JP5028354B2 - Wafer polishing method - Google Patents
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- JP5028354B2 JP5028354B2 JP2008197741A JP2008197741A JP5028354B2 JP 5028354 B2 JP5028354 B2 JP 5028354B2 JP 2008197741 A JP2008197741 A JP 2008197741A JP 2008197741 A JP2008197741 A JP 2008197741A JP 5028354 B2 JP5028354 B2 JP 5028354B2
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- 238000005498 polishing Methods 0.000 title claims description 304
- 238000000034 method Methods 0.000 title claims description 46
- 239000002002 slurry Substances 0.000 claims description 46
- 239000004744 fabric Substances 0.000 claims description 32
- 238000005259 measurement Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 172
- 230000006866 deterioration Effects 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000012545 processing Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000000227 grinding Methods 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000003754 machining Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
本発明はウェーハの研磨方法に関し、詳しくは、高い平坦性を有する半導体用のウェーハを効率よく製造することのできるウェーハの研磨方法に関するものである。 The present invention relates to a method for polishing a wafer, and more particularly to a method for polishing a wafer capable of efficiently producing a semiconductor wafer having high flatness.
従来のウェーハの製造方法として、シリコンウェーハの製造方法を例に説明すると、例えば、先ず、チョクラルスキー法（ＣＺ法）等によってシリコン単結晶インゴットを育成し、得られたシリコン単結晶インゴットをスライスしてシリコンウェーハを作製した後、このシリコンウェーハに対して面取り、ラッピング、エッチングの各工程が順次なされ、次いで少なくともウェーハの一主面を鏡面化する研磨工程が施される。 As an example of a conventional wafer manufacturing method, a silicon wafer manufacturing method will be described. For example, first, a silicon single crystal ingot is grown by the Czochralski method (CZ method) and the obtained silicon single crystal ingot is sliced. After the silicon wafer is manufactured, the silicon wafer is sequentially subjected to chamfering, lapping and etching, and then a polishing process for mirroring at least one main surface of the wafer is performed.
このウェーハの研磨工程において、例えばシリコンウェーハの両面を研磨する場合に、両面研磨装置が用いられることがある。
このような両面研磨装置としては、通常、中心部のサンギヤと外周部のインターナルギヤの間にウェーハを保持するキャリアが配置された遊星歯車構造を有するいわゆる４ウェイ方式の両面研磨装置が用いられている。
In this wafer polishing step, for example, when polishing both sides of a silicon wafer, a double-side polishing apparatus may be used.
As such a double-side polishing apparatus, a so-called 4-way double-side polishing apparatus having a planetary gear structure in which a carrier for holding a wafer is disposed between a sun gear at a central portion and an internal gear at an outer peripheral portion is usually used. ing.
この４ウェイ方式の両面研磨装置は、ウェーハ保持孔が形成された複数のキャリアにシリコンウェーハを挿入・保持し、保持されたシリコンウェーハの上方から研磨スラリーを供給しながら、ウェーハの対向面に研磨布が貼付された上定盤および下定盤を各ウェーハの表裏面に押し付けて相対方向に回転させ、それと同時にキャリアをサンギヤとインターナルギヤとによって自転および公転させることで、シリコンウェーハの両面を同時に研磨することができるものである。 This 4-way double-side polishing machine inserts and holds a silicon wafer into a plurality of carriers in which wafer holding holes are formed, and polishes on the opposite surface of the wafer while supplying polishing slurry from above the held silicon wafer. The upper and lower surface plates with cloth attached are pressed against the front and back surfaces of each wafer and rotated in the relative direction. Simultaneously, the carrier is rotated and revolved by the sun gear and the internal gear, so that both sides of the silicon wafer are simultaneously It can be polished.
しかし、上述のような両面研磨装置を用いて研磨を行っても、平坦なウェーハを得ることはできても、生産性が低かったり、また逆に生産性が高くても平坦性の良くないウェーハになってしまうという問題があった。
これは、ウェーハの研磨速度と平坦性にはトレードオフの関係があるためである。そしてこの問題に対応するためには、仕上げの段階で、可能な限り研磨速度を下げ、準静的に加工する必要がある。
However, even if polishing is performed using the above-described double-side polishing apparatus, even if a flat wafer can be obtained, the productivity is low, and conversely, even if the productivity is high, the wafer is not flat. There was a problem of becoming.
This is because there is a trade-off relationship between the wafer polishing rate and flatness. In order to cope with this problem, it is necessary to reduce the polishing speed as much as possible and to perform quasi-static processing at the finishing stage.
そこで、同一の定盤上で、粒径やｐＨの異種なる研磨剤に切り替えたり（例えば特許文献１参照）、仕上がり付近で荷重を軽くしたり、回転数を下げて研磨する（例えば特許文献２参照）ことによって、平坦にかつ平滑に研磨する方法が用いられていた。 Therefore, on the same surface plate, it is possible to switch to abrasives having different particle sizes and pHs (for example, refer to Patent Document 1), to reduce the load near the finish, or to reduce the rotation speed (for example, Patent Document 2) Thus, a method of polishing flatly and smoothly has been used.
上述の方法では、１回の研磨サイクル（枚葉式では１枚、バッチ式では複数枚）の中で研磨条件（研磨剤の種類、研磨荷重、研磨布を貼り付けた定盤の研磨面に対する速度等）の切り替えを行ってきた。 In the above-described method, the polishing conditions (type of abrasive, polishing load, polishing surface of the surface plate to which the polishing cloth is attached) in one polishing cycle (one for a single wafer type, multiple for a batch type) Speed, etc.) has been switched.
しかし、上述の方法では、研磨布、キャリア等の加工治具、材料の劣化を見込んで研磨条件を変動させていない。このため、ウェーハ形状の外周ダレ等の不具合が生じたりした。これは、研磨を行うことによって上記材料に劣化が生じ、同一装置・同一条件で研磨を行っても、研磨条件（研磨速度等）が変動してしまうことである。
更に、研磨条件の変更のタイミングが、研磨布、キャリア等の加工治具、材料の劣化に係わらずいつも一定にしているため、研磨布の劣化とともに研磨時間が延びて生産性が悪化するといった問題や、研磨取り代の過不足等の問題が発生していた。
また、研磨前後や研磨中の厚さを抜き取りで計測して調整すれば、研磨取り代の過不足の問題が発生することは抑制しやすくなるが、研磨を途中で中断することになり、生産性が著しく悪化するため、現実的ではなかった。
However, in the above-described method, the polishing conditions are not changed in anticipation of deterioration of processing jigs and materials such as polishing cloth and carrier. For this reason, defects such as a wafer-shaped outer periphery sag have occurred. This is because the material is deteriorated by polishing, and the polishing conditions (polishing rate, etc.) fluctuate even if polishing is performed with the same apparatus and the same conditions.
Furthermore, since the timing of changing the polishing conditions is always constant regardless of the deterioration of the polishing cloth, processing jig such as carrier, and material, the problem is that the polishing time is prolonged and the productivity is deteriorated with the deterioration of the polishing cloth. In addition, problems such as excessive or insufficient polishing allowance have occurred.
Also, if the thickness is measured by adjusting the thickness before and after polishing and during polishing, it will be easy to suppress the problem of excess or insufficient polishing allowance, but polishing will be interrupted and production will be interrupted. It was not realistic because the sexuality deteriorated significantly.
また、ウェーハの研磨を行った場合、研磨布等の劣化によって研磨速度が異なってくる。こうなると、図６に示すように、研磨速度が速い場合と遅い場合で、目標厚さαまでの研磨時間が大きく異なることになる。このため、研磨仕上がりの目標厚さを一定としようとすれば、研磨工程に掛かる時間が安定せず、問題になっていた。また、研磨時間を一定にした場合、研磨速度が速い場合、オーバーポリッシュとなり、キズ等の不良が多く発生してしまい、歩留りが大きく悪化し、逆に研磨速度が遅い場合には研磨不足となり、平坦度が悪いウェーハになり、同じように歩留りが悪化してしまっていた。 Further, when the wafer is polished, the polishing rate varies depending on the deterioration of the polishing cloth or the like. In this case, as shown in FIG. 6, the polishing time to the target thickness α is greatly different depending on whether the polishing rate is fast or slow. For this reason, if the target thickness of the polishing finish is made constant, the time required for the polishing process is not stable, which is a problem. Further, when the polishing time constant, if the polishing rate is high, becomes over-polishing, defect number occurred by Mai of scratches, yield significantly worse, become insufficiently polished when the polishing rate in the reverse slow As a result, the wafer was poor in flatness, and the yield was similarly deteriorated.
そして、研磨中のウェーハの厚さを測定することによって、ウェーハの研磨仕上がり厚さを目標厚さαで一定にすることができるようにした場合を示したのが、図７である。
このように、ウェーハの厚さを測定することによって、仕上がりの厚さを目標厚さにすることができるが、研磨速度が速い場合と遅い場合で研磨時間が大きく異なってしまう。そのため、研磨工程に要する時間が安定せず、ウェーハ品質も不安定となって、ボトルネックとなっていた。
FIG. 7 shows a case where the thickness of the polished wafer can be made constant at the target thickness α by measuring the thickness of the wafer being polished.
Thus, by measuring the thickness of the wafer, the finished thickness can be set to the target thickness, but the polishing time differs greatly between when the polishing speed is high and when it is low. Therefore, the time required for the polishing process is not stable, the wafer quality becomes unstable, and this is a bottleneck.
本発明は上記問題点に鑑みてなされたものであり、高平坦性・高平滑性のウェーハを高い生産性で、歩留り良く製造することのできるウェーハの研磨方法を提供することを目的とする。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a wafer polishing method capable of manufacturing a highly flat and highly smooth wafer with high productivity and high yield.
上記課題を解決するため、本発明では、少なくとも、回転駆動する平坦な研磨上面を有する下定盤と、前記下定盤に対向して配置され回転駆動する平坦な研磨下面を有する上定盤と、ウェーハを保持するウェーハ保持孔を有するキャリアとによって、前記ウェーハを挟持して押圧摺動することで両面を同時に研磨するウェーハの研磨方法において、前記上定盤または前記下定盤の回転中心と周縁との間に設けた複数の窓から前記ウェーハの厚さを測定しながら研磨を行い、前記ウェーハの研磨途中で研磨速度の異なる研磨スラリーに切り替えることを特徴とするウェーハの研磨方法を提供する。 In order to solve the above-described problems, in the present invention, at least a lower surface plate having a flat polishing upper surface that is rotationally driven, an upper surface plate having a flat polishing lower surface that is disposed opposite to the lower surface plate and is rotationally driven, and a wafer In a wafer polishing method in which both surfaces are simultaneously polished by sandwiching and sliding on the wafer by a carrier having a wafer holding hole for holding the wafer, the rotation center and the periphery of the upper surface plate or the lower surface plate A method for polishing a wafer is provided, wherein polishing is performed while measuring the thickness of the wafer from a plurality of windows provided therebetween, and the polishing slurry is switched to a polishing slurry having a different polishing rate during the polishing of the wafer .
このように、両面を同時に研磨する際に、ウェーハの厚さを測定しながら研磨を行うことで、ウェーハの厚さをリアルタイムで評価することができる。このため、研磨を中断せずに研磨速度の異なるスラリーへの切り替えの時期や研磨状態の終点を知ることができ、研磨処理に掛かる時間を短くすることができる。
また、例えば最初に研磨速度の速い研磨スラリーでウェーハの研磨を行い、研磨途中で研磨速度の遅い研磨スラリーに切り替えることによって、まず粗いが高速な条件で研磨を行い、その後に低速だが精度の高い研磨を行うことができる。このため、ウェーハの研磨に掛かる時間を短縮することができ、またウェーハの平坦性・平滑性を損なうことなく生産性が高いものとすることができる。
これらによって、高生産性で歩留り良くウェーハを研磨することができ、高平坦性・高平滑性のウェーハを製造することができる。
As described above, when both surfaces are simultaneously polished, the thickness of the wafer can be evaluated in real time by performing the polishing while measuring the thickness of the wafer. Therefore, it is possible to know the timing of switching to a slurry having a different polishing rate and the end point of the polishing state without interrupting polishing, and the time required for the polishing process can be shortened.
Also, for example, by first polishing the wafer with a polishing slurry having a high polishing rate and switching to a polishing slurry having a low polishing rate during polishing, the polishing is first performed under rough but high speed conditions, and then the speed is low but high accuracy. Polishing can be performed. For this reason, the time required for polishing the wafer can be shortened, and the productivity can be increased without impairing the flatness and smoothness of the wafer.
As a result, the wafer can be polished with high productivity and high yield, and a wafer with high flatness and high smoothness can be manufactured.
また、前記複数の窓を、前記上定盤に設けることが好ましい。
上定盤に設けた複数の窓から、研磨中のウェーハの厚さを測定することによって、窓から研磨スラリーの漏れが発生することはなく、孔の中に研磨スラリーが進入することがないため、漏れ対策を行わなくても良い。これによって、定盤のメンテナンスが容易になり、またウェーハの厚さの測定に支障が生じる可能性を抑制することができる。
The plurality of windows are preferably provided on the upper surface plate .
By measuring the thickness of the wafer being polished from the multiple windows provided on the upper surface plate, there is no leakage of the polishing slurry from the window, and no polishing slurry enters the hole. It is not necessary to take measures against leakage. As a result, the maintenance of the surface plate is facilitated, and the possibility of trouble in measuring the thickness of the wafer can be suppressed.
また、前記ウェーハを、バッチ式で研磨することが好ましい。
本発明のウェーハの研磨方法は、高い生産性で平坦なウェーハとすることができるものであるため、バッチ式で研磨することによって、生産性をより高めることができる。また、本発明では複数の窓からウェーハ厚さを測定しながら研磨するので、バッチ式のように、同時に複数のウェーハを研磨する場合であっても、全てのウェーハの厚さを測定することができ、精度良く測定できる。
Moreover, it is preferable to grind | polish the said wafer by a batch type .
Since the wafer polishing method of the present invention can be a flat wafer with high productivity, the productivity can be further improved by polishing in a batch manner. In addition, since polishing is performed while measuring the wafer thickness from a plurality of windows in the present invention, it is possible to measure the thickness of all the wafers even when a plurality of wafers are polished at the same time as in the batch method. Can be measured accurately.
また、前記ウェーハの厚さの測定法は、波長可変赤外線レーザーによる光反射干渉法であることが好ましい。
このように、波長可変赤外線レーザーを用いて、ウェーハ表面での反射スペクトル（ウェーハ表面と裏面で反射する光の干渉の様子）を評価することによって、研磨中のウェーハ厚さを高精度で測定することができる。
The method for measuring the thickness of the wafer is preferably a light reflection interference method using a wavelength tunable infrared laser .
In this way, by using the wavelength tunable infrared laser, the wafer thickness during polishing is measured with high accuracy by evaluating the reflection spectrum on the wafer surface (the state of interference of light reflected on the wafer front and back surfaces). be able to.
また、前記研磨スラリーの切り替えタイミングは、研磨開始からの経過時間、研磨速度、研磨取り代、研磨布寿命のうち少なくとも１つ以上によって決定されるものとすることが好ましい。
このように、研磨スラリーの切り替えとして、研磨布の寿命や、研磨開始からの経過時間、研磨速度、研磨取り代によって決定することによって、研磨布、キャリア等の加工治具、材料等の劣化状態によって変化するウェーハの研磨状態に対して臨機応変に対応することができる。従って、目標のウェーハ形状、取り分け外周ダレの改善やフラットネスの安定化、狙い通りの研磨取代量をより容易に達成することができる。
In addition, it is preferable that the switching timing of the polishing slurry is determined by at least one of the elapsed time from the start of polishing, the polishing speed, the polishing allowance, and the polishing pad life .
As described above, by switching the polishing slurry, it is determined by the life of the polishing cloth, the elapsed time from the start of polishing, the polishing speed, the polishing allowance, and the deterioration state of the processing jig such as the polishing cloth and carrier, the material, etc. It is possible to respond flexibly to the polishing state of the wafer that changes depending on the case. Accordingly, it is possible to more easily achieve the target wafer shape, particularly the improvement of the peripheral sag, the stabilization of the flatness, and the target polishing allowance.
また、前記ウェーハの厚さの測定データを用いて、前記ウェーハの研磨途中で、研磨荷重、前記上定盤の回転速度、前記下定盤の回転速度のうち少なくとも１つ以上を変更することとすることが好ましい。
このように、ウェーハの研磨途中で研磨速度の異なるスラリーに切り替えるのみならず、研磨加重、上定盤の回転速度、下定盤の回転速度のうち少なくとも１つ以上を変更することで、ウェーハの研磨中に、研磨に用いる機構の劣化などによる研磨条件の変化によりきめ細かに適切に対応することができる。よって、研磨終了後の表面の平坦度が非常に高いウェーハを安定して得ることができる。
Further, at least one of the polishing load, the rotation speed of the upper surface plate, and the rotation speed of the lower surface plate is changed during the polishing of the wafer using the measurement data of the thickness of the wafer. It is preferable .
Thus, not only switching to a slurry having a different polishing rate during the polishing of the wafer, but also polishing the wafer by changing at least one of the polishing load, the rotation speed of the upper surface plate, and the rotation speed of the lower surface plate. In particular, it is possible to cope with fine and appropriate by changing the polishing conditions due to deterioration of the mechanism used for polishing. Therefore, it is possible to stably obtain a wafer having a very high flatness of the surface after polishing.
以上説明したように、本発明のウェーハの研磨方法によれば、研磨布、キャリア等の加工治具、材料等の劣化に伴って発生する研磨中での研磨条件の小さな変化によるウェーハ形状の悪化、例えば外周ダレを改善することができ、ウェーハ毎のフラットネスの安定性を得ることができる。
また、ウェーハの厚さを測定しながら研磨を行うため、研磨布、キャリア等の加工治具、材料等の劣化に応じて研磨剤の切り替えタイミングを変えることができ、比較的短時間で狙い通りの研磨取代量が得られる。このため、生産性が向上し、また厚さバラツキが非常に小さくなり、歩留りを大幅に改善することができる。
As described above, according to the wafer polishing method of the present invention, the wafer shape is deteriorated due to a small change in polishing conditions during polishing caused by deterioration of a processing jig such as a polishing cloth or a carrier, or a material. For example, the sagging of the outer periphery can be improved, and the flatness stability for each wafer can be obtained.
In addition, since polishing is performed while measuring the thickness of the wafer, it is possible to change the switching timing of the abrasive according to the deterioration of processing jigs, materials, etc., such as polishing cloths, carriers, etc. The amount of polishing allowance is obtained. For this reason, productivity is improved, thickness variation is extremely reduced, and yield can be greatly improved.
以下、本発明について詳細に説明するが、本発明はこれらに限定されるものではない。
本発明のウェーハの研磨方法に用いる両面研磨装置について図を用いて説明するが、もちろんこれに限定されるものではない。
Hereinafter, the present invention will be described in detail, but the present invention is not limited thereto.
The double-side polishing apparatus used for the wafer polishing method of the present invention will be described with reference to the drawings, but is not limited to this.
図５に示したように、両面研磨装置１０は、ウェーハＷを挟持するために、回転駆動する平坦な研磨上面を有する下定盤１２と、下定盤１２に対向して配置され回転駆動する平坦な研磨下面を有する上定盤１１と、ウェーハを保持するウェーハ保持孔を有するキャリア１３と、研磨中のウェーハＷの厚さを測定するためのウェーハ厚さ測定機構１６とを備えるものである。
そして、上定盤１１側に、研磨中のウェーハ厚さを測定するために複数の窓１４と、研磨スラリー供給機構１５が設けられている。
As shown in FIG. 5, the double-
A plurality of
また、ウェーハ厚さ測定機構１６は、少なくともウェーハにレーザー光を照射する光学ユニット１６ａと、ウェーハから反射されたレーザー光を検出するフォトディテクタ１６ｂと、レーザー光源ユニット１６ｃと、検出したレーザー光からウェーハ厚さを計算する演算・制御ユニット１６ｄとが備わっている。
また、詳しくは後述するが、研磨中に研磨荷重、上定盤１１の回転速度、下定盤１２の回転速度のうち少なくとも１つ以上を変更したい場合、研磨機制御ユニット１７を備えることによって、上定盤１１や下定盤１２を制御する。これによって、研磨荷重、上定盤１１の回転速度、下定盤１２の回転速度のうち少なくとも１つ以上を変更することができる。
The wafer
Further, as will be described in detail later, when it is desired to change at least one of the polishing load, the rotational speed of the
そしてこのような両面研磨装置を用いた本発明のウェーハの研磨方法について、具体的に説明するが、これに限定されるものではない。 The method for polishing a wafer of the present invention using such a double-side polishing apparatus will be specifically described, but the present invention is not limited to this.
まず、キャリアに研磨を行いたいウェーハをセットする。
そして上定盤の研磨下面と、下定盤の研磨上面と、キャリアによってウェーハを挟持して、研磨スラリーを供給しながら、上定盤及び下定盤を水平面内で回転させながら、研磨を開始する。
First, a wafer to be polished is set on a carrier.
Then, the polishing is started while the upper surface plate and the lower surface plate are rotated in the horizontal plane while the wafer is sandwiched between the upper surface plate and the lower surface plate by the carrier and the polishing slurry is supplied.
この際、上定盤または下定盤に設けられた複数の窓から、ウェーハの厚さを測定しながら研磨を行う。
これによって、研磨を中断せずに研磨中にウェーハの厚さを知ることができ、特に研磨中のウェーハ厚さを随時知ることができるため、ウェーハの目標厚さに達したかどうかを研磨しながら判断することができる。このため、研磨を中断することなく目標厚さに到達したかどうかを判定することができ、結果として研磨に掛かる時間を短くすることができる。
また、研磨時間を固定せずとも、ウェーハを目標厚さにすることができるため、研磨の過不足が発生することはなく、平坦度が悪化することを抑制することができる。すなわち、研磨布その他の劣化などにも対応できる。
At this time, polishing is performed while measuring the thickness of the wafer from a plurality of windows provided on the upper surface plate or the lower surface plate.
This makes it possible to know the thickness of the wafer during polishing without interrupting polishing, and in particular, to know the thickness of the wafer being polished at any time. Judgment can be made. For this reason, it is possible to determine whether or not the target thickness has been reached without interrupting the polishing, and as a result, the time required for polishing can be shortened.
Further, since the wafer can be set to the target thickness without fixing the polishing time, excessive or insufficient polishing does not occur, and deterioration of flatness can be suppressed. That is, it can cope with deterioration of the polishing cloth and the like.
また、本発明のウェーハの研磨方法では、あるタイミングで、研磨速度の異なる研磨スラリーに切り替える。
例えば、研磨初期には、研磨速度の速い研磨スラリーによって高速で粗く研磨する（高研磨レート条件）。そして、例えばウェーハの厚さが目標厚さγになった時点で切り替えを行う。この切り替えでは、研磨途中で研磨速度の遅い研磨スラリーに切り替えて低速で精度良く研磨する（低研磨レート条件）。
このような研磨方法であれば、トータルでウェーハの研磨に掛かる時間を短縮することができる。また、仕上げの段階で精度の高い研磨スラリーに切り替えて研磨を行っているため、研磨後のウェーハの平坦性を犠牲にすることもない。このため、平坦性・平滑性の高いウェーハを、高い生産性で得ることができる。
In the wafer polishing method of the present invention, the polishing slurry is switched to a polishing slurry having a different polishing rate at a certain timing.
For example, in the initial stage of polishing, polishing is performed roughly at high speed with a polishing slurry having a high polishing rate (high polishing rate condition). Then, for example, switching is performed when the thickness of the wafer reaches the target thickness γ. In this switching, the polishing slurry is switched to a polishing slurry having a low polishing rate during polishing, and polishing is performed accurately at low speed (low polishing rate condition).
With such a polishing method, the time required for polishing the wafer can be reduced in total. Further, since polishing is performed by switching to a highly accurate polishing slurry at the finishing stage, the flatness of the polished wafer is not sacrificed. For this reason, a wafer with high flatness and smoothness can be obtained with high productivity.
この場合、本発明では、複数の窓からウェーハ厚さを測定しているので、たとえバッチ式で複数のウェーハを同時に研磨する場合であっても、全てのウェーハの厚さを測定することができ、高精度で厚さを測定することができるので、高精度な研磨が可能である。 In this case, in the present invention, since the wafer thickness is measured from a plurality of windows, the thickness of all the wafers can be measured even when a plurality of wafers are polished simultaneously by a batch method. Since the thickness can be measured with high accuracy, polishing with high accuracy is possible.
ここで、上定盤に設けられた複数の窓から、ウェーハの厚さを測定することができる。
上定盤に設けた複数の窓からウェーハの厚さを測定することによって、窓をウェーハの上部に設置することができるため、研磨スラリーの漏れを抑制することができる。これによってスラリー漏れ対策を施す必要がなくなるため、定盤のメンテナンスを簡易化することができるが、下定盤に設けた複数の穴からウェーハの厚さを測定することももちろんできる。
Here, the thickness of the wafer can be measured from a plurality of windows provided on the upper surface plate.
By measuring the thickness of the wafer from a plurality of windows provided on the upper surface plate, the window can be installed on the upper part of the wafer, so that leakage of the polishing slurry can be suppressed. This eliminates the need for countermeasures against slurry leakage, so that the maintenance of the surface plate can be simplified. Of course, the thickness of the wafer can also be measured from a plurality of holes provided in the lower surface plate.
また、ウェーハの厚さの測定では、波長可変赤外線レーザーによる光反射干渉法で測定することができる。
このような、高速に波長掃引する「波長可変レーザー」光のウェーハ表面での反射強度から、反射の波長分散（反射スペクトル−ウェーハ表面と裏面で反射する光の干渉の様子）を再構成して周波数解析する光反射干渉法であれば、高い精度でウェーハの厚さを測定することができる。
In addition, the thickness of the wafer can be measured by a light reflection interference method using a wavelength tunable infrared laser.
From such reflection intensity of the “wavelength tunable laser” light that sweeps the wavelength at high speed on the wafer surface, the wavelength dispersion of reflection (reflection spectrum-interference of light reflected on the wafer surface and back surface) is reconstructed. If the light reflection interferometry is used for frequency analysis, the thickness of the wafer can be measured with high accuracy.
本発明において研磨スラリーの切り替えタイミングは、研磨開始からの経過時間、研磨速度、研磨取り代、研磨布寿命のうち少なくとも１つ以上によって決定されるものとすることができる。
ウェーハの研磨速度などの研磨条件は、研磨布、キャリア等の加工治具、材料等の劣化状態によって変化してしまう。
しかし、本発明では、複数の窓によりウェーハ厚さを逐次正確に測定しながら研磨しているので、研磨スラリーの切り替えタイミングの決定に、研磨布の寿命や、研磨開始からの経過時間、研磨速度、研磨取り代を用いることによって、ウェーハの研磨条件の僅かな変化に対して臨機応変に対応することができる。これによれば、研磨後のウェーハ形状を安定して高精度に平坦にすることができ、特に外周ダレを改善することができる。また、容易に狙い通りのウェーハ厚さにすることができる。
In the present invention, the switching timing of the polishing slurry can be determined by at least one of the elapsed time from the start of polishing, the polishing rate, the polishing allowance, and the polishing cloth life.
Polishing conditions such as the polishing rate of the wafer vary depending on the deterioration state of the polishing cloth, a processing jig such as a carrier, and materials.
However, in the present invention, polishing is performed while accurately measuring the wafer thickness with a plurality of windows successively, so that the polishing cloth life, the elapsed time from the start of polishing, the polishing rate are used to determine the polishing slurry switching timing. By using the polishing allowance, it is possible to respond flexibly to slight changes in wafer polishing conditions. According to this, the shape of the polished wafer can be stably and flattened with high accuracy, and in particular, the outer sag can be improved. In addition, the wafer thickness can be easily achieved as intended.
また、研磨中に、ウェーハの厚さの測定データを用いて、ウェーハの研磨途中で、研磨荷重、上定盤の回転速度、下定盤の回転速度のうち少なくとも１つ以上を変更することができる。
このように、ウェーハの研磨途中で研磨速度の異なるスラリーに切り替えるとともに、少なくとも、研磨加重、上定盤の回転速度、下定盤の回転速度のうち１つ以上を変更して研磨することによって、よりきめ細かに研磨速度などを研磨中に自由に変更することができる。従って、ウェーハの研磨中であっても研磨条件の変化に適切に対応することができる。よって、研磨終了後の表面の平坦度が非常に高いウェーハにすることができる。
Further, during polishing, at least one of the polishing load, the rotation speed of the upper surface plate, and the rotation speed of the lower surface plate can be changed during the polishing of the wafer using the measurement data of the wafer thickness. .
In this way, by switching to a slurry having a different polishing rate during polishing of the wafer, and by polishing at least one of the polishing load, the rotation speed of the upper surface plate, and the rotation speed of the lower surface plate, The polishing speed and the like can be freely changed during polishing. Accordingly, it is possible to appropriately cope with a change in polishing conditions even during wafer polishing. Therefore, a wafer having a very high flatness of the surface after polishing can be obtained.
そして、本発明では、ウェーハを、バッチ式で研磨することができる。
本発明のウェーハの研磨方法は、高い生産性で平坦なウェーハを製造することができるものである。このため、バッチ式で研磨することによって、生産性をより高めることができる。
And in this invention, a wafer can be grind | polished by a batch type.
The wafer polishing method of the present invention can produce a flat wafer with high productivity. For this reason, productivity can be improved more by grind | polishing by a batch type.
ここで、研磨スラリーの切り替えタイミングを、研磨布の寿命によって変更する場合を、図を用いてより具体的に説明するが、もちろんこれに限定されるものではない。
前述のように、研磨開始からの経過時間や、研磨速度、研磨取り代によっても切り替えタイミングを変更することができるし、複数を総合して切り替えタイミングを変更することももちろんできる。
Here, the case where the switching timing of the polishing slurry is changed according to the life of the polishing cloth will be described more specifically with reference to the drawings. However, the present invention is not limited to this.
As described above, the switching timing can be changed according to the elapsed time from the start of polishing, the polishing speed, and the polishing removal allowance, and it is of course possible to change the switching timing collectively for a plurality.
まず、図１を説明する。図１は、切り替えるタイミングを目標厚さで行った場合の本発明のウェーハの研磨方法のウェーハの研磨開始からの経過時間とウェーハの厚さの関係の一例を示したものである。
このように、随時厚さを測定しながら研磨を行っているので、所定目標厚さで確実にスラリーの切り替えが行えるとともに、最終的に得られるウェーハ厚さもバラツキのないものとすることができる。
First, FIG. 1 will be described. FIG. 1 shows an example of the relationship between the elapsed time from the start of wafer polishing and the wafer thickness in the wafer polishing method of the present invention when the switching timing is performed at the target thickness.
As described above, since the polishing is performed while measuring the thickness as needed, the slurry can be surely switched at a predetermined target thickness, and the finally obtained wafer thickness can be made uniform.
この場合、第１段の高速研磨が速いと、短時間で所定取り代（目標厚さγ）になるが、高速で研磨しているため、ウェーハ形状は悪化し易い。従って、本来は第２段の低速研磨をより長時間行い形状を整える必要がある。一方、研磨布の劣化などで、第１段の高速研磨の速度が低下すると、所定厚さになるまでに長時間を要するが、本来ウェーハ形状は良好となるので、第２段の低速研磨で短時間でウェーハ形状を仕上げることが可能である。しかし、上記のようにスラリーの切り替えを、目標厚さ、或いは取り代だけで行うと、第１段で悪化した形状を第２段で完全には修復できなかったり、必要以上に長時間の第１、第２研磨を行ってしまうことになり、より一層の改善が必要である。 In this case, if the first stage high-speed polishing is fast, the predetermined machining allowance (target thickness γ) is obtained in a short time, but since the polishing is performed at high speed, the wafer shape is likely to deteriorate. Therefore, it is originally necessary to adjust the shape by performing the second-stage low-speed polishing for a longer time . On the other hand, if the speed of the first stage high-speed polishing decreases due to deterioration of the polishing cloth, etc., it takes a long time to reach the predetermined thickness. It is possible to finish the wafer shape in a short time. However, if the switching of the slurry is performed only with the target thickness or the machining allowance as described above, the shape deteriorated in the first stage cannot be completely repaired in the second stage, or the first time is longer than necessary. First and second polishing will be performed, and further improvement is required.
そこで、例えば図２に示すように、研磨布の劣化に伴い最初の研磨スラリーでの目標厚さγと仕上がりの目標厚さαの比率を自動的に変動させることができる。但し目標厚さαは図１と同じである。
この研磨布の劣化は、研磨中の厚さ測定により得られた厚さデータから求めた研磨速度から決定する。また、予め、同じ種類の研磨布で研磨速度と延べ研磨時間との関係を蓄積し、平均的な研磨速度と延べ研磨時間の対応表と高速研磨スラリー、低速研磨スラリーの切り替え条件を作成しておくことができる。
Therefore, for example, as shown in FIG. 2, the ratio of the target thickness γ of the first polishing slurry to the target thickness α of the finish can be automatically changed with the deterioration of the polishing cloth. However, the target thickness α is the same as in FIG.
The deterioration of the polishing cloth is determined from the polishing rate obtained from the thickness data obtained by measuring the thickness during polishing. In addition, the relationship between the polishing speed and the total polishing time is accumulated in advance using the same type of polishing cloth, and the correspondence table between the average polishing speed and the total polishing time and the switching conditions for the high-speed polishing slurry and the low-speed polishing slurry are prepared. I can leave.
この場合、まず、ウェーハの研磨を開始し、研磨中のウェーハ厚さ測定により、随時研磨速度と延べ研磨時間をモニターし、既知の対応表と条件表を参照し、γを適宜自動的に変更することができる。 In this case, first, polishing of the wafer is started, and the polishing speed and total polishing time are monitored at any time by measuring the thickness of the wafer during polishing, and γ is automatically changed as needed by referring to the known correspondence table and condition table. can do.
例えば、研磨布を使用し始めた寿命初期の場合、研磨速度が速いため、高研磨レートの研磨スラリーを用いるとより早く研磨されるため、γをなるべく薄くし、例えばγ１とする。そして研磨布を使用し始めてからある程度時間がたち、安定したら、高研磨レートでの研磨スラリーでの研磨取り代を多くし、例えばγ２とする。そして研磨布が更に劣化して寿命が近づいて研磨速度が低下し始めたら、高研磨レートスラリーでの研磨取り代をより多く取るように、つまり高研磨レートスラリーでの目標厚さを例えばγ３とする。 For example, if the beginning of life that began using a polishing cloth, for faster polishing rate to be polished faster when using the polishing slurry of the high polishing rate, the gamma and as thin as possible, for example, gamma 1. And it stood some time from the start of using a polishing cloth, if stable, and a lot of polishing stock removal in the polishing slurry at a high polishing rate, for example, γ 2. When the polishing cloth further deteriorates and the life approaches and the polishing rate starts to decrease, the polishing allowance with the high polishing rate slurry is increased, that is, the target thickness with the high polishing rate slurry is set to, for example, γ 3 And
このようなウェーハの研磨方法であれば、研磨布の劣化によって発生する同一研磨スラリーの研磨領域での研磨条件の変化に柔軟に対応することができる。このため、ウェーハの加工時間の変動を小さくすることができ、結果としてスループットの向上を図ることができる。また、研磨布の寿命の初期において、高研磨レート条件での取り代をできるだけ少なくして、高速研磨による平坦度の悪化を防止することができる。また、研磨布寿命の末期では、研磨布寿命初期に比べて研磨速度の低下での取り代を、トレードオフの関係によって多くすることができ、これによって、低研磨レート条件での研磨時間を短くすることができ、総研磨時間が長くなることを抑制することができる。その上、ウェーハの平坦性・平滑性を高いものとすることができ、またそのようなウェーハを安定して得ることができる。 With such a wafer polishing method, it is possible to flexibly cope with a change in polishing conditions in the polishing region of the same polishing slurry generated by the deterioration of the polishing cloth. For this reason, the fluctuation | variation of the processing time of a wafer can be made small and the improvement of a throughput can be aimed at as a result. In addition, at the initial stage of the life of the polishing pad, the machining allowance under high polishing rate conditions can be reduced as much as possible to prevent deterioration of flatness due to high speed polishing. In addition, at the end of the polishing pad life, the allowance for lowering the polishing rate compared to the initial polishing cloth life can be increased due to the trade-off relationship, thereby shortening the polishing time under low polishing rate conditions. It is possible to suppress the increase in the total polishing time. In addition, the flatness and smoothness of the wafer can be made high, and such a wafer can be obtained stably.
以下、実施例及び比較例を示して本発明をより具体的に説明するが、本発明はこれらに限定されるものではない。
（実施例１）
図２に示すようなウェーハの研磨方法を用いてウェーハの研磨を行った。
研磨するウェーハとして、ＣＺ法で成長したインゴットよりワイヤソーでスライスして切り出した直径３００ｍｍのｐ−型のシリコン単結晶ウェーハを７２０枚用意した。このｐ−型とは、ｐ型の高抵抗率のウェーハのことである。これに通常の条件で面取り、ラッピング、エッチングを施した。
これに、図５で示した両面研磨装置を用いて、準備したシリコン単結晶ウェーハのうち２４０枚をバッチ式（１バッチ１５枚）で両面研磨を施した。研磨布としてはニッタハウスのＭＨ−Ｓ１５Ａを用いた。また、切り替え前の研磨スラリーはフジミＦＧＬ１１０２２番（高速研磨用）、切り替え後の研磨スラリーはフジミＦＧＬ２１００（低速研磨用）を用いて研磨した。但し、研磨後のウェーハの厚さは、全ウェーハで常に一定に保つこととした。
EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, this invention is not limited to these.
Example 1
It was polished wafer using a wafer polishing method as shown in FIG.
As a wafer to be polished, 720 p - type silicon single crystal wafers having a diameter of 300 mm, which were sliced with a wire saw from an ingot grown by the CZ method, were prepared. This p - type is a p-type high resistivity wafer. This was chamfered, lapped and etched under normal conditions.
The double-side polishing apparatus shown in FIG. 5 was used, and 240 of the prepared silicon single crystal wafers were subjected to double-side polishing in a batch system (15 batches). As the polishing cloth, MH-S15A manufactured by Nitta House was used. The polishing slurry before switching was polished using Fujimi FGL11022 (for high speed polishing), and the polishing slurry after switching was polished using Fujimi FGL2100 (for low speed polishing). However, the thickness of the polished wafer was always kept constant for all wafers.
またこの時、研磨中のウェーハ厚さを複数の窓から測定して、ウェーハの研磨速度を随時算出し、研磨回数毎の平均速度と延べ研磨時間の関係を保存したり、過去の値を参照比較し、ウェーハの厚さが予め設定していた厚さになったら研磨スラリーを切り替えた。 At this time, the thickness of the wafer being polished is measured from multiple windows, and the polishing rate of the wafer is calculated as needed, and the relationship between the average rate and the total polishing time for each number of polishings is saved, and past values are referenced. In comparison, the polishing slurry was switched when the wafer thickness reached a preset thickness.
そして、この研磨剤を切り替えるタイミングを、研磨布の寿命時間をＴとし、研磨布初期：Ｔ／５、中期：２Ｔ／５〜４Ｔ／５、末期：４Ｔ／５〜５Ｔ／５、と区分し、その区分に応じて切り替え前の研磨スラリーと切り替え後の研磨スラリーとの取り代比を２．７５：１から６．５：１、１４：１と、研磨布の寿命に応じて変化させて研磨を行った。 And the timing which changes this abrasive | polishing agent is set to the life time of polishing cloth as T, and polishing cloth initial stage: T / 5, middle period: 2T / 5-5T / 5, last stage: 4T / 5-5T / 5 Depending on the category, the removal allowance ratio between the polishing slurry before switching and the polishing slurry after switching is changed from 2.75: 1 to 6.5: 1, 14: 1 according to the life of the polishing cloth. Polishing was performed.
２４０枚のウェーハの研磨をこの方法によって同一の装置で行い、研磨後の研磨面の平坦度をＡＦＳ（ＡＤＥ社製静電容量型フラットネス測定装置）にて評価した。 240 wafers were polished by this method using the same apparatus, and the flatness of the polished surface after polishing was evaluated by AFS (a capacitance flatness measuring apparatus manufactured by ADE).
（比較例１）
図６において、研磨中に研磨スラリーの切り替えを行わずに、研磨時間を一定として、オーバーポリッシュや研磨不足が発生することを厭わないことにした以外は実施例と同じ条件で、準備した７２０枚のうち２４０枚のウェーハの研磨を行い、同様の評価を行った。
(Comparative Example 1)
In FIG. 6, 720 sheets prepared under the same conditions as in the example except that the polishing slurry is not changed during polishing, the polishing time is constant, and there is no problem with over polishing or insufficient polishing. Of these, 240 wafers were polished and evaluated in the same manner.
（比較例２）
図７に示すように、ウェーハの厚さを測定しながら研磨を行って研磨後のウェーハの目標厚さαを一定とするが、研磨中に研磨スラリーの切り替えを行わなかった以外は実施例と同じ条件で残りの２４０枚のウェーハの研磨を行い、同様の評価を行った。
(Comparative Example 2)
As shown in FIG. 7, polishing is performed while measuring the thickness of the wafer, and the target thickness α of the wafer after polishing is made constant, but the polishing slurry is not switched during polishing. The remaining 240 wafers were polished under the same conditions, and the same evaluation was performed.
その結果、図３（ａ）に示したように、実施例のウェーハの研磨方法は、ウェーハ毎のバラツキが小さく、高い精度で研磨を行えていたことが判った。これに対し、図３（ｂ）に示したように、比較例２のウェーハの研磨方法では、研磨布の寿命によって研磨後のウェーハの平坦度にばらつきが見られ、安定した研磨を行えていないことが判った。図示はしないが、比較例１のウェーハの研磨方法では、比較例２よりもバラツキが大きかった。 As a result, as shown in FIG. 3A, it was found that the wafer polishing method of the example had small variations from wafer to wafer and was polished with high accuracy. On the other hand, as shown in FIG. 3B, in the wafer polishing method of Comparative Example 2, the flatness of the wafer after polishing varies depending on the life of the polishing cloth, and stable polishing cannot be performed. I found out. Although not shown, the wafer polishing method of Comparative Example 1 had a larger variation than Comparative Example 2.
図４（ａ）に示すように、実施例のウェーハの研磨方法で研磨されたウェーハの表面形状は、面内が均一であり、また、外周ダレが無くなった。
これに対し、図４（ｂ）に示したように比較例２のウェーハの研磨方法によって研磨されたウェーハの表面形状は面内に分布を持っており、均一に研磨されていないことが判った。
As shown in FIG. 4A, the surface shape of the wafer polished by the wafer polishing method of the example was uniform in the surface and no sagging on the outer periphery.
On the other hand, as shown in FIG. 4B, it was found that the surface shape of the wafer polished by the wafer polishing method of Comparative Example 2 had an in-plane distribution and was not uniformly polished. .
ここで、比較例２のウェーハの研磨方法の研磨布寿命を１００とした時の実施例、各比較例の研磨布寿命に対する生産能力の比率を表１に示した。 Here, Table 1 shows the ratio of the production capacity to the polishing pad life of each of the examples and the comparative examples when the polishing pad life of the wafer polishing method of Comparative Example 2 is set to 100.
表１に示したように、実施例のウェーハの研磨方法は、比較例２の研磨布寿命中期の場合に比べ、研磨布の寿命に係わらず、高い生産能力を有しており、比較例２に比べて生産性が約１０％増加した。
これに対し、比較例１，２の研磨方法はともに研磨布の寿命に生産能力が左右され、安定しないことが判った。
As shown in Table 1, the wafer polishing method of the example has a higher production capacity regardless of the life of the polishing cloth as compared with the case of the middle life of the polishing cloth of Comparative Example 2, and Comparative Example 2 The productivity increased by about 10%.
On the other hand, it was found that the polishing methods of Comparative Examples 1 and 2 are unstable because the production capacity depends on the life of the polishing cloth.
なお、本発明は、上記実施形態に限定されるものではない。上記実施形態は例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。 The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.
１０…両面研磨装置、
１１…上定盤、 １２…下定盤、 １３…キャリア、 １４…窓、 １５…スラリー供給機構、
１６…ウェーハ厚さ測定機構、 １６ａ…光学ユニット、 １６ｂ…フォトディテクタ、 １６ｃ…レーザー光源ユニット、 １６ｄ…演算・制御機構、
１７…研磨機制御ユニット、
Ｗ…ウェーハ。
10: Double-side polishing device,
11 ... Upper surface plate, 12 ... Lower surface plate, 13 ... Carrier, 14 ... Window, 15 ... Slurry supply mechanism,
16 ... Wafer thickness measurement mechanism, 16a ... Optical unit, 16b ... Photo detector, 16c ... Laser light source unit, 16d ... Calculation / control mechanism,
17 ... polishing machine control unit,
W: Wafer.
Claims (3)
前記上定盤の回転中心と周縁との間に設けた複数の窓から前記ウェーハの厚さを波長可変赤外線レーザーによる光反射干渉法で測定しながら研磨を行い、前記ウェーハの研磨途中で研磨速度の異なる研磨スラリーに切り替え、該研磨スラリーの切り替えタイミングは研磨布寿命によって決定されることを特徴とするウェーハの研磨方法。 At least a lower surface plate having a flat polishing upper surface to be rotated, an upper surface plate having a flat polishing lower surface disposed opposite to the lower surface plate and driven to rotate, and a carrier having a wafer holding hole for holding a wafer. In the method for polishing a wafer in which both surfaces are simultaneously polished by sandwiching the wafer and pressing and sliding,
Polishing while measuring the thickness of the wafer from a plurality of windows provided between the rotation center and peripheral edge of the upper surface plate by a light reflection interference method using a wavelength tunable infrared laser, and polishing speed during polishing of the wafer A polishing method for a wafer , wherein the polishing slurry is switched to a different polishing slurry , and the switching timing of the polishing slurry is determined by the life of the polishing cloth .
At least one of a polishing load, a rotation speed of the upper surface plate, and a rotation speed of the lower surface plate is changed during polishing of the wafer using the measurement data of the thickness of the wafer. The method for polishing a wafer according to claim 1 or 2 .
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| JP2008197741A JP5028354B2 (en) | 2008-07-31 | 2008-07-31 | Wafer polishing method |
| US13/002,449 US8834230B2 (en) | 2008-07-31 | 2009-06-30 | Wafer polishing method and double-side polishing apparatus |
| DE112009001875.0T DE112009001875B4 (en) | 2008-07-31 | 2009-06-30 | Wafer polishing method and double side polishing device |
| SG2013053954A SG192518A1 (en) | 2008-07-31 | 2009-06-30 | Wafer polishing method |
| PCT/JP2009/003021 WO2010013390A1 (en) | 2008-07-31 | 2009-06-30 | Wafer polishing method and double side polishing apparatus |
| CN200980127186.4A CN102089121B (en) | 2008-07-31 | 2009-06-30 | Wafer polishing method and double side polishing apparatus |
| KR1020117002430A KR101587226B1 (en) | 2008-07-31 | 2009-06-30 | Wafer polishing method and double side polishing apparatus |
| TW098122953A TWI478226B (en) | 2008-07-31 | 2009-07-07 | Grinding method of double - sided grinding device and wafer |
| US14/446,847 US9108289B2 (en) | 2008-07-31 | 2014-07-30 | Double-side polishing apparatus |
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| DE102010013519B4 (en) | 2010-03-31 | 2012-12-27 | Siltronic Ag | Method for polishing a semiconductor wafer |
| CN105798767B (en) * | 2011-03-15 | 2018-01-30 | 旭硝子株式会社 | The Ginding process and lapping device of plate body |
| JP6448314B2 (en) * | 2014-11-06 | 2019-01-09 | 株式会社ディスコ | Polishing liquid and method for polishing SiC substrate |
| JP6510348B2 (en) * | 2015-07-23 | 2019-05-08 | 株式会社荏原製作所 | Substrate processing apparatus, substrate processing system, and substrate processing method |
| US11897081B2 (en) | 2016-03-01 | 2024-02-13 | Fujimi Incorporated | Method for polishing silicon substrate and polishing composition set |
| JP6649828B2 (en) * | 2016-03-28 | 2020-02-19 | 株式会社フジミインコーポレーテッド | Polishing method of silicon substrate and polishing composition set |
| CN116442112B (en) * | 2023-06-16 | 2023-10-03 | 合肥晶合集成电路股份有限公司 | Wafer grinding control method, system, device, equipment and storage medium |
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| JPH11135617A (en) * | 1997-10-31 | 1999-05-21 | Nippon Steel Corp | Formation method for element isolation region |
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| JP3367496B2 (en) * | 2000-01-20 | 2003-01-14 | 株式会社ニコン | Polishing body, planarization apparatus, semiconductor device manufacturing method, and semiconductor device |
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