KR101127890B1 - 레이저 조사장치 및 레이저 조사방법 - Google Patents

레이저 조사장치 및 레이저 조사방법 Download PDF

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KR101127890B1
KR101127890B1 KR1020077000099A KR20077000099A KR101127890B1 KR 101127890 B1 KR101127890 B1 KR 101127890B1 KR 1020077000099 A KR1020077000099 A KR 1020077000099A KR 20077000099 A KR20077000099 A KR 20077000099A KR 101127890 B1 KR101127890 B1 KR 101127890B1
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KR20070047275A (ko
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코이치로 타나카
요시아키 야마모토
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
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    • H01L21/02425—Conductive materials, e.g. metallic silicides
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
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    • H01L21/02367—Substrates
    • H01L21/0237—Materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
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    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
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  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
KR1020077000099A 2004-06-18 2005-06-15 레이저 조사장치 및 레이저 조사방법 Expired - Fee Related KR101127890B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00180790 2004-06-18
JP2004180790 2004-06-18
PCT/JP2005/011397 WO2005124841A1 (en) 2004-06-18 2005-06-15 Laser irradiation apparatus and laser irradiation method

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KR20070047275A KR20070047275A (ko) 2007-05-04
KR101127890B1 true KR101127890B1 (ko) 2012-06-12

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US (1) US7566669B2 (enExample)
JP (1) JP5072197B2 (enExample)
KR (1) KR101127890B1 (enExample)
CN (2) CN100524629C (enExample)
WO (1) WO2005124841A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101677061B (zh) * 2004-03-26 2013-04-03 株式会社半导体能源研究所 激光辐照方法和激光辐照装置
US7282735B2 (en) * 2005-03-31 2007-10-16 Xerox Corporation TFT having a fluorocarbon-containing layer
KR101284201B1 (ko) 2005-05-02 2013-07-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 조사 장치 및 레이저 조사 방법
US8148341B2 (en) * 2005-07-01 2012-04-03 Index Pharmaceuticals Ab Method for modulating responsiveness to steroids
KR101287314B1 (ko) * 2005-12-05 2013-07-17 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 막 처리 시스템과 방법, 및 박막
CN101622722B (zh) * 2007-02-27 2012-11-21 卡尔蔡司激光器材有限责任公司 连续涂覆设备、生产晶态薄膜和太阳电池的方法
JP5581563B2 (ja) * 2007-03-08 2014-09-03 株式会社日立製作所 照明装置並びにそれを用いた欠陥検査装置及びその方法並びに高さ計測装置及びその方法
US7820531B2 (en) 2007-10-15 2010-10-26 Sony Corporation Method of manufacturing semiconductor device, method of manufacturing display apparatus, apparatus of manufacturing semiconductor device, and display apparatus
JP2011071261A (ja) * 2009-09-25 2011-04-07 Ushio Inc レーザーアニール装置
KR20110114972A (ko) * 2010-04-14 2011-10-20 삼성전자주식회사 레이저 빔을 이용한 기판의 가공 방법
US20120225568A1 (en) * 2011-03-03 2012-09-06 Tokyo Electron Limited Annealing method and annealing apparatus
KR20140018081A (ko) * 2011-06-02 2014-02-12 파나소닉 주식회사 박막 반도체 장치의 제조 방법, 박막 반도체 어레이 기판의 제조 방법, 결정성 실리콘 박막의 형성 방법, 및 결정성 실리콘 박막의 형성 장치
JP5861494B2 (ja) * 2012-02-23 2016-02-16 三菱マテリアル株式会社 レーザ加工装置およびレーザ加工方法
JP2013193110A (ja) * 2012-03-21 2013-09-30 Sumitomo Heavy Ind Ltd レーザ加工装置及びレーザ加工方法
CN102922142A (zh) * 2012-10-30 2013-02-13 张立国 一种激光加工的方法
JP5725518B2 (ja) * 2013-04-17 2015-05-27 株式会社日本製鋼所 レーザ光遮蔽部材、レーザ処理装置およびレーザ光照射方法
KR102439093B1 (ko) * 2014-07-03 2022-08-31 아이피지 포토닉스 코포레이션 광섬유 레이저에 의해 비정질 규소 기재를 균일하게 재결정화하기 위한 방법 및 시스템
KR102582652B1 (ko) * 2016-12-21 2023-09-25 삼성디스플레이 주식회사 레이저 결정화 장치
JP6556812B2 (ja) * 2017-11-28 2019-08-07 Ｎｉｓｓｈａ株式会社 ハードコート付フィルムタイプタッチセンサとこれを用いたフレキシブルディバイス
CN110091078A (zh) * 2019-05-31 2019-08-06 华中科技大学 一种用于玻璃的三维柱状孔激光切割方法
JP2021111725A (ja) 2020-01-14 2021-08-02 株式会社ブイ・テクノロジー レーザアニール装置及びレーザアニール方法
CN114078695A (zh) * 2020-08-10 2022-02-22 中芯南方集成电路制造有限公司 一种退火方法
JP2023011329A (ja) * 2021-07-12 2023-01-24 住友重機械工業株式会社 アニール装置の制御装置、アニール装置、及びアニール方法
CN114054971B (zh) * 2022-01-10 2022-07-12 武汉华工激光工程有限责任公司 一种自动实时gv值检测及补偿的方法和系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000340503A (ja) 1999-05-26 2000-12-08 Seiko Epson Corp 半導体膜の製造方法、薄膜トランジスタの製造方法、アクティブマトリクス基板
JP2003257885A (ja) 2001-09-25 2003-09-12 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3871725B2 (ja) * 1994-07-22 2007-01-24 株式会社半導体エネルギー研究所 レーザー処理方法
AU6865300A (en) * 1999-09-10 2001-04-17 Nikon Corporation Light source and wavelength stabilization control method, exposure apparatus andexposure method, method for producing exposure apparatus, and device manufactur ing method and device
JP3908153B2 (ja) * 2001-11-16 2007-04-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003197523A (ja) * 2001-12-26 2003-07-11 Sharp Corp 結晶性半導体膜の製造方法および半導体装置
JP2003347236A (ja) * 2002-05-28 2003-12-05 Sony Corp レーザ照射装置
JP4813743B2 (ja) * 2002-07-24 2011-11-09 株式会社 日立ディスプレイズ 画像表示装置の製造方法
JP2004114065A (ja) 2002-09-24 2004-04-15 Sharp Corp レーザ照射装置
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
JP4024657B2 (ja) * 2002-11-21 2007-12-19 株式会社日本製鋼所 結晶の周期性構造の形成方法及びその装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000340503A (ja) 1999-05-26 2000-12-08 Seiko Epson Corp 半導体膜の製造方法、薄膜トランジスタの製造方法、アクティブマトリクス基板
JP2003257885A (ja) 2001-09-25 2003-09-12 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法

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US7566669B2 (en) 2009-07-28
CN1969377A (zh) 2007-05-23
US20070148834A1 (en) 2007-06-28
JP2006032928A (ja) 2006-02-02
WO2005124841A1 (en) 2005-12-29
CN101599427B (zh) 2012-05-30
CN101599427A (zh) 2009-12-09
KR20070047275A (ko) 2007-05-04
CN100524629C (zh) 2009-08-05
JP5072197B2 (ja) 2012-11-14

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