JP4964271B2 - ＧａＮ系結晶膜の製造方法 - Google Patents

ＧａＮ系結晶膜の製造方法 Download PDF

Info

Publication number
JP4964271B2
JP4964271B2 JP2009101474A JP2009101474A JP4964271B2 JP 4964271 B2 JP4964271 B2 JP 4964271B2 JP 2009101474 A JP2009101474 A JP 2009101474A JP 2009101474 A JP2009101474 A JP 2009101474A JP 4964271 B2 JP4964271 B2 JP 4964271B2
Authority
JP
Japan
Prior art keywords
gan
crystal
substrate
growth
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009101474A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009200513A5 (enExample
JP2009200513A (ja
Inventor
茂稔 伊藤
晋 近江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2009101474A priority Critical patent/JP4964271B2/ja
Publication of JP2009200513A publication Critical patent/JP2009200513A/ja
Publication of JP2009200513A5 publication Critical patent/JP2009200513A5/ja
Application granted granted Critical
Publication of JP4964271B2 publication Critical patent/JP4964271B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
JP2009101474A 2009-04-17 2009-04-17 ＧａＮ系結晶膜の製造方法 Expired - Fee Related JP4964271B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009101474A JP4964271B2 (ja) 2009-04-17 2009-04-17 ＧａＮ系結晶膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009101474A JP4964271B2 (ja) 2009-04-17 2009-04-17 ＧａＮ系結晶膜の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13577698A Division JP4390090B2 (ja) 1998-05-18 1998-05-18 ＧａＮ系結晶膜の製造方法

Publications (3)

Publication Number Publication Date
JP2009200513A JP2009200513A (ja) 2009-09-03
JP2009200513A5 JP2009200513A5 (enExample) 2009-11-05
JP4964271B2 true JP4964271B2 (ja) 2012-06-27

Family

ID=41143612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009101474A Expired - Fee Related JP4964271B2 (ja) 2009-04-17 2009-04-17 ＧａＮ系結晶膜の製造方法

Country Status (1)

Country Link
JP (1) JP4964271B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113539786B (zh) * 2020-04-17 2024-05-28 中国科学院苏州纳米技术与纳米仿生研究所 硅基氮化镓外延结构及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088217B2 (ja) * 1991-01-31 1996-01-29 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法
JP3352712B2 (ja) * 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
JPH10265297A (ja) * 1997-03-26 1998-10-06 Shiro Sakai ＧａＮバルク単結晶の製造方法

Also Published As

Publication number Publication date
JP2009200513A (ja) 2009-09-03

Similar Documents

Publication Publication Date Title
JP4390090B2 (ja) ＧａＮ系結晶膜の製造方法
JP3631724B2 (ja) Ｉｉｉ族窒化物半導体基板およびその製造方法
JP5276852B2 (ja) Ｉｉｉ族窒化物半導体エピタキシャル基板の製造方法
JP4581490B2 (ja) Ｉｉｉ−ｖ族窒化物系半導体自立基板の製造方法、及びｉｉｉ−ｖ族窒化物系半導体の製造方法
US7670933B1 (en) Nanowire-templated lateral epitaxial growth of non-polar group III nitrides
EP2684988A1 (en) Base, substrate with gallium nitride crystal layer, and process for producing same
JP4991828B2 (ja) 窒化ガリウム系化合物半導体の作製方法
JP2006253628A (ja) 化合物半導体装置及びその製造方法
CN103429800B (zh) 氮化镓层的制造方法及该方法中使用的晶种基板
JP2004319711A (ja) エピタキシャル成長用多孔質基板およびその製造方法ならびにｉｉｉ族窒化物半導体基板の製造方法
JP2006273618A (ja) ＡｌＧａＮ基板およびその製造方法
JP2010521810A (ja) 半導体ヘテロ構造及びその製造
JPH11233391A (ja) 結晶基板とそれを用いた半導体装置およびその製法
JP4952616B2 (ja) 窒化物半導体基板の製造方法
JPH10265297A (ja) ＧａＮバルク単結晶の製造方法
JP7350477B2 (ja) 半導体成長用基板、半導体素子、半導体発光素子および半導体成長用基板の製造方法
JP2005179173A (ja) アルミニウムを含有した窒化物半導体結晶の成長方法
JP2017226584A (ja) 自立基板の製造方法
JP3946976B2 (ja) 半導体素子、エピタキシャル基板、半導体素子の製造方法、及びエピタキシャル基板の製造方法
JP2009200513A (ja) 結晶基板およびＧａＮ系結晶膜の製造方法
KR100941596B1 (ko) 3-5족 화합물 반도체의 제조방법 및 반도체 소자
US20090309189A1 (en) Method for the growth of indium nitride
JP5488562B2 (ja) 窒化物半導体基板の製造方法
JP5015480B2 (ja) 半導体単結晶基板の製造方法
JPH09227297A (ja) ＩｎＧａＮ単結晶およびその製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090914

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120307

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120327

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120327

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150406

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees