JP5011631B2 - 半導体製造装置および半導体製造システム - Google Patents
半導体製造装置および半導体製造システム Download PDFInfo
- Publication number
- JP5011631B2 JP5011631B2 JP2004163892A JP2004163892A JP5011631B2 JP 5011631 B2 JP5011631 B2 JP 5011631B2 JP 2004163892 A JP2004163892 A JP 2004163892A JP 2004163892 A JP2004163892 A JP 2004163892A JP 5011631 B2 JP5011631 B2 JP 5011631B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gas flow
- vertical blowing
- supply means
- semiconductor manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 126
- 238000004519 manufacturing process Methods 0.000 title claims description 81
- 238000007664 blowing Methods 0.000 claims description 120
- 239000000758 substrate Substances 0.000 claims description 79
- 238000006243 chemical reaction Methods 0.000 claims description 70
- 230000015572 biosynthetic process Effects 0.000 claims description 33
- 230000004913 activation Effects 0.000 claims description 30
- 230000003213 activating effect Effects 0.000 claims description 29
- 239000002994 raw material Substances 0.000 claims description 12
- 238000011144 upstream manufacturing Methods 0.000 claims description 9
- 229910021478 group 5 element Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 350
- 239000010408 film Substances 0.000 description 78
- 239000000203 mixture Substances 0.000 description 27
- 239000010409 thin film Substances 0.000 description 23
- 239000010453 quartz Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- -1 pressure Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004163892A JP5011631B2 (ja) | 2004-06-01 | 2004-06-01 | 半導体製造装置および半導体製造システム |
| US11/006,578 US20050263071A1 (en) | 2004-06-01 | 2004-12-08 | Apparatus and system for manufacturing a semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004163892A JP5011631B2 (ja) | 2004-06-01 | 2004-06-01 | 半導体製造装置および半導体製造システム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005347426A JP2005347426A (ja) | 2005-12-15 |
| JP2005347426A5 JP2005347426A5 (enExample) | 2007-07-12 |
| JP5011631B2 true JP5011631B2 (ja) | 2012-08-29 |
Family
ID=35423809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004163892A Expired - Lifetime JP5011631B2 (ja) | 2004-06-01 | 2004-06-01 | 半導体製造装置および半導体製造システム |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20050263071A1 (enExample) |
| JP (1) | JP5011631B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008111401A1 (ja) * | 2007-03-14 | 2008-09-18 | Sekisui Chemical Co., Ltd. | 窒化ガリウム等のiii族窒化物の成膜方法 |
| US20090258162A1 (en) * | 2008-04-12 | 2009-10-15 | Applied Materials, Inc. | Plasma processing apparatus and method |
| CN103229280A (zh) * | 2010-11-17 | 2013-07-31 | 东京毅力科创株式会社 | 等离子体处理用设备和等离子体处理用方法 |
| US20230390811A1 (en) * | 2022-06-06 | 2023-12-07 | Applied Materials, Inc. | Throttle valve and foreline cleaning using a microwave source |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0103461B1 (en) * | 1982-09-10 | 1988-11-17 | Nippon Telegraph And Telephone Corporation | Plasma deposition method and apparatus |
| JP2598336B2 (ja) * | 1990-09-21 | 1997-04-09 | 株式会社日立製作所 | プラズマ処理装置 |
| JPH07161647A (ja) * | 1993-12-07 | 1995-06-23 | Sony Corp | 表面処理装置 |
| JP3151596B2 (ja) * | 1995-07-20 | 2001-04-03 | 東京エレクトロン株式会社 | プラズマ処理方法およびその装置 |
| US6152070A (en) * | 1996-11-18 | 2000-11-28 | Applied Materials, Inc. | Tandem process chamber |
| US6194038B1 (en) * | 1998-03-20 | 2001-02-27 | Applied Materials, Inc. | Method for deposition of a conformal layer on a substrate |
| JP2976965B2 (ja) * | 1998-04-02 | 1999-11-10 | 日新電機株式会社 | 成膜方法及び成膜装置 |
| JP2000188257A (ja) * | 1998-12-22 | 2000-07-04 | Sharp Corp | 結晶性シリコン系半導体薄膜の製造方法 |
| JP3757698B2 (ja) * | 1999-09-07 | 2006-03-22 | 富士ゼロックス株式会社 | 半導体製造装置および半導体製造システム |
| JP2001177099A (ja) * | 1999-12-14 | 2001-06-29 | Furontekku:Kk | 薄膜トランジスタの製造方法およびアクティブマトリクス基板ならびに薄膜成膜装置 |
| US7115516B2 (en) * | 2001-10-09 | 2006-10-03 | Applied Materials, Inc. | Method of depositing a material layer |
-
2004
- 2004-06-01 JP JP2004163892A patent/JP5011631B2/ja not_active Expired - Lifetime
- 2004-12-08 US US11/006,578 patent/US20050263071A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20050263071A1 (en) | 2005-12-01 |
| JP2005347426A (ja) | 2005-12-15 |
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