201239981 六、發明說明： 【發明所屬之技術領域】 本發明為一種電漿製程設備，適用於線性連續腔體（In_line^t電漿製 程(Plasma process)，它具有降低流入基材瞬間電流的功能，並且能夠控 制電聚加諸於基材上的偏壓，@此祕縣材表面，特職合作為乾姓刻 製程（dry etching)之用；其它非使用電漿作為乾蝕刻製程之用者（如 PECVD ’電聚輔助化學洛氣蒸鍵），或使用電聚但不是作錄膜使用者(如電 漿清潔，plasma dean)等等’亦可應用本發明，使其同時俱備高效率的電漿 輔助製程與其它的特點。 【先前技術】 傳統的線性連續腔體（In-1 ine)電漿製程鍍膜系統，由於產量大，使用 的基材（substrate)面積亦大，被廣泛地使用在許多製程上（如：透明導電氧 化物TC0贿製程、化學蒸氣蒸鍵、㈣膜製程、彩色膜麟製程、以及 電磁波隔絕層EMI贿製程等等）。其機台設計可概分為直立式與水平式兩 種使用的電激-般分為直流(DC) '脈衝直流(puise pc)、射頻(即，例 如頻率在13. 56 MHz、27·12舰及60MHz等等）、DC+RF混合模式電波、 中頻(MF ;例如：頻率約為數百kHz)或獅c混合模式電波等等。這些傳统 的技術不論是直立歧者是水平式的，DC或RF的，都有—個基本限制，那 就是裝設在真空賴的電極（―般是躲材、平板電極❹孔的氣體喷頭 (shower head)等等，必須使基材與腔體電性隔絕 —ated) ’如此找使受電漿轟擊的紐表面制穩定的物理與1^性y 質。例如’麵II (sputtering depGsitiGn)時，當極高的雙導 的瞬間會有高的電流赴，這職台本身或是紐都是不利的。因 201239981 此傳u者多將基材設計成與腔體和姆均不電性連通，以利於整個 機D的電感II趨於安定，如此則基材表面不會吸引高能量的電子或離子， 甚，被匕們轟擊而損傷，甚至毀壞。此種安排對麟賴亦有利，因為少 了離子的躲，其微結構(如晶粒的結晶方向）减於變化過大，使得其均 勻陡(如電啤，補率料)得轉持在—蚊範圍之内。過去將近半世 、、己w樣的叹计已廣被接受，例如，台灣的富林、曰暘、燦元；美國的狀τ; 々日本的Ulvac ;韓國的;德國的〇eriito、^細]及v加她⑽ * P疋將基材置於電性絕緣狀態（EleetriGaiiyn），然後實施電 漿製程的。 、 、值得注意喊，上述絕緣的方法，實施起來並不容易，而且有兩個主 a、帛，由於34些機台是線性連續式的’它們的傳動系統與基材 (meehanieally e购⑷，欲制使紐電性絕緣之目 、说必搞機械傳動機制的基材承接模組的電性絕緣性—併考慮進去， 、丄此則&加了恨多設計上的困難度。第二，近年來隨著舰卫業的發展， '言，、方去（亦即70全將基材電性隔絕）的製程空間經常不敷使用，因為-^與電極電性隔絕的基材是無法輕易改變其上的偏壓的。例如，某些特別 需要藉離子絲_整基材與賴之_性能的顧，常受限於基材上的 電’灵偏壓不成輕易獲得調整的基本限制（因為基材已經a如心… ^loat^d) ’料職好的效果。黏紐(她即為—鴨例子。對許 又膜而„，|占著性的大小扮演著製程成敗關鍵的角色。基材與鑛膜 勺黏著f生的獲传’主要來自兩者間的凡德瓦引力（細& ^al’ s ^)，此種引力在奈米的距離之内非常的強大，其它的作用至少還包括 频性的M_e(細⑻inteHQG_。，此二者(凡德瓦引力與 父互綷鎖）均與表面的潔淨度與粗糙度有關。值得注意的是，表面粗链度的 201239981 任2改=’即使看似非f輕微’都可以改變這種凡德瓦引力的大小，故常 使付黏著力轉之改變。其結果是，如果界面提供邮著力不夠，鍵上去 的薄膜最後仍會與基材分離(Delami瞻d)。使用電槳裡的離子對紐表面 作輕微的轟擊，除了可對基材材料表面進行清潔，並且能調整其粗链度， 故可達到控制黏著性的效果，這比起使賴雜的化學方法好得只許多汗染 物用化學方法清洗到ppb或卿程度並不容易，或者成本高昂）。除了黏著 性之外，金屬膜的色澤亦常受電毁偏壓影響，在乾_製程裡，電漿的偏 壓與微来尺寸下的垂直壁_斜度有關，在電漿獅化學絲蒸鑛製程 裡，電漿的偏壓與微米尺寸下的垂直壁面的塗敷厚度〇.己步階表面垂直 區塗佈厚度，step coverage)有關。縱觀以上所述，現今之線性連續腔體 製程系統（In-line process system)需要一個解決方案，使得鍍膜的微結 構，以及鍍膜與基材間之界面等等，能穩健地獲得調整，進而提昇其整體 的性能。 圖一為傳統線性連續腔體的設計法。這是一個水平式線性連續腔體製 程系統上數個形狀類似的腔體其中的一個(直立式緣示於圖十三，其基本原 理相同）。如圖一所示，腔體(100)頂部的内底面於接設有一上電極(193)， 使上電極(193)位於基材載具(120)的上方，該腔體(100)接設有電源供應器 (power supply) (195) ’ 上電極(193)與電源供應器(p0wer supply) (195)電性連 接，另設有一進氣口（192)，而於腔體(1〇〇)底部設有一抽氣閘門(17⑺並配 設連結一真空幫浦(180)’於腔體(1〇〇)左側處設有左入口（11〇)並配設有閘門 (150)，可將基材(1%)自外部傳入，而於腔體(100)右側處設有一右出σ(13〇) 並配設有閘門(160)’可將基材(196)傳出，另於腔體(1〇〇)内置設有傳動裝 置(140) ’可使基材載具(120)順利到達一預定之位置。 201239981 當使用者欲執行製程時，閘門(15_〇6〇)的左、右人口⑴〇)、（13〇) 封閉，此時抽氣閘門(170)由⑽a)的位置移至⑽b)位置而形成開啟狀態， 隨即由真空幫浦(180)將腔體(1〇〇)内部之大氣空氣(19〇)抽至一特定真空值 (19〇a)，使用者此時可將製程氣體(丨9〗)由進氣口^%)導入腔體(1〇…内，待 肽體(100)内壓力到達一特定壓力值(隱)時，使用者將電源供應器(奶） 【電源供應器(powersupply)可以是0(3、处或其它型式本實施例以处 作說明】的電波送入上電極(193)，此時電漿被引發(strikeon),基材(196) 在接又电漿的轟擊-段時間後，表面性質達到—特定條件(例如黏著性改 善），製程得以結束。由於傳統線性連續腔體系統㈤ineproces等㈣將 基材載具(120)與傳動裝置(丨如)連結，使得大電流(197)難以斷絕，尤其是 當使用高頻(〜MHz)的電源、時，上述的電流更難完全斷絕，且必須將機械傳 送機構的基材承接模組的電性絕緣性—併考慮進去，此種_可以由圖三 示出。 圖二與圖一大致相同’但圖三所表示的是電漿剛被點起時(或者是電漿 不L疋’產生電弧放電arcing時)的情況，當大電流(197)產生時，其傳導 至地面之路徑甚多’它們至少包括(197a)、（197b)、（197e)錢(酬），實 際貫她It況裡除了包括傳送機構(1ζκ))的漏電路徑外，還包括許多其它的路 k ’此圖為求簡化說明’並未繪*，但其原理相@，如欲阻斷此些為數不 明(但可以甚多)的對地漏電路徑，增加了好設計上的困難度。 【發明内容】 如别述’傳統設計方法欲達到使基材與腔體電性絕緣之目的，於實際 實紅情况裡除了包括傳動機制的漏電路徑外，還包括許多其它的路徑，如 欲阻斷此些為數不明的對地漏電路徑，增加了很多設計上的困難度。 201239981 本發明將此—問題—併解決’其目的是提供-種有效又«控制的電 漿清潔製程。 本發明為具有控制施於基材上之電漿偏壓能力的線性連續腔體電漿 製程設備，其所運用的技術手段是，當使用者欲進行製程時，將基材載具 與傳動裝置電性脫離，但使其與電源電性連接，如此在進行電漿製程時， 基材載具只與電源電性連通。藉由此種機構配設，使本發明更適用於線性 連續腔體(In-lme)的電漿製程(piasmaprocess)，它具有降低流入基材瞬間電 流的功能，並且能夠控制電漿加諸於基材上的偏壓，因此能保護基材表 面，特別適合作為乾蝕刻製程(dryetching)之用；其它非使用電漿作為乾蝕 刻製程之用者(如PECVD，電漿輔助化學蒸氣蒸鍍），或使用電漿但不是作 鑛膜使用者(如電漿清潔，plasma clean)等等，亦可應用本發明，使其同時 具備高效率的電漿輔助製程與其它的特點為其目的。 【實施方式】 本發明係提供一種具有控制施於基材上之電漿偏壓能力的線性連續腔 體電漿製程設備’請參考圖二，如以射頻電漿清潔製程(RFPlasmaclean process)為一例’腔體(200)為封閉形態，該腔體(2〇〇)頂部設有一進氣口 (292)，而於腔體(2〇〇)底部設有—抽氣閘門(27〇)並配設連結一真空幫浦 (280) ’於腔體(2〇〇)左側處設有左入口(21〇)並配設有閘門(25〇)，可將基材 (296)自外部傳入，而於腔體(2〇〇)右側處設有一右出口(23〇)並配設有閘門 (260) ’可將基材(296)傳出，另於腔體(2〇〇)内置設有傳動裝置(24〇)，可使基 材載具(220)順利到達一預定之位置，該基材載具(22〇)的製作材料的得使用 南導電度之材料(如铭、銅、不銹鋼、鋁合金、銅合金等等）。本發明特點是 將射頻(RF)的電極(211)置於基材載具(22〇)之下【習知技術置於載具上方’ 與其電性分離’其相對關係如圖一中電極(193)與基材載具(120)示】，另外， 201239981 電源t'應(power SUpply) (282)配設有一匹配電路(加)而與電極(川)導接。 田使用者奴執行製程時，間門(25〇)與(遍)將左、右入口(210)、（⑽） 封閉此日寸抽氣問門㈣)的位置由多至(27⑽而形成開啟狀態，隨即 真空幫浦(280)將腔體(200)内部之大氣壓空氣(29〇 )抽至一特定真空值 (294a) ’使用者此時可將製程氣體(291)由進氣口(292)導入腔體()内，待 腔體(2〇0)内到達-特定壓力值(29物)時，使用者將電源供應器⑽Μ可以是 DC RF或其匕型式，本貫施例以处作說明)的電波送入電極pH)，此時 電漿被引發(strike on) ’基材(296)接受一由傳輸線(297)導入的大電流，而其 形成之主要來源為電f；内之離子與電子。圖二中之電極(2u)至少有兩種設 置形態，第一種如圖二A所示，電極(211)昇高至與基材載具(22〇)電性接觸 (211a);第二種如圖二b所示電極(211)下降至與基材載具(22〇)電性分離的 尚度(211b)。再如圖二A所示，當製程啟動時，電極(211)已在口位置， 故射頻電磁波(283)可由電極(211)底部導入，經由電極(211)與基材載具(22〇) 的接點(300)傳入基材載具(220)本體，由於腔體(2〇〇)内有製程氣體(π〗），電 漿因此點燃（plasma strike on)，此時基材載具(220)的上表面置有待清潔基材 (296)，由於其與基材載具(220)和電極(2U)均電性連接，故其表面所感受到 的電漿偏壓，即等於電極(211)所感受到的偏壓，此種偏壓值是可以被射頻 電源供應器(RFpowersupply)(282)直接感受到的，其電流大小亦受到電源 供應器(RF power supply) (282)之控制，因此’使用者可以藉調整電源供應 器(RF power supply) (282)的入射波（incident wave)的能量來調整電衆對被 清潔基材(296)的清潔速率，其上的反射波的相位則由介於電源供應器(Rp power supply) (282)與電極(211)間的匹配電路(Matching netw〇rk)( 281)來調 整。圖二B所示的是製程結束的情形，電極(211)高度下降至高度(2nb)， 與基材載具(220)電性分離’此時基材載具(220)可藉由傳送機構(24〇)離開腔 201239981 體(200)。 再圖A所不，本發明的其中一個實施例，是將基材載具㈣上昇 至一狀高度(2lla)，該高度使得基材載具㈣與傳動裝置(施)脫離如 此在進行電_辦，基材載具_只與電源供應事p_ s卿_2) 連通，但與腔體(200)和傳動裝置_)均為電性絕緣。又如圖二c所示，傳 動裝置(240)上的傳動轉輪(241)使用絕緣材料製作，如此在進行電激製程 夺基材載,、(220)、腔體(2〇〇)與傳動馬達(未繪示)等亦為電性絕緣。再又 士圖一 D所不，基材載具(22〇)與傳動裝置_接觸之處⑽)使用絕緣材料 (如陶究、玻璃、橡膠、鐵氣龍、聚氣乙醯、聚乙醯銨、聚醋、聚尿素、壓 克力或工程塑膠..等等）’如此在進行電毁製程時，基材載具⑽)、腔體阐 與傳動轉輪(241)等亦為電性絕緣。 圖四所示為本發明的變換實施例。在圖二的結構，對較難清理的表面 最為有效(如Si02 ’ Zr02 ’ Ti02膜層料），如果需要清理的表面並不需要 太高能量的離子轟擊，但對均勻性有較高之要求者，可將本發明調整成圖 四形式。其腔體(2〇〇)亦為封閉形態，於腔體(2〇〇)頂部設有一進氣口(292)， 而於腔體(200)底部設有一抽氣閘門(270)並配設連結一真空幫浦(28〇)，於腔 體(200)左侧處設有左入口 (21〇)並配設有閘門(25〇)，可將基材(2%)自外部傳 入，而於腔體(200)右側處設有一右出口(23〇)並配設有閘門(26〇)，可將基材 (296)傳出’另於腔體(2〇〇)内置設有傳動裝置(24〇)，可使基材載具(22〇)順利 到達一預定之位置，電源供應器(p0wer supply) (282)配設有一匹配電路(281) 及電能分岐傳送器（285)(power splitter)而與電極(211)導接。運作時，射 頻電磁波(280)分兩路到達負載，如射頻電磁波(283a)與（283b),射頻電磁 201239981 波⑽a)循-路徑傳人基材載具⑽），射頻電磁波(2陶_另一_傳 入载盤上方之上電極⑵3)，該上電極⑽）能與電聚偶合，使腔體(刻内 帶電離子的濃度保持在-定數值，或者使電毁偏壓值達到一特定需求之 值’如此增加了製㈣穩紐，此萌藉魏分岐傳綠⑽)(p〇wer 印1咖)_整，能讓使用者以不同_的能量傳送電靡卿至基 材載具(220)與上電極⑽），這對於處理有機物如高分子聚合物的表面而 a ’有極大助益（料在提高清潔速率與避免受過激烈軒轟擊之間取得 平衡）’對其它材料而言，本實施㈣具有類似之作用。 圖五所示亦為本發_鐘實_，其結構細二纽侧，不同處 是它的電極(211)附有靜電讀⑽）。在圖二中之紐載具⑽)是藉著重 力與電極(211)接合的，如遇職材(296)或紐載具(22〇)的重於接合 面之外的情況，會導至接觸不良。而圖五所示之靜電吸盤(2⑵可以穩固吸 引住基材載具(220)，降低接合處之阻抗值(Electncal琴d·)，使咫 電磁波更有效地導入電漿。 圖六所示亦為本發明的變換實麵，其結構與圖二大致相同，不同處 在電源供應ϋ(282)為RF1 + DOA合模式(Mixed Mode)機型。它的衍生實施 例逛包括是AC+DC power supply混合模式，該AC的頻率不限定是13. 56 Hz此類的power SUppiy品牌至少包括美國Advanced Energy所產製的 pinnacle power supply等等。圖六的設計能將j)C sputtering的效果也 發揮出來’也同時可藉著加人的RF或AC，使電椠的偏壓適當地下降，讓基 材（296)的表面受到適度但不過度的離子轟擊。 圖七所示亦為本發明的變換實施例，其結構與圖二大致相同，不同的 201239981 是它使用的是帶有冷卻水路(211a)與⑵lb)的電極(211)，如此可使基材載 具(220)的溫度獲得有效控制，對於需要糾間進行的電黯潔製程，抑制 基材（296)之溫度上昇甚為有效。 圖八对不亦為本發明的變換實施例，其結構與圖二大致相同，不同的 是它使用pulse DC power supply的電源供應器（282)，此種脈衝式電磁波 由於瞬間產生的電場甚大，可以對極堅硬或者高介電值之材料進行離子轟 擊。不過當其使用於傳統線性連續腔體系統時（如圖一所示），其缺點是電 聚點起之_容㈣發甚大的接地電流。本發明因能將基職具(22Q)與傳 動裝置（240)電性隔絕，故能全部或局部降低上述的問題。 圖九所不亦為本發明的變換實施例，其結構與圖二大致相同，不同的 是它的上電極（293)用於鍍膜製程，此處上電極可以是一靶材，也可以是一 多孔性電極，以方便導入製程氣體（29丨）進行化學蒸氣蒸鍍，這使得腔體 (200)得以進行雙模製程（如Dep-Etch，deposition-etching)。值得注意的 疋’電源供應器（282)(P〇wer supply)在送電至上電極(293)與基材載具(220) 的路徑上，分別裝有開關（284)與（285)，當某段時間為用於基材（296)表面 處理時(該時間表達為《）’開關（284)閉合，形絲材載具(220)與電源供應 g§(282)(Powersupply)之閉路(e|ectricaiiy cl〇sed),開關⑶打開，上電極 (293)與電源供應器（282)(P〇wer supply)形成開路（eiectrically opened) ’此時射頻電磁波(283)沿路徑(283a)到達翻顧^22Q),而上電彳―^ 細開關(285)為開路(eiectricany Qpened)，不纟電源供應⑽⑵⑻虹201239981 VI. Description of the Invention: [Technical Field] The present invention is a plasma processing apparatus suitable for a linear continuous cavity (In_line^t plasma process), which has the function of reducing the instantaneous current flowing into the substrate. And can control the bias of the electropolymerization on the substrate, @this secret county surface, special cooperation for the dry etching process; other non-use plasma as the dry etching process user (such as PECVD 'Electrical Auxiliary Chemical Loane Steaming Key'), or use electropolymerization but not for film users (such as plasma decan, plasma dean), etc. 'The invention can also be applied to make it highly efficient at the same time Plasma-assisted process and other features. [Prior Art] Traditional linear continuous cavity (In-1 ine) plasma process coating system, due to large output, the substrate used is also large, widely Used in many processes (such as: transparent conductive oxide TC0 bribe process, chemical steam evaporation key, (four) film process, color film process, and electromagnetic wave insulation EMI bribe process, etc.) The electric shocks used in both vertical and horizontal are generally divided into direct current (DC) 'pulse pc, radio frequency (ie, for example, the frequency is 13.56 MHz, 27.12 ship and 60 MHz, etc.), DC +RF mixed mode radio, intermediate frequency (MF; for example: frequency is about several hundred kHz) or lion c mixed mode radio, etc. These traditional technologies are horizontal, DC or RF, whether they are erect - A basic limitation, that is, the electrode installed in the vacuum ("shower head", such as a material, a flat electrode, etc., must be electrically isolated from the cavity - ated) So look for a stable surface of the physics of the plasma bombardment. For example, when 'sputtering depGsitiGn', when the extremely high double-conducting moment will have a high current, the station itself or It is unfavorable for New Zealand. Because of this 201239981, the substrate is designed to be in non-electrical connection with the cavity and the m, so that the inductance II of the whole machine D tends to be stable, so the surface of the substrate will not attract. High-energy electrons or ions, even, are damaged or even destroyed by bombardment by us. It is also advantageous because, due to the lack of ion hiding, the microstructure (such as the crystallographic direction of the crystal grains) is reduced too much, so that its uniform steepness (such as electric beer, make-up material) has to be transferred within the range of - mosquitoes. Nearly half of the world’s sighs have been widely accepted, for example, Taiwan’s Fulin, 曰旸, and Cannon; the United States’ τ; 々 Japan’s Ulvac; South Korea; Germany’s 〇eriito, 细] v Plus her (10) * P疋 The substrate is placed in an electrically insulated state (EleetriGaiiyn) and then subjected to a plasma process. It is worth noting that the above insulation method is not easy to implement, and there are two main a, 帛, because 34 machines are linear continuous 'their transmission system and substrate (meehanieally e purchased (4), It is necessary to make the electrical insulation of the purpose of the electrical insulation, and the electrical insulation of the substrate that accepts the mechanical transmission mechanism - and take into account, and this will add a lot of design difficulties. Second In recent years, with the development of the shipbuilding industry, the process space of 'speaking, going to the side (that is, 70 is fully electrically isolated) is often not enough, because the substrate that is electrically isolated from the electrode cannot be used. It is easy to change the bias voltage on it. For example, some of the special needs of the ion-based substrate and the performance of the substrate are often limited by the basic limitation of the electrical bias on the substrate. (Because the substrate has been a heart... ^loat^d) 'The effect of the job is good. Sticky button (she is the duck example. For the film and the film), the size of the occupation plays the key to the success of the process. Role. The substrate and the film spoon stick to the fate of the birth of the 'mainly from the Van der Waals (fine & ^al' s ^), this gravitational force is very powerful within the distance of the nano, other effects include at least the frequency M_e (fine (8) inteHQG_., both (Vandeva gravity and the father Mutual shackles are related to the cleanliness and roughness of the surface. It is worth noting that the surface of the thick chain of 201239981 2 change = 'even if it seems to be non-f slight' can change the size of this van der Waals gravity, so often The result is that the adhesion is changed. As a result, if the interface provides insufficient postal power, the film that is pressed up will still be separated from the substrate (Delami). The ions in the paddle are used to slightly bombard the surface of the button. In addition to cleaning the surface of the substrate material and adjusting its thick chain, it can achieve the effect of controlling the adhesion, which is better than the chemical method of the hydration. Only a lot of sweat is chemically cleaned to ppb or qing. The degree is not easy, or the cost is high. In addition to the adhesion, the color of the metal film is often affected by the electrical breakdown bias. In the dry process, the bias of the plasma and the vertical wall _ slope of the micro-size Related to the plasma lion chemistry In the steaming process, the bias of the plasma is related to the coating thickness of the vertical wall in the micron size. The thickness of the vertical surface coating is related to the step coverage. Throughout the above, the linear continuous cavity of the present day. The In-line process system requires a solution that allows the microstructure of the coating, as well as the interface between the coating and the substrate, to be steadily adjusted to improve overall performance. Figure 1 is a traditional linear continuous The design method of the cavity. This is one of several similarly shaped cavities on a horizontal linear continuous cavity system (the vertical edge is shown in Figure 13. The basic principle is the same). As shown in Figure 1, The upper bottom surface of the top of the cavity (100) is connected with an upper electrode (193), and the upper electrode (193) is located above the substrate carrier (120), and the cavity (100) is connected with a power supply (power) Supply) (195) 'The upper electrode (193) is electrically connected to the power supply (p0wer supply) (195), and has an air inlet (192), and a suction port is provided at the bottom of the cavity (1〇〇). Gate (17 (7) is equipped with a vacuum pump (180)' in the cavity (1 〇〇) There is a left entrance (11〇) on the left side and a gate (150) for feeding the substrate (1%) from the outside, and a right-out σ at the right side of the cavity (100). 13〇) and equipped with a gate (160)' to transfer the substrate (196), and a built-in transmission (140) in the cavity (1〇〇) can make the substrate carrier (120) smooth Arrive at a predetermined location. 201239981 When the user wants to execute the process, the left and right populations (1)〇) and (13〇) of the gate (15_〇6〇) are closed, and the suction gate (170) is moved from the position of (10)a) to the position of (10)b). When the open state is formed, the vacuum air (180) is used to pump the atmospheric air (19〇) inside the cavity (1〇〇) to a specific vacuum value (19〇a), and the user can process the process gas at this time (丨9〗) Introduced into the cavity by the air inlet ^%) (1〇, when the pressure in the peptide body (100) reaches a certain pressure value (hidden), the user will supply the power supply (milk) [power supply] The powersupply may be 0 (3, at or in the form of this embodiment for the purpose of explanation), and the electric wave is sent to the upper electrode (193). At this time, the plasma is struck, and the substrate (196) is connected. The bombardment of the plasma - after a period of time, the surface properties are reached - specific conditions (such as improved adhesion), the process is completed. Due to the traditional linear continuous cavity system (5) ineproces, etc. (4) the substrate carrier (120) and the transmission (such as The connection makes the large current (197) difficult to break, especially when using a high frequency (~MHz) power supply, the above current is more difficult to completely cut off, The substrate of the mechanical transfer mechanism must be subjected to the electrical insulation of the module - and taken into account, this can be shown in Figure 3. Figure 2 is roughly the same as Figure 1 but Figure 3 shows that the plasma has just been In the case of a point (or when the plasma does not generate an arcing arcing), when a large current (197) is generated, the path to the ground is very large - they include at least (197a), (197b), (197e) Money (reward), in fact, in addition to the leakage path of the transmission mechanism (1ζκ), it also includes many other roads k 'This picture is for simplifying the description 'not painted*, but the principle Phase @, if you want to block these unknown (but can be many) ground leakage paths, increase the difficulty of design. [Summary] As described in the 'traditional design method to achieve the substrate and cavity The purpose of electrical insulation is to include many other paths in addition to the leakage path of the transmission mechanism in the actual real red situation. If you want to block these unidentified ground leakage paths, it will increase the design difficulties. Degree. 201239981 The present invention - this problem - The invention aims to provide an effective and controlled plasma cleaning process. The invention is a linear continuous cavity plasma processing device with the ability to control the plasma bias applied to a substrate, and the technical means used thereof When the user wants to perform the process, the substrate carrier is electrically disconnected from the transmission device, but is electrically connected to the power source. Thus, when the plasma process is performed, the substrate carrier is only electrically connected to the power source. With such a mechanism, the present invention is more suitable for a plasma continuous cavity (In-lme) plasma process (piasma process), which has the function of reducing the instantaneous current flowing into the substrate, and can control the plasma to be applied to The bias on the substrate, thus protecting the surface of the substrate, is particularly suitable for dry etching; other non-use plasmas are used as dry etching processes (eg PECVD, plasma-assisted chemical vapor evaporation) Alternatively, or using plasma but not for mineral film users (such as plasma clean), the present invention can also be applied to achieve high efficiency plasma-assisted processes and other features for the purpose. [Embodiment] The present invention provides a linear continuous cavity plasma processing apparatus having the ability to control the plasma bias applied to a substrate. Please refer to FIG. 2, for example, an RFPlasmaclean process. The cavity (200) is in a closed configuration, an air inlet (292) is provided at the top of the cavity (2〇〇), and an air suction gate (27〇) is provided at the bottom of the cavity (2〇〇). Connect a vacuum pump (280) 'With a left entrance (21〇) on the left side of the cavity (2〇〇) and a gate (25〇), the substrate (296) can be introduced from the outside. On the right side of the cavity (2〇〇), there is a right exit (23〇) and a gate (260) is provided to transmit the substrate (296), and the cavity (2〇〇) is built in. The transmission device (24〇) enables the substrate carrier (220) to smoothly reach a predetermined position. The substrate carrier (22〇) is made of a material that uses south conductivity (such as Ming, copper, stainless steel). , aluminum alloy, copper alloy, etc.). The invention is characterized in that the radio frequency (RF) electrode (211) is placed under the substrate carrier (22 〇) [the prior art is placed above the carrier] and its electrical separation is as shown in FIG. 193) and the substrate carrier (120), in addition, 201239981 power supply t' (power SUpply) (282) is equipped with a matching circuit (plus) and the electrode (Chuan). When the field user slave performs the process, the position of the door (25〇) and (pass) closes the left and right entrances (210) and ((10)) to the day (4), and the position is opened up to (27(10)). State, then the vacuum pump (280) draws the atmospheric air (29 〇) inside the chamber (200) to a specific vacuum value (294a) 'The user can now process the process gas (291) from the air inlet (292) Introduced into the cavity (), when the cavity (2〇0) reaches the specific pressure value (29 objects), the user can use the power supply (10) to be DC RF or its , type, the local application is The radio waves are supplied to the electrode pH), at which time the plasma is struck on the 'substrate (296) accepting a large current introduced by the transmission line (297), and the main source of its formation is electricity f; Ions and electrons. The electrode (2u) in Fig. 2 has at least two arrangement forms. The first type is as shown in Fig. 2A, the electrode (211) is raised to be in electrical contact with the substrate carrier (22A) (211a); The electrode (211) shown in Figure 2b is lowered to the degree of electrical separation (211b) from the substrate carrier (22〇). As shown in FIG. 2A, when the process is started, the electrode (211) is already at the mouth position, so the radio frequency electromagnetic wave (283) can be introduced from the bottom of the electrode (211) through the electrode (211) and the substrate carrier (22〇). The contact (300) is introduced into the body of the substrate carrier (220). Since there is a process gas (π) in the cavity (2〇〇), the plasma strikes on the substrate. The upper surface of (220) is provided with a substrate to be cleaned (296). Since it is electrically connected to the substrate carrier (220) and the electrode (2U), the plasma bias felt on the surface thereof is equal to the electrode ( 211) The perceived bias voltage, which is directly felt by the RF power supply (282), and the current is also controlled by the RF power supply (282). Therefore, the user can adjust the cleaning rate of the cleaned substrate (296) by adjusting the energy of the incident wave of the RF power supply (282), and the phase of the reflected wave on the substrate. It is adjusted by a matching circuit (Matching netw〇rk) (281) between the power supply (282) and the electrode (211). Figure 2B shows the end of the process. The electrode (211) is lowered in height to a height (2nb) and electrically separated from the substrate carrier (220). At this time, the substrate carrier (220) can be transported by the transport mechanism. (24〇) Leave the cavity 201239981 body (200). Referring to Figure A, one embodiment of the present invention raises the substrate carrier (4) to a height (2lla) which causes the substrate carrier (4) to be detached from the transmission device. The substrate carrier _ is only connected to the power supply (p_sqing_2), but is electrically insulated from the cavity (200) and the transmission _). As shown in Fig. 2c, the transmission wheel (241) on the transmission device (240) is made of an insulating material, so that the electrophoresis process is performed on the substrate carrier, (220), cavity (2〇〇) and The drive motor (not shown) and the like are also electrically insulated. In addition, the map carrier (D) does not use the substrate carrier (22〇) and the transmission device (10) to use insulating materials (such as ceramics, glass, rubber, iron gas, gas, polyethylene, polyethylene). Ammonium, polyester, polyurea, acrylic or engineering plastics.. etc.) 'When the electric destruction process is carried out, the substrate carrier (10)), the cavity and the transmission wheel (241) are also electrically insulation. Figure 4 shows a modified embodiment of the present invention. The structure in Figure 2 is most effective for surfaces that are difficult to clean (such as SiO 2 ' Zr02 ' Ti02 film layer). If the surface to be cleaned does not require too high energy ion bombardment, there is a high requirement for uniformity. The invention can be adapted to the form of Figure 4. The cavity (2〇〇) is also in a closed form, and an air inlet (292) is arranged at the top of the cavity (2〇〇), and an air suction gate (270) is arranged at the bottom of the cavity (200). Connect a vacuum pump (28〇), with a left entrance (21〇) on the left side of the cavity (200) and a gate (25〇) to transfer the substrate (2%) from the outside. On the right side of the cavity (200), there is a right exit (23〇) and a gate (26〇), which can transmit the substrate (296) out of the cavity (2〇〇). The device (24〇) enables the substrate carrier (22〇) to smoothly reach a predetermined position, and the power supply (p0wer supply) (282) is provided with a matching circuit (281) and an electric energy distribution conveyor (285) ( Power splitter) is connected to the electrode (211). During operation, the RF electromagnetic wave (280) reaches the load in two ways, such as RF electromagnetic wave (283a) and (283b), RF electromagnetic 201239981 wave (10)a)-path-passing substrate carrier (10)), RF electromagnetic wave (2 Tao_ another _ the upper electrode (2) 3) above the carrier, the upper electrode (10) can be coupled with the electropolymer, so that the concentration of the charged ion in the cavity is maintained at a constant value, or the value of the electrical impedance is reached to a specific requirement. The value of 'increased the system (four) stability, this Meng by Wei Wei Chuan green (10)) (p〇wer 1 coffee) _ whole, allows users to transmit electric enamel to the substrate carrier with different energy ( 220) and the upper electrode (10)), which is very helpful for treating the surface of organic substances such as high molecular polymers (it is necessary to balance the cleaning rate with avoiding the intense bombardment). For other materials, This implementation (4) has a similar effect. The figure shown in Figure 5 is also the _ _ _ _ _, the structure of the second side of the button, the difference is that its electrode (211) with electrostatic reading (10)). The carrier (10) in Figure 2 is joined to the electrode (211) by gravity. If the workpiece (296) or the new carrier (22〇) is outside the joint surface, it will lead to Poor contact. The electrostatic chuck (2(2) shown in Figure 5 can firmly attract the substrate carrier (220) and reduce the impedance value of the joint (Electncal piano d·), so that the electromagnetic wave can be more efficiently introduced into the plasma. The structure of the present invention is substantially the same as that of FIG. 2, and the power supply ϋ (282) is an RF1 + DOA Mixed Mode model. Its derivative embodiment includes AC + DC power. Supply mode, the frequency of the AC is not limited to 13. 56 Hz such power SUppiy brand includes at least the pinnacle power supply produced by Advanced Energy of the United States, etc. The design of Figure 6 can also play the effect of j) C sputtering At the same time, the bias of the electric pick can be appropriately lowered by the addition of RF or AC, so that the surface of the substrate (296) is subjected to moderate but not excessive ion bombardment. Figure 7 is also a modified embodiment of the present invention, and its structure is substantially the same as that of Figure 2. The different 201239981 uses an electrode (211) with cooling water passages (211a) and (2) lb, so that the substrate can be used. The temperature of the carrier (220) is effectively controlled, and it is effective to suppress the temperature rise of the substrate (296) for the electric cleaning process requiring the inter-quenching. FIG. 8 is a modified embodiment of the present invention, and its structure is substantially the same as that of FIG. 2 except that it uses a power supply (282) of a pulse DC power supply, which is generated by an instantaneous electric field. Ion bombardment can be performed on very hard or high dielectric materials. However, when it is used in a conventional linear continuous cavity system (as shown in Figure 1), the disadvantage is that the convergence point is a large ground current. The present invention can reduce the above problems in whole or in part by electrically isolating the base tool (22Q) from the driving device (240). Figure 9 is not a modified embodiment of the present invention, and its structure is substantially the same as that of Figure 2, except that its upper electrode (293) is used for the coating process, where the upper electrode may be a target or a The porous electrode is conveniently introduced into the process gas (29 丨) for chemical vapor evaporation, which allows the cavity (200) to undergo a dual-mode process (such as Dep-Etch, deposition-etching). It is worth noting that the power supply (282) (P〇wer supply) is equipped with switches (284) and (285) respectively on the path of power transmission to the upper electrode (293) and the substrate carrier (220). The period of time is used for the surface treatment of the substrate (296) (this time is expressed as ") switch (284) closed, the wire carrier (220) and the power supply g§ (282) (Powersupply) closed circuit (e |ectricaiiy cl〇sed), the switch (3) is opened, and the upper electrode (293) forms an open circuit with the power supply (282) (P〇wer supply). At this time, the radio frequency electromagnetic wave (283) reaches the path (283a). Gu^22Q), and power-up ^^ fine switch (285) is open circuit (eiectricany Qpened), not power supply (10) (2) (8) rainbow
Supply)所提供之電波影響，基材處於蝕刻（Etching)模式。當使用者欲進 入到鍍膜(Dep)的模式時(該時間表達為乃，開關（284)開起(electdcaiiy 201239981 opened)，開關(285)閉合(electricallyclosed) ’ 因此上電極(293)與電源 供應器（282)(Power supply)形成通路(electrically connected) ’ 此時射 頻電磁波（283)沿路徑（283b)到達上電極（293)，基材載具（220)則因開關 (284)為開路(e 1 ectr i ca 11 y opened) ’ 不受電源供應器（282 ) (Power supp 1 y) 所提供之電波影響’此處若上電極（293)是一靶材，則基材（296)會接受到 濺鍍製程（sputtering deposition process)。如此反覆進行$與》製程， 膜（222)逐漸形成一定之厚度與結構。膜（222)的微結構（如類鑽石膜之含 碳量 ’ carbon ingredient in black diamond film ;晶粒生長方向，grain orientation ; step coverage，等等）與單純使用鍍膜製程（例如物理蒸氣 蒸鍵或化學蒸氣蒸鑛）的膜層並不相同，而且該些不同之處可藉調整電源供 應器（282)(Power supply)的參數（如偏壓Bias;穩定電流或電壓的措施 Current or Voltage regulation等等）與時間0與》的調配而進行微調。 圖十所示亦為本發明的變換實施例，其結構與圖二大致相同，腔體(2〇〇) 為封閉形態，但腔體(200)頂部沒有進氣口，而腔體(2〇〇)底部亦沒有抽氣閘 門與真空幫浦’於腔體(2〇0)左側處設有左入口(2丨〇)並配設有閘門(2$〇)，可 將基材(296)自外部傳入，而於腔體(2〇0)右側處設有一右出口 (23〇)並配設有 閘門(260)，可將基材(296)傳出，另於腔體(2〇〇)内置設有傳動裝置(24〇)，可 使基材載具(220)順利到達一預定之位置，電源供應器(p〇wer supplw卩8幻 配設有一匹配電路(281)而與電極(211)導接。本實施例不同的是它沒使用特 殊的製程氣體，而是以環境中的大氣壓空氣(29〇)作為製程上使用之氣體， 圖上其它物件已經一一於圖中標明，習知此技藝者可由該些標明得出該實 施例之真意，過去此類製程（大氣壓電漿製程）常使用於小型、單腔體系統 201239981 上，對基材⑽)之偏壓並無法控制，本發明使得以喝技術獲得—新的應 用’將偏壓加諸於基材(296)之上，使得清潔效果大幅提昇，並且更容易控 制。 圖十-所示亦為本發明的變換實施例，其結構與圖二大致相同，不同 的是它將傳動裝置⑽）置於腔體(_之外。事實上按照不同製程的需 求’傳送機構(未繪示）可置於幾個選擇部位之―，例如，它可置於鄰近腔 體，等到閘H(25G)或⑽)打開時，再穿過出人σ(2⑻或⑽）進入腔體 (_内取出或放置基材載具⑽）或基材⑽），或兩者皆^此實施例的 目的’在@化賴(期之設計’並且能使電聚點起時漏至大地的電流的路 徑減少’使機台更趨於安定’不會如圖三習知的設計有許多漏至大地的路 徑，（197a)、（197b)、（197c)、（197d)等的情形。 圖十二將電漿的偏壓對plasma b〇mbardment的作用作一些說明並解 釋傳統電毁製程機台的對其控制方法。在進行魏製程時，—般的製程氣 體(291)均料人氬氣(Αϊ〇或其它惰性氣體，這絲體分子在受到高電壓 時’部份會解離成離子(201)與電子(202)，形成電釘299)。從外觀來看， 電漿(299)形成時，就好像是一股電流7.⑽3)流向上電極(293)。這股電流 ()的大j只咗展離子化的程度有深切的關係，它也直接影響到電聚 的偏壓（Bias)(注意，Bias為一物理量，圖中並無繪示）。舉例來說，以 相同的瓦賊的能量施之於躲氣體賴，以DG形躺㈣騎子漢度較 低（注意’離子濃度為一物理量’圖中並無繪示），基材（296)感受到的第一 偏壓值較③；卩RF形成電漿的離子濃度較高，基材(296)感受到的第二偏 壓值較低。偏壓高的好處是離子絲力道高，壞處是某些能量過大的離子 201239981 對基材的破壞性轟擊亦隨之加大。為了讓基材表面能夠接受適量但不過量 的離子秦擊，以及減少熱電子的加熱，傳統的線性連續製程（in_Hne)機台 將基材設計為電性絕緣(如圖十-所示）。製_動時，電能由電源供應器 (power supply)(282)送至上電極(293)引發電漿（如果為RF電波，則仍需 有匹配電路(281)置於兩者之間）。使用者應注意電襞所吸收的能量必須先 將氣體離子化，然後以偏壓的方式對材料表面送入機械能量（如離子轟擊， ion bombardment)。電源供應器（282)送入的power越大，電漿的偏壓也越 大（彳又製程氣體（291)的壓力，氣流等等條件均不改變）。由於電聚（29Q) 並非存在於上電極(293)表面附近，基材（296)亦同時接觸到電漿(299)， 這對使用者而言’等於從電祕顧（282)可以相上電極(293)以及基材 (296)。也因此，傳統線性連續製程（in_line)機台使用者多半藉著調整上 電極(293)的參數（如p晴等等）來“遠距”的調整離子⑽）對基材(296) 的轟擊此里。這其實是—種極不有效的方法，因為與上電極(2⑽）不同的 疋基材（296)所感文到的電毁偏壓是一個小很多（約為電極的M20)且無 法自主调整的偏壓（此時基材為electrically flQated)，也就是說，上述 方法的製程敏感度甚低，遇_以處理的表面，其唯—的方法就是繼續加 大达到上電極⑵3)的PGWer。值得注意献，使用者並不能無限制地加高 上電極(293)的PQWer來滿足對基材(296)的轟擊的需求，因為電漿的轟擊 作用會將大部份的電能消耗在上電極(293)上，造成上電極（293)發熱現 象如果使用者執思將送入的p〇wer加大，事實上只是增加不必要的電極 % ,、、、現S S於基材（296)的表面的離子轟擊速率（i〇n b〇mb她邮 rate)’則是變化有限的。此時使用者能以利用的製程參數並不多了因此， 201239981 傳統in-Une真空製程設備有著一個致命的缺點，那就是對一個基材上方 的電水偏壓(Plasma Bias) ’尤其是面積甚大的基材，受限於_打不能無 限量地加大’只能靠調整氣體動或氣氛氣體的濃度獲得（氣氛氣體是指一 種還原性氣體’摻人製程氣體裡，以協助材料表面處理）…旦遇到基材材 質不易清理’黏著性不易調整的情況時，傳統線性連續製程（in—Hne)機台 仍然缺乏一有效又容易控制的電漿清潔製程。 圖十三為本發明的另—實施例。它與其它的實施例不同之處在於腔體 ()為直立式。此種設備常使用於液晶平板顯示器（抓⑽的製程上， 其它製程转賊用此種設備者⑽σ: 面板麵賴，硬制鑛膜設 備等等）。當製韻始時’基材⑵6)與紐魅⑽)均與傳送機構(施） 電性脫離’其適合制的方法除了包括電極(211)將基材魅(湖頂昇至 某-高度之外’還包括烟^置⑽）下岐另—特定誠，或上述兩種 方法合併使用。有關於送人電極，引發電漿的方法，本實施例與之前 圖-至圖十二峨述之方法絲不同，此處不再重魏明。值得注意的是， 項昇裝置(298)並非習知傳統機械加工技藝麵能輕易瞭解的，它除了是一 機械傳動裝置’也1_高電壓與大電流的導體。圖十四與十五對此一 具頂昇裝置(298)作-說明。圖十四表示的是電毁遇有電弧放電㈣呦的情 況時電流的大小，這是所有«製程齡都不W全消_現象，因此頂 幵裝置(298)負有承擔瞬間大電流的貴任（此圖也可用以作為圖—之輔助說 明’表達出甚大的電流在電t初起之時，流過基材）。圖十四是示意之表示， 請注意在極短的時間理(<100㈣，一股甚大的電流(一般大於则安培)會 產生在電漿⑽)裡’這樣大的電流在極輯時間内流過頂昇裝置（咖）， 15 201239981 除了會傷害基材（296)之外，更容易造成電源供應器（282)與匹配電路(281) 故I1 早，甚至產生致命的危險。為使製程設備不受損壞，當頂昇裝置（298)接 叉到父流電波時，其上的電壓駐波比值(voltage standing wave ratio，VSWR) 應維持在電源供應器(282)與匹配電路器(281)能容許的範圍之内。根據電磁 子理娜’ VSWR與傳輸線(transmissi〇n nne)的阻抗(丨mpedance)之間關係式可 以用以公式(1)表達： (1) vswr = 1±£ P指的是自電源供應H(282)至電極(2U)所有阻抗造成的反射波反射係數 (reflection coefficient)，p與電極(211)和傳輸線(297)阻抗有關。傳輸線(297) 可以為金屬物(metallic object) ’ 電線(electrical wire)，同軸電纜(coaxial Cable) ’ 波導(waveguide) ’ 超導體(superconductor)。如公式(1)所示，反射係 數P的大小對電壓駐波比值VSWR有深切的影響。所以，頂昇裝置1397 之製作過程必須一併考慮到反射波的現象 。例如，電磁干擾(Electromagnetic interference)與電弧放電(arcing)的抑制即與頂昇裝置(298)的設計有關々滿 足電源供應器(282)對電壓駐波比值VSWR的需求，本發明將頂昇裝置(298) 的阻抗值訂在30歐姆以下，理由如下。圖十五所表示的是經過本發明人實 驗得知的VSWR與工業級電漿製程用的電源供應器之間的關係曲線示意 圖。如圖十五所示’當入射波的能量(F〇rward power)昇高時(理論上如此可 導致餘刻速率或鍍率加大）’其所需要的電壓駐波比值VSWR就需越接近於 1，這也就是說反射係數p應越接近〇，傳輸線與電極的阻抗要據此規劃。 如以圖十五為例，如果要滿足電壓駐波比值VSWR小於1.5的需求(此時入 射波能量在1200瓦附近），則反射係數應在〇 2以下，習知RF電漿工程者 16 •201239981 1 於參考本發明時，可得知頂昇裝置(298)的阻抗值應低於3〇歐姆，實際上 的頂昇裝置(298)的阻抗值與腔體⑽）内的機構有關，在此不再贅述。 本發明實施要點，已於前述圖二至圖十五清楚描述出，其它的變更應 帛爐好’並不僅限於該麵形麟示，錄本實施方法，則仍不外於 本發明之陳述範®，故其使狀權力翻應受本發明之權力主張範圍之約 制，在此不再 列舉。 【圖式簡單說明】 圖一為傳統線性連續腔體的設計法 圖二為本發明以射頻電漿清潔製程 圖二A至圖二D為圖二之運作實施示意圖 圖三傳統設計方法之實施例 圖四至圖十一為本發明變換實施例 圖十一係將電紧的偏壓對plasma bombardment的作用作一些 圖十三為本發明之另一實施例 圖十四與十五對此一具頂昇裝置作一說明分析圖表 【主要元件符號說明】 習用部分； 100腔體 110左入口 120基材載具 130右出口 140傳送機構 150、16 0 閘門 Π0、170a、170b抽氣閘門 180真空幫浦 190大氣壓空氣 191製程氣體 193電極 1904a特定真空值 194b壓力特定值 195電源供應器 196基材 197大電流 197a、197b、197c、 197da漏電路徑 本發明部分； 200腔體 201離子 202電子 203電流/ 17 201239981 210 左入口 211、21]a、2〗lb 電極 212接點 220基材載具 222膜 230右出口 240傳動裝置 241傳動轉輪 270、270a、270b 抽氣閘門 281匹配電路 282電源供應器 290大氣壓空氣 291製程氣體 293上電極 294a特定真空值 296基材 297傳輸線 299電漿 300接點 250、26 0 閘門 280真空幫浦 283、283a、283b射頻電磁波 292進氣口 294b壓力特定值 298頂昇裝置 310接觸之處 18Supply) The effects of the radio waves provided by the substrate are in the Etching mode. When the user wants to enter the mode of coating (Dep) (this time is expressed as, switch (284) is opened (electdcaiiy 201239981 opened), switch (285) is closed (electricallyclosed) 'so the upper electrode (293) and power supply The power supply (282) is electrically connected. At this time, the radio frequency electromagnetic wave (283) reaches the upper electrode (293) along the path (283b), and the substrate carrier (220) is opened by the switch (284). e 1 ectr i ca 11 y opened) 'Unaffected by the power wave provided by the power supply (282) (Power supp 1 y) 'When the upper electrode (293) is a target, the substrate (296) will Receiving the sputtering deposition process, the film and the process are gradually formed, and the film (222) gradually forms a certain thickness and structure. The microstructure of the film (222) (such as the carbon content of the diamond-like film) In black diamond film; grain growth direction, grain coverage, step coverage, etc.) is not the same as the film layer using a coating process (such as physical vapor evaporation or chemical vapor evaporation), and the differences can be Adjust electricity The parameters of the power supply (282) (such as biased Bias; Current or Voltage regulation for steady current or voltage, etc.) are fine-tuned with the time 0 and 》. Figure 10 is also the present invention. The modified embodiment has the same structure as that of FIG. 2, and the cavity (2〇〇) is in a closed form, but the top of the cavity (200) has no air inlet, and the bottom of the cavity (2〇〇) has no suction gate and The vacuum pump has a left entrance (2丨〇) on the left side of the cavity (2〇0) and is equipped with a gate (2$〇) to allow the substrate (296) to be introduced from the outside. (2〇0) There is a right exit (23〇) on the right side and a gate (260) for transferring the substrate (296) and a built-in transmission (24). 〇), the substrate carrier (220) can be smoothly reached to a predetermined position, and the power supply device (p〇wer supplw卩8 is provided with a matching circuit (281) to be connected to the electrode (211). This embodiment The difference is that it does not use a special process gas, but the atmospheric pressure air (29 〇) in the environment is used as the gas used in the process. Other objects on the map have been marked one by one in the figure. Those skilled in the art can clarify the true meaning of this embodiment. In the past, such a process (atmospheric piezoelectric slurry process) is often used on a small, single cavity system 201239981, and the bias of the substrate (10) is uncontrollable. The present invention enables a new application of the beverage technology to apply a bias voltage to the substrate (296), resulting in a greatly improved cleaning effect and easier control. Figure 10 - is also an embodiment of the invention, the structure of which is substantially the same as that of Figure 2, except that it places the transmission (10)) outside the chamber (in fact, according to the requirements of different processes) (not shown) can be placed in several selected parts, for example, it can be placed in the adjacent cavity, and when the gate H (25G) or (10)) is opened, it can enter the cavity through the human σ (2 (8) or (10)). The body (_ remove or place the substrate carrier (10)) or the substrate (10)), or both. The purpose of this embodiment is 'in the design of the product' and can leak to the earth when the electricity is collected. The path reduction of the current 'makes the machine more stable' does not have many paths that leak to the earth as in the conventional design of Fig. 3, (197a), (197b), (197c), (197d), and the like. Figure 12 shows the effect of the bias of the plasma on the plasma b〇mbardment and explains the control method of the traditional electro-destruction process machine. When the Wei process is performed, the general process gas (291) is expected to be Argon (Αϊ〇 or other inert gas, this filament molecule will dissociate into ions (201) and electricity when subjected to high voltage (202), electric nail 299) is formed. From the outside, when the plasma (299) is formed, if an electric current is on 7.⑽3) flows to the electrodes (293). This current () has a deep relationship with the degree of ionization, and it also directly affects the bias of the electropolymer (Bias) (note that Bias is a physical quantity, not shown in the figure). For example, the same thief's energy is applied to the hiding gas, and the DG-shaped lying (four) riding is lower (note that the 'ion concentration is a physical quantity' is not shown in the figure), the substrate (296 The first bias value perceived is greater than 3; the ion concentration of the 形成RF forming plasma is higher, and the second bias value perceived by the substrate (296) is lower. The advantage of high bias is that the ion wire has a high force. The disadvantage is that some of the energy is too large. 201239981 The destructive bombardment of the substrate is also increased. In order to allow the substrate surface to accept an appropriate but not excessive amount of ion bombardment, and to reduce the heating of the hot electrons, the conventional linear continuous process (in_Hne) machine designed the substrate to be electrically insulated (as shown in Figure 10). When the system is powered, the power is sent from the power supply (282) to the upper electrode (293) to initiate the plasma (if it is an RF wave, a matching circuit (281) is still required to be placed between the two). The user should note that the energy absorbed by the electric shovel must first ionize the gas and then impart mechanical energy (such as ion bombardment) to the surface of the material in a biased manner. The greater the power supplied by the power supply (282), the greater the bias of the plasma (the pressure of the process gas (291), the airflow, etc. are not changed). Since the electropolymerization (29Q) is not present near the surface of the upper electrode (293), the substrate (296) is also exposed to the plasma (299), which is equivalent to the user's secret (282). Electrode (293) and substrate (296). Therefore, the traditional linear continuous process (in_line) machine users mostly use the parameters of the upper electrode (293) (such as p-clear, etc.) to "remote" the adjustment ions (10)) to bombard the substrate (296). Here. This is actually a very inefficient method because the electro-destructive bias sensed by the crucible substrate (296) different from the upper electrode (2(10)) is much smaller (about the M20 of the electrode) and cannot be adjusted autonomously. The bias voltage (the substrate is electrically flQated at this time), that is, the process sensitivity of the above method is very low, and the only way to treat the surface to be treated is to continue to increase the PGWer reaching the upper electrode (2) 3). It is worth noting that the user cannot increase the PQWer of the upper electrode (293) without limit to meet the bombardment requirement of the substrate (296), because the bombardment of the plasma will consume most of the electrical energy at the upper electrode. (293), causing the upper electrode (293) to heat up. If the user thinks that the p〇wer will be increased, in fact, only the unnecessary electrode % is added, and the SS is now on the substrate (296). The ion bombardment rate of the surface (i〇nb〇mb her post rate) is limited. At this time, the process parameters that the user can use are not much. Therefore, the conventional in-Une vacuum process equipment has a fatal disadvantage, that is, the electric water bias (Plasma Bias) above a substrate, especially the area. Very large substrates, limited by _ can not be infinitely increased 'can only be adjusted by adjusting the concentration of gas or atmospheric gas (atmosphere gas refers to a reducing gas 'incorporating process gas to assist material surface treatment When the substrate material is difficult to clean, the traditional linear continuous process (in-Hne) machine still lacks an effective and easy-to-control plasma cleaning process. Figure 13 is a further embodiment of the invention. It differs from the other embodiments in that the cavity () is upright. Such equipment is often used in liquid crystal flat panel displays (the process of grasping (10), other processes used by thieves to use such equipment (10) σ: panel face, hard ore film equipment, etc.). When the beginning of the rhyme, both the 'substrate (2) 6) and the new enchantment (10) are electrically separated from the transport mechanism. The method suitable for the system except the electrode (211) includes the substrate charm (the lake top rises to a certain height) The outside 'also includes the smoke (10)), the other, the specific method, or the combination of the above two methods. Regarding the method of sending the electrode and inducing the plasma, the present embodiment is different from the method of the method described in the previous figures to the above, and is not repeated here. It is worth noting that the item lifting device (298) is not easily understood by conventional mechanical machining techniques. It is not only a mechanical transmission device but also a high voltage and high current conductor. Figures 14 and 15 show this with a jacking device (298). Figure 14 shows the current in the case of electric arcing (4) 电, which is the case that all the processes are not completely _ phenomenon, so the top device (298) is responsible for the momentary high current. Any (this figure can also be used as an aid to the diagram - to express a very large current flowing through the substrate at the beginning of the electricity t). Figure 14 is a schematic representation, please note that in a very short time (<100(4), a very large current (generally greater than ampere) will be generated in the plasma (10)). Flowing through the jacking device (coffee), 15 201239981 In addition to harming the substrate (296), it is easier to cause the power supply (282) and the matching circuit (281) to be I1 early and even fatal. In order to protect the process equipment from damage, when the jacking device (298) is connected to the parent wave, the voltage standing wave ratio (VSWR) should be maintained at the power supply (282) and the matching circuit. The device (281) can be tolerated within the range. According to the relationship between the electromagnetic neutron's VSWR and the impedance of the transmission line (transmissi〇n nne) (丨mpedance) can be expressed by the formula (1): (1) vswr = 1±£ P refers to the self-power supply H (282) The reflection coefficient of the reflected wave caused by all the impedances of the electrode (2U), and p is related to the impedance of the electrode (211) and the transmission line (297). The transmission line (297) may be a metallic object 'electrical wire', a coaxial cable 'waveguide', a superconductor. As shown in the formula (1), the magnitude of the reflection coefficient P has a deep influence on the voltage standing wave ratio VSWR. Therefore, the manufacturing process of the jacking device 1397 must take into account the phenomenon of reflected waves. For example, the suppression of electromagnetic interference and arcing is related to the design of the jacking device (298), which satisfies the demand of the power supply (282) for the voltage standing wave ratio VSWR, and the present invention will jack up the device. The impedance value of (298) is set at 30 ohms or less for the following reasons. Fig. 15 is a schematic diagram showing the relationship between the VSWR and the power supply for the industrial-grade plasma process, which has been experimentally found by the inventors. As shown in Figure 15, 'When the energy of the incident wave (F〇rward power) increases (theoretically, the rate of the residual or the plating rate increases), the closer the voltage standing wave ratio VSWR is, the closer it needs to be. At 1, this means that the closer the reflection coefficient p should be to 〇, the impedance of the transmission line and the electrode should be planned accordingly. For example, as shown in Fig. 15, if the voltage standing wave ratio VSWR is less than 1.5 (the incident wave energy is around 1200 watts), the reflection coefficient should be below 〇2, and the conventional RF plasma engineer 16 • 201239981 1 In reference to the present invention, it can be known that the impedance value of the jacking device (298) should be less than 3 ohms, and the impedance value of the actual jacking device (298) is related to the mechanism in the cavity (10). This will not be repeated here. The implementation points of the present invention have been clearly described in the foregoing Figures 2 to 15 and other changes should be made to the furnace. ®, so its exemplifying power is subject to the scope of the claims of the present invention and will not be enumerated here. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a design method of a conventional linear continuous cavity. FIG. 2 is a schematic diagram of the operation of the second embodiment of the present invention by using a radio frequency plasma cleaning process diagram 2A to FIG. 4 to 11 are the modified embodiments of the present invention. FIG. 11 is a view showing the effect of the electric bias on the plasma bombardment. FIG. 13 is another embodiment of the present invention. FIG. Lifting device as an explanatory analysis chart [main component symbol description] Conventional part; 100 cavity 110 left inlet 120 substrate carrier 130 right exit 140 transfer mechanism 150, 16 0 gate Π 0, 170a, 170b vent gate 180 vacuum pump 190 atmosphere air 191 process gas 193 electrode 1904a specific vacuum value 194b pressure specific value 195 power supply 196 substrate 197 high current 197a, 197b, 197c, 197da leakage path part of the invention; 200 cavity 201 ion 202 electron 203 current / 17 201239981 210 Left inlet 211, 21]a, 2 lb electrode 212 contact 220 substrate carrier 222 film 230 right outlet 240 transmission 241 transmission wheel 270, 270a, 270b Exhaust valve 281 matching circuit 282 power supply 290 atmospheric air 291 process gas 293 upper electrode 294a specific vacuum value 296 substrate 297 transmission line 299 plasma 300 contact 250, 26 0 gate 280 vacuum pump 283, 283a, 283b radio frequency electromagnetic wave 292 air inlet 294b pressure specific value 298 jacking device 310 contact 18