JP5021666B2 - 光結晶構造体を有する発光素子及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 127
- 239000004038 photonic crystal Substances 0.000 claims description 53
- 238000005530 etching Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 239000011810 insulating material Substances 0.000 claims description 9
- 230000000737 periodic effect Effects 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- 238000003491 array Methods 0.000 description 11
- 238000000605 extraction Methods 0.000 description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910010199 LiAl Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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Description
前記発光セル28のそれぞれは、第1の導電型半導体層25、第1の導電型半導体層の一領域上に位置する第2の導電型半導体層29、前記第1の導電型半導体層と第2の導電型半導体層との間に介在された活性層27を有する。ここで、前記第1の導電型及び第2の導電型は、それぞれn型及びp型、又はp型及びn型である。
図4を参照すると、基板21上に、第1の導電型半導体層25、活性層27、及び第2の導電型半導体層29を形成する。また、前記第1の導電型半導体層25を形成する前、前記基板21上にバッファ層23を形成してもよい。
Claims (9)
- 第1の導電型半導体層、前記第1の導電型半導体層の一領域上に位置する第2の導電型半導体層、前記第1の導電型半導体層と第2の導電型半導体層との間に介在された活性層、前記第2の導電型半導体層に形成された光結晶構造体及び前記第2の導電型半導体層の上面に形成される透明電極を有する複数個の発光セルと、
前記複数個の発光セルを電気的に連結する金属配線と、
を備え、
前記光結晶構造は、所定の高さを有する前記第2の導電型半導体層からなる複数の凸部と、前記の活性層の上面から前記凸部と略同一の高さまで絶縁物質が満たされてなる凹部とからなることを特徴とする発光素子。 - 前記光結晶構造体は、二次元的に配列された空孔の格子を有することを特徴とする請求項1に記載の発光素子。
- 前記光結晶構造体は、前記第2の導電型半導体層に形成された周期的な凹凸を有することを特徴とする請求項1に記載の発光素子。
- 前記光結晶構造体は、第2の導電型半導体ロッドの格子を有することを特徴とする請求項1に記載の発光素子。
- 前記第1の導電型半導体層の他の領域上に形成された第1の電極パッドと、
前記第2の導電型半導体層を覆う透明電極と、
前記透明電極上に形成された第2の電極パッドと、をさらに備え、
前記金属配線は、隣接した発光セルの第1の電極パッドと第2の電極パッドを連結することを特徴とする請求項1に記載の発光素子。 - 基板上に、第1の導電型半導体層、活性層、及び第2の導電型半導体層を形成するステップと、
前記第2の導電型半導体層、活性層、及び前記第1の導電型半導体層をパターニングするステップを含み、複数個の発光セルを形成するが、前記複数個の発光セルのそれぞれは、分離された第1の導電型半導体層、前記分離された第1の導電型半導体層の一領域上に位置する第2の導電型半導体層、前記分離された第1の導電型半導体層と第2の導電型半導体層との間に介在された活性層、及び前記第2の導電型半導体層に形成された光結晶構造体を備え、
前記光結晶構造は、所定の高さを有する前記第2の導電型半導体層からなる複数の凸部と、前記の活性層の上面から前記凸部と略同一の高さまで絶縁物質が満たされてなる凹部とからなり、
前記第2の導電型半導体層の上面に透明電極を形成するステップと、
前記光結晶構造体を有する発光セルを電気的に連結する金属配線を形成するステップと、
を含むことを特徴とする発光素子の製造方法。 - 前記光結晶構造体は、前記第2の導電型半導体層をエッチングして形成されたことを特徴とする請求項6に記載の発光素子の製造方法。
- 前記光結晶構造体を有する第2の導電型半導体層上に透明電極を形成するステップをさらに含むことを特徴とする請求項7に記載の発光素子の製造方法。
- 前記第1の導電型半導体層の他の領域上に第1の電極パッドを形成するステップと、
前記透明電極上に第2の電極パッドを形成するステップと、をさらに含み、
前記金属配線は、隣接した発光セルの前記第1の電極パッドと第2の電極パッドを連結することを特徴とする請求項8に記載の発光素子の製造方法。
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KR10-2005-0107516 | 2005-11-10 | ||
KR1020050107516A KR100721454B1 (ko) | 2005-11-10 | 2005-11-10 | 광 결정 구조체를 갖는 교류용 발광소자 및 그것을제조하는 방법 |
PCT/KR2006/003541 WO2007055468A1 (en) | 2005-11-10 | 2006-09-06 | Ac light emitting device having photonic crystal structure and method of fabricating the same |
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JP (1) | JP5021666B2 (ja) |
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US7012279B2 (en) * | 2003-10-21 | 2006-03-14 | Lumileds Lighting U.S., Llc | Photonic crystal light emitting device |
EP1700344B1 (en) | 2003-12-24 | 2016-03-02 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor light emitting device and lighting module |
TWI233218B (en) | 2004-01-08 | 2005-05-21 | Pamelan Company Ltd | One dimensional photonic crystal and light emitting device made from the same |
TWI238546B (en) | 2004-01-08 | 2005-08-21 | Han Shin Company Ltd | Light emitting diode utilizing a photonic crystal and device made from the same |
US7250635B2 (en) * | 2004-02-06 | 2007-07-31 | Dicon Fiberoptics, Inc. | Light emitting system with high extraction efficency |
US20050205883A1 (en) * | 2004-03-19 | 2005-09-22 | Wierer Jonathan J Jr | Photonic crystal light emitting device |
TWI244771B (en) | 2004-04-09 | 2005-12-01 | Global Fiberoptocs Inc | A solid state light-emitting device with high extra efficiency and a method of manufacturing the device |
US7483469B2 (en) * | 2004-11-01 | 2009-01-27 | Seiko Epson Corporation | Surface-emitting type semiconductor laser and its manufacturing method, optical module, and light transmission device |
KR101274041B1 (ko) * | 2004-12-31 | 2013-06-12 | 서울반도체 주식회사 | 발광 장치 |
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2005
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Also Published As
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TWI322516B (en) | 2010-03-21 |
US7901964B2 (en) | 2011-03-08 |
JP2009516370A (ja) | 2009-04-16 |
TW200719498A (en) | 2007-05-16 |
US20090311816A1 (en) | 2009-12-17 |
KR100721454B1 (ko) | 2007-05-23 |
WO2007055468A1 (en) | 2007-05-18 |
KR20070050215A (ko) | 2007-05-15 |
US8716727B2 (en) | 2014-05-06 |
US20080237613A1 (en) | 2008-10-02 |
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