1292440 九、發明說明： 【發明所屬之技術領域】 本發明係為一種磁控射頻電漿源產生裝置，尤 指以射頻電源驅動，使該射頻電漿往單方向擴散， 並使該電漿密度增加。 '月 【先前技術】 如中華民國專利公告200505296號，專利名稱 「向密度電漿反應器」，該高密度電漿反應器係以 射頻電源產生電t、運用磁場來提高電漿密度，、其 磁場建於腔體外，腔體内磁場較弱、電漿密度有 限，且該腔體内建電極將會使電漿向四周擴散。 如中華民國專利公告523786號，該電漿反應 器係運用磁鐵來提高電漿密度，主要運用於晶圓^ 、〔狀為圓環狀，電漿由電極產生後再集中於外側 =鐵與内側磁鐵磁路中，其磁鐵建於環内側的腔體 ，另一建於環外側腔體内，腔體内磁鐵在長時間 使用’可能因溫度升高而消磁。 %荃閱第3圖，一般射頻電漿源產生 8(Chamber)抽至真空環境，充入工作氣體卜 的 2)後’於圓柱狀電極9施加頻率13·56ΜΗζ 柯，頻父流電源1〇，此時電子受電場加速並碰撞中 • &生/紅離，進而產生射頻電漿。因電漿為良 此射頻電場於電漿中強度呈指數下降，其電 1292440 K刀佈區域11為一沿電極面向四周擴散，而真空 月工體8中電子受此電場加速而獲得能量直 體=擴散，行進中與各種粒子發生碰撞:、其； ^ π此置電子碰撞中性氣體分子後發生游離反 :’產生更多離子.電子形成電漿狀態。此種射頻 佈廣且分散，平均電漿密度低，對僅需局部 U區被運用時’反而因電㈣度不能集中，大幅 • '低效旎。欲提昇電漿密度往往’需較高工作氣壓 、空中j或增加放電功率，前者氣流量高、成本高 且與低氣壓電漿製程難搭配；後者功率大，電極局 邛占電弧放電機率大，不利於電漿穩定性，因此不 7於維持m理之品質，使大功率耗用成本亦 屯^平行圓柱狀射頻電漿源真空工作氣壓約 ι〇〜1〇-2托爾（t〇rr)，獨立用於電漿活化處理提 供電聚2鍍膜之前處理；而電漿鍍膜真空工作氣壓約 為1 ^〜丨0 torr ’相差一個數量級，因此二者要在 同—系統中搭配同時工作，造成困擾。 目前高分子材料若以電漿活化做鍍膜前處 王、，其電漿產生以電容式射頻放電為主，其電極可 $平行板或圓柱棒，此種電漿源，已如前述電漿密 又低^得活化處理效率低’且必須在較高真空氣壓 I才能正常放電’如需與其他後段製程（如鍍膜）配 :成連續型處理裝置（如捲對捲式多重電聚處理腔 系統）時，因工作氣壓差會強烈干擾後段高真空（低 1292440 真空氣壓）電漿處理製程；且若效 長’亦延誤後段製程，不符經濟效:低’工作時間 雖然上述之習知技術，可用射^\ 磁場增加電聚密度，但、：源驅動或以 其它電漿製程搭配率低。故-般二者向 …、法付合使用者於實際使用時之所需。 者係 【發明内容】 度、縮短二Hi的係在於，達到提高電漿密 壓，、、电水活化處理之時間、降低工作真空 果。以及”電漿密度朝產生電漿區域擴散:效 電目：:::係為-種電磁控射頻 路裝置、4。含一外殼、一磁場磁 加爲 'p政熱板、一熱絕緣隔熱板、—固 ::二電極所組成。該農置係以射頻電源驅動二 二 形成一磁場提高該電衆密度，其中哕磁 路！具放電路徑壓制之功能，使該產生= 位二Γ早方向進行擴散。其中，該外殼係接地電 浮二磁電:磁路與冷卻散熱板所組合之環形磁路係 :實施方式】 凊芩閱『第1A、第1B及第1C圖』所示 1292440 為本發明之結構不意圖、本發明之俯視結構示意圖 及本發明之側視結構示意圖。如圖所示：本發明係 為一磁控射頻電漿源產生装置丨，該磁控射頻電漿 源產生裝置1係為一真空腔體’其内部係由一外殼 2、一磁場磁路裝置3、一冷卻散熱板4、一熱絕緣 隔熱板5、一固定架6及一電極7所組成。 該外殼2係須連接地電位，其材㈣為 材料。 該磁場磁路裝置3係由至少1上磁鐵31，則 導磁材料32連接成一门型磁場磁 路衣置3。其中，該導磁材料32係可由至少一以上 之磁鐵31疊加，用以增加磁場強度’該磁鐵31最 加數目多首其磁場強度越強，電聚密度越高，； 低工作時之真空氣壓。 幸 板4係為一门型，固 路裝置3上’該冷卻散熱板4係包含至少一以：： 冷卻水官路裝置41及氣體管路裂置仏 丑 熱板4與該磁場磁路襄 〜冷郃散 含-開口結構43,4 口=成一環形磁路，係包 場強度，其中，該 狀。該氣體管路裝置42係 ：何形 漿之反應氣體。 D—產生射頻電 用以減少熱傳導影響該磁鐵31 8 1292440 之磁性。 △:亥固定架6係用以固定 冷部散熱板4所组人之戸r 每硌凌置3與该 端係利用至少讀磁路，該固定架6之兩 該電…二絕緣墊片61固定。 定支竿71 ^ 狀’係利用至少—以上之固 〜又木/1固定，名姑 口 l . . „ 在該電極7中心係包含至少一以 上之冷卻水出入口裝置72。 "人 1，lit所述，係構成—磁控射頻電漿源產生裝置 動，以該磁場磁路_置3/1 ㈣射頻電源驅 度，其運作磁場提高該電聚密 場磁路3=該外殼2係連接地電位，該磁 浮接於二恭、、/、忒冷卻散熱板4所組合之環形磁路 冷卻散埶拓4夕人疋於°亥口疋木6上，且利用該 使該〜^ 水管路裝置41引人冷卻水， 架7衣^ 維持常溫；該電極7係利用該固定支 水 壯 〜砸峪円，4電極7中心之冷卻 射皿；並同時導入一射頻電源，係用以引發一 ❿:：：二其中，該射頻電漿產生之位置係位於該 野 衣置3與該冷卻散熱板4所組合之環形磁 叫之開口 * 士 ★签」，上 善目 處。其中，該磁場磁路裝置3係 &放电路徑壓制之功能，可使該射頻電漿係以單 =(產生電聚區域)擴散。請參閱『第2圖』所示， '、本發明之雙電極磁控射頻電漿源產生裝置結 1292440 才誇 丁 Vr 產/、固如圖所示··係包含二組磁控射頻電漿源 雔2衣置I，其中各包含一電極7 ,係構成另一具 又屯極之磁控射頻電漿源產生裝置。 丄V、上所述，本發明磁控射頻電漿源產生裝置可 有，改善習用之種種缺點，可提高電漿密度，縮短 電漿活化處理之時間，降低工作真空氣壓，以及集 中電漿密度朝產生電漿區域擴散之效果，進而使本 創作之産生能更進步、更實用、更符合使用者之所 須，確已符合發明專利申請之要件，爰依法提出專 利申請。 惟以上所述者，僅為本發明之較佳實施例而 已，當不能以此限定本發明實施之範圍；故，凡依 本發明申請專利範圍及創作說明書内容所作之^ 單的等效變化與修飾，皆應仍屬本發明專利涵蓋: 範圍内。 盍之 1292440 【圖式簡單說明】 第1 A圖，係本發明之結構示意圖。 第1B圖，係本發明之俯視結構示意圖。 第1 C圖，係本發明之側視結構示意圖。 第2圖，係本發明之具雙電極之磁控射頻電漿源 產生裝置結構示意圖。 > 第3圖，係習用之結構示意圖。 【主要元件符號說明】 (本創作部份） 磁控射頻電漿源產生裝置1 外殼2 磁場磁路裝置3 磁鐵31 導磁材料32 冷卻散熱板4 冷卻水管路裝置41 氣體管路裝置42 開口結構43 一 熱絕緣隔熱板5 固定架6 電絕緣墊片61 電極7 1292440 固定支架71 冷卻水出入口裝置72 (習用部份） 真空腔體8 圓柱狀電極9 . 射頻交流電源10 電漿分佈區域111292440 IX. Description of the Invention: [Technical Field] The present invention relates to a magnetically controlled radio frequency plasma source generating device, in particular to a radio frequency power source, which diffuses the radio frequency plasma in a single direction and makes the plasma density increase. 'Monthly [Prior Art] For example, the Republic of China Patent Publication No. 200505296, the patent name "Density Plasma Reactor", which uses the RF power source to generate electricity, uses a magnetic field to increase the plasma density, and The magnetic field is built outside the cavity, the magnetic field in the cavity is weak, the plasma density is limited, and the electrode built in the cavity will spread the plasma around. For example, in the Republic of China Patent Bulletin No. 523786, the plasma reactor uses magnets to increase the plasma density. It is mainly used in wafers, [in the form of a ring, and the plasma is generated by the electrodes and then concentrated on the outside = iron and inner side. In the magnetic circuit of the magnet, the magnet is built in the cavity inside the ring, and the other is built in the outer cavity of the ring. The magnet in the cavity is used for a long time 'may demagnetize due to temperature rise. % Refer to Figure 3, the general RF plasma source is generated by 8 (Chamber) pumping to a vacuum environment, and after charging 2) of the working gas, the frequency is applied to the cylindrical electrode 9 at a frequency of 13.56 柯, and the frequency of the parent frequency is 1 〇. At this time, the electrons are accelerated by the electric field and collide with the & raw/red, which produces radio frequency plasma. Because the plasma is good, the intensity of the RF electric field decreases exponentially in the plasma, and the electric 1292440 K knife area 11 is diffused along the electrode surface, and the electrons in the vacuum moon body 8 are accelerated by the electric field to obtain the energy straight body. = diffusion, colliding with various particles in the process of travel: ^; π This electrons collide with neutral gas molecules and then undergo a free reverse: 'generate more ions. The electrons form a plasma state. This type of radio frequency is widely distributed and dispersed, and the average plasma density is low. When only the local U area is used, the power can not be concentrated due to the power (four degrees), and the 'inefficiently low'. In order to increase the plasma density, it is often required to have a higher working pressure, air j or increase the discharge power. The former has a high gas flow rate and a high cost, and is difficult to match with a low-pressure plasma process; the latter has a large power, and the electrode has a large arc discharge probability. It is not conducive to the stability of the plasma, so it is not 7 to maintain the quality of the m, so that the high power consumption cost is also 屯^ parallel cylindrical RF plasma source vacuum working pressure about ι〇~1〇-2Tor (t〇rr ), used independently for plasma activation treatment to provide electropolymerization 2 coating before treatment; while plasma coating vacuum working pressure is about 1 ^~丨0 torr 'the difference is an order of magnitude, so the two should work together in the same system. Causing distress. At present, if the polymer material is activated by plasma activation, the plasma is mainly made up of capacitive RF discharge, and the electrode can be parallel plate or cylindrical rod. The plasma source is as dense as the above-mentioned plasma. It is also low in activation efficiency and must be discharged at a higher vacuum pressure I. If it needs to be matched with other back-end processes (such as coating): it is a continuous processing device (such as a roll-to-roll multi-electropolymer processing chamber system). When the working pressure difference will strongly interfere with the post-stage high vacuum (low 1292440 vacuum pressure) plasma treatment process; and if the effect length 'also delays the back-end process, does not match the economic efficiency: low 'working time, although the above-mentioned conventional technology is available The ^\ magnetic field increases the density of the electric charge, but: the source drive or the other plasma process has a low matching rate. Therefore, the two are intended to be used by the user in actual use. [Description of the Invention] The degree of shortening the Hi-Hi is to increase the plasma pressure, the time during the activation of the electro-hydraulic treatment, and the reduction of the working vacuum. And "the plasma density spreads toward the plasma region: the power source:::: is a kind of electromagnetic control RF circuit device, 4. It contains a casing, a magnetic field is added as a 'p-hot plate, a thermal insulation. The hot plate, the solid: two electrodes are formed. The agricultural system is driven by a radio frequency power source to form a magnetic field to increase the density of the electric power, wherein the magnetic circuit has the function of suppressing the discharge path, so that the generation = bit Γ Diffusion in the early direction. The outer casing is grounded, electrically floating, and two magnetic circuits: the magnetic circuit of the magnetic circuit and the cooling plate: Embodiments] See 1292440 shown in "1A, 1B, and 1C" The structure of the present invention is not intended to be a schematic view of the structure of the present invention and a schematic view of the side view of the present invention. As shown in the figure, the present invention is a magnetically controlled radio frequency plasma source generating device, the magnetically controlled radio frequency plasma source. The generating device 1 is a vacuum chamber. The interior thereof is composed of a casing 2, a magnetic field magnetic circuit device 3, a cooling heat sink 4, a thermal insulation panel 5, a fixing frame 6 and an electrode 7. The outer casing 2 is connected to the ground potential, and the material (4) is made of material. The field magnetic circuit device 3 is composed of at least one upper magnet 31, and the magnetic conductive material 32 is connected to form a gate type magnetic field magnetic circuit device 3. The magnetic conductive material 32 may be superposed by at least one or more magnets 31 for increasing the magnetic field. Strength 'The most number of magnets 31, the stronger the magnetic field strength, the higher the density of electropolymerization; the vacuum pressure during low working hours. Fortunately, the 4 series is a door type, and the cooling device 4 on the fixing device 3 The system comprises at least one of: a cooling water official road device 41 and a gas pipeline rupture 仏 ugly hot plate 4 and the magnetic field magnetic circuit 襄 ~ cold 郃 bulk-opening structure 43, 4 ports = a ring magnetic circuit, a package Field strength, wherein, the gas line device 42 is: the reaction gas of the slurry. D—generating radio frequency electricity to reduce the heat conduction affecting the magnetism of the magnet 31 8 1292440. △: Hai fixed frame 6 is used for The group of the fixed cold section heat sink 4 is 硌r. Each of the ridges 3 and the end system utilizes at least a read magnetic circuit, and the two of the holders 6 are fixed by the two insulating spacers 61. The fixed support 71 ^ shape Use at least - above the solid ~ and wood / 1 fixed, named Gukou l . . „ at the electrode 7 Heart comprising a cooling water inlet and outlet to at least one of the device 72. "human 1, lit, the composition - the magnetically controlled RF plasma source generating device moves, the magnetic field magnetic circuit _ set 3 / 1 (four) RF power drive, its operating magnetic field increases the electric polycondensation field magnetic circuit 3 = The outer casing 2 is connected to the ground potential, and the magnetic floating connection is connected to the annular magnetic circuit of the two cooling, heat sinking plates 4, and the cooling circuit is cooled on the 亥 疋 4 ° ° ° ° ° The water pipe device 41 is introduced into the cooling water, and the frame 7 is maintained at a normal temperature; the electrode 7 is cooled by the fixed branch water, the electrode of the 4 electrode 7 center; and an RF power source is simultaneously introduced. The system is used to trigger a ❿::: 2, wherein the position of the radio frequency plasma is located in the ring-shaped magnetic opening of the combination of the field device 3 and the cooling heat sink 4 * At the office. Wherein, the function of the magnetic field magnetic circuit device 3 & discharge path suppression allows the radio frequency plasma system to diffuse in a single = (generating electropolymerization region). Please refer to the "Fig. 2", ', the two-electrode magnetically controlled RF plasma source generating device of the present invention 1299240 is only quarted Vr production / solid as shown in the figure · contains two sets of magnetically controlled RF plasma The source device 2, which each includes an electrode 7, constitutes another magnetically-controlled radio frequency plasma source generating device.丄V, above, the magnetron RF plasma source generating device of the present invention can improve various disadvantages of the conventional use, increase the plasma density, shorten the time of plasma activation treatment, reduce the working vacuum pressure, and concentrate the plasma density. The effect of the spread of the plasma area, which makes the creation of this creation more progressive, more practical, and more in line with the needs of the user, has indeed met the requirements of the invention patent application, and filed a patent application according to law. However, the above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto; therefore, the equivalent changes of the scope of the patent application and the content of the invention are Modifications shall remain within the scope of the invention:盍之 1292440 [Simple description of the drawings] Figure 1A is a schematic view of the structure of the present invention. Fig. 1B is a schematic plan view of the present invention. Figure 1C is a schematic side view of the present invention. Fig. 2 is a schematic view showing the structure of a magnetron-controlled radio frequency plasma generating device having a two-electrode according to the present invention. > Figure 3 is a schematic diagram of the structure of the application. [Main component symbol description] (This creation part) Magnetron RF plasma source generator 1 Housing 2 Magnetic field magnetic circuit device 3 Magnet 31 Magnetic material 32 Cooling heat sink 4 Cooling water line device 41 Gas line device 42 Opening structure 43 A thermal insulation board 5 Fixing frame 6 Electrical insulation gasket 61 Electrode 7 1292440 Fixing bracket 71 Cooling water inlet and outlet device 72 (conventional part) Vacuum chamber 8 Cylindrical electrode 9. RF power supply 10 Plasma distribution area 11
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