1355866 九、發明說明： 【發明所屬之技術領域】 本發明係一種材料表面處理之大氣電聚反應裝 置尤扣種可提升材料表面性能之雙電源組合之大 氣電漿反應裝置。 【先前技術】 電槳為離子、電子、中性原子、受激原子及各種 • 游離基所組成之準電中性（QuaSi_natura丨）氣體，由於 該電水本身具有相當高之能量及活性與一般化學或 其他加工方式相比，具有節省能源、速度快、節省材 料及珲境污染小等優點，因而在工業生產及民生應用 上被廣泛使用，也因此各式各樣低氣壓電漿反應器， 諸如直流（DC )電容式放電、射頻（RF )電容式放電、 感應輕合電聚（Inductively Coupled Plasma，ICP )、電 子迴轉共振（Electron Cyclotron Resonance, ECR )、磁 •. 控濺射及陰極電弧等電漿反應器被提出。 一大氣壓介電質障壁放電（Dielectric Barrier Discharge，DBD)電漿反應器，其至少需有一介電質 P早壁存在於二放電電極間’並以交流或脈衝高壓電驅 動’如先前發明US5387842、US5414324等。然而在 利用此電漿反應器時被處理工件置於放電區間中，因 此產生了下列缺點： (1 )工件容易被電漿反應器中之帶電荷粒子轟 1355866 擊造成損傷； (2)擊打工之正離子能量無法控制； r ( 3 )電漿反應器因工件置入而影響其電漿放電 行為，造成不均勻.放電；以及 (4 )製程中發生不均勻絲狀放電時絲狀電漿 直接擊打至工件表面會造成損傷或不均勻表面處理。 (5)製程中可調之參數範圍受到相當之限制。 故’一般習用者係無法符合使用者於實際使用時 之所需。 【發明内容】 本發明之主要目的係在於’藉由 偏壓電源電極等雙電泝組入而占# 丁板電極與 或直接綱^ 其可控子能量 ^接湘由平面大氣電漿由氣流帶出不帶 =由基來改善並增特料表面處理效能 處 :=::r之編達到較佳“活化= 本發明之另一目的係在於 源大新雷將卢柿抽座 j肝具組合成雙電漿 理，不時進行平面材料雙面表面處 理迷Γγ 大厚度之平面付料，更可加快其處 1355866 為達以上之目的，本發明係一種大氣電製反應裝 置’係至少包含有一高壓電極、一共接地電極、一偏 壓電極及至V 電質層所構成。如圖^先將—工件 .1於-電漿處理室中’該電漿處理室係配備有一高壓 電源供應器、-偏壓電源供應器及—接地端，藉通入 -反應氣體至該高壓電極與該共接地電極中以產生一 平面大氣電漿。同時，由該偏壓電源供應器提供一負 電壓吸引該高壓電源供應器所產生之平面大氣電漿中 I 之離子。 如圖3另一型電聚反應器中，其中之不帶電之自 由基（Radical)《反應物由氣流帶動，並經偏壓電極 上複數個洞孔流出至工件表面，以對平面工件作單面 處理或鑛膜。另-方面本發明亦可將其組合成雙電浆 源以進行雙面同時表面處理，如此同時處理平面工件 正反二面，·另若二組電漿源以不同反應氣體充入時， 也可達成正反二面之不同處理效果。 【實施方式】 *月參閱『第1圖〜第5圖』所示’係、分別為本發 明之第一實施例示意圖、本發明之第二實施例示 圖、本發明之第三實施例示意圖及本發明之偏壓電= 結構示意圖。如圖所示：本發明係一種大氣電漿反應 裝置，本發明之大氣電漿反應裝置1係至少包含有一 高壓電極1 1、一共接地電極i 2、_偏壓電極工3 7 1355866 及至少一介電質層1 4所構成，其中偏壓電源可控制 離子轟擊工件能量，改善並增進材料表面處理效能， 以減少處理時所造成材料表面之損傷而達到較佳表面 活化、清潔及鍍膜之功效，並可加快其處理速度。 該高壓電極1 1係電性連接一交流Ac、脈衝或 RF高壓電源供應器。 一該共接地電極1 2係電性連接一接地端，且與該 • 尚壓電源11係用以在一電漿處理室内產生放電生成 一平面大氣電漿2。 該偏歷電極13係電性連接一偏壓電源供應器， 用以產生-偏壓源，可在該電聚處理室之放電氣隙吸 引該平面大氣電漿2中之離子。 该介電質層14係用以產生放電時抑制電弧放電 • f生。以上所述，係構成一全新之大氣電I反應裝置 t本發明於運用時，係將—卫件3置於— 理室中其材料可為全屬古 ^ =至係配備有高愿電源供應器、偏壓電源供" 1二：接：：屋電源供應器電性連接高壓電極1 ^而、接地電極連接至該接地端。藉通入— 體至高壓電極1:1盥妓接岫 反應軋 …接地電極12由介電質層14在錢處理室之 表面產生—平面大氣電漿2。同時，由偏壓電源 供應器電性連接該偏墨電極1 3，使偏壓電極i 3在 =電聚處理室吸引該平面大氣電聚2中之離子及產生 偏^，由電壓大小可控制並調整該離子轟擊該工件 3之犯I大小，而在擴散式電漿反應器當中，其組成 之帶電離子、不帶電之自由基（Radica。或反應物經 由$宜之碰撞’可由偏壓電極1 3上複數個洞孔工3 1流出對該工件3作單面處理或鑛膜，因此使本發明 !大氣電漿反應裝置1除了能減少對工件3表面之破 壞外，亦使木發明可達到表面活化 '清潔及鍍膜之功 效。 。月參閱『第5圖』所示，係為本發明之第四實施 例不思圖。如圖所示：本發明之大氣電漿反應裝置係 可與另一大氣電漿反應裝置進一步組合成具第一面5 1及第二面5 2之雙電漿源大氣電漿反應裝置5，將 一工件4置於該第一面5 1及第二面5 2間，藉由通 入第反應氣體至該第一面51之高壓電極511 與共接地電極5 1 2中，使該高壓電極5 1 1與該共 接地電極5 1 2由該介電質層5丄4在一電漿處理室 之放電氣隙產生一第一平面大氣電漿5丄丄丄，並由 該第一面之偷壓電極513在該電漿處理室之放電氣 隙吸引δ玄第一平面大氣電漿5 1 1 1中之離子及產生 一第一偏電漿。同時，通入一第二反應氣體至該第二 1355866 面”之高壓電極5 2工與共接地電極5 2 2中使 該同壓電極5 2 1與該共接地電極5 2 2由該介電質 層5 2 4在該電衆處理室之放電氣隙產生一第二平面 大氣電聚5211，並由該第二面52之偏壓電極5 2 3在該電漿處理室之放電氣隙吸引該第二平面大氣 $漿5211中之離子及產生一第二偏電漿如此而 組合後之雙電漿源大氣電漿反應裝置5係可對該 工件4進行雙面同時表面處理，不但可處理較大厚度 之材料更可加快其處理速度。故本發明之大氣電聚 反應裝置係可組合成雙面之大氣電聚反應裝置。嗜本 例亦可不加偏壓電極5 2 3也可進行雙面材料表面處 理。 ▲，’T、上所述，本發明係一種大氣電漿反應裝置，可 :文改。I用之種種缺點，藉由一平行板電極與偏壓 •源電極等雙電源組合’可控制離子能量或直接利用 =性自由基來改善並增進材料表面處理效能以減少 :理時所造成材料表面之損傷而達到較佳表面活化、 〉月，及錢膜之功效，進而使本發明之産生能更進步、 更實用、更#合使用者之所須，確已符合發明專利申 請之要件，爰依法提出專利申請。 本准以上所述者’僅為本發明之較佳實施例而已， :不月b以此限定本發明實施之範圍；&，凡依本發明 。月專利圍及發明說明書内容所作之簡單的等效變 1355866 化與修飾，皆應仍屬本發明專利涵蓋之範圍内。 1355866 【圖式簡單說明】 第1圖，係本發明之第一實施例示意圖。 第2圖，係本發明之第二實施例示意圖。 r • 第3圖，係本發明之第三實施例示意圖。 第4圖，係本發明之偏壓電極結構示意圖。 第5圖，係本發明之第四實施例示意圖。 【主要天> 件符號說明】 • 大氣電漿反應裝置1 南壓電徑1 1 共接地電極1 2 偏壓電極13 打洞孔1 3 1 介電質層1 4 I 平面大氣電漿2 工件3 工件4 雙電漿源大氣電漿反應裝置5 第一面5 1 高壓電極5 1 1 ' 第一平面大氣電漿5 1 1 1 12 1355866 共接地電極512 偏壓電極5 1 3 介電質層5 1 4 第二面5 2 高壓電極5 2 Γ 第二平面大氣電漿5 2 1 共接地電極5 2 2 偏壓電極5 2 3 介電質層5 2 41355866 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to an atmospheric electro-polymerization device for surface treatment of a material, in particular, a gas-electrical plasma reaction device capable of improving the surface properties of a material. [Prior Art] The electric paddle is a quasi-neutral (QuaSi_natura) gas composed of ions, electrons, neutral atoms, excited atoms and various radicals. Since the electro-hydraulic itself has a relatively high energy and activity and general Compared with chemical or other processing methods, it has the advantages of energy saving, fast speed, material saving and low environmental pollution. Therefore, it is widely used in industrial production and people's livelihood applications, and therefore various low-pressure plasma reactors. Such as direct current (DC) capacitive discharge, radio frequency (RF) capacitive discharge, Inductively Coupled Plasma (ICP), Electron Cyclotron Resonance (ECR), magnetic controlled sputtering and cathodic arc An equal plasma reactor was proposed. A large-capacity Dielectric Barrier Discharge (DBD) plasma reactor, which requires at least one dielectric P, the early wall exists between the two discharge electrodes and is driven by alternating current or pulsed high voltage. As previously disclosed, US5387842 , US5414324 and so on. However, when the plasma reactor is used, the workpiece to be processed is placed in the discharge section, thus causing the following disadvantages: (1) the workpiece is easily damaged by the charged particle bomb 1355866 in the plasma reactor; (2) hitting The positive ion energy cannot be controlled; r (3) the plasma reactor affects the plasma discharge behavior due to the placement of the workpiece, resulting in uneven discharge; and (4) filamentous plasma when uneven filamentous discharge occurs in the process Direct hitting to the surface of the workpiece can result in damage or uneven surface treatment. (5) The range of parameters that can be adjusted in the process is quite limited. Therefore, the general practitioners cannot meet the needs of the user in actual use. SUMMARY OF THE INVENTION The main object of the present invention is to 'by the bias power supply electrode and the like to double-trace the input into the D-plate electrode and or directly to control the energy of the device. Bring out without = = improve by the base and increase the surface treatment efficiency: =:: r is better to achieve "activation" Another purpose of the present invention is that the source of Daxin Lei will be persimmon pumping j liver Synthetic double-electrochemical pulping, from time to time, the double-sided surface treatment of the planar material is used to treat the large thickness of the Γγ, and the light can be accelerated to the above level. The present invention is an atmospheric electric reaction device. A high voltage electrode, a common ground electrode, a bias electrode and a V-electrode layer are formed. As shown in the figure, the workpiece is placed in a plasma processing chamber, and the plasma processing chamber is equipped with a high voltage power supply. a bias power supply and a grounding terminal for introducing a reactive gas into the high voltage electrode and the common ground electrode to generate a planar atmospheric plasma. Meanwhile, the bias power supply provides a negative voltage to attract the Produced by high voltage power supply The ion of I in the plane atmospheric plasma. As in the other type of electropolymerization reactor of Fig. 3, the uncharged free radical (Radical) "reactant is driven by the gas stream and flows out through a plurality of holes in the bias electrode. To the surface of the workpiece, for single-sided processing or mineral film on the planar workpiece. In addition, the present invention can also be combined into a dual plasma source for simultaneous double-sided surface treatment, so that the front and back surfaces of the planar workpiece are simultaneously processed. In addition, if the two sets of plasma sources are charged with different reaction gases, the different treatment effects of the front and back sides can also be achieved. [Embodiment] *The month refers to the "systems shown in Figure 1 to Figure 5". A schematic diagram of a first embodiment of the present invention, a second embodiment of the present invention, a schematic view of a third embodiment of the present invention, and a bias current = structure diagram of the present invention. As shown in the figure: the present invention is an atmospheric plasma reaction. The apparatus of the present invention comprises at least one high voltage electrode 1 1 , a common ground electrode i 2 , a bias electrode 3 7 1355866 and at least one dielectric layer 14 , wherein the bias power supply Controllable ion bombardment The energy of the workpiece improves and enhances the surface treatment efficiency of the material to reduce the surface damage caused by the treatment to achieve better surface activation, cleaning and coating effects, and accelerate the processing speed. The high voltage electrode 1 1 is electrically connected. An AC, pulse or RF high voltage power supply. The common grounding electrode 12 is electrically connected to a grounding end, and is connected to the voltage source 11 for generating a discharge in a plasma processing chamber to generate a planar atmosphere. The plasma electrode 13 is electrically connected to a bias power supply for generating a bias source for attracting ions in the planar atmospheric plasma 2 in a discharge air gap of the electropolymerization chamber. The dielectric layer 14 is used to generate an arc discharge during discharge. The above is a new atmosphere electric reaction device. The invention is used in the present invention. The material in the room can be all of the ancient ^ ^ to the system is equipped with a high power supply, bias power supply for "1 2: connect:: the house power supply is electrically connected to the high voltage electrode 1 ^, the ground electrode is connected to The ground terminal. By means of the inlet - body to the high voltage electrode 1:1 junction 岫 reaction rolling ... the ground electrode 12 is produced by the dielectric layer 14 on the surface of the money processing chamber - planar atmospheric plasma 2 . At the same time, the biasing power supply is electrically connected to the ink electrode 13 to make the bias electrode i 3 attract the ions in the planar atmospheric electricity 2 in the electropolymerization processing chamber, and generate a bias, which can be controlled by the voltage. And adjusting the ion bombardment of the workpiece 3 by the I size, and in the diffusion plasma reactor, the charged ion, the uncharged radical (Radica. or the reactant via the collision) can be biased electrode 1 3 multiple holes 3 1 outflow to the workpiece 3 for single-sided treatment or mineral film, thus making the invention! In addition to reducing the damage to the surface of the workpiece 3, the atmospheric plasma reactor 1 also enables the invention of wood The effect of surface activation 'cleaning and coating is achieved. The month is shown in Figure 5, which is a fourth embodiment of the present invention. As shown in the figure: the atmospheric plasma reactor of the present invention can be combined with Another atmospheric plasma reactor is further combined into a dual plasma source atmospheric plasma reactor 5 having a first surface 51 and a second surface 52, and a workpiece 4 is placed on the first surface 51 and the second surface. Between 5 and 2, a high voltage electrode is passed through the first reaction gas to the first surface 51 511 and the common ground electrode 51 1 2, the high voltage electrode 5 1 1 and the common ground electrode 5 1 2 are generated by the dielectric layer 5丄4 in a discharge air gap of a plasma processing chamber to generate a first planar atmosphere The plasma is 5 丄丄丄, and the first surface of the smashing electrode 513 attracts the ions in the first plane atmospheric plasma 5 1 1 1 in the discharge air gap of the plasma processing chamber and generates a first bias At the same time, a second reaction gas is introduced into the second high-voltage electrode of the second 1355866 surface and the common ground electrode 52 2 to make the same electrode 5 2 1 and the common ground electrode 5 2 2 The dielectric layer 524 generates a second planar atmospheric electricity 5211 in the discharge air gap of the electricity processing chamber, and the bias electrode 5 2 3 of the second surface 52 is placed in the plasma processing chamber. The electric gap attracts the ions in the second planar atmosphere (the slurry 5211 and generates a second partial plasma), and the dual plasma source atmospheric plasma reactor 5 can simultaneously and simultaneously treat the workpiece 4 on both sides. Not only can the material of a large thickness be processed, but the processing speed of the material can be accelerated. Therefore, the atmospheric electropolymerization device of the present invention can be combined into two sides. Atmospheric electropolymerization reaction device. In this case, the surface treatment of the double-sided material can also be performed without biasing the electrode 5 2 3. ▲, 'T, above, the present invention is an atmospheric plasma reaction device, which can be: I. The shortcomings of I use a parallel plate electrode combined with a bias/source electrode and other dual power supplies to control ion energy or directly use = free radicals to improve and improve the surface treatment efficiency of materials to reduce: Injury to the surface of the material to achieve better surface activation, , and the effect of the money film, so that the production of the present invention can be more advanced, more practical, and more suitable for the user, and has indeed met the invention patent application. In the above, the above-mentioned patent application is only for the preferred embodiment of the present invention, and the scope of the present invention is limited to the scope of the present invention; & The simple equivalents of the patents and the contents of the inventions are still within the scope of the invention. 1355866 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a first embodiment of the present invention. Fig. 2 is a schematic view showing a second embodiment of the present invention. r • Fig. 3 is a schematic view of a third embodiment of the present invention. Fig. 4 is a schematic view showing the structure of a bias electrode of the present invention. Figure 5 is a schematic view of a fourth embodiment of the present invention. [Main day > symbol description] • Atmospheric plasma reactor 1 South piezoelectric diameter 1 1 Common ground electrode 1 2 Bias electrode 13 Hole 1 3 1 Dielectric layer 1 4 I Planar atmospheric plasma 2 Workpiece 3 Workpiece 4 Double plasma source Atmospheric plasma reactor 5 First side 5 1 High voltage electrode 5 1 1 ' First plane atmospheric plasma 5 1 1 1 12 1355866 Common ground electrode 512 Bias electrode 5 1 3 Dielectric layer 5 1 4 Second side 5 2 High voltage electrode 5 2 Γ Second plane atmospheric plasma 5 2 1 Common ground electrode 5 2 2 Bias electrode 5 2 3 Dielectric layer 5 2 4