JP4971274B2 - Ｉｉｉ族窒化物結晶の製造方法 - Google Patents

Ｉｉｉ族窒化物結晶の製造方法 Download PDF

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JP4971274B2
JP4971274B2 JP2008234150A JP2008234150A JP4971274B2 JP 4971274 B2 JP4971274 B2 JP 4971274B2 JP 2008234150 A JP2008234150 A JP 2008234150A JP 2008234150 A JP2008234150 A JP 2008234150A JP 4971274 B2 JP4971274 B2 JP 4971274B2
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crystal
group iii
iii nitride
gan
region
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JP2009007250A (ja
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正二 皿山
浩和 岩田
久典 山根
昌彦 島田
真登 青木
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Ricoh Co Ltd
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Ricoh Co Ltd
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JP2008234150A 2002-01-29 2008-09-12 Ｉｉｉ族窒化物結晶の製造方法 Expired - Lifetime JP4971274B2 (ja)

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JP2008234150A JP4971274B2 (ja) 2002-01-29 2008-09-12 Ｉｉｉ族窒化物結晶の製造方法

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JP2002019986 2002-01-29
JP2002019986 2002-01-29
JP2008234150A JP4971274B2 (ja) 2002-01-29 2008-09-12 Ｉｉｉ族窒化物結晶の製造方法

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JP2003018507A Division JP4801315B2 (ja) 2002-01-29 2003-01-28 Ｉｉｉ族窒化物結晶の製造方法

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JP2012010448A Division JP2012102015A (ja) 2002-01-29 2012-01-20 ＧａＮ結晶

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JP2009007250A JP2009007250A (ja) 2009-01-15
JP4971274B2 true JP4971274B2 (ja) 2012-07-11

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JP2012010448A Pending JP2012102015A (ja) 2002-01-29 2012-01-20 ＧａＮ結晶

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JP5953683B2 (ja) * 2011-09-14 2016-07-20 株式会社リコー １３族窒化物結晶、及び１３族窒化物結晶基板

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JP4075385B2 (ja) * 2002-01-24 2008-04-16 日亜化学工業株式会社 窒化ガリウム単結晶の種結晶およびその成長方法

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JP2012102015A (ja) 2012-05-31

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