JP5025095B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5025095B2
JP5025095B2 JP2005124371A JP2005124371A JP5025095B2 JP 5025095 B2 JP5025095 B2 JP 5025095B2 JP 2005124371 A JP2005124371 A JP 2005124371A JP 2005124371 A JP2005124371 A JP 2005124371A JP 5025095 B2 JP5025095 B2 JP 5025095B2
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Prior art keywords
film
insulating film
substrate
tft
layer
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Expired - Fee Related
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JP2005124371A
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English (en)
Japanese (ja)
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JP2006054425A (ja
JP2006054425A5 (https=
Inventor
哲司 山口
悦子 浅野
尚美 矢崎
智哉 二村
智子 西川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005124371A priority Critical patent/JP5025095B2/ja
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Publication of JP2006054425A5 publication Critical patent/JP2006054425A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2005124371A 2004-05-07 2005-04-22 半導体装置の作製方法 Expired - Fee Related JP5025095B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005124371A JP5025095B2 (ja) 2004-05-07 2005-04-22 半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004139148 2004-05-07
JP2004139148 2004-05-07
JP2004205413 2004-07-13
JP2004205413 2004-07-13
JP2005124371A JP5025095B2 (ja) 2004-05-07 2005-04-22 半導体装置の作製方法

Publications (3)

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JP2006054425A JP2006054425A (ja) 2006-02-23
JP2006054425A5 JP2006054425A5 (https=) 2008-05-08
JP5025095B2 true JP5025095B2 (ja) 2012-09-12

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JP2005124371A Expired - Fee Related JP5025095B2 (ja) 2004-05-07 2005-04-22 半導体装置の作製方法

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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100846586B1 (ko) * 2006-05-29 2008-07-16 삼성에스디아이 주식회사 유기 발광 소자 및 이를 구비한 평판 표시 장치
US8188315B2 (en) 2004-04-02 2012-05-29 Samsung Mobile Display Co., Ltd. Organic light emitting device and flat panel display device comprising the same
TWI839708B (zh) 2006-05-16 2024-04-21 日商半導體能源研究所股份有限公司 液晶顯示裝置
JP5371143B2 (ja) * 2006-10-12 2013-12-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101414125B1 (ko) * 2006-10-12 2014-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조 방법 및 에칭장치
JP5428142B2 (ja) * 2007-09-11 2014-02-26 カシオ計算機株式会社 表示パネルの製造方法
US8945981B2 (en) * 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2178133B1 (en) * 2008-10-16 2019-09-18 Semiconductor Energy Laboratory Co., Ltd. Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device
KR101065413B1 (ko) * 2009-07-03 2011-09-16 삼성모바일디스플레이주식회사 유기전계발광표시장치 및 그의 제조방법
KR102369012B1 (ko) 2009-09-16 2022-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
KR101876473B1 (ko) * 2009-11-06 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102067051B1 (ko) * 2011-10-24 2020-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP6345544B2 (ja) * 2013-09-05 2018-06-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI665778B (zh) * 2014-02-05 2019-07-11 日商半導體能源研究所股份有限公司 半導體裝置、模組及電子裝置
JP2015188062A (ja) 2014-02-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
JP2020161640A (ja) * 2019-03-26 2020-10-01 株式会社ジャパンディスプレイ 半導体装置及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0855857A (ja) * 1994-08-15 1996-02-27 Yamaha Corp 絶縁膜加工法
JP2000349301A (ja) * 1999-04-01 2000-12-15 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4776752B2 (ja) * 2000-04-19 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置
JP2003243327A (ja) * 2002-02-20 2003-08-29 Seiko Epson Corp 電子デバイス、配線形成方法および配線形成装置
JP2003282561A (ja) * 2002-03-26 2003-10-03 Seiko Epson Corp デバイスの製造方法及びデバイス製造装置

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