J I I L厶丄 五、發明說明（1) 【發明所屬之技術領域】 透過3 = =刻之方法及裝置，尤指-種 電浆之產生。利用狹=;=往；外增加感應電磁 統。 之刼作時間’而成-連續式真空電漿蝕刻系 【先前技術】 其中= 基板表面材料以達設計需求之製程。 Λ式姓列刀曰=式蚀刻（Wet etch)及乾式餘刻㈣ «^ ^ ,ι^ # tTAT ^ ^ ^ ^ ^ ^ ^ ® ^ ^ ^ ^ 蝕刻之缺生1 之要求，然而，濕式蝕刻具有等向性 士 i^ §尺寸縮小到3微米以下，濕式蝕刻將無法 ^程；乾式#刻又稱電衆#刻，係、利用氣態的化 =1 y和表面產生化學反應或物理碰撞，藉此蝕刻材料 士 =成，發性副產品由真空幫浦抽出，由於電漿可產生自 土這些自由基會增加物理化學之反應速率並加強蝕刻 ，而且，電漿蝕刻不會有等向性之問題，因此，乾式（電 ^ )敍刻被廣泛應用於半導體製程之蝕刻步驟。 常見之電漿產生方式可區分為以下幾種： 1 ) DC直流電位系統，大部分之物理氣相沈積系統 均採用直流電力產生電漿，如美國專利案第573341 9號。 (2)微波（Microwave)，係利用頻率2.45 GHz之微 波活化’使其產生離子化及電化學反應，通常應用於微波 電水化學氣相沈積（蒸鍍）法（Microwave plasmaJ I I L 厶 丄 V. Description of the invention (1) [Technical field to which the invention belongs] Through the method and device of 3 = = carving, especially-the generation of plasma. Use narrow =; = to; outside; increase induction electromagnetic system. The operation time is made-continuous vacuum plasma etching system [Previous technology] Where = substrate surface material to meet the design requirements of the process. Λ type surname knife = Wet etch and dry type engraving «^ ^, ι ^ # tTAT ^ ^ ^ ^ ^ ^ ^ ® ^ ^ ^ ^ Etching is isotropic i ^ § If the size is reduced to less than 3 micrometers, wet etching will not be able to process; dry # 刻, also known as electricity public #lithography, the use of gaseous chemical = 1 y and chemical reaction or physics on the surface Collision, by which the etching material is equal, and the by-products are extracted by the vacuum pump. Since the plasma can be generated from the soil, these free radicals will increase the physical and chemical reaction rate and enhance the etching. Moreover, the plasma etching will not have an isotropic direction. Therefore, dry (electrical) etching is widely used in the etching steps of semiconductor processes. Common plasma generation methods can be divided into the following: 1) DC direct current potential system, most physical vapor deposition systems use direct current to generate plasma, such as US Patent No. 573341 9. (2) Microwave (Microwave) is used to activate ionization and electrochemical reaction by using microwave activation at 2.45 GHz. It is usually used in microwave electro-water chemical vapor deposition (evaporation) method.
第5頁 577122Page 5 577122
五、發明說明（2) enhanced chemical vapor deposition, MPCVD) ’ 如美國 專利案第6423924號。 (3)射頻（Radio Frequency, RF)，在半導體製種 中最常見的就是射頻13· 56MHz電漿源，利用兩平行電極通 過射頻高壓電，在平行電極之間產生交流電場，自由電子 受到交流電場的影響而被加速，直到自由電子與反應室中 的原子或分子碰撞，藉以產生一個離子和另一個自由電 子，由於離子化碰撞是一連串之反應，因此，整個反應室 將會充滿等量之電子與離子，也就是充滿了電漿，如美國 專利案第5766404號。V. Description of the invention (2) enhanced chemical vapor deposition (MPCVD) ′ Such as US Patent No. 6423924. (3) Radio frequency (RF). The most common type of semiconductor in semiconductor production is a radio frequency 13.56MHz plasma source, which uses two parallel electrodes to pass an RF high-voltage electricity to generate an alternating electric field between the parallel electrodes. The effect of the AC electric field is accelerated until free electrons collide with atoms or molecules in the reaction chamber, thereby generating an ion and another free electron. Since the ionization collision is a series of reactions, the entire reaction chamber will be filled with the same amount The electrons and ions are filled with plasma, such as US Patent No. 5766404.
(4 )還有一些研究者會利用射頻加上永久或電磁場 ，藉以增加電漿之產量。 然而’無論是上述何種電漿產生方式，應用於蝕刻製 程上，最大的問題就是無法連續操作，大多數之電漿反應 腔體内設有電極及基板置放區，需要將整個反應腔體内氣 體抽離，再產生電漿，而後進行蝕刻步驟，再將整個反應 腔體破真空回大氣’以置換基板，係屬於批次式反應丨如 =來，不僅造成人工操作程序之複雜，更使得製程時間 無法縮短。(4) Some researchers will use radio frequency plus permanent or electromagnetic fields to increase the production of plasma. However, no matter which plasma generation method is used in the etching process, the biggest problem is that it cannot be operated continuously. Most of the plasma reaction chambers have electrodes and substrate placement areas, and the entire reaction chamber needs to be The internal gas is evacuated to generate plasma, and then the etching step is performed, and the entire reaction chamber is evacuated back to the atmosphere to replace the substrate, which is a batch reaction. If = comes, it not only complicates the manual operation process, but also Makes the process time impossible to shorten.
【發明内容】 疋，本創作之主要目的，在於解決上述之缺失，避 及奘罢的存在’本創作係為—種圓形連續式電漿蝕刻方法 汉在罝，可大幅縮短操作所需時間。 J不創作為一種電漿蝕刻之方法及裝 為達上述之目的，太合丨彳七&[Summary of the Invention] Alas, the main purpose of this creation is to solve the above-mentioned shortcomings and to avoid the existence of abandonment. 'This creation is a circular continuous plasma etching method Han Zai, which can greatly reduce the time required for operation . J does not create a method and equipment for plasma etching. To achieve the above purpose, Taihe 丨 合 七 &
577122 五、發明說明（3) 置，係利用射頻方式產 及一移動裝置，該電漿 頻電極，該基板反應盤 電漿反應區中腔體，可 體；藉由移動裝置將基 性之電漿反應系統，加 生射頻電磁效應，增加 【實施方式】 有關本創作之詳細 明如下： 請參閱『第1、2圖 放大示意圖，如圖所示 ’係利用射頻方式產生 係包括：一持續維持於 相鄰於電漿反應腔體 體1 0内設有一圓形基板 ，該基板反應盤11係用 提供能量以產生電襞， ，須將電漿反應腔體10 行後續姓刻處理。以電 1 2所提供之能量外，環 場，藉由磁力作用增加 可為一機械手臂，可將 體1 〇之接駁室4 0，利用 生電漿，係包括有一電漿反應腔體 反應腔體内設有一基板反應盤及射 係成圓形配置；該移動裝置相鄰於 將預定處理之基板置入電漿反應腔 板置入電漿反應區，可形成一連續 上環狀配置之電漿平行極板更可產 電漿之產生。 說明及技術内容，現就配合圖式說 所示 係本創作 :本創作係為一種 電漿進行蝕刻，該 真空環境下之電漿 之旋轉取放裝置20 反應盤11及環狀射 以置放基板30，而 該電漿反應腔體1 0 與密封接駁室40抽 漿進行蝕刻時，除 形射頻電極1 2更可 電漿之產量；該旋 預定處理之基板30 該旋轉取放裝置20 外觀立 電漿蝕 電漿蝕 反應腔 ，該電 頻平行 射頻電 並配置 成真空 了射頻 產生感 轉取放 置入電 將未處 體及局部 刻之裝置 刻之裝置 體10及一 漿反應腔 電極板12 極12則是 有幫浦1 3 ，方能進 平行電極 應射頻磁 裝置20係 漿反應腔 理之基板577122 V. Description of the invention (3) The device is produced by a radio frequency method and a mobile device. The plasma frequency electrode and the substrate reaction plate are in the cavity of the plasma reaction area. The base can be charged by the mobile device. The plasma reaction system adds radio frequency electromagnetic effects and adds [Implementation] The details of this creation are as follows: Please refer to the "enlarged schematic diagrams of Figures 1 and 2 as shown in the figure", which is generated by RF, including: a continuous maintenance A circular substrate is provided in the plasma reaction chamber 10 adjacent to the plasma reaction chamber. The substrate reaction plate 11 is used to provide energy to generate electric maggots. The plasma reaction chamber must be engraved with 10 subsequent names. In addition to the energy provided by electricity 12, the ring field can be a robotic arm through the increase of magnetic force, which can connect the body 10 to the connection room 40. The use of plasma generation includes a plasma reaction chamber reaction. A cavity reaction plate and a radiation system are arranged in a circular configuration in the cavity; the moving device is adjacent to placing the substrate to be processed into the plasma reaction cavity plate into the plasma reaction area, and can form a continuous upper ring configuration. Plasma parallel plates can produce plasma. The description and technical content are now in accordance with the diagram. This creation is this creation: This creation is a plasma etching. The plasma's rotary pick-and-place device 20 under the vacuum environment, the reaction disk 11 and the ring-shaped shot are placed. The substrate 30 is plasma-reacted when the plasma reaction chamber 10 and the sealed connection chamber 40 are pumped for etching, and the RF electrode 12 is deformed for plasma production; the substrate 30 that is scheduled to be processed, and the rotary pick-and-place device 20 Appearance of plasma erosion reaction chamber, the electric frequency is parallel to the radio frequency and is configured to vacuum the radio frequency generation and transfer to the device body 10 and a plasma reaction chamber electrode plate, which are engraved with unprocessed and partially engraved devices. 12 poles 12 are pumps 1 3 so that they can enter parallel electrodes. RF magnetic device 20 series plasma reaction cavity substrate
第7頁 577122 五、發明說明（4) 30置入接驳室40。 請參閱『第3、4-1〜4-8圖所示』，係本創作之流程及 操作作動示意圖，如圖所示：本創作係為一種電漿蝕刻之 方法，利用射頻產生電漿進行蝕刻，該電漿蝕刻之方法係 包括有以下之步驟： a) 裝載基板1 :將預定處理之基板3〇(substrate)利用 旋轉取放裝置20置入接駁室4〇内，該基板3〇係置放於接駁 ^40内之基板置放區41，該基板置放區41下方並設有推進 卓元42 ’以控制基板置放區41之升降。 b) 密封接駁室2 :當基板30置入接駁室4〇後，降下接 駁室40之蓋體43，且該蓋體設有閥門44可外接幫浦13，將 置有基板3 0之接駁室4 0内氣體抽離，使得接駁室4 〇成為真 空。 、 c) 送入電漿反應腔體3 :接駁室4〇密封後，置放有基 板3 0之基板置放區41將利用推進單元4 2下降，直到基板置 放區41與圓形基板反應盤11同一水平，再將基板3〇利用圓 形基板反應盤11下方之旋轉單元14以旋轉方式進入設有平 行射頻電極12之電漿反應區，藉由射頻電極12提供電漿產 生所需電源，以電漿對基板30進行蝕刻，而且電漿反應腔 體10内之射頻電極12係為環狀配置，更可產生射頻磁^， 增加電漿之產量。 ％ d )推出基板4 :將先前循環而至基板置放區4 1，利用 推進單元42上升推出圓形基板反應盤11，進入接駁室4〇 ; 此循環而至之基板30已完成蝕刻。 ’ 577122 五、發明說明（5) e )開啟接駁室5 :封閉閥門4 4並進氣，使接駁室4 〇回 ，至大氣壓力下，此時電漿反應腔體丨〇，持續維持真空狀 態將接駁室4 0蓋體6 3升高，開啟接駁室4 〇並以旋轉取放裝 置20取出完成蝕刻之基板3〇，同時置入另一預定處理之基 板3 0。 綜上所述’本創作具有以下之優點： (1 )本創作之電漿反應接駁室及旋轉取放裝置結構，可 使真空電漿蚀刻製程得以連續式方式進行，改良習知結構 僅能以批次式進行蝕刻之缺失，因此，可大幅縮短製程時 間，提高生產效率。 (2 )本創作之圓形電漿反應盤與環狀射頻平行電極相距 極小，可增進電漿之產*，且該射頻電極成環狀配置，再 加上感應磁場效應，更可提高電漿之產生。 (3 )由於本創作係以旋轉方式將基板置入 因此可週而復始的使基板以簡短之時反上[ 壓力之間，使基板迅速進出接駁冑 真工與大乳 I*隹以上所述者，僅為本創作之較佳 ，之：定本創作實施之範圍，…：不 範圍所作之均等變化與修都電槳產m專: =主要在於連續式操作之設計，可搭配各式：電= 方式，加DC、Mlcrowave等，皆應屬 ，成 範圍内。 甸个別邗寻利涵盍之 577122 圖式簡單說明 【圖式之簡單說明】 第1圖，係本創作之外觀立體示意圖 第2圖，係本創作之局部放大示意圖 第3圖，係本創作之流程示意圖 第4-：1〜4-8圖，係本創作之操作作動示意圖 【圖式之符號說明】 裝載基板..................1 密封接駁室.................2 送入電漿反應腔體..............3 推出基板..................4 開啟接駁室.................5 電漿反應腔體................10 基板反應盤.................11 電極....................12 % ^....................13 旋轉單元..................14 旋轉取放裝置................20 ；&才反....................30 接駁室...................40 基板置放區.................41 推進單元..................42 蓋體....................43 閥門....................4 4Page 7 577122 V. Description of the invention (4) 30 is placed in the connection room 40. Please refer to "Figures 3, 4-1 to 4-8", which is a schematic diagram of the flow and operation of this creation, as shown in the figure: This creation is a plasma etching method, which uses RF to generate plasma. Etching, the plasma etching method includes the following steps: a) Loading the substrate 1: The substrate 30 (substrate) that is to be processed is placed in the connection chamber 40 using a rotary pick and place device 20, and the substrate 3 is loaded. It is placed in the substrate placement area 41 in the connection 40, and the advancement Zhuoyuan 42 'is arranged below the substrate placement area 41 to control the elevation of the substrate placement area 41. b) Sealed connection room 2: After the substrate 30 is placed in the connection room 40, the cover 43 of the connection room 40 is lowered, and the cover is provided with a valve 44 for external connection to the pump 13, and the substrate 30 is placed The gas in the connection chamber 40 is evacuated, so that the connection chamber 40 becomes a vacuum. C) Feed into the plasma reaction chamber 3: After the connection chamber 40 is sealed, the substrate placement area 41 on which the substrate 30 is placed will be lowered by the advancing unit 42 until the substrate placement area 41 and the circular substrate The reaction plate 11 is at the same level, and then the substrate 30 is rotated into a plasma reaction zone provided with a parallel RF electrode 12 by a rotating unit 14 below the circular substrate reaction plate 11, and the plasma is provided by the RF electrode 12. The power source uses a plasma to etch the substrate 30, and the radio frequency electrode 12 in the plasma reaction chamber 10 is configured in a ring shape, which can generate radio frequency magnetism and increase the output of the plasma. % D) Launching the substrate 4: The previous cycle is carried out to the substrate placement area 41, and the circular substrate reaction tray 11 is pushed up by the pushing unit 42 to enter the connection chamber 40; the substrate 30 which has arrived in this cycle has completed the etching. '577122 V. Description of the invention (5) e) Open the connection chamber 5: Close the valve 44 and feed air to make the connection chamber 40 times to atmospheric pressure. At this time, the plasma reaction chamber is maintained continuously. In a vacuum state, the lid body 63 of the connection chamber 40 is raised, the connection chamber 40 is opened, and the etched substrate 30 is taken out by the rotary pick-and-place device 20, while another substrate 30 of predetermined processing is placed at the same time. In summary, 'this creation has the following advantages: (1) The plasma reaction connection room and rotary pick-and-place device structure of this creation can make the vacuum plasma etching process proceed in a continuous manner, and the conventional structure can only be improved. The lack of etching in batches can greatly reduce process time and improve production efficiency. (2) The circular plasma reaction plate created in this creation is very close to the annular RF parallel electrode, which can increase the plasma production *, and the RF electrode is arranged in a ring, and the induction magnetic field effect can increase the plasma. To produce. (3) Since the substrate is placed in a rotating manner in this creation, the substrate can be turned back and forth in a short time. [The pressure allows the substrate to quickly enter and exit the connection. , Is only the best of this creation, of which: the scope of the implementation of this set of creation, ...: the equal changes that are not made within the scope and repair of the electric propeller m Special: = mainly for the design of continuous operation, can be used with various types: electricity = method , Plus DC, Mlcrowave, etc., should belong to the range. 577122 Schematic description of individual figures seeking profits [Simplified description of the diagram] Figure 1, which is a three-dimensional schematic diagram of the appearance of this creation, Figure 2, which is a partially enlarged schematic diagram of this creation, and Figure 3, which is this creation. Schematic diagram of flow chart No. 4-: 1 ~ 4-8, it is a schematic diagram of the operation and operation of this creation [Symbol description of the drawing] Loading the substrate ........ 1 Seal Connection room ... 2 Feed into the plasma reaction chamber ... 3 Push out the substrate ... ............. 4 Open the connection room ....... 5 Plasma reaction chamber ......... ....... 10 Substrate Reaction Plate .. 11 Electrode .............. 12% ^ ........ 13 Rotary unit ........ 14 Rotary pick and place device. ............... 20; & Only reverse ......... 30 Connection room ..... .............. 40 Substrate placement area ... 41 Push unit ... .............................................. 42 Valves ... .. 4 4
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