JP5087581B2 - リソグラフィ装置 - Google Patents

リソグラフィ装置 Download PDF

Info

Publication number
JP5087581B2
JP5087581B2 JP2009094473A JP2009094473A JP5087581B2 JP 5087581 B2 JP5087581 B2 JP 5087581B2 JP 2009094473 A JP2009094473 A JP 2009094473A JP 2009094473 A JP2009094473 A JP 2009094473A JP 5087581 B2 JP5087581 B2 JP 5087581B2
Authority
JP
Japan
Prior art keywords
substrate
plate
liquid
lithographic apparatus
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009094473A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009260343A (ja
Inventor
デン ダンゲン，クレメンス，ヨハネス，ゲラルドス ヴァン
コペラーズ，ニコラース，フランシスカス
リーンダース，マルチヌス，ヘンドリカス，アントニアス
リーブレッツ，パウルス，マルティヌス，マリア
マルケンス，ヨハネス，キャサリヌス，ハーバータス
エウメレン，エリック，ヘンリカス，エギディウス，キャサリナ
ベッカーズ，マルセル
ムルマン，リシャルト
グラウストラ，セドリック，デジレ
フィリップス，ダニー，マリア，ヒューベルタス
ヴェルヘーズ，レムコ，ヤン，ピーター
ムルダー，ピエター
ヴィエト，エヴェルト ヴァン
Original Assignee
エーエスエムエル ネザーランズ ビー．ブイ．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エーエスエムエル ネザーランズ ビー．ブイ． filed Critical エーエスエムエル ネザーランズ ビー．ブイ．
Publication of JP2009260343A publication Critical patent/JP2009260343A/ja
Application granted granted Critical
Publication of JP5087581B2 publication Critical patent/JP5087581B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2009094473A 2008-04-16 2009-04-09 リソグラフィ装置 Active JP5087581B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7116108P 2008-04-16 2008-04-16
US61/071,161 2008-04-16

Publications (2)

Publication Number Publication Date
JP2009260343A JP2009260343A (ja) 2009-11-05
JP5087581B2 true JP5087581B2 (ja) 2012-12-05

Family

ID=41200843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009094473A Active JP5087581B2 (ja) 2008-04-16 2009-04-09 リソグラフィ装置

Country Status (5)

Country Link
US (3) US9036127B2 (zh)
JP (1) JP5087581B2 (zh)
CN (3) CN102226869B (zh)
NL (1) NL1036715A1 (zh)
TW (1) TWI452439B (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009267235A (ja) * 2008-04-28 2009-11-12 Canon Inc 露光装置
US8477284B2 (en) * 2008-10-22 2013-07-02 Nikon Corporation Apparatus and method to control vacuum at porous material using multiple porous materials
US8634055B2 (en) * 2008-10-22 2014-01-21 Nikon Corporation Apparatus and method to control vacuum at porous material using multiple porous materials
EP2221669A3 (en) 2009-02-19 2011-02-09 ASML Netherlands B.V. A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method
EP2264529A3 (en) * 2009-06-16 2011-02-09 ASML Netherlands B.V. A lithographic apparatus, a method of controlling the apparatus and a method of manufacturing a device using a lithographic apparatus
NL2006076A (en) * 2010-03-04 2011-09-06 Asml Netherlands Bv A lithographic apparatus and a method of manufacturing a device using a lithographic apparatus.
NL2006818A (en) 2010-07-02 2012-01-03 Asml Netherlands Bv A method of adjusting speed and/or routing of a table movement plan and a lithographic apparatus.
EP2423749B1 (en) 2010-08-24 2013-09-11 ASML Netherlands BV A lithographic apparatus and device manufacturing method
NL2007477A (en) 2010-10-22 2012-04-24 Asml Netherlands Bv Method of optimizing a lithographic process, device manufacturing method, lithographic apparatus, computer program product and simulation apparatus.
NL2007633A (en) 2010-11-22 2012-05-23 Asml Netherlands Bv A positioning system, a lithographic apparatus and a method for positional control.
NL2007768A (en) 2010-12-14 2012-06-18 Asml Netherlands Bv Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder.
EP2490073B1 (en) 2011-02-18 2015-09-23 ASML Netherlands BV Substrate holder, lithographic apparatus, and method of manufacturing a substrate holder
NL2008183A (en) 2011-02-25 2012-08-28 Asml Netherlands Bv A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method.
NL2008630A (en) 2011-04-27 2012-10-30 Asml Netherlands Bv Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder.
NL2009487A (en) 2011-10-14 2013-04-16 Asml Netherlands Bv Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder.
NL2009858A (en) 2011-12-27 2013-07-01 Asml Netherlands Bv Substrate holder, lithographic apparatus, and device manufacturing method.
JP5957540B2 (ja) 2012-02-03 2016-07-27 エーエスエムエル ネザーランズ ビー．ブイ． 基板ホルダ製造方法
CN104350423A (zh) 2012-04-19 2015-02-11 Asml荷兰有限公司 衬底保持装置、光刻设备以及器件制造方法
NL2010527A (en) 2013-03-27 2014-09-30 Asml Netherlands Bv Object holder, lithographic apparatus, device manufacturing method, and method of manufacturing an object holder.
US11156921B2 (en) * 2017-12-15 2021-10-26 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus, and method of using a fluid handling structure
CN113508340A (zh) 2019-03-01 2021-10-15 Asml荷兰有限公司 包括静电夹具的物体保持器

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
JPH09108551A (ja) * 1995-08-11 1997-04-28 Mitsubishi Rayon Co Ltd 浄水器
JP3609179B2 (ja) * 1995-10-25 2005-01-12 大日本スクリーン製造株式会社 基板の熱処理方法及び装置
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2001239187A (ja) * 1999-09-10 2001-09-04 Sigma Meltec Ltd 液体供給ノズルと処理方法
JP4043831B2 (ja) * 2002-04-24 2008-02-06 東京エレクトロン株式会社 熱処理装置
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1420300B1 (en) 2002-11-12 2015-07-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
SG2010050110A (en) * 2002-11-12 2014-06-27 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP2945016B1 (en) * 2003-02-26 2017-09-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
EP1524558A1 (en) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) * 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
JP2005166999A (ja) * 2003-12-03 2005-06-23 Tokyo Electron Ltd 基板の処理方法及び基板の露光時の露光量又は焦点位置の変動による基板の処理への影響を低減する方法
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101162938B1 (ko) * 2004-04-19 2012-07-05 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7397533B2 (en) * 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124359A1 (en) * 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TW200644079A (en) * 2005-03-31 2006-12-16 Nikon Corp Exposure apparatus, exposure method, and device production method
US7411654B2 (en) * 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100541719C (zh) 2005-04-25 2009-09-16 株式会社尼康 曝光方法和曝光装置、以及器件制造方法
US7474379B2 (en) * 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TW200707124A (en) * 2005-06-29 2007-02-16 Nikon Corp Exposure apparatus, substrate processing method, and device producing method
US7411658B2 (en) * 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JPWO2007055373A1 (ja) * 2005-11-14 2009-04-30 株式会社ニコン 液体回収部材、露光装置、露光方法、及びデバイス製造方法
US7804577B2 (en) * 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
JP4567651B2 (ja) * 2005-11-16 2010-10-20 エーエスエムエル ネザーランズ ビー．ブイ． 露光装置及びデバイス製造方法
JP2007194484A (ja) * 2006-01-20 2007-08-02 Toshiba Corp 液浸露光方法
US7701551B2 (en) * 2006-04-14 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8634053B2 (en) * 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100462848C (zh) 2007-03-15 2009-02-18 浙江大学 浸没式光刻系统中的液体供给及回收的密封控制装置
NL1036579A1 (nl) 2008-02-19 2009-08-20 Asml Netherlands Bv Lithographic apparatus and methods.

Also Published As

Publication number Publication date
US20150234294A1 (en) 2015-08-20
US20090262318A1 (en) 2009-10-22
CN102226869A (zh) 2011-10-26
CN102221790A (zh) 2011-10-19
CN102226869B (zh) 2013-08-28
US10649341B2 (en) 2020-05-12
CN101561639A (zh) 2009-10-21
US9465302B2 (en) 2016-10-11
JP2009260343A (ja) 2009-11-05
TWI452439B (zh) 2014-09-11
US9036127B2 (en) 2015-05-19
CN101561639B (zh) 2011-08-03
US20170023870A1 (en) 2017-01-26
TW200947146A (en) 2009-11-16
NL1036715A1 (nl) 2009-10-19
CN102221790B (zh) 2013-11-20

Similar Documents

Publication Publication Date Title
JP5087581B2 (ja) リソグラフィ装置
JP5222991B2 (ja) 流体ハンドリング構造、リソグラフィ装置及びデバイス製造方法
JP5731680B2 (ja) 流体ハンドリング構造及び方法、並びにリソグラフィ装置
JP5576537B2 (ja) リソグラフィ装置およびデバイス製造方法
TWI486718B (zh) 微影裝置
JP4848003B2 (ja) 傾斜したシャワーヘッドを備える液浸リソグラフィシステムおよび液浸リソグラフィ方法
JP5063641B2 (ja) 液浸リソグラフィ装置、乾燥デバイス、液浸メトロロジー装置及びデバイス製造方法
TWI424282B (zh) 微影裝置及元件製造方法
TWI443477B (zh) 微影裝置及使用其製造元件之方法
JP5065432B2 (ja) 流体ハンドリングデバイス、液浸リソグラフィ装置及びデバイス製造方法
JP2007013151A (ja) リソグラフィ装置及びデバイス製造方法
JP5270700B2 (ja) 流体ハンドリング構造、リソグラフィ装置およびデバイス製造方法
JP2008078648A (ja) リソグラフィ装置およびデバイス製造方法
JP5270701B2 (ja) リソグラフィ装置およびデバイス製造方法
JP2009231838A (ja) 液浸リソグラフィ装置及びデバイス製造方法
JP5237322B2 (ja) リソグラフィ装置
JP2011061199A (ja) シャッター部材、リソグラフィ装置及びデバイス製造方法
JP5547755B2 (ja) 液浸リソグラフィ装置及びデバイス製造方法
JP2010147466A (ja) 流体ハンドリング構造、テーブル、リソグラフィ装置、液浸リソグラフィ装置、及びデバイス製造方法
JP2009141359A (ja) リソグラフィ装置及びデバイス製造方法
JP5503938B2 (ja) 液浸リソグラフィ装置
KR101160948B1 (ko) 리소그래피 장치

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090409

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110708

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110712

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111011

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120814

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120910

R150 Certificate of patent or registration of utility model

Ref document number: 5087581

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150914

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250