JP5076020B2 - ＳｉＣエピタキシャルウェハ - Google Patents
ＳｉＣエピタキシャルウェハ Download PDFInfo
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- JP5076020B2 JP5076020B2 JP2011233966A JP2011233966A JP5076020B2 JP 5076020 B2 JP5076020 B2 JP 5076020B2 JP 2011233966 A JP2011233966 A JP 2011233966A JP 2011233966 A JP2011233966 A JP 2011233966A JP 5076020 B2 JP5076020 B2 JP 5076020B2
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- sic
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- 239000000758 substrate Substances 0.000 claims description 121
- 239000013078 crystal Substances 0.000 claims description 81
- 230000007547 defect Effects 0.000 claims description 70
- 238000009826 distribution Methods 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 description 248
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 219
- 235000012431 wafers Nutrition 0.000 description 148
- 239000007789 gas Substances 0.000 description 124
- 238000005498 polishing Methods 0.000 description 43
- 238000005530 etching Methods 0.000 description 40
- 238000000034 method Methods 0.000 description 35
- 238000007689 inspection Methods 0.000 description 34
- 230000003287 optical effect Effects 0.000 description 33
- 239000002245 particle Substances 0.000 description 21
- 230000008569 process Effects 0.000 description 20
- 238000005424 photoluminescence Methods 0.000 description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 17
- 238000000089 atomic force micrograph Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000000523 sample Substances 0.000 description 13
- 238000005259 measurement Methods 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 239000002002 slurry Substances 0.000 description 12
- 238000003384 imaging method Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 9
- 238000013461 design Methods 0.000 description 9
- 238000007517 polishing process Methods 0.000 description 9
- 230000009467 reduction Effects 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 238000003917 TEM image Methods 0.000 description 6
- 239000006061 abrasive grain Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- 230000009102 absorption Effects 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 150000007522 mineralic acids Chemical class 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- 239000003349 gelling agent Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 231100000691 up-and-down procedure Toxicity 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011233966A JP5076020B2 (ja) | 2011-10-25 | 2011-10-25 | ＳｉＣエピタキシャルウェハ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011233966A JP5076020B2 (ja) | 2011-10-25 | 2011-10-25 | ＳｉＣエピタキシャルウェハ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009283113A Division JP4887418B2 (ja) | 2009-12-14 | 2009-12-14 | ＳｉＣエピタキシャルウェハの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012051795A JP2012051795A (ja) | 2012-03-15 |
| JP2012051795A5 JP2012051795A5 (enExample) | 2012-05-24 |
| JP5076020B2 true JP5076020B2 (ja) | 2012-11-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011233966A Active JP5076020B2 (ja) | 2011-10-25 | 2011-10-25 | ＳｉＣエピタキシャルウェハ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5076020B2 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5897834B2 (ja) * | 2011-07-19 | 2016-03-30 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハの製造方法 |
| KR101926694B1 (ko) * | 2012-05-30 | 2018-12-07 | 엘지이노텍 주식회사 | 탄화규소 에피 웨이퍼 및 이의 제조 방법 |
| KR101926678B1 (ko) * | 2012-05-31 | 2018-12-11 | 엘지이노텍 주식회사 | 탄화규소 에피 웨이퍼 및 이의 제조 방법 |
| KR101897062B1 (ko) | 2012-05-31 | 2018-09-12 | 엘지이노텍 주식회사 | 탄화규소 에피 웨이퍼 및 이의 제조 방법 |
| JP6037671B2 (ja) | 2012-06-19 | 2016-12-07 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法 |
| US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
| US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
| KR102131245B1 (ko) * | 2013-06-28 | 2020-08-05 | 엘지이노텍 주식회사 | 에피택셜 웨이퍼 |
| US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
| US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
| JP6122704B2 (ja) * | 2013-06-13 | 2017-04-26 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法 |
| KR102165615B1 (ko) * | 2013-06-24 | 2020-10-14 | 엘지이노텍 주식회사 | 에피택셜 웨이퍼 |
| JP6136772B2 (ja) * | 2013-08-30 | 2017-05-31 | 株式会社デンソー | 炭化珪素単結晶の製造方法 |
| JP6315579B2 (ja) | 2014-07-28 | 2018-04-25 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハの製造方法 |
| US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
| US10490634B2 (en) * | 2015-11-24 | 2019-11-26 | Sumitomo Electric Industries, Ltd. | Silicon carbide epitaxial substrate having a silicon carbide layer and method of manufacturing silicon carbide semiconductor device |
| JP6762484B2 (ja) * | 2017-01-10 | 2020-09-30 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法 |
| US10964785B2 (en) * | 2017-05-17 | 2021-03-30 | Mitsubishi Electric Corporation | SiC epitaxial wafer and manufacturing method of the same |
| JP7125252B2 (ja) * | 2017-08-30 | 2022-08-24 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法 |
| JP7239432B2 (ja) * | 2019-09-27 | 2023-03-14 | 東海カーボン株式会社 | 多結晶ＳｉＣ成形体の製造方法 |
| JP7610934B2 (ja) * | 2020-07-21 | 2025-01-09 | 三菱電機株式会社 | 炭化珪素エピタキシャルウエハの製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5285202B2 (ja) * | 2004-03-26 | 2013-09-11 | 一般財団法人電力中央研究所 | バイポーラ型半導体装置およびその製造方法 |
| JP2007182330A (ja) * | 2004-08-24 | 2007-07-19 | Bridgestone Corp | 炭化ケイ素単結晶ウェハ及びその製造方法 |
| JP2006321707A (ja) * | 2005-04-22 | 2006-11-30 | Bridgestone Corp | 炭化ケイ素単結晶ウェハ及びその製造方法 |
| JP4946202B2 (ja) * | 2006-06-26 | 2012-06-06 | 日立金属株式会社 | 炭化珪素半導体エピタキシャル基板の製造方法。 |
| JP4523935B2 (ja) * | 2006-12-27 | 2010-08-11 | 昭和電工株式会社 | 炭化珪素単結晶基板の研磨用水系研磨スラリー及び研磨法。 |
| TWI408262B (zh) * | 2007-09-12 | 2013-09-11 | Showa Denko Kk | 磊晶ＳｉＣ單晶基板及磊晶ＳｉＣ單晶基板之製造方法 |
| JP4959763B2 (ja) * | 2009-08-28 | 2012-06-27 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法 |
-
2011
- 2011-10-25 JP JP2011233966A patent/JP5076020B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012051795A (ja) | 2012-03-15 |
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