体レーザーモジュール
JP4302347B2 (ja) * 2001-12-18 2009-07-22 シャープ株式会社 薄膜トランジスタ基板及びその製造方法
JP4474887B2 (ja) * 2003-10-01 2010-06-09 日亜化学工業株式会社 半導体レーザ素子

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