JP5054901B2 - 超高速均一プラズマ処理装置 - Google Patents
超高速均一プラズマ処理装置 Download PDFInfo
- Publication number
- JP5054901B2 JP5054901B2 JP2005204419A JP2005204419A JP5054901B2 JP 5054901 B2 JP5054901 B2 JP 5054901B2 JP 2005204419 A JP2005204419 A JP 2005204419A JP 2005204419 A JP2005204419 A JP 2005204419A JP 5054901 B2 JP5054901 B2 JP 5054901B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- process region
- separation member
- plasma
- tubular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/710,457 US7845309B2 (en) | 2004-07-13 | 2004-07-13 | Ultra high speed uniform plasma processing system |
| US10/710,457 | 2004-07-13 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006032344A JP2006032344A (ja) | 2006-02-02 |
| JP2006032344A5 JP2006032344A5 (enExample) | 2010-08-12 |
| JP5054901B2 true JP5054901B2 (ja) | 2012-10-24 |
Family
ID=35115691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005204419A Expired - Lifetime JP5054901B2 (ja) | 2004-07-13 | 2005-07-13 | 超高速均一プラズマ処理装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7845309B2 (enExample) |
| EP (1) | EP1617457B1 (enExample) |
| JP (1) | JP5054901B2 (enExample) |
| CN (1) | CN1728916B (enExample) |
| SG (2) | SG119365A1 (enExample) |
| TW (1) | TWI392402B (enExample) |
Families Citing this family (133)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7013834B2 (en) * | 2002-04-19 | 2006-03-21 | Nordson Corporation | Plasma treatment system |
| TWI274978B (en) * | 2004-02-25 | 2007-03-01 | Advanced Display Proc Eng Co | Apparatus for manufacturing flat-panel display |
| JP4934595B2 (ja) * | 2005-01-18 | 2012-05-16 | エーエスエム アメリカ インコーポレイテッド | 薄膜成長用反応装置 |
| KR101410706B1 (ko) * | 2006-08-22 | 2014-06-25 | 노드슨 코포레이션 | 처리 시스템에서 피가공물을 취급하기 위한 장치 및 방법 |
| WO2008106499A2 (en) * | 2007-02-28 | 2008-09-04 | Applied Materials, Inc. | Rigid rf transmission line with easy removal section |
| JP5102706B2 (ja) * | 2008-06-23 | 2012-12-19 | 東京エレクトロン株式会社 | バッフル板及び基板処理装置 |
| JP5231117B2 (ja) * | 2008-07-24 | 2013-07-10 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
| US8617347B2 (en) * | 2009-08-06 | 2013-12-31 | Applied Materials, Inc. | Vacuum processing chambers incorporating a moveable flow equalizer |
| US20110146577A1 (en) * | 2009-12-22 | 2011-06-23 | Applied Materials, Inc. | Showerhead with insulated corner regions |
| US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
| JP5597463B2 (ja) * | 2010-07-05 | 2014-10-01 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| US9184028B2 (en) | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
| US8869742B2 (en) * | 2010-08-04 | 2014-10-28 | Lam Research Corporation | Plasma processing chamber with dual axial gas injection and exhaust |
| US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
| US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
| US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
| CN103165368B (zh) * | 2011-12-16 | 2016-02-03 | 中微半导体设备(上海)有限公司 | 一种温度可调的等离子体约束装置 |
| KR20130086806A (ko) * | 2012-01-26 | 2013-08-05 | 삼성전자주식회사 | 박막 증착 장치 |
| KR101505536B1 (ko) * | 2012-05-14 | 2015-03-25 | 피에스케이 주식회사 | 배플 및 이를 가지는 기판 처리 장치 |
| US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
| US9373517B2 (en) * | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
| US9385017B2 (en) | 2012-08-06 | 2016-07-05 | Nordson Corporation | Apparatus and methods for handling workpieces of different sizes |
| US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
| MX2015003569A (es) * | 2012-09-19 | 2016-06-21 | Apjet Inc | Aparato y metodo para procesar plasma bajo presion atmosferica. |
| US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US10777387B2 (en) * | 2012-09-28 | 2020-09-15 | Semes Co., Ltd. | Apparatus for treating substrate |
| US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
| US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
| US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
| US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
| US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
| US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
| US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
| CN103607836A (zh) * | 2013-11-27 | 2014-02-26 | 苏州市奥普斯等离子体科技有限公司 | 一种新型等离子体处理装置 |
| US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
| US9852905B2 (en) * | 2014-01-16 | 2017-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Systems and methods for uniform gas flow in a deposition chamber |
| US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
| US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
| US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
| US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
| US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
| US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
| US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
| US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
| US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
| US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
| US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
| US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
| US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
| US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
| US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
| US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
| US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| KR102477302B1 (ko) * | 2015-10-05 | 2022-12-13 | 주성엔지니어링(주) | 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법 |
| US10358721B2 (en) * | 2015-10-22 | 2019-07-23 | Asm Ip Holding B.V. | Semiconductor manufacturing system including deposition apparatus |
| US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US9958782B2 (en) * | 2016-06-29 | 2018-05-01 | Applied Materials, Inc. | Apparatus for post exposure bake |
| US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
| US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
| US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
| US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
| US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
| US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
| US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
| US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
| US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
| US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
| US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
| US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
| US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
| JP7176860B6 (ja) | 2017-05-17 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 前駆体の流れを改善する半導体処理チャンバ |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
| US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
| US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
| US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
| US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
| US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
| US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
| US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
| US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
| US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
| US10872803B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
| US10872804B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
| US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
| TWI766433B (zh) | 2018-02-28 | 2022-06-01 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
| US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
| US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
| US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
| US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
| US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
| US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
| US20210287884A1 (en) * | 2018-07-30 | 2021-09-16 | Nordson Corporation | Systems for workpiece processing with plasma |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
| TW202306022A (zh) * | 2021-06-18 | 2023-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣相沉積總成、基座處理設備以及清潔基材之方法 |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4367114A (en) | 1981-05-06 | 1983-01-04 | The Perkin-Elmer Corporation | High speed plasma etching system |
| US4381965A (en) * | 1982-01-06 | 1983-05-03 | Drytek, Inc. | Multi-planar electrode plasma etching |
| JPS6295828A (ja) | 1985-10-23 | 1987-05-02 | Hitachi Ltd | プラズマ処理装置 |
| JPS62299031A (ja) | 1986-06-18 | 1987-12-26 | Nec Corp | 平行平板型エツチング装置の電極構造 |
| US4786359A (en) * | 1987-06-24 | 1988-11-22 | Tegal Corporation | Xenon enhanced plasma etch |
| JPH0770526B2 (ja) * | 1987-09-14 | 1995-07-31 | 富士通株式会社 | 減圧処理装置 |
| JP2790878B2 (ja) * | 1988-11-16 | 1998-08-27 | 治久 木下 | ドライプロセス装置 |
| JPH02294029A (ja) * | 1989-05-08 | 1990-12-05 | Nec Kyushu Ltd | ドライエッチング装置 |
| US5376211A (en) * | 1990-09-29 | 1994-12-27 | Tokyo Electron Limited | Magnetron plasma processing apparatus and processing method |
| JP3239168B2 (ja) * | 1992-01-09 | 2001-12-17 | アネルバ株式会社 | プラズマ処理装置 |
| JPH05315295A (ja) * | 1992-05-08 | 1993-11-26 | Hitachi Sci Syst:Kk | プラズマエッチング装置 |
| FI97731C (fi) * | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Menetelmä ja laite ohutkalvojen valmistamiseksi |
| US5605637A (en) * | 1994-12-15 | 1997-02-25 | Applied Materials Inc. | Adjustable dc bias control in a plasma reactor |
| US5891350A (en) * | 1994-12-15 | 1999-04-06 | Applied Materials, Inc. | Adjusting DC bias voltage in plasma chambers |
| JPH08260158A (ja) * | 1995-01-27 | 1996-10-08 | Kokusai Electric Co Ltd | 基板処理装置 |
| JP3135031B2 (ja) * | 1995-03-15 | 2001-02-13 | キヤノン株式会社 | 堆積膜形成装置 |
| US5534751A (en) | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
| JP3668535B2 (ja) * | 1995-08-14 | 2005-07-06 | 株式会社アルバック | エッチング装置 |
| US5951887A (en) | 1996-03-28 | 1999-09-14 | Sumitomo Metal Industries, Ltd. | Plasma processing apparatus and plasma processing method |
| US6051100A (en) | 1997-10-24 | 2000-04-18 | International Business Machines Corporation | High conductance plasma containment structure |
| US6251216B1 (en) * | 1997-12-17 | 2001-06-26 | Matsushita Electronics Corporation | Apparatus and method for plasma processing |
| JP3314711B2 (ja) * | 1998-04-03 | 2002-08-12 | 株式会社富士電機総合研究所 | 薄膜製造装置 |
| JP2000030898A (ja) * | 1998-07-09 | 2000-01-28 | Kokusai Electric Co Ltd | プラズマ処理装置 |
| JP3035735B2 (ja) * | 1998-09-07 | 2000-04-24 | 国際電気株式会社 | 基板処理装置および基板処理方法 |
| CN2360422Y (zh) * | 1998-10-06 | 2000-01-26 | 安德祥 | 用于气相沉积的自动化镀膜装置 |
| US6178919B1 (en) | 1998-12-28 | 2001-01-30 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
| JP3449275B2 (ja) * | 1999-01-25 | 2003-09-22 | 松下電器産業株式会社 | 真空処理装置および真空処理方法 |
| WO2000060653A1 (en) * | 1999-03-30 | 2000-10-12 | Tokyo Electron Limited | Plasma treatment device, its maintenance method and its installation method |
| JP2002064064A (ja) * | 2000-08-21 | 2002-02-28 | Hitachi Kokusai Electric Inc | プラズマ処理装置 |
| JP2002110646A (ja) * | 2000-09-29 | 2002-04-12 | Tokyo Electron Ltd | プラズマ処理装置 |
| JP2002126675A (ja) * | 2000-10-30 | 2002-05-08 | Yamato Scient Co Ltd | プラズマ洗浄装置 |
| US6403491B1 (en) | 2000-11-01 | 2002-06-11 | Applied Materials, Inc. | Etch method using a dielectric etch chamber with expanded process window |
| JP4602532B2 (ja) * | 2000-11-10 | 2010-12-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20020127853A1 (en) | 2000-12-29 | 2002-09-12 | Hubacek Jerome S. | Electrode for plasma processes and method for manufacture and use thereof |
| US6744212B2 (en) | 2002-02-14 | 2004-06-01 | Lam Research Corporation | Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions |
| US7013834B2 (en) * | 2002-04-19 | 2006-03-21 | Nordson Corporation | Plasma treatment system |
| US20040118344A1 (en) | 2002-12-20 | 2004-06-24 | Lam Research Corporation | System and method for controlling plasma with an adjustable coupling to ground circuit |
| TW577122B (en) * | 2003-04-08 | 2004-02-21 | Sp Probe Inc | Plasma etching method and device |
-
2004
- 2004-07-13 US US10/710,457 patent/US7845309B2/en not_active Expired - Fee Related
-
2005
- 2005-06-30 EP EP05014248A patent/EP1617457B1/en not_active Ceased
- 2005-07-06 TW TW094122856A patent/TWI392402B/zh not_active IP Right Cessation
- 2005-07-06 SG SG200504851A patent/SG119365A1/en unknown
- 2005-07-06 SG SG200717678-7A patent/SG137851A1/en unknown
- 2005-07-13 JP JP2005204419A patent/JP5054901B2/ja not_active Expired - Lifetime
- 2005-07-13 CN CN200510083627.9A patent/CN1728916B/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1617457A2 (en) | 2006-01-18 |
| SG137851A1 (en) | 2007-12-28 |
| TWI392402B (zh) | 2013-04-01 |
| EP1617457B1 (en) | 2011-12-28 |
| CN1728916B (zh) | 2011-06-01 |
| EP1617457A3 (en) | 2006-10-18 |
| JP2006032344A (ja) | 2006-02-02 |
| US7845309B2 (en) | 2010-12-07 |
| TW200616498A (en) | 2006-05-16 |
| SG119365A1 (en) | 2006-02-28 |
| US20060011299A1 (en) | 2006-01-19 |
| CN1728916A (zh) | 2006-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5054901B2 (ja) | 超高速均一プラズマ処理装置 | |
| TWI754077B (zh) | 電漿處理裝置 | |
| US5464476A (en) | Plasma processing device comprising plural RF inductive coils | |
| KR100900595B1 (ko) | 플라즈마 한정 및 유동 컨덕턴스 강화 방법 및 장치 | |
| KR101891445B1 (ko) | 플라즈마 처리 장치 및 그것에 이용하는 배기 구조 | |
| KR101925972B1 (ko) | 플라즈마 처리 장치 및 이에 이용되는 배기 구조 | |
| KR101725564B1 (ko) | 플라즈마 처리장치 | |
| US20180240686A1 (en) | Semiconductor Processing System Having Multiple Decoupled Plasma Sources | |
| CN1501452A (zh) | 等离子加工装置 | |
| KR20220010585A (ko) | 개선된 유동 균일성/가스 컨덕턴스로 가변 프로세스 볼륨을 처리하기 위한 대칭적 챔버 본체 설계 아키텍처 | |
| KR20140086836A (ko) | 플라즈마 처리 용기 및 플라즈마 처리 장치 | |
| CN111863578A (zh) | 一种等离子体处理设备 | |
| US20210134567A1 (en) | Substrate treating apparatus | |
| CN205529029U (zh) | 气体扩散装置、工艺腔室及半导体加工设备 | |
| KR20160106226A (ko) | 유도 결합 플라즈마 처리 장치의 안테나 | |
| WO2006011336A1 (ja) | 高周波プラズマ処理装置および高周波プラズマ処理方法 | |
| JP2003243376A (ja) | プラズマ処理装置 | |
| CN112563110A (zh) | 等离子体处理装置 | |
| KR101771667B1 (ko) | 유전체 장벽 방전용 전극 조립체 및 이를 이용한 플라즈마 처리장치 | |
| KR100673597B1 (ko) | 플라즈마 챔버 | |
| KR20060103107A (ko) | 플라즈마 처리 장치 | |
| KR100371676B1 (ko) | 플라스마처리장치 | |
| JP2001023972A (ja) | プラズマ処理装置 | |
| KR200426498Y1 (ko) | 플라즈마 공정 챔버에서 이용하기 위한 프로세스 키트 | |
| TW202425058A (zh) | 氣體冷卻式高功率連接桿 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080714 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080714 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100625 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101224 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110131 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110428 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110509 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110728 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120702 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120730 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5054901 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150803 Year of fee payment: 3 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |