JP4961179B2 - 基板処理装置及び半導体装置の製造方法 - Google Patents
基板処理装置及び半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4961179B2 JP4961179B2 JP2006216028A JP2006216028A JP4961179B2 JP 4961179 B2 JP4961179 B2 JP 4961179B2 JP 2006216028 A JP2006216028 A JP 2006216028A JP 2006216028 A JP2006216028 A JP 2006216028A JP 4961179 B2 JP4961179 B2 JP 4961179B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- wafer
- susceptor
- processing
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006216028A JP4961179B2 (ja) | 2006-08-08 | 2006-08-08 | 基板処理装置及び半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006216028A JP4961179B2 (ja) | 2006-08-08 | 2006-08-08 | 基板処理装置及び半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008042023A JP2008042023A (ja) | 2008-02-21 |
| JP2008042023A5 JP2008042023A5 (enExample) | 2009-09-10 |
| JP4961179B2 true JP4961179B2 (ja) | 2012-06-27 |
Family
ID=39176685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006216028A Active JP4961179B2 (ja) | 2006-08-08 | 2006-08-08 | 基板処理装置及び半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4961179B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010084230A (ja) * | 2008-09-04 | 2010-04-15 | Tokyo Electron Ltd | 成膜装置、基板処理装置及び回転テーブル |
| JP5264403B2 (ja) * | 2008-10-14 | 2013-08-14 | 株式会社アルバック | プラズマエッチング装置において用いる基板トレイ、エッチング装置及びエッチング方法 |
| JP5869899B2 (ja) * | 2011-04-01 | 2016-02-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、基板処理方法及びサセプタカバー |
| JP6066571B2 (ja) * | 2012-02-17 | 2017-01-25 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
| JP2018095916A (ja) * | 2016-12-13 | 2018-06-21 | 株式会社日立国際電気 | 基板処理装置、リソグラフィ用テンプレートの製造方法、プログラム |
| JP2020021922A (ja) * | 2018-07-24 | 2020-02-06 | 住友電気工業株式会社 | 基板加熱ユニットおよび表面板 |
| JP7450512B2 (ja) * | 2020-10-07 | 2024-03-15 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| CN117364065A (zh) * | 2022-07-01 | 2024-01-09 | 苏州珂玛材料科技股份有限公司 | 一种更换陶瓷加热器顶部结构使之具有静电吸附能力的方法 |
| CN117364064A (zh) * | 2022-07-01 | 2024-01-09 | 苏州珂玛材料科技股份有限公司 | 一种适用于不同尺寸晶圆的加热器的制备方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3064409B2 (ja) * | 1990-11-30 | 2000-07-12 | 株式会社日立製作所 | 保持装置およびそれを用いた半導体製造装置 |
| JPH06349810A (ja) * | 1993-06-02 | 1994-12-22 | Hitachi Electron Eng Co Ltd | 気相反応装置 |
| JP3312163B2 (ja) * | 1994-11-18 | 2002-08-05 | 日本電信電話株式会社 | 真空吸着装置 |
| JP2002134487A (ja) * | 2000-10-25 | 2002-05-10 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2003142566A (ja) * | 2001-11-07 | 2003-05-16 | New Creation Co Ltd | 真空吸着器及びその製造方法 |
| JP2005064284A (ja) * | 2003-08-14 | 2005-03-10 | Asm Japan Kk | 半導体基板保持装置 |
| JP4444843B2 (ja) * | 2005-01-31 | 2010-03-31 | 住友大阪セメント株式会社 | 静電チャック |
| JP2007067394A (ja) * | 2005-08-05 | 2007-03-15 | Tokyo Electron Ltd | 基板処理装置およびそれに用いる基板載置台 |
-
2006
- 2006-08-08 JP JP2006216028A patent/JP4961179B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008042023A (ja) | 2008-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112992639B (zh) | 具有静电卡盘的基板处理装置及基板处理方法 | |
| TWI861122B (zh) | 載置台及電漿處理裝置 | |
| CN102067737B (zh) | 具有不同高度的内外电极的阴极 | |
| KR102487342B1 (ko) | 정전척 어셈블리 및 이를 구비하는 플라즈마 처리장치 | |
| KR102092623B1 (ko) | 플라스마 처리 장치 | |
| JP7382329B2 (ja) | 基板支持体のためのプロセスキット | |
| TWI717631B (zh) | 電漿處理裝置 | |
| JP7110020B2 (ja) | 基板支持装置およびプラズマ処理装置 | |
| KR102353796B1 (ko) | 정전척, 배치대, 플라즈마 처리 장치, 및 정전척의 제조방법 | |
| US20060005930A1 (en) | Substrate supporting structure for semiconductor processing, and plasma processing device | |
| CN116457931A (zh) | 高温双极静电卡盘 | |
| KR20130111221A (ko) | 프로세스 공간이 한정된 pecvd 챔버 | |
| TW202117912A (zh) | 基板支持器及電漿處理裝置 | |
| TWI880938B (zh) | 包含擋門之組件及基板處理裝置 | |
| JP4961179B2 (ja) | 基板処理装置及び半導体装置の製造方法 | |
| JP4777790B2 (ja) | プラズマ処理室用構造物、プラズマ処理室、及びプラズマ処理装置 | |
| TW201543532A (zh) | 用於基板之電漿處理之方法及裝置 | |
| JP5171584B2 (ja) | 基板処理装置の基板載置台、基板処理装置及び半導体デバイスの製造方法 | |
| JP2009152233A (ja) | 半導体製造装置 | |
| JP2008053489A (ja) | 基板処理装置 | |
| JP2005093886A (ja) | 半導体製造装置 | |
| KR20230092672A (ko) | 포커스 링 및 이를 포함하는 기판 처리 장치 | |
| KR20080030713A (ko) | 기판 가공 장치 | |
| TW202447828A (zh) | 電漿處理裝置、基板支持器及環構造 | |
| JP2008270468A (ja) | 基板処理装置及び半導体装置の製造方法。 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090728 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090728 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100820 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110531 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110725 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111220 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20120213 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120216 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120313 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120326 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150330 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4961179 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |