JP5072197B2 - レーザ照射装置およびレーザ照射方法 - Google Patents

レーザ照射装置およびレーザ照射方法 Download PDF

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JP5072197B2
JP5072197B2 JP2005173715A JP2005173715A JP5072197B2 JP 5072197 B2 JP5072197 B2 JP 5072197B2 JP 2005173715 A JP2005173715 A JP 2005173715A JP 2005173715 A JP2005173715 A JP 2005173715A JP 5072197 B2 JP5072197 B2 JP 5072197B2
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laser
path
irradiation apparatus
irradiation
semiconductor film
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JP2006032928A5 (enExample
JP2006032928A (ja
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幸一郎 田中
良明 山本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
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    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
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  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2005173715A 2004-06-18 2005-06-14 レーザ照射装置およびレーザ照射方法 Expired - Fee Related JP5072197B2 (ja)

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JP2004180790 2004-06-18
JP2005173715A JP5072197B2 (ja) 2004-06-18 2005-06-14 レーザ照射装置およびレーザ照射方法

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JP2006032928A5 JP2006032928A5 (enExample) 2008-07-10
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US (1) US7566669B2 (enExample)
JP (1) JP5072197B2 (enExample)
KR (1) KR101127890B1 (enExample)
CN (2) CN101599427B (enExample)
WO (1) WO2005124841A1 (enExample)

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US7282735B2 (en) * 2005-03-31 2007-10-16 Xerox Corporation TFT having a fluorocarbon-containing layer
WO2006118312A1 (en) 2005-05-02 2006-11-09 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and laser irradiation method
DK2179737T3 (da) * 2005-07-01 2013-11-11 Index Pharmaceuticals Ab Modulering af respons på steroider
WO2007067541A2 (en) * 2005-12-05 2007-06-14 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
EP2130234B1 (en) * 2007-02-27 2014-10-29 Carl Zeiss Laser Optics GmbH Continuous coating installation and method for producing crystalline thin films
JP5581563B2 (ja) * 2007-03-08 2014-09-03 株式会社日立製作所 照明装置並びにそれを用いた欠陥検査装置及びその方法並びに高さ計測装置及びその方法
US7820531B2 (en) 2007-10-15 2010-10-26 Sony Corporation Method of manufacturing semiconductor device, method of manufacturing display apparatus, apparatus of manufacturing semiconductor device, and display apparatus
JP2011071261A (ja) * 2009-09-25 2011-04-07 Ushio Inc レーザーアニール装置
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US20120225568A1 (en) * 2011-03-03 2012-09-06 Tokyo Electron Limited Annealing method and annealing apparatus
JPWO2012164626A1 (ja) * 2011-06-02 2014-07-31 パナソニック株式会社 薄膜半導体装置の製造方法、薄膜半導体アレイ基板の製造方法、結晶性シリコン薄膜の形成方法、及び結晶性シリコン薄膜の形成装置
JP5861494B2 (ja) * 2012-02-23 2016-02-16 三菱マテリアル株式会社 レーザ加工装置およびレーザ加工方法
JP2013193110A (ja) * 2012-03-21 2013-09-30 Sumitomo Heavy Ind Ltd レーザ加工装置及びレーザ加工方法
CN102922142A (zh) * 2012-10-30 2013-02-13 张立国 一种激光加工的方法
JP5725518B2 (ja) * 2013-04-17 2015-05-27 株式会社日本製鋼所 レーザ光遮蔽部材、レーザ処理装置およびレーザ光照射方法
EP3164885B1 (en) * 2014-07-03 2021-08-25 IPG Photonics Corporation Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser
KR102582652B1 (ko) * 2016-12-21 2023-09-25 삼성디스플레이 주식회사 레이저 결정화 장치
JP6556812B2 (ja) * 2017-11-28 2019-08-07 Ｎｉｓｓｈａ株式会社 ハードコート付フィルムタイプタッチセンサとこれを用いたフレキシブルディバイス
CN110091078A (zh) * 2019-05-31 2019-08-06 华中科技大学 一种用于玻璃的三维柱状孔激光切割方法
JP2021111725A (ja) 2020-01-14 2021-08-02 株式会社ブイ・テクノロジー レーザアニール装置及びレーザアニール方法
CN114078695A (zh) * 2020-08-10 2022-02-22 中芯南方集成电路制造有限公司 一种退火方法
JP2023011329A (ja) * 2021-07-12 2023-01-24 住友重機械工業株式会社 アニール装置の制御装置、アニール装置、及びアニール方法
CN114054971B (zh) * 2022-01-10 2022-07-12 武汉华工激光工程有限责任公司 一种自动实时gv值检测及补偿的方法和系统

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CN101599427B (zh) 2012-05-30
KR20070047275A (ko) 2007-05-04
CN1969377A (zh) 2007-05-23
US20070148834A1 (en) 2007-06-28
CN101599427A (zh) 2009-12-09
CN100524629C (zh) 2009-08-05
WO2005124841A1 (en) 2005-12-29
US7566669B2 (en) 2009-07-28
KR101127890B1 (ko) 2012-06-12
JP2006032928A (ja) 2006-02-02

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