JP2009200513A5 - - Google Patents
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- Publication number
- JP2009200513A5 JP2009200513A5 JP2009101474A JP2009101474A JP2009200513A5 JP 2009200513 A5 JP2009200513 A5 JP 2009200513A5 JP 2009101474 A JP2009101474 A JP 2009101474A JP 2009101474 A JP2009101474 A JP 2009101474A JP 2009200513 A5 JP2009200513 A5 JP 2009200513A5
- Authority
- JP
- Japan
- Prior art keywords
- gan
- crystal
- substrate
- island
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009101474A JP4964271B2 (ja) | 2009-04-17 | 2009-04-17 | ＧａＮ系結晶膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009101474A JP4964271B2 (ja) | 2009-04-17 | 2009-04-17 | ＧａＮ系結晶膜の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13577698A Division JP4390090B2 (ja) | 1998-05-18 | 1998-05-18 | ＧａＮ系結晶膜の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009200513A JP2009200513A (ja) | 2009-09-03 |
| JP2009200513A5 true JP2009200513A5 (enExample) | 2009-11-05 |
| JP4964271B2 JP4964271B2 (ja) | 2012-06-27 |
Family
ID=41143612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009101474A Expired - Fee Related JP4964271B2 (ja) | 2009-04-17 | 2009-04-17 | ＧａＮ系結晶膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4964271B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113539786B (zh) * | 2020-04-17 | 2024-05-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | 硅基氮化镓外延结构及其制备方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH088217B2 (ja) * | 1991-01-31 | 1996-01-29 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体の結晶成長方法 |
| JP3352712B2 (ja) * | 1991-12-18 | 2002-12-03 | 浩 天野 | 窒化ガリウム系半導体素子及びその製造方法 |
| JPH10265297A (ja) * | 1997-03-26 | 1998-10-06 | Shiro Sakai | ＧａＮバルク単結晶の製造方法 |
-
2009
- 2009-04-17 JP JP2009101474A patent/JP4964271B2/ja not_active Expired - Fee Related
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