JP5089027B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP5089027B2
JP5089027B2 JP2005154536A JP2005154536A JP5089027B2 JP 5089027 B2 JP5089027 B2 JP 5089027B2 JP 2005154536 A JP2005154536 A JP 2005154536A JP 2005154536 A JP2005154536 A JP 2005154536A JP 5089027 B2 JP5089027 B2 JP 5089027B2
Authority
JP
Japan
Prior art keywords
layer
electrode layer
insulating layer
substrate
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005154536A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006013480A (ja
JP2006013480A5 (enrdf_load_stackoverflow
Inventor
慎志 前川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005154536A priority Critical patent/JP5089027B2/ja
Publication of JP2006013480A publication Critical patent/JP2006013480A/ja
Publication of JP2006013480A5 publication Critical patent/JP2006013480A5/ja
Application granted granted Critical
Publication of JP5089027B2 publication Critical patent/JP5089027B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2005154536A 2004-05-28 2005-05-26 半導体装置 Expired - Fee Related JP5089027B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005154536A JP5089027B2 (ja) 2004-05-28 2005-05-26 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004159939 2004-05-28
JP2004159939 2004-05-28
JP2005154536A JP5089027B2 (ja) 2004-05-28 2005-05-26 半導体装置

Publications (3)

Publication Number Publication Date
JP2006013480A JP2006013480A (ja) 2006-01-12
JP2006013480A5 JP2006013480A5 (enrdf_load_stackoverflow) 2008-07-10
JP5089027B2 true JP5089027B2 (ja) 2012-12-05

Family

ID=35780280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005154536A Expired - Fee Related JP5089027B2 (ja) 2004-05-28 2005-05-26 半導体装置

Country Status (1)

Country Link
JP (1) JP5089027B2 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7851788B2 (en) * 2006-02-28 2010-12-14 Pioneer Corporation Organic transistor and manufacturing method thereof
JPWO2007099689A1 (ja) * 2006-02-28 2009-07-16 パイオニア株式会社 有機トランジスタ及びその製造方法
US7678701B2 (en) * 2006-07-31 2010-03-16 Eastman Kodak Company Flexible substrate with electronic devices formed thereon
JP5205894B2 (ja) * 2007-09-21 2013-06-05 大日本印刷株式会社 有機半導体素子、有機半導体素子の製造方法、有機トランジスタアレイ、およびディスプレイ
JP5489429B2 (ja) * 2008-07-09 2014-05-14 富士フイルム株式会社 薄膜電界効果型トランジスタ
EP2172804B1 (en) * 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
KR102775255B1 (ko) 2009-09-04 2025-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
JP5886491B2 (ja) * 2010-11-12 2016-03-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102238180B1 (ko) 2014-08-05 2021-04-08 엘지디스플레이 주식회사 플렉서블 표시장치 및 그 제조방법
JP7083396B2 (ja) * 2018-09-03 2022-06-10 富士フイルム株式会社 有機薄膜トランジスタ、および、有機薄膜トランジスタの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6018152B2 (ja) * 1976-04-23 1985-05-09 工業技術院長 太陽電池装置の作製方法
JP3047246B2 (ja) * 1990-09-26 2000-05-29 株式会社リコー Dramバッテリバックアップ方法
JP4094179B2 (ja) * 1998-08-21 2008-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3787839B2 (ja) * 2002-04-22 2006-06-21 セイコーエプソン株式会社 デバイスの製造方法、デバイス及び電子機器
JP4490650B2 (ja) * 2002-04-26 2010-06-30 東芝モバイルディスプレイ株式会社 El表示装置の駆動方法、およびel表示装置

Also Published As

Publication number Publication date
JP2006013480A (ja) 2006-01-12

Similar Documents

Publication Publication Date Title
US8912546B2 (en) Thin film transistor and display device
KR101228859B1 (ko) 디스플레이 디바이스 및 이의 제조 방법
CN101673758B (zh) 显示器件及其制造方法
CN100593244C (zh) 形成图案的方法、薄膜晶体管、显示设备及其制造方法
US8158517B2 (en) Method for manufacturing wiring substrate, thin film transistor, display device and television device
JP4879541B2 (ja) 表示装置の作製方法
CN101123219A (zh) 显示设备和制造显示设备的方法
JP2006237586A (ja) 半導体装置、電子機器、半導体装置の作製方法
JP4628004B2 (ja) 薄膜トランジスタの作製方法
JP4969041B2 (ja) 表示装置の作製方法
JP4854994B2 (ja) 配線基板の作製方法及び薄膜トランジスタの作製方法
JP5057652B2 (ja) 薄膜トランジスタの作製方法
JP5089027B2 (ja) 半導体装置
JP2006113568A (ja) 表示装置、及び表示装置の作製方法
JP5116212B2 (ja) 薄膜トランジスタの作製方法
JP4877865B2 (ja) 薄膜トランジスタの作製方法及び表示装置の作製方法
JP2005286320A (ja) パターン形成方法、薄膜トランジスタ、表示装置及びそれらの作製方法、並びにテレビジョン装置
JP4879496B2 (ja) パターン形成方法
JP5072202B2 (ja) 表示装置の作製方法
JP2005340802A (ja) 半導体装置及び表示装置の作製方法
JP5025208B2 (ja) 薄膜トランジスタの作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080523

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080523

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110830

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110901

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110928

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120221

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120410

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120904

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120911

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150921

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150921

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees