JP5061728B2 - シリコン単結晶の育成方法 - Google Patents

シリコン単結晶の育成方法 Download PDF

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Publication number
JP5061728B2
JP5061728B2 JP2007142988A JP2007142988A JP5061728B2 JP 5061728 B2 JP5061728 B2 JP 5061728B2 JP 2007142988 A JP2007142988 A JP 2007142988A JP 2007142988 A JP2007142988 A JP 2007142988A JP 5061728 B2 JP5061728 B2 JP 5061728B2
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Japan
Prior art keywords
single crystal
carbon
silicon single
silicon
crucible
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JP2007142988A
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English (en)
Japanese (ja)
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JP2008297139A (ja
JP2008297139A5 (enExample
Inventor
亮二 星
将 園川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2007142988A priority Critical patent/JP5061728B2/ja
Priority to KR1020097024707A priority patent/KR101465425B1/ko
Priority to US12/450,807 priority patent/US20100116195A1/en
Priority to DE112008001201T priority patent/DE112008001201T5/de
Priority to PCT/JP2008/001029 priority patent/WO2008146443A1/ja
Publication of JP2008297139A publication Critical patent/JP2008297139A/ja
Publication of JP2008297139A5 publication Critical patent/JP2008297139A5/ja
Application granted granted Critical
Publication of JP5061728B2 publication Critical patent/JP5061728B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2007142988A 2007-05-30 2007-05-30 シリコン単結晶の育成方法 Active JP5061728B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007142988A JP5061728B2 (ja) 2007-05-30 2007-05-30 シリコン単結晶の育成方法
KR1020097024707A KR101465425B1 (ko) 2007-05-30 2008-04-18 실리콘 단결정의 육성방법
US12/450,807 US20100116195A1 (en) 2007-05-30 2008-04-18 Method for growing silicon single crystal
DE112008001201T DE112008001201T5 (de) 2007-05-30 2008-04-18 Verfahren zum Wachsenlassen eines Silizium-Einkristalls
PCT/JP2008/001029 WO2008146443A1 (ja) 2007-05-30 2008-04-18 シリコン単結晶の育成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007142988A JP5061728B2 (ja) 2007-05-30 2007-05-30 シリコン単結晶の育成方法

Publications (3)

Publication Number Publication Date
JP2008297139A JP2008297139A (ja) 2008-12-11
JP2008297139A5 JP2008297139A5 (enExample) 2009-11-26
JP5061728B2 true JP5061728B2 (ja) 2012-10-31

Family

ID=40074721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007142988A Active JP5061728B2 (ja) 2007-05-30 2007-05-30 シリコン単結晶の育成方法

Country Status (5)

Country Link
US (1) US20100116195A1 (enExample)
JP (1) JP5061728B2 (enExample)
KR (1) KR101465425B1 (enExample)
DE (1) DE112008001201T5 (enExample)
WO (1) WO2008146443A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5510359B2 (ja) * 2011-02-21 2014-06-04 信越半導体株式会社 炭素ドープシリコン単結晶の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3980854A (en) * 1974-11-15 1976-09-14 Rca Corporation Graphite susceptor structure for inductively heating semiconductor wafers
JPS58151392A (ja) * 1982-02-26 1983-09-08 Sumitomo Metal Mining Co Ltd かさ比重の大きい酸化物単結晶引上げ用原料の調整方法
JPS6033210A (ja) * 1983-08-02 1985-02-20 Komatsu Denshi Kinzoku Kk 半導体用シリコンの破砕方法
DE4106589C2 (de) * 1991-03-01 1997-04-24 Wacker Siltronic Halbleitermat Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski
TW429273B (en) * 1996-02-08 2001-04-11 Shinetsu Handotai Kk Method for feeding garnular silicon material, feed pipe used in the method, and method of manufacturing a silicon monocrystal
EP0871233B1 (en) * 1996-07-30 2000-01-12 Sony Corporation Non-aqueous electrolyte secondary battery
JPH11302099A (ja) 1998-04-21 1999-11-02 Sumitomo Metal Ind Ltd シリコン単結晶の製造方法
JPH11312683A (ja) 1998-04-28 1999-11-09 Sumitomo Metal Ind Ltd 半導体単結晶シリコンの製造方法
JP4256576B2 (ja) * 2000-08-31 2009-04-22 信越半導体株式会社 半導体単結晶製造装置
JP2002293691A (ja) * 2001-03-30 2002-10-09 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶並びにシリコンウエーハ
WO2003005417A2 (en) * 2001-07-05 2003-01-16 Axt, Inc. Method and apparatus for growing semiconductor crystals with a rigid support
DE10133635A1 (de) * 2001-07-11 2003-02-06 Sgl Carbon Ag Mehrschichtiger Keramik-Verbund
KR20030035152A (ko) * 2001-10-30 2003-05-09 주식회사 하이닉스반도체 반도체웨이퍼 제조방법
US20030101924A1 (en) * 2001-11-15 2003-06-05 Memc Electronic Materials, Inc. Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
JP4507690B2 (ja) 2004-05-10 2010-07-21 信越半導体株式会社 シリコン単結晶の製造方法及びシリコン単結晶
JP4992425B2 (ja) * 2004-08-30 2012-08-08 三菱化学株式会社 非水系二次電池用負極材料、非水系二次電池用負極、および非水系二次電池

Also Published As

Publication number Publication date
JP2008297139A (ja) 2008-12-11
KR101465425B1 (ko) 2014-11-26
DE112008001201T5 (de) 2010-08-05
KR20100017406A (ko) 2010-02-16
US20100116195A1 (en) 2010-05-13
WO2008146443A1 (ja) 2008-12-04

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