JP5038740B2 - 帯域通過フィルタおよびその製造方法 - Google Patents
帯域通過フィルタおよびその製造方法 Download PDFInfo
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- JP5038740B2 JP5038740B2 JP2007044560A JP2007044560A JP5038740B2 JP 5038740 B2 JP5038740 B2 JP 5038740B2 JP 2007044560 A JP2007044560 A JP 2007044560A JP 2007044560 A JP2007044560 A JP 2007044560A JP 5038740 B2 JP5038740 B2 JP 5038740B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000004020 conductor Substances 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 29
- 230000005540 biological transmission Effects 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 description 36
- 239000010408 film Substances 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 23
- 239000002184 metal Substances 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- 238000005530 etching Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/542—Filters comprising resonators of piezoelectric or electrostrictive material including passive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Filters And Equalizers (AREA)
Description
2 平面パターンフィルタ
3 基板
4 アッテネータ
10 圧電体層
11 下部電極
12 上部電極
13 キャビティ
18 音響ミラー
20 誘電体層
21 地導体層
22 信号導体層
23 伝送線路
24 スタブ回路
24a ローディング部
24b タップ部
Claims (5)
- 圧電体層を上部電極および下部電極の間に挟み込んだ構造を有し目的の通過帯域に設計されたBAWフィルタと、誘電体層を介して地導体層および信号導体層を積層したストリップ線路からなり信号導体層に形成したスタブ回路を用いてBAWフィルタの阻止帯域を減衰させる平面パターンフィルタとを備え、BAWフィルタと平面パターンフィルタとは、共通の基板に形成され、平面パターンフィルタの信号導体層に設けた伝送線路を介して接続され、スタブ回路は、信号導体層において伝送線路から離間したローディング部と、一端が伝送線路に連続し他端がローディング部における両端間の中間位置に連続するタップ部とを有し、前記平面パターンフィルタの前記誘電体層は、前記BAWフィルタの前記圧電体層と同じ誘電体材料により形成されていることを特徴とする帯域通過フィルタ。
- 前記平面パターンフィルタの前記誘電体層と、前記BAWフィルタの前記圧電体層とは厚み寸法が等しいことを特徴とする請求項1記載の帯域通過フィルタ。
- 前記誘電体材料はPZTであることを特徴とする請求項1または請求項2記載の帯域通過フィルタ。
- 請求項1ないし請求項3のいずれか1項に記載の帯域通過フィルタの製造方法であって、前記基板の主表面側に基板の主表面に前記下部電極および前記地導体層となる導電材料の薄膜を成膜し、導電材料の薄膜において下部電極となる部位に結晶配向を制御するシード層を形成した後に、前記圧電体層および前記誘電体層を成膜し、さらに圧電体層および誘電体層の主表面に前記上部電極と前記信号導体層と前記スタブ回路とになる導電材料の薄膜を成膜することを特徴とする帯域通過フィルタの製造方法。
- 請求項1ないし請求項3のいずれか1項に記載の帯域通過フィルタの製造方法であって、前記基板の主表面側において、前記平面パターンフィルタを形成する部位に前記地導体層および前記誘電体層を順に成膜し、前記BAWフィルタを形成する部位に基板と同材料を成膜して誘電体層と平坦化し、その後、基板の主表面に前記下部電極となる導電材料の薄膜を成膜するとともに誘電体層の主表面に前記信号導体層となる導電材料の薄膜を成膜し、導電材料の薄膜において下部電極となる部位に結晶配向を制御するシード層を形成した後に、前記圧電体層を成膜し、さらに圧電体層の主表面に前記上部電極となる導電材料の薄膜を成膜することを特徴とする帯域通過フィルタの製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007044560A JP5038740B2 (ja) | 2007-02-23 | 2007-02-23 | 帯域通過フィルタおよびその製造方法 |
US12/528,070 US8098118B2 (en) | 2007-02-23 | 2008-02-19 | Bandpass filter and process of fabricating the same |
PCT/JP2008/053128 WO2008108193A1 (en) | 2007-02-23 | 2008-02-19 | Bandpass filter and process of fabricating the same |
EP20080711892 EP2122743B1 (en) | 2007-02-23 | 2008-02-19 | Bandpass filter and process of fabricating the same |
CN2008800059192A CN101617436B (zh) | 2007-02-23 | 2008-02-19 | 带通滤波器和制造带通滤波器的方法 |
TW097105945A TWI351126B (en) | 2007-02-23 | 2008-02-20 | Bandpass filter and process of fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007044560A JP5038740B2 (ja) | 2007-02-23 | 2007-02-23 | 帯域通過フィルタおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008211387A JP2008211387A (ja) | 2008-09-11 |
JP5038740B2 true JP5038740B2 (ja) | 2012-10-03 |
Family
ID=39531290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007044560A Expired - Fee Related JP5038740B2 (ja) | 2007-02-23 | 2007-02-23 | 帯域通過フィルタおよびその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8098118B2 (ja) |
EP (1) | EP2122743B1 (ja) |
JP (1) | JP5038740B2 (ja) |
CN (1) | CN101617436B (ja) |
TW (1) | TWI351126B (ja) |
WO (1) | WO2008108193A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9412235B2 (en) | 2009-05-08 | 2016-08-09 | Aristocrat Technologies Australia Pty Limited | Gaming system, a method of gaming and a linked game controller |
JP5299356B2 (ja) * | 2010-06-07 | 2013-09-25 | 株式会社村田製作所 | 高周波モジュール |
DE102011100468B4 (de) * | 2011-05-04 | 2013-07-04 | Epcos Ag | Mit akustischen Volumenwellen arbeitendes BAW-Filter, Herstellungsverfahren hierfür und Duplexer |
US8816567B2 (en) | 2011-07-19 | 2014-08-26 | Qualcomm Mems Technologies, Inc. | Piezoelectric laterally vibrating resonator structure geometries for spurious frequency suppression |
US20130120415A1 (en) * | 2011-11-14 | 2013-05-16 | Qualcomm Mems Technologies, Inc. | Combined resonators and passive circuit components on a shared substrate |
CN104333346A (zh) * | 2014-11-27 | 2015-02-04 | 王少夫 | 一种新型超宽带压电滤波器 |
US10439589B2 (en) * | 2016-06-24 | 2019-10-08 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator and filter including the same |
WO2018063299A1 (en) * | 2016-09-30 | 2018-04-05 | Intel Corporation | Rf filters and resonators of crystalline iii-n films |
DE102016125877B4 (de) * | 2016-12-29 | 2018-08-23 | Snaptrack, Inc. | BAW-Resonator- und Resonator-Anordnung |
JP6545772B2 (ja) * | 2017-01-03 | 2019-07-17 | ウィン セミコンダクターズ コーポレーション | 質量調整構造付きバルク音響波共振装置の製造方法 |
TWI611604B (zh) * | 2017-01-03 | 2018-01-11 | 穩懋半導體股份有限公司 | 體聲波濾波器及調諧體聲波濾波器之體聲波共振器之方法 |
JP7037336B2 (ja) * | 2017-11-16 | 2022-03-16 | 太陽誘電株式会社 | 弾性波デバイスおよびその製造方法、フィルタ並びにマルチプレクサ |
DE102018105091A1 (de) * | 2018-03-06 | 2019-09-12 | RF360 Europe GmbH | HF-Filter, HF-Filterkomponente und Verfahren zur Herstellung eines HF-Filters |
CN112585871A (zh) * | 2018-07-05 | 2021-03-30 | 阿库斯蒂斯有限公司 | 5G 3.5-3.6GHz频带声波谐振器射频滤波器电路 |
US10425061B1 (en) * | 2018-10-11 | 2019-09-24 | Qorvo Us, Inc. | Wireless communication circuitry |
DE102019102694B4 (de) * | 2019-02-04 | 2020-10-08 | RF360 Europe GmbH | Elektroakustisches Bauelement, HF-Filter und Herstellungsverfahren |
CN110492864B (zh) * | 2019-08-09 | 2023-04-07 | 天津大学 | 一种体声波滤波器的封装结构及该滤波器的制造方法 |
CN111146328A (zh) * | 2019-12-31 | 2020-05-12 | 诺思(天津)微系统有限责任公司 | 单晶压电结构及具有其的电子设备 |
US11998852B2 (en) | 2022-07-29 | 2024-06-04 | Aristocrat Technologies, Inc. | Multi-player gaming system with synchronization periods and associated synchronization methods |
CN115833779A (zh) * | 2023-02-15 | 2023-03-21 | 成都频岢微电子有限公司 | 一种波浪形体声波谐振器 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2112599A (en) * | 1981-12-24 | 1983-07-20 | Philips Electronic Associated | Bandpass filters |
JP3309578B2 (ja) * | 1994-08-11 | 2002-07-29 | 松下電器産業株式会社 | 高周波共振器及び高周波フィルタ |
JPH08335807A (ja) * | 1995-06-09 | 1996-12-17 | Meidensha Corp | バンドパスフィルタ |
US6768399B2 (en) * | 2000-07-24 | 2004-07-27 | Matsushita Electric Industrial Co., Ltd. | Laminated bandpass filter, high frequency radio device and laminated bandpass filter manufacturing method |
FR2821993B1 (fr) | 2001-03-09 | 2003-06-20 | Thomson Csf | Circuit grave de protection contre la foudre |
JP3972810B2 (ja) * | 2002-12-18 | 2007-09-05 | 株式会社村田製作所 | 分波器、および通信機 |
JP4192794B2 (ja) * | 2004-01-26 | 2008-12-10 | セイコーエプソン株式会社 | 圧電素子、圧電アクチュエーター、インクジェット式記録ヘッド、インクジェットプリンター、表面弾性波素子、周波数フィルタ、発振器、電子回路、薄膜圧電共振器、及び電子機器 |
JP4155576B2 (ja) | 2004-04-01 | 2008-09-24 | 国立大学法人東京工業大学 | リングフィルタ及びそれを用いた広帯域の帯域通過フィルタ |
US7446629B2 (en) | 2004-08-04 | 2008-11-04 | Matsushita Electric Industrial Co., Ltd. | Antenna duplexer, and RF module and communication apparatus using the same |
KR100750736B1 (ko) * | 2004-11-10 | 2007-08-22 | 삼성전자주식회사 | 하나의 트리밍 인덕터를 사용하는 필터 |
NO323325B1 (no) * | 2005-08-11 | 2007-03-19 | Norspace As | Elektronisk filter |
-
2007
- 2007-02-23 JP JP2007044560A patent/JP5038740B2/ja not_active Expired - Fee Related
-
2008
- 2008-02-19 EP EP20080711892 patent/EP2122743B1/en not_active Not-in-force
- 2008-02-19 CN CN2008800059192A patent/CN101617436B/zh not_active Expired - Fee Related
- 2008-02-19 WO PCT/JP2008/053128 patent/WO2008108193A1/en active Application Filing
- 2008-02-19 US US12/528,070 patent/US8098118B2/en not_active Expired - Fee Related
- 2008-02-20 TW TW097105945A patent/TWI351126B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2008108193A1 (en) | 2008-09-12 |
US20100117763A1 (en) | 2010-05-13 |
CN101617436B (zh) | 2013-05-22 |
TWI351126B (en) | 2011-10-21 |
TW200840131A (en) | 2008-10-01 |
EP2122743B1 (en) | 2012-11-28 |
JP2008211387A (ja) | 2008-09-11 |
CN101617436A (zh) | 2009-12-30 |
EP2122743A1 (en) | 2009-11-25 |
US8098118B2 (en) | 2012-01-17 |
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