JP2009033181A - 光子結晶発光素子 - Google Patents
光子結晶発光素子 Download PDFInfo
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- JP2009033181A JP2009033181A JP2008196949A JP2008196949A JP2009033181A JP 2009033181 A JP2009033181 A JP 2009033181A JP 2008196949 A JP2008196949 A JP 2008196949A JP 2008196949 A JP2008196949 A JP 2008196949A JP 2009033181 A JP2009033181 A JP 2009033181A
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- JP
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- Prior art keywords
- light emitting
- photonic crystal
- semiconductor layer
- nanorod
- emitting structures
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- 239000004038 photonic crystal Substances 0.000 title claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 75
- 239000002073 nanorod Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000000605 extraction Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 description 15
- 239000013078 crystal Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 238000004088 simulation Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 230000006872 improvement Effects 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- -1 that is Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】基板と、上記基板上に相互離隔され形成され、第1導電型半導体層、活性層及び第2導電型半導体層が順次に形成されてなる複数のナノロッド発光構造物及び上記第1及び第2導電型半導体層に夫々電気的に連結された第1及び第2電極を含み、上記複数のナノロッド発光構造物は上記活性層から放出された光に対して光子バンドギャップを形成することができる大きさと周期で配列され光子結晶構造をなすことを特徴とする光子結晶発光素子を提供する。
【選択図】 図1
Description
12 n型半導体層
N ナノロッド発光構造物
13 n型半導体層
14 活性層
15 p型半導体層
16 p型半導体層
17a n側電極
17b p側電極
51 オーム接触層
Claims (11)
- 基板と、
前記基板上に相互離隔されて形成され、第1導電型の第1半導体層、活性層及び第2導電型の第2半導体層が順に形成されてなる複数のナノロッド発光構造物と、
前記第1半導体層及び前記第2半導体層に夫々電気的に連結された第1電極及び第2電極と、を含み、
前記複数のナノロッド発光構造物は、前記活性層から放出された光に対して光子バンドギャップを形成することができる大きさと周期で配列され光子結晶構造をなすことを特徴とする光子結晶発光素子。 - 前記複数のナノロッド発光構造物の間を埋め、前記発光構造物を物質の光屈折率と異なる光屈折率を有する物質をさらに含むことを特徴とする請求項1に記載の光子結晶発光素子。
- 前記複数のナノロッド発光構造物の間を埋める物質は、SiO2であることを特徴とする請求項2に記載の光子結晶発光素子。
- 前記複数のナノロッド発光構造物の底面の形状は円形で、その半径rと配列周期aは次の条件、
0.01≦r/a≦0.5を満たすことを特徴とする請求項1に記載の光子結晶発光素子。 - 前記複数のナノロッド発光構造物の底面の形状は、円形または四角形であることを特徴とする請求項1に記載の光子結晶発光素子。
- 前記複数のナノロッド発光構造物上に前記複数のナノロッド発光構造物を覆うよう形成された前記第2導電型の第3半導体層をさらに含むことを特徴とする請求項1に記載の光子結晶発光素子。
- 前記複数のナノロッド発光構造物上に前記複数のナノロッド発光構造物を覆うよう形成されたオーム接触層をさらに含むことを特徴とする請求項1に記載の光子結晶発光素子。
- 前記基板と複数のナノ発光構造物の間に形成された前記第1導電型の第3半導体層をさらに含むことを特徴とする請求項1に記載の光子結晶発光素子。
- 前記第1半導体層及び前記第2半導体層は、夫々n型半導体層及びp型半導体層であることを特徴とする請求項1に記載の光子結晶発光素子。
- 前記第1半導体層、前記活性層及び前記第2半導体層は、窒化物からなることを特徴とする請求項1に記載の光子結晶発光素子。
- 前記複数のナノロッド発光構造物の大きさは、前記活性層から放出された光の波長より小さいか同じであることを特徴とする請求項1に記載の光子結晶発光素子。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070076375A KR20090012493A (ko) | 2007-07-30 | 2007-07-30 | 광자결정 발광소자 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009033181A true JP2009033181A (ja) | 2009-02-12 |
Family
ID=40337272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008196949A Pending JP2009033181A (ja) | 2007-07-30 | 2008-07-30 | 光子結晶発光素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7763881B2 (ja) |
JP (1) | JP2009033181A (ja) |
KR (1) | KR20090012493A (ja) |
Cited By (5)
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---|---|---|---|---|
CN109920887A (zh) * | 2019-03-11 | 2019-06-21 | 北京大学 | 一种发光二极管芯片及其制造方法 |
CN109920888A (zh) * | 2019-03-11 | 2019-06-21 | 北京大学 | 一种发光二极管芯片及其制造方法 |
JP2019149503A (ja) * | 2018-02-28 | 2019-09-05 | セイコーエプソン株式会社 | 発光装置およびその製造方法、ならびにプロジェクター |
JP2021529430A (ja) * | 2018-06-20 | 2021-10-28 | アルディア | ダイオードアレイを備えた光電子デバイス |
KR102608234B1 (ko) * | 2022-10-20 | 2023-11-30 | 전북대학교산학협력단 | 수직 광방출 나노로드 레이저 다이오드 및 그 제조 방법 |
Families Citing this family (17)
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KR101283282B1 (ko) * | 2007-07-25 | 2013-07-11 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 그 제조방법 |
TWI389346B (zh) * | 2008-10-01 | 2013-03-11 | Epistar Corp | 光電元件 |
TWI379443B (en) * | 2008-11-28 | 2012-12-11 | Univ Nat Taiwan | A lighting device having high efficiency and a method for fabricating the same |
US20110077994A1 (en) * | 2009-09-30 | 2011-03-31 | International Business Machines Corporation | Optimization of workforce scheduling and capacity planning |
US9041931B2 (en) | 2009-10-09 | 2015-05-26 | Rudolph Technologies, Inc. | Substrate analysis using surface acoustic wave metrology |
KR100974626B1 (ko) * | 2009-12-22 | 2010-08-09 | 동국대학교 산학협력단 | 접촉 구조의 나노로드 반도체 소자 및 그 제조 방법 |
KR101148758B1 (ko) * | 2009-12-30 | 2012-05-21 | 순천대학교 산학협력단 | 발광다이오드 및 이의 제조방법 |
KR101643757B1 (ko) * | 2010-06-01 | 2016-07-29 | 삼성전자주식회사 | 발광소자 및 그 제조방법 |
WO2013022129A1 (ko) * | 2011-08-09 | 2013-02-14 | 삼성전자주식회사 | 질화물 반도체 발광소자 |
US9439250B2 (en) * | 2012-09-24 | 2016-09-06 | Samsung Electronics Co., Ltd. | Driving light emitting diode (LED) lamps using power received from ballast stabilizers |
CN103022300A (zh) * | 2012-12-27 | 2013-04-03 | 中国科学院半导体研究所 | 制作微纳米柱发光二极管的方法 |
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CN109037267B (zh) * | 2018-06-29 | 2021-09-14 | 天津工业大学 | 金属光子晶体耦合增强nano-LED阵列及制造方法 |
FR3118289A1 (fr) * | 2020-12-17 | 2022-06-24 | Aledia | Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial |
KR102549934B1 (ko) | 2021-03-11 | 2023-06-30 | 임경민 | 골프 스윙 연습용 손목 보호대 |
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US20030141507A1 (en) * | 2002-01-28 | 2003-07-31 | Krames Michael R. | LED efficiency using photonic crystal structure |
JP2005228936A (ja) * | 2004-02-13 | 2005-08-25 | Dongguk Univ | 発光ダイオードおよびその製造方法 |
JP2006352148A (ja) * | 2005-06-17 | 2006-12-28 | Philips Lumileds Lightng Co Llc | 半導体発光装置に成長させたフォトニック結晶 |
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JP2004134501A (ja) | 2002-10-09 | 2004-04-30 | Sony Corp | 発光素子及びその作製方法 |
WO2006060599A2 (en) * | 2004-12-02 | 2006-06-08 | The Regents Of The University Of California | Semiconductor devices based on coalesced nano-rod arrays |
JP4740795B2 (ja) * | 2005-05-24 | 2011-08-03 | エルジー エレクトロニクス インコーポレイティド | ロッド型発光素子及びその製造方法 |
-
2007
- 2007-07-30 KR KR1020070076375A patent/KR20090012493A/ko not_active Application Discontinuation
-
2008
- 2008-07-30 JP JP2008196949A patent/JP2009033181A/ja active Pending
- 2008-07-30 US US12/182,509 patent/US7763881B2/en not_active Expired - Fee Related
Patent Citations (4)
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WO1998025314A1 (en) * | 1996-12-02 | 1998-06-11 | Massachusetts Institute Of Technology | Light emitting device utilizing a periodic dielectric structure |
US20030141507A1 (en) * | 2002-01-28 | 2003-07-31 | Krames Michael R. | LED efficiency using photonic crystal structure |
JP2005228936A (ja) * | 2004-02-13 | 2005-08-25 | Dongguk Univ | 発光ダイオードおよびその製造方法 |
JP2006352148A (ja) * | 2005-06-17 | 2006-12-28 | Philips Lumileds Lightng Co Llc | 半導体発光装置に成長させたフォトニック結晶 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019149503A (ja) * | 2018-02-28 | 2019-09-05 | セイコーエプソン株式会社 | 発光装置およびその製造方法、ならびにプロジェクター |
JP7097567B2 (ja) | 2018-02-28 | 2022-07-08 | セイコーエプソン株式会社 | 発光装置およびその製造方法、ならびにプロジェクター |
JP2021529430A (ja) * | 2018-06-20 | 2021-10-28 | アルディア | ダイオードアレイを備えた光電子デバイス |
JP7366071B2 (ja) | 2018-06-20 | 2023-10-20 | アルディア | ダイオードアレイを備えた光電子デバイス |
CN109920887A (zh) * | 2019-03-11 | 2019-06-21 | 北京大学 | 一种发光二极管芯片及其制造方法 |
CN109920888A (zh) * | 2019-03-11 | 2019-06-21 | 北京大学 | 一种发光二极管芯片及其制造方法 |
CN109920888B (zh) * | 2019-03-11 | 2022-01-25 | 北京大学 | 一种发光二极管芯片及其制造方法 |
CN109920887B (zh) * | 2019-03-11 | 2022-01-25 | 北京大学 | 一种发光二极管芯片及其制造方法 |
KR102608234B1 (ko) * | 2022-10-20 | 2023-11-30 | 전북대학교산학협력단 | 수직 광방출 나노로드 레이저 다이오드 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
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US20090032800A1 (en) | 2009-02-05 |
KR20090012493A (ko) | 2009-02-04 |
US7763881B2 (en) | 2010-07-27 |
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