JP5009500B2 - Ｒｆパワーデバイス及びｒｆパワートランジスタデバイスにおける直線性を改善する方法 - Google Patents

Ｒｆパワーデバイス及びｒｆパワートランジスタデバイスにおける直線性を改善する方法 Download PDF

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Publication number
JP5009500B2
JP5009500B2 JP2004541592A JP2004541592A JP5009500B2 JP 5009500 B2 JP5009500 B2 JP 5009500B2 JP 2004541592 A JP2004541592 A JP 2004541592A JP 2004541592 A JP2004541592 A JP 2004541592A JP 5009500 B2 JP5009500 B2 JP 5009500B2
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Japan
Prior art keywords
transistor
coupled
package
matching circuit
lead
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Expired - Lifetime
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JP2004541592A
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Japanese (ja)
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JP2006501678A5 (enExample
JP2006501678A (ja
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クレッシェンジ・ジュニア・エミル・ジェームズ
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H01L2223/665—Bias feed arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
JP2004541592A 2002-09-30 2003-09-17 Ｒｆパワーデバイス及びｒｆパワートランジスタデバイスにおける直線性を改善する方法 Expired - Lifetime JP5009500B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/262,217 US6822321B2 (en) 2002-09-30 2002-09-30 Packaged RF power transistor having RF bypassing/output matching network
US10/262,217 2002-09-30
PCT/US2003/029719 WO2004032188A2 (en) 2002-09-30 2003-09-17 Packaged rf power transistor having rf bypassing/output matching network

Publications (3)

Publication Number Publication Date
JP2006501678A JP2006501678A (ja) 2006-01-12
JP2006501678A5 JP2006501678A5 (enExample) 2006-11-02
JP5009500B2 true JP5009500B2 (ja) 2012-08-22

Family

ID=32030167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004541592A Expired - Lifetime JP5009500B2 (ja) 2002-09-30 2003-09-17 Ｒｆパワーデバイス及びｒｆパワートランジスタデバイスにおける直線性を改善する方法

Country Status (7)

Country Link
US (1) US6822321B2 (enExample)
EP (1) EP1547394B1 (enExample)
JP (1) JP5009500B2 (enExample)
CN (1) CN1701613B (enExample)
AU (1) AU2003275086A1 (enExample)
TW (1) TWI318455B (enExample)
WO (1) WO2004032188A2 (enExample)

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US7109589B2 (en) * 2004-08-26 2006-09-19 Agere Systems Inc. Integrated circuit with substantially perpendicular wire bonds
US7268627B2 (en) * 2004-11-03 2007-09-11 Theta Microelectronics, Inc. Pre-matching of distributed and push-pull power transistors
US20060138650A1 (en) * 2004-12-28 2006-06-29 Freescale Semiconductor, Inc. Integrated circuit packaging device and method for matching impedance
US7193473B2 (en) * 2005-03-24 2007-03-20 Cree, Inc. High power Doherty amplifier using multi-stage modules
US7372334B2 (en) * 2005-07-26 2008-05-13 Infineon Technologies Ag Output match transistor
US7564303B2 (en) * 2005-07-26 2009-07-21 Infineon Technologies Ag Semiconductor power device and RF signal amplifier
US7378920B2 (en) * 2006-02-14 2008-05-27 Freescale Semiconductor, Inc. Methods and apparatus for a high-frequency output match circuit
WO2007122586A2 (en) * 2006-04-26 2007-11-01 Nxp B.V. A high power integrated rf amplifier
US20080231373A1 (en) * 2007-03-20 2008-09-25 Hafizur Rahman Output Circuit
US8330265B2 (en) * 2007-06-22 2012-12-11 Cree, Inc. RF transistor packages with internal stability network and methods of forming RF transistor packages with internal stability networks
US8592966B2 (en) * 2007-06-22 2013-11-26 Cree, Inc. RF transistor packages with internal stability network including intra-capacitor resistors and methods of forming RF transistor packages with internal stability networks including intra-capacitor resistors
US8076994B2 (en) * 2007-06-22 2011-12-13 Cree, Inc. RF power transistor packages with internal harmonic frequency reduction and methods of forming RF power transistor packages with internal harmonic frequency reduction
JP5030228B2 (ja) * 2007-11-30 2012-09-19 矢崎総業株式会社 電気接続箱
WO2009130544A1 (en) * 2008-04-22 2009-10-29 Freescale Semiconductor, Inc. Wireless communication unit and semiconductor device having a power amplifier therefor
US7948312B2 (en) * 2009-05-13 2011-05-24 Qualcomm, Incorporated Multi-bit class-D power amplifier system
US8536950B2 (en) * 2009-08-03 2013-09-17 Qualcomm Incorporated Multi-stage impedance matching
US8102205B2 (en) 2009-08-04 2012-01-24 Qualcomm, Incorporated Amplifier module with multiple operating modes
US8659359B2 (en) 2010-04-22 2014-02-25 Freescale Semiconductor, Inc. RF power transistor circuit
EP2388815A1 (en) * 2010-05-10 2011-11-23 Nxp B.V. A transistor package
USD680119S1 (en) * 2011-11-15 2013-04-16 Connectblue Ab Module
USD668659S1 (en) * 2011-11-15 2012-10-09 Connectblue Ab Module
USD689053S1 (en) * 2011-11-15 2013-09-03 Connectblue Ab Module
USD668658S1 (en) * 2011-11-15 2012-10-09 Connectblue Ab Module
USD692896S1 (en) * 2011-11-15 2013-11-05 Connectblue Ab Module
USD680545S1 (en) * 2011-11-15 2013-04-23 Connectblue Ab Module
US9281283B2 (en) 2012-09-12 2016-03-08 Freescale Semiconductor, Inc. Semiconductor devices with impedance matching-circuits
EP2802075B1 (en) 2013-05-07 2017-02-15 Ampleon Netherlands B.V. Dual-band semiconductor RF amplifier device
EP2830089B1 (en) * 2013-07-25 2017-07-12 Ampleon Netherlands B.V. RF power device
EP3066683B1 (en) 2013-11-07 2019-04-24 NXP USA, Inc. Bond wire arrangement with adjustable losses
JP6478253B2 (ja) * 2014-03-21 2019-03-06 華為技術有限公司Ｈｕａｗｅｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．，Ｌｔｄ． 電力増幅回路およびトランスミッタ
US9515011B2 (en) 2014-05-28 2016-12-06 Cree, Inc. Over-mold plastic packaged wide band-gap power transistors and MMICS
US9472480B2 (en) 2014-05-28 2016-10-18 Cree, Inc. Over-mold packaging for wide band-gap semiconductor devices
US9641163B2 (en) 2014-05-28 2017-05-02 Cree, Inc. Bandwidth limiting methods for GaN power transistors
US9438184B2 (en) 2014-06-27 2016-09-06 Freescale Semiconductor, Inc. Integrated passive device assemblies for RF amplifiers, and methods of manufacture thereof
CN105322895B (zh) * 2015-05-06 2018-11-09 苏州能讯高能半导体有限公司 一种偏置自适应内匹配功放管及基于该功放管的功放模块
US10432152B2 (en) 2015-05-22 2019-10-01 Nxp Usa, Inc. RF amplifier output circuit device with integrated current path, and methods of manufacture thereof
US9571044B1 (en) 2015-10-21 2017-02-14 Nxp Usa, Inc. RF power transistors with impedance matching circuits, and methods of manufacture thereof
US9692363B2 (en) * 2015-10-21 2017-06-27 Nxp Usa, Inc. RF power transistors with video bandwidth circuits, and methods of manufacture thereof
CN106206524B (zh) * 2016-07-07 2019-01-22 昆山华太电子技术有限公司 一种封装管壳体
US10270402B1 (en) * 2017-11-30 2019-04-23 Nxp Usa, Inc. Broadband input matching and video bandwidth circuits for power amplifiers
US10673386B2 (en) * 2017-12-05 2020-06-02 Nxp Usa, Inc. Wideband power amplifiers with harmonic traps
US10566938B1 (en) * 2018-12-11 2020-02-18 Nxp Usa, Inc. System and method for providing isolation of bias signal from RF signal in integrated circuit
CN111510085B (zh) * 2020-05-12 2023-06-23 苏州远创达科技有限公司 一种功率放大器的输出电路
US12183669B2 (en) 2021-12-17 2024-12-31 Macom Technology Solutions Holdings, Inc. Configurable metal—insulator—metal capacitor and devices
US12230614B2 (en) 2021-12-17 2025-02-18 Macom Technology Solutions Holdings, Inc. Multi-typed integrated passive device (IPD) components and devices and processes implementing the same
US12417966B2 (en) * 2021-12-17 2025-09-16 Macom Technology Solutions Holdings, Inc. IPD components having SiC substrates and devices and processes implementing the same
CN120934465A (zh) * 2025-10-16 2025-11-11 成都屿西半导体科技有限公司 一种扩展调制带宽的射频微波放大器

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Also Published As

Publication number Publication date
EP1547394A4 (en) 2006-09-20
WO2004032188A3 (en) 2004-06-17
US20040061214A1 (en) 2004-04-01
AU2003275086A1 (en) 2004-04-23
EP1547394A2 (en) 2005-06-29
AU2003275086A8 (en) 2004-04-23
US6822321B2 (en) 2004-11-23
TW200408128A (en) 2004-05-16
CN1701613A (zh) 2005-11-23
CN1701613B (zh) 2010-10-13
JP2006501678A (ja) 2006-01-12
EP1547394B1 (en) 2016-07-27
WO2004032188A2 (en) 2004-04-15
TWI318455B (en) 2009-12-11

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