JP2006013480A5 - - Google Patents

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Publication number
JP2006013480A5
JP2006013480A5 JP2005154536A JP2005154536A JP2006013480A5 JP 2006013480 A5 JP2006013480 A5 JP 2006013480A5 JP 2005154536 A JP2005154536 A JP 2005154536A JP 2005154536 A JP2005154536 A JP 2005154536A JP 2006013480 A5 JP2006013480 A5 JP 2006013480A5
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JP
Japan
Prior art keywords
conductive layer
insulating film
forming
insulating
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005154536A
Other languages
English (en)
Japanese (ja)
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JP2006013480A (ja
JP5089027B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005154536A priority Critical patent/JP5089027B2/ja
Priority claimed from JP2005154536A external-priority patent/JP5089027B2/ja
Publication of JP2006013480A publication Critical patent/JP2006013480A/ja
Publication of JP2006013480A5 publication Critical patent/JP2006013480A5/ja
Application granted granted Critical
Publication of JP5089027B2 publication Critical patent/JP5089027B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005154536A 2004-05-28 2005-05-26 半導体装置 Expired - Fee Related JP5089027B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005154536A JP5089027B2 (ja) 2004-05-28 2005-05-26 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004159939 2004-05-28
JP2004159939 2004-05-28
JP2005154536A JP5089027B2 (ja) 2004-05-28 2005-05-26 半導体装置

Publications (3)

Publication Number Publication Date
JP2006013480A JP2006013480A (ja) 2006-01-12
JP2006013480A5 true JP2006013480A5 (enrdf_load_stackoverflow) 2008-07-10
JP5089027B2 JP5089027B2 (ja) 2012-12-05

Family

ID=35780280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005154536A Expired - Fee Related JP5089027B2 (ja) 2004-05-28 2005-05-26 半導体装置

Country Status (1)

Country Link
JP (1) JP5089027B2 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7851788B2 (en) * 2006-02-28 2010-12-14 Pioneer Corporation Organic transistor and manufacturing method thereof
JPWO2007099689A1 (ja) * 2006-02-28 2009-07-16 パイオニア株式会社 有機トランジスタ及びその製造方法
US7678701B2 (en) * 2006-07-31 2010-03-16 Eastman Kodak Company Flexible substrate with electronic devices formed thereon
JP5205894B2 (ja) * 2007-09-21 2013-06-05 大日本印刷株式会社 有機半導体素子、有機半導体素子の製造方法、有機トランジスタアレイ、およびディスプレイ
JP5489429B2 (ja) * 2008-07-09 2014-05-14 富士フイルム株式会社 薄膜電界効果型トランジスタ
EP2172804B1 (en) * 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
KR102775255B1 (ko) 2009-09-04 2025-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
JP5886491B2 (ja) * 2010-11-12 2016-03-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102238180B1 (ko) 2014-08-05 2021-04-08 엘지디스플레이 주식회사 플렉서블 표시장치 및 그 제조방법
JP7083396B2 (ja) * 2018-09-03 2022-06-10 富士フイルム株式会社 有機薄膜トランジスタ、および、有機薄膜トランジスタの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6018152B2 (ja) * 1976-04-23 1985-05-09 工業技術院長 太陽電池装置の作製方法
JP3047246B2 (ja) * 1990-09-26 2000-05-29 株式会社リコー Ｄｒａｍバッテリバックアップ方法
JP4094179B2 (ja) * 1998-08-21 2008-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3787839B2 (ja) * 2002-04-22 2006-06-21 セイコーエプソン株式会社 デバイスの製造方法、デバイス及び電子機器
JP4490650B2 (ja) * 2002-04-26 2010-06-30 東芝モバイルディスプレイ株式会社 Ｅｌ表示装置の駆動方法、およびｅｌ表示装置

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