JP5076020B2 - ＳｉＣエピタキシャルウェハ - Google Patents

ＳｉＣエピタキシャルウェハ Download PDF

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Publication number
JP5076020B2
JP5076020B2 JP2011233966A JP2011233966A JP5076020B2 JP 5076020 B2 JP5076020 B2 JP 5076020B2 JP 2011233966 A JP2011233966 A JP 2011233966A JP 2011233966 A JP2011233966 A JP 2011233966A JP 5076020 B2 JP5076020 B2 JP 5076020B2
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Prior art keywords
sic
sic epitaxial
gas
wafer
growth
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Japanese (ja)
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JP2012051795A (ja
JP2012051795A5 (enExample
Inventor
大祐 武藤
賢治 百瀬
道哉 小田原
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Resonac Holdings Corp
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Showa Denko KK
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Priority to JP2011233966A priority Critical patent/JP5076020B2/ja
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2011233966A 2011-10-25 2011-10-25 ＳｉＣエピタキシャルウェハ Active JP5076020B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011233966A JP5076020B2 (ja) 2011-10-25 2011-10-25 ＳｉＣエピタキシャルウェハ

Applications Claiming Priority (1)

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JP2011233966A JP5076020B2 (ja) 2011-10-25 2011-10-25 ＳｉＣエピタキシャルウェハ

Related Parent Applications (1)

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JP2009283113A Division JP4887418B2 (ja) 2009-12-14 2009-12-14 ＳｉＣエピタキシャルウェハの製造方法

Publications (3)

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JP2012051795A JP2012051795A (ja) 2012-03-15
JP2012051795A5 JP2012051795A5 (enExample) 2012-05-24
JP5076020B2 true JP5076020B2 (ja) 2012-11-21

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JP2011233966A Active JP5076020B2 (ja) 2011-10-25 2011-10-25 ＳｉＣエピタキシャルウェハ

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Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5897834B2 (ja) 2011-07-19 2016-03-30 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
KR101926694B1 (ko) * 2012-05-30 2018-12-07 엘지이노텍 주식회사 탄화규소 에피 웨이퍼 및 이의 제조 방법
KR101897062B1 (ko) * 2012-05-31 2018-09-12 엘지이노텍 주식회사 탄화규소 에피 웨이퍼 및 이의 제조 방법
KR101926678B1 (ko) * 2012-05-31 2018-12-11 엘지이노텍 주식회사 탄화규소 에피 웨이퍼 및 이의 제조 방법
JP6037671B2 (ja) * 2012-06-19 2016-12-07 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
KR102131245B1 (ko) * 2013-06-28 2020-08-05 엘지이노텍 주식회사 에피택셜 웨이퍼
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
JP6122704B2 (ja) * 2013-06-13 2017-04-26 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
KR102165615B1 (ko) * 2013-06-24 2020-10-14 엘지이노텍 주식회사 에피택셜 웨이퍼
JP6136772B2 (ja) * 2013-08-30 2017-05-31 株式会社デンソー 炭化珪素単結晶の製造方法
JP6315579B2 (ja) 2014-07-28 2018-04-25 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
WO2017090285A1 (ja) * 2015-11-24 2017-06-01 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6762484B2 (ja) * 2017-01-10 2020-09-30 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
US10964785B2 (en) * 2017-05-17 2021-03-30 Mitsubishi Electric Corporation SiC epitaxial wafer and manufacturing method of the same
JP7125252B2 (ja) * 2017-08-30 2022-08-24 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
JP7239432B2 (ja) * 2019-09-27 2023-03-14 東海カーボン株式会社 多結晶ＳｉＣ成形体の製造方法
JP7610934B2 (ja) * 2020-07-21 2025-01-09 三菱電機株式会社 炭化珪素エピタキシャルウエハの製造方法
JP7083139B1 (ja) * 2021-08-06 2022-06-10 株式会社タムラ製作所 半導体基板、半導体ウエハ、及び半導体ウエハの製造方法
JP2025078072A (ja) * 2023-11-07 2025-05-19 株式会社レゾナック ＳｉＣエピタキシャルウェハ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5285202B2 (ja) * 2004-03-26 2013-09-11 一般財団法人電力中央研究所 バイポーラ型半導体装置およびその製造方法
JP2007182330A (ja) * 2004-08-24 2007-07-19 Bridgestone Corp 炭化ケイ素単結晶ウェハ及びその製造方法
JP2006321707A (ja) * 2005-04-22 2006-11-30 Bridgestone Corp 炭化ケイ素単結晶ウェハ及びその製造方法
JP4946202B2 (ja) * 2006-06-26 2012-06-06 日立金属株式会社 炭化珪素半導体エピタキシャル基板の製造方法。
JP4523935B2 (ja) * 2006-12-27 2010-08-11 昭和電工株式会社 炭化珪素単結晶基板の研磨用水系研磨スラリー及び研磨法。
CN101802273B (zh) * 2007-09-12 2013-04-17 昭和电工株式会社 外延SiC单晶衬底及外延SiC单晶衬底的制造方法
JP4959763B2 (ja) * 2009-08-28 2012-06-27 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法

Also Published As

Publication number Publication date
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