JP4954540B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4954540B2
JP4954540B2 JP2005352183A JP2005352183A JP4954540B2 JP 4954540 B2 JP4954540 B2 JP 4954540B2 JP 2005352183 A JP2005352183 A JP 2005352183A JP 2005352183 A JP2005352183 A JP 2005352183A JP 4954540 B2 JP4954540 B2 JP 4954540B2
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JP
Japan
Prior art keywords
layer
conductive layer
organic compound
transistor
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005352183A
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English (en)
Japanese (ja)
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JP2006191001A5 (enExample
JP2006191001A (ja
Inventor
芳隆 守屋
寛子 安部
幹央 湯川
亮二 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005352183A priority Critical patent/JP4954540B2/ja
Publication of JP2006191001A publication Critical patent/JP2006191001A/ja
Publication of JP2006191001A5 publication Critical patent/JP2006191001A5/ja
Application granted granted Critical
Publication of JP4954540B2 publication Critical patent/JP4954540B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2005352183A 2004-12-07 2005-12-06 半導体装置 Expired - Fee Related JP4954540B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005352183A JP4954540B2 (ja) 2004-12-07 2005-12-06 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004354490 2004-12-07
JP2004354490 2004-12-07
JP2005352183A JP4954540B2 (ja) 2004-12-07 2005-12-06 半導体装置

Publications (3)

Publication Number Publication Date
JP2006191001A JP2006191001A (ja) 2006-07-20
JP2006191001A5 JP2006191001A5 (enExample) 2009-01-15
JP4954540B2 true JP4954540B2 (ja) 2012-06-20

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ID=36797851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005352183A Expired - Fee Related JP4954540B2 (ja) 2004-12-07 2005-12-06 半導体装置

Country Status (1)

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JP (1) JP4954540B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5315684B2 (ja) * 2007-12-18 2013-10-16 セイコーエプソン株式会社 電気泳動表示装置
US9016585B2 (en) 2008-11-25 2015-04-28 Thin Film Electronics Asa Printed antennas, methods of printing an antenna, and devices including the printed antenna
JP5396324B2 (ja) * 2010-03-30 2014-01-22 トッパン・フォームズ株式会社 Ｉｃチップおよびこれを備えた非接触型データ受送信体
JP7429913B2 (ja) * 2019-06-07 2024-02-09 Ｔｏｐｐａｎホールディングス株式会社 シート加工方法、および、シート加工装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3213757B2 (ja) * 1990-04-03 2001-10-02 キヤノン株式会社 情報転送方法、情報転送装置及び画像読出装置
JPH0628841A (ja) * 1992-07-08 1994-02-04 Makoto Yano 化学反応を利用した記憶素子
JP4112184B2 (ja) * 2000-01-31 2008-07-02 株式会社半導体エネルギー研究所 エリアセンサ及び表示装置
JP2001345431A (ja) * 2000-05-31 2001-12-14 Japan Science & Technology Corp 有機強誘電体薄膜及び半導体デバイス
EP1344223A4 (en) * 2000-10-31 2005-05-25 Univ California BISTABLE ORGANIC DEVICE AND ORGANIC MEMORY CELLS
JP2003288573A (ja) * 2002-03-27 2003-10-10 Seiko Epson Corp Ｉｃカード及びその製造方法
JP4566578B2 (ja) * 2003-02-24 2010-10-20 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法

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Publication number Publication date
JP2006191001A (ja) 2006-07-20

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