JP5085974B2 - 蛍光基板及び半導体発光装置 - Google Patents

蛍光基板及び半導体発光装置 Download PDF

Info

Publication number
JP5085974B2
JP5085974B2 JP2007117424A JP2007117424A JP5085974B2 JP 5085974 B2 JP5085974 B2 JP 5085974B2 JP 2007117424 A JP2007117424 A JP 2007117424A JP 2007117424 A JP2007117424 A JP 2007117424A JP 5085974 B2 JP5085974 B2 JP 5085974B2
Authority
JP
Japan
Prior art keywords
concentration
nitrogen
acceptor
boron
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007117424A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008277447A5 (enrdf_load_stackoverflow
JP2008277447A (ja
Inventor
智 上山
勇 赤▲崎▼
浩 天野
素顕 岩谷
州吾 新田
博之 木下
章 岩山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EL Seed Corp
Original Assignee
EL Seed Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EL Seed Corp filed Critical EL Seed Corp
Priority to JP2007117424A priority Critical patent/JP5085974B2/ja
Publication of JP2008277447A publication Critical patent/JP2008277447A/ja
Publication of JP2008277447A5 publication Critical patent/JP2008277447A5/ja
Application granted granted Critical
Publication of JP5085974B2 publication Critical patent/JP5085974B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Luminescent Compositions (AREA)
  • Led Devices (AREA)
JP2007117424A 2007-04-26 2007-04-26 蛍光基板及び半導体発光装置 Expired - Fee Related JP5085974B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007117424A JP5085974B2 (ja) 2007-04-26 2007-04-26 蛍光基板及び半導体発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007117424A JP5085974B2 (ja) 2007-04-26 2007-04-26 蛍光基板及び半導体発光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012196196A Division JP2013021350A (ja) 2012-09-06 2012-09-06 蛍光基板及び半導体発光装置

Publications (3)

Publication Number Publication Date
JP2008277447A JP2008277447A (ja) 2008-11-13
JP2008277447A5 JP2008277447A5 (enrdf_load_stackoverflow) 2010-06-17
JP5085974B2 true JP5085974B2 (ja) 2012-11-28

Family

ID=40055083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007117424A Expired - Fee Related JP5085974B2 (ja) 2007-04-26 2007-04-26 蛍光基板及び半導体発光装置

Country Status (1)

Country Link
JP (1) JP5085974B2 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4991834B2 (ja) 2009-12-17 2012-08-01 シャープ株式会社 車両用前照灯
JP5232815B2 (ja) 2010-02-10 2013-07-10 シャープ株式会社 車両用前照灯
JP2011243369A (ja) * 2010-05-17 2011-12-01 Sharp Corp 発光装置、照明装置および車両用前照灯
US8733996B2 (en) 2010-05-17 2014-05-27 Sharp Kabushiki Kaisha Light emitting device, illuminating device, and vehicle headlamp
US9816677B2 (en) 2010-10-29 2017-11-14 Sharp Kabushiki Kaisha Light emitting device, vehicle headlamp, illumination device, and laser element
JP5219230B1 (ja) * 2012-09-04 2013-06-26 エルシード株式会社 ＳｉＣ蛍光材料及びその製造方法並びに発光素子
JP5521242B1 (ja) * 2013-06-08 2014-06-11 エルシード株式会社 ＳｉＣ材料の製造方法及びＳｉＣ材料積層体
KR102252992B1 (ko) 2014-12-12 2021-05-20 삼성전자주식회사 반도체 발광소자 패키지의 제조 방법
WO2016098853A1 (ja) * 2014-12-19 2016-06-23 エルシード株式会社 発光素子
CN105226150A (zh) * 2015-10-10 2016-01-06 山东大学 一种N-B双掺SiC衬底的GaN基无荧光粉的高效白光LED结构及其制备方法和应用

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645647A (ja) * 1991-12-04 1994-02-18 Sharp Corp ｐｎ接合型発光ダイオード
JPH05304314A (ja) * 1992-04-27 1993-11-16 Toshiba Corp 発光ダイオード
JP4403629B2 (ja) * 2000-04-06 2010-01-27 株式会社デンソー 半導体発光装置
JP4153455B2 (ja) * 2003-11-28 2008-09-24 学校法人 名城大学 蛍光体および発光ダイオード

Also Published As

Publication number Publication date
JP2008277447A (ja) 2008-11-13

Similar Documents

Publication Publication Date Title
JP5085974B2 (ja) 蛍光基板及び半導体発光装置
JP4653671B2 (ja) 発光装置
JP4857310B2 (ja) 半導体発光素子及びその製造方法
US7855385B2 (en) SiC crystal and semiconductor device
US20070228931A1 (en) White light emitting device
CN1585144B (zh) 紫外发光元件
US20070114560A1 (en) Semiconductor and method of semiconductor fabrication
JP2005268770A (ja) 白色発光素子及び白色光源
JP5521242B1 (ja) ＳｉＣ材料の製造方法及びＳｉＣ材料積層体
JP2009212308A (ja) 発光ダイオード
JP2007109885A (ja) 半導体発光装置及びその製造方法
JP6231005B2 (ja) ＳｉＣ蛍光材料及びその製造方法並びに発光素子
JP5774900B2 (ja) 発光ダイオード素子及びその製造方法
KR101188279B1 (ko) 희생층을 포함하는 수직형 질화물계 발광 다이오드
JP5330880B2 (ja) 発光ダイオード素子及びその製造方法
WO2011101929A1 (ja) 半導体発光装置及びその製造方法
JP5060823B2 (ja) 半導体発光素子
JP2013021350A (ja) 蛍光基板及び半導体発光装置
JP2005317823A (ja) 窒化ガリウム系発光装置
US10475966B2 (en) Lighting emitting apparatus
JP5537326B2 (ja) 発光ダイオード素子及びその製造方法並びに単結晶ＳｉＣ材料及びその製造方法
JP2017017144A (ja) 窒化物半導体発光素子
JP4864940B2 (ja) 白色光源
WO2014203974A1 (ja) 発光装置
JP2005129684A (ja) 半導体発光素子

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100422

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100422

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111228

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120124

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120321

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120807

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120906

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150914

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees