JP5028354B2 - ウェーハの研磨方法 - Google Patents

ウェーハの研磨方法 Download PDF

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Publication number
JP5028354B2
JP5028354B2 JP2008197741A JP2008197741A JP5028354B2 JP 5028354 B2 JP5028354 B2 JP 5028354B2 JP 2008197741 A JP2008197741 A JP 2008197741A JP 2008197741 A JP2008197741 A JP 2008197741A JP 5028354 B2 JP5028354 B2 JP 5028354B2
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Japan
Prior art keywords
polishing
wafer
thickness
surface plate
slurry
Prior art date
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Active
Application number
JP2008197741A
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English (en)
Japanese (ja)
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JP2010034479A (ja
JP2010034479A5 (enExample
Inventor
大輔 古川
一将 浅井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Priority to JP2008197741A priority Critical patent/JP5028354B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to US13/002,449 priority patent/US8834230B2/en
Priority to SG2013053954A priority patent/SG192518A1/en
Priority to DE112009001875.0T priority patent/DE112009001875B4/de
Priority to KR1020117002430A priority patent/KR101587226B1/ko
Priority to PCT/JP2009/003021 priority patent/WO2010013390A1/ja
Priority to CN200980127186.4A priority patent/CN102089121B/zh
Priority to TW098122953A priority patent/TWI478226B/zh
Publication of JP2010034479A publication Critical patent/JP2010034479A/ja
Publication of JP2010034479A5 publication Critical patent/JP2010034479A5/ja
Application granted granted Critical
Publication of JP5028354B2 publication Critical patent/JP5028354B2/ja
Priority to US14/446,847 priority patent/US9108289B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2008197741A 2008-07-31 2008-07-31 ウェーハの研磨方法 Active JP5028354B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2008197741A JP5028354B2 (ja) 2008-07-31 2008-07-31 ウェーハの研磨方法
SG2013053954A SG192518A1 (en) 2008-07-31 2009-06-30 Wafer polishing method
DE112009001875.0T DE112009001875B4 (de) 2008-07-31 2009-06-30 Waferpolierverfahren und Doppelseitenpoliervorrichtung
KR1020117002430A KR101587226B1 (ko) 2008-07-31 2009-06-30 웨이퍼의 연마 방법 및 양면 연마 장치
PCT/JP2009/003021 WO2010013390A1 (ja) 2008-07-31 2009-06-30 ウェーハの研磨方法および両面研磨装置
CN200980127186.4A CN102089121B (zh) 2008-07-31 2009-06-30 芯片的研磨方法及双面研磨装置
US13/002,449 US8834230B2 (en) 2008-07-31 2009-06-30 Wafer polishing method and double-side polishing apparatus
TW098122953A TWI478226B (zh) 2008-07-31 2009-07-07 Grinding method of double - sided grinding device and wafer
US14/446,847 US9108289B2 (en) 2008-07-31 2014-07-30 Double-side polishing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008197741A JP5028354B2 (ja) 2008-07-31 2008-07-31 ウェーハの研磨方法

Publications (3)

Publication Number Publication Date
JP2010034479A JP2010034479A (ja) 2010-02-12
JP2010034479A5 JP2010034479A5 (enExample) 2010-10-21
JP5028354B2 true JP5028354B2 (ja) 2012-09-19

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JP2008197741A Active JP5028354B2 (ja) 2008-07-31 2008-07-31 ウェーハの研磨方法

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JP (1) JP5028354B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010013519B4 (de) * 2010-03-31 2012-12-27 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
JPWO2012124663A1 (ja) * 2011-03-15 2014-07-24 旭硝子株式会社 板状体の研磨方法
JP6448314B2 (ja) * 2014-11-06 2019-01-09 株式会社ディスコ 研磨液及びＳｉＣ基板の研磨方法
JP6510348B2 (ja) * 2015-07-23 2019-05-08 株式会社荏原製作所 基板処理装置、基板処理システム、および基板処理方法
US11897081B2 (en) 2016-03-01 2024-02-13 Fujimi Incorporated Method for polishing silicon substrate and polishing composition set
JP6649828B2 (ja) * 2016-03-28 2020-02-19 株式会社フジミインコーポレーテッド シリコン基板の研磨方法および研磨用組成物セット
CN116442112B (zh) * 2023-06-16 2023-10-03 合肥晶合集成电路股份有限公司 晶圆研磨的控制方法、系统、装置、设备和存储介质

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63260732A (ja) * 1987-01-06 1988-10-27 Mitsubishi Motors Corp 軸と穴との芯合わせ方法
JP3491337B2 (ja) * 1994-05-13 2004-01-26 株式会社デンソー 半導体厚非接触測定装置
JPH11135617A (ja) * 1997-10-31 1999-05-21 Nippon Steel Corp 素子分離領域の形成方法
JP2000012540A (ja) * 1998-06-18 2000-01-14 Sony Corp 溝配線の形成方法
JP3367496B2 (ja) * 2000-01-20 2003-01-14 株式会社ニコン 研磨体、平坦化装置、半導体デバイス製造方法、および半導体デバイス
JP2001009699A (ja) * 1999-07-05 2001-01-16 Nichiden Mach Ltd 平面研磨装置
JP2001077068A (ja) * 1999-09-08 2001-03-23 Sumitomo Metal Ind Ltd 半導体ウエハの研磨終点検出方法及びその装置
JP2002100594A (ja) * 2000-09-22 2002-04-05 Komatsu Electronic Metals Co Ltd 平面研磨方法および装置
JP4281255B2 (ja) * 2001-01-25 2009-06-17 株式会社デンソー ウエハ厚計測装置及びウエハ研磨方法
JP2003001559A (ja) * 2001-06-21 2003-01-08 Mitsubishi Electric Corp 化学的機械研磨方法、化学的機械研磨装置およびスラリー供給装置
JP2006095677A (ja) * 2004-08-30 2006-04-13 Showa Denko Kk 研磨方法
JP2006224233A (ja) * 2005-02-17 2006-08-31 Hoya Corp マスクブランクス用ガラス基板の製造方法及びマスクブランクスの製造方法
JP2006231471A (ja) * 2005-02-25 2006-09-07 Speedfam Co Ltd 両面ポリッシュ加工機とその定寸制御方法
JP2007290050A (ja) * 2006-04-21 2007-11-08 Hamai Co Ltd 研磨方法及び平面研磨装置

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JP2010034479A (ja) 2010-02-12

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