JP2005347426A5 - - Google Patents

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Publication number
JP2005347426A5
JP2005347426A5 JP2004163892A JP2004163892A JP2005347426A5 JP 2005347426 A5 JP2005347426 A5 JP 2005347426A5 JP 2004163892 A JP2004163892 A JP 2004163892A JP 2004163892 A JP2004163892 A JP 2004163892A JP 2005347426 A5 JP2005347426 A5 JP 2005347426A5
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JP
Japan
Prior art keywords
electrode
electrodes
gas flow
central axis
cylindrical electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2004163892A
Other languages
English (en)
Japanese (ja)
Other versions
JP5011631B2 (ja
JP2005347426A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004163892A priority Critical patent/JP5011631B2/ja
Priority claimed from JP2004163892A external-priority patent/JP5011631B2/ja
Priority to US11/006,578 priority patent/US20050263071A1/en
Publication of JP2005347426A publication Critical patent/JP2005347426A/ja
Publication of JP2005347426A5 publication Critical patent/JP2005347426A5/ja
Application granted granted Critical
Publication of JP5011631B2 publication Critical patent/JP5011631B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2004163892A 2004-06-01 2004-06-01 半導体製造装置および半導体製造システム Expired - Lifetime JP5011631B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004163892A JP5011631B2 (ja) 2004-06-01 2004-06-01 半導体製造装置および半導体製造システム
US11/006,578 US20050263071A1 (en) 2004-06-01 2004-12-08 Apparatus and system for manufacturing a semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004163892A JP5011631B2 (ja) 2004-06-01 2004-06-01 半導体製造装置および半導体製造システム

Publications (3)

Publication Number Publication Date
JP2005347426A JP2005347426A (ja) 2005-12-15
JP2005347426A5 true JP2005347426A5 (enExample) 2007-07-12
JP5011631B2 JP5011631B2 (ja) 2012-08-29

Family

ID=35423809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004163892A Expired - Lifetime JP5011631B2 (ja) 2004-06-01 2004-06-01 半導体製造装置および半導体製造システム

Country Status (2)

Country Link
US (1) US20050263071A1 (enExample)
JP (1) JP5011631B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5044860B2 (ja) * 2007-03-14 2012-10-10 積水化学工業株式会社 窒化ガリウム等のｉｉｉ族窒化物の成膜方法
US20090258162A1 (en) * 2008-04-12 2009-10-15 Applied Materials, Inc. Plasma processing apparatus and method
KR101910678B1 (ko) * 2010-11-17 2018-10-22 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
US20230390811A1 (en) * 2022-06-06 2023-12-07 Applied Materials, Inc. Throttle valve and foreline cleaning using a microwave source

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3378508D1 (en) * 1982-09-10 1988-12-22 Nippon Telegraph & Telephone Plasma deposition method and apparatus
JP2598336B2 (ja) * 1990-09-21 1997-04-09 株式会社日立製作所 プラズマ処理装置
JPH07161647A (ja) * 1993-12-07 1995-06-23 Sony Corp 表面処理装置
JP3151596B2 (ja) * 1995-07-20 2001-04-03 東京エレクトロン株式会社 プラズマ処理方法およびその装置
US6152070A (en) * 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
US6194038B1 (en) * 1998-03-20 2001-02-27 Applied Materials, Inc. Method for deposition of a conformal layer on a substrate
JP2976965B2 (ja) * 1998-04-02 1999-11-10 日新電機株式会社 成膜方法及び成膜装置
JP2000188257A (ja) * 1998-12-22 2000-07-04 Sharp Corp 結晶性シリコン系半導体薄膜の製造方法
JP3757698B2 (ja) * 1999-09-07 2006-03-22 富士ゼロックス株式会社 半導体製造装置および半導体製造システム
JP2001177099A (ja) * 1999-12-14 2001-06-29 Furontekku:Kk 薄膜トランジスタの製造方法およびアクティブマトリクス基板ならびに薄膜成膜装置
US7115516B2 (en) * 2001-10-09 2006-10-03 Applied Materials, Inc. Method of depositing a material layer

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