JP4980701B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4980701B2 JP4980701B2 JP2006326123A JP2006326123A JP4980701B2 JP 4980701 B2 JP4980701 B2 JP 4980701B2 JP 2006326123 A JP2006326123 A JP 2006326123A JP 2006326123 A JP2006326123 A JP 2006326123A JP 4980701 B2 JP4980701 B2 JP 4980701B2
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- gan layer
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- aln
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
ガス流量:TMA(トリメチルアルミニウム)が70μモル/分、NH3(アンモニア)が5580μモル/分、H2(水素)が20SLM。
圧力:50Torr
成長温度:1044℃(成長1)、1142℃(成長2)
成長時間:300秒(成長1)、1500秒(成長2)
ガス流量:TMG(トリメチルガリウム)が243μモル/分、NH3(アンモニア)が2.2×105μモル/分、SiH4(シラン)が0.04μモル/分、H2(水素)が20SLM。
圧力:200Torr
成長温度:1040℃
成長時間:150秒
この成長条件では、平坦な膜を成長した場合に換算し77nmの厚さに相当する。
ガス流量:TMG(トリメチルガリウム)が243μモル/分、NH3(アンモニア)が2.2×105μモル/分、H2(水素)が20SLM。
圧力:200Torr
成長温度:1040℃
成長時間:2590秒
12 AlN層
14 SiドープGaN層
16 アンドープGaN層
18 N型GaN層
20 N型InGaN層
22 N型GaN層
24 活性層
26 P型GaN層
28 P型電極
30 N型電極
Claims (2)
- 基板上にAlN層を形成する工程と、
該AlN層上にSiドープGaN層を形成する工程と、
該SiドープGaN層上にアンドープGaN層を形成する工程と、を有し、
前記SiドープGaN層を形成する際の表面の光の反射率は、前記AlN層を形成する際の表面の光の反射率より小さいことを特徴とする半導体基板の製造方法。 - 基板上にAlN層を形成する工程と、
該AlN層上にSiドープGaN層を形成する工程と、
該SiドープGaN層上にアンドープGaN層を形成する工程と、
該アンドープGaN層上に動作層を形成する工程と、を有し、
前記SiドープGaN層を形成する際の表面の光の反射率は、前記AlN層を形成する際の表面の光の反射率より小さいことを特徴とする半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006326123A JP4980701B2 (ja) | 2006-12-01 | 2006-12-01 | 半導体装置の製造方法 |
TW096145623A TW200832515A (en) | 2006-12-01 | 2007-11-30 | Semiconductor device and method for fabricating the same |
US11/948,330 US20080128707A1 (en) | 2006-12-01 | 2007-11-30 | Semiconductor device and method for fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006326123A JP4980701B2 (ja) | 2006-12-01 | 2006-12-01 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008141005A JP2008141005A (ja) | 2008-06-19 |
JP4980701B2 true JP4980701B2 (ja) | 2012-07-18 |
Family
ID=39474672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006326123A Expired - Fee Related JP4980701B2 (ja) | 2006-12-01 | 2006-12-01 | 半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20080128707A1 (ja) |
JP (1) | JP4980701B2 (ja) |
TW (1) | TW200832515A (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5287406B2 (ja) * | 2009-03-24 | 2013-09-11 | 豊田合成株式会社 | Iii族窒化物半導体の製造方法 |
JP5434872B2 (ja) * | 2010-09-30 | 2014-03-05 | 豊田合成株式会社 | Iii族窒化物半導体発光素子の製造方法 |
JP5175967B1 (ja) * | 2011-10-11 | 2013-04-03 | 株式会社東芝 | 半導体発光素子及び半導体ウェーハ |
JP5705179B2 (ja) * | 2012-08-15 | 2015-04-22 | 株式会社東芝 | 窒化物半導体ウェーハ、窒化物半導体装置及び窒化物半導体結晶の成長方法 |
CN104541381B (zh) * | 2012-10-22 | 2017-12-01 | 夏普株式会社 | 氮化物半导体发光元件 |
JP6224424B2 (ja) * | 2013-11-15 | 2017-11-01 | 古河機械金属株式会社 | Iii族窒化物半導体自立基板の製造方法 |
JP7157324B2 (ja) * | 2018-09-29 | 2022-10-20 | 日亜化学工業株式会社 | ファイバー及びこれを用いた発光素子並びにその製造方法 |
JP7457932B2 (ja) * | 2019-06-17 | 2024-03-29 | パナソニックIpマネジメント株式会社 | 窒化物半導体結晶の製造方法および窒化物半導体結晶基板 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5679152A (en) * | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
EP0732754B1 (en) * | 1995-03-17 | 2007-10-31 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitride compound |
JPH0961865A (ja) * | 1995-08-28 | 1997-03-07 | Sumitomo Chem Co Ltd | 非線形光学効果素子と電気光学効果素子 |
EP0762516B1 (en) * | 1995-08-28 | 1999-04-21 | Mitsubishi Cable Industries, Ltd. | Group-III nitride based light emitter |
EP2234142A1 (en) * | 1997-04-11 | 2010-09-29 | Nichia Corporation | Nitride semiconductor substrate |
US6608330B1 (en) * | 1998-09-21 | 2003-08-19 | Nichia Corporation | Light emitting device |
JP4063520B2 (ja) * | 2000-11-30 | 2008-03-19 | 日本碍子株式会社 | 半導体発光素子 |
MY129352A (en) * | 2001-03-28 | 2007-03-30 | Nichia Corp | Nitride semiconductor device |
JP3768943B2 (ja) * | 2001-09-28 | 2006-04-19 | 日本碍子株式会社 | Iii族窒化物エピタキシャル基板、iii族窒化物素子用エピタキシャル基板及びiii族窒化物素子 |
JP2004047764A (ja) * | 2002-07-12 | 2004-02-12 | Hitachi Cable Ltd | 窒化物半導体の製造方法および半導体ウェハならびに半導体デバイス |
EP1697983B1 (en) * | 2003-12-09 | 2012-06-13 | The Regents of The University of California | Highly efficient gallium nitride based light emitting diodes having surface roughening |
JP5025168B2 (ja) * | 2006-06-08 | 2012-09-12 | 昭和電工株式会社 | Iii族窒化物半導体積層構造体の製造方法 |
-
2006
- 2006-12-01 JP JP2006326123A patent/JP4980701B2/ja not_active Expired - Fee Related
-
2007
- 2007-11-30 TW TW096145623A patent/TW200832515A/zh unknown
- 2007-11-30 US US11/948,330 patent/US20080128707A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TW200832515A (en) | 2008-08-01 |
JP2008141005A (ja) | 2008-06-19 |
US20080128707A1 (en) | 2008-06-05 |
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